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51. 发明授权

US4316619A Passive seatbelt system 失效
标题翻译：被动安全带系统
公开(公告)号：US4316619A
公开(公告)日：1982-02-23
申请号：US154121
申请日：1980-05-28
申请人： Ichiro Suzuki , Masanao Motonami , Hisashi Ogawa
发明人： Ichiro Suzuki , Masanao Motonami , Hisashi Ogawa
IPC分类号： B60R22/06 , B60R21/10
CPC分类号： B60R22/06
摘要： A passive seatbelt system wherein a webbing is connected to a webbing guide movably received in a guide rail laid in or on a vehicle and the webbing guide is moved by a thick wall tape to cause the webbing to approach or recede from the body of an occupant of the vehicle. A tape casing for receiving the tail end portion of the thick wall tape is provided at a position adjacent to driving means for driving the thick wall tape in a panel of the vehicle.
摘要翻译：一种被动安全带系统，其中织带连接到可移动地容纳在布置在车辆中或车辆上的导轨中的织带引导件上，并且带状引导件被厚壁带移动以使织带从乘员身体接近或离开的车辆。用于接收厚壁带的尾端部的带壳体设置在与用于驱动车辆面板中的厚壁带的驱动装置相邻的位置处。

52. 发明授权

US08350332B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08350332B2
公开(公告)日：2013-01-08
申请号：US12619222
申请日：2009-11-16
申请人： Tsutomu Oosuka , Yoshihiro Sato , Hisashi Ogawa
发明人： Tsutomu Oosuka , Yoshihiro Sato , Hisashi Ogawa
IPC分类号： H01L27/092
CPC分类号： H01L21/823842 , H01L21/82345 , H01L21/823462 , H01L21/823481 , H01L21/823857 , H01L21/823878
摘要： A first and second gate electrodes are formed on a first and second active regions, respectively. The first and second gate electrodes have a first and second metal-containing conductive films, respectively. The first and second metal-containing conductive films are formed on the isolation region for segmenting the first and second active regions to be spaced apart from each other. A third metal-containing conductive film, which is a part of each of the first and second gate electrodes, is continuously formed from a top of the first metal-containing conductive film through a top of the isolation region to a top of the second metal-containing conductive film. The third metal-containing conductive film is in contact with the first and second metal-containing conductive films.
摘要翻译：第一和第二栅电极分别形成在第一和第二有源区上。第一和第二栅电极分别具有第一和第二含金属的导电膜。第一和第二含金属导电膜形成在隔离区域上，用于将第一和第二有源区域彼此分隔开。作为第一和第二栅电极中的每一个的一部分的第三含金属导电膜从第一含金属导电膜的顶部通过隔离区的顶部连续地形成到第二金属的顶部的导电膜。第三含金属导电膜与第一和第二含金属导电膜接触。

53. 发明授权

US08344455B2 Semiconductor device and fabrication method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08344455B2
公开(公告)日：2013-01-01
申请号：US13149554
申请日：2011-05-31
申请人： Tsutomu Oosuka , Hisashi Ogawa , Yoshihiro Sato
发明人： Tsutomu Oosuka , Hisashi Ogawa , Yoshihiro Sato
IPC分类号： H01L29/78
CPC分类号： H01L23/535 , H01L21/28518 , H01L21/28525 , H01L21/76895 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L27/11 , H01L29/161 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.
摘要翻译：半导体器件包括：晶体管，其具有形成在半导体衬底上的栅极电极和形成在半导体衬底的位于栅电极两侧的部分中的第一和第二源极/漏极区域; 形成在相对于第一源极/漏极区域的与栅电极相对的位置处的栅极互连; 以及形成在所述第一源极/漏极区域上以在所述半导体衬底的顶表面上方突出的第一硅 - 锗层。栅极互连和第一源极/漏极区域经由包括第一硅 - 锗层的局部互连结构连接。

54. 发明授权

US08021938B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08021938B2
公开(公告)日：2011-09-20
申请号：US13028637
申请日：2011-02-16
申请人： Hisashi Ogawa
发明人： Hisashi Ogawa
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A semiconductor device includes: a first gate insulating film on a first region of a semiconductor substrate; a first gate electrode on the first gate insulating film; a second gate insulating film on a second region of the semiconductor substrate; and a second gate electrode on the second gate insulating film. The first gate insulating film includes a first insulating film composed of a first material containing a first metal, and the second gate insulating film includes a second insulating film composed of the first material and a second material containing a second metal.
摘要翻译：半导体器件包括：在半导体衬底的第一区域上的第一栅极绝缘膜; 第一栅绝缘膜上的第一栅电极; 在所述半导体衬底的第二区域上的第二栅极绝缘膜; 以及在第二栅极绝缘膜上的第二栅电极。第一栅极绝缘膜包括由包含第一金属的第一材料构成的第一绝缘膜，并且第二栅极绝缘膜包括由第一材料构成的第二绝缘膜和包含第二金属的第二材料。

55. 发明授权

US07915687B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US07915687B2
公开(公告)日：2011-03-29
申请号：US12327271
申请日：2008-12-03
申请人： Hisashi Ogawa
发明人： Hisashi Ogawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A semiconductor device includes: a first gate insulating film on a first region of a semiconductor substrate; a first gate electrode on the first gate insulating film; a second gate insulating film on a second region of the semiconductor substrate; and a second gate electrode on the second gate insulating film. The first gate insulating film includes a first insulating film composed of a first material containing a first metal, and the second gate insulating film includes a second insulating film composed of the first material and a second material containing a second metal.

56. 发明授权

US07754335B2 Vehicle window glass and process for manufacturing the same 失效
标题翻译：车窗玻璃及其制造方法
公开(公告)号：US07754335B2
公开(公告)日：2010-07-13
申请号：US11645922
申请日：2006-12-27
申请人： Takashi Muromachi , Hisashi Ogawa , Mamoru Yoshida , Nobuki Iwai
发明人： Takashi Muromachi , Hisashi Ogawa , Mamoru Yoshida , Nobuki Iwai
IPC分类号： B32B17/06
CPC分类号： C03C17/007 , B60J3/007 , C03C17/009 , C03C17/366 , C03C19/00 , C03C2217/213 , C03C2217/231 , C03C2217/29 , C03C2217/45 , C03C2217/476 , C03C2217/948 , C03C2218/111 , C03C2218/113 , C03C2218/31 , C03C2218/365 , Y10T428/24777 , Y10T428/2495
摘要： A vehicle window glass which is capable of preventing a film formed on a surface of a glass plate from peeling off to thereby improve the appearance quality of an edge portion of the glass plate. The vehicle window glass comprises a polished edge portion of a glass plate and a surface of the glass plate. A film is integrally formed on the surface of the glass plate and on at least one side of the polished edge portion of the glass plate, and a side of the edge portion on which the film is integrally formed is exposed outside when the vehicle window glass is mounted on a vehicle.
摘要翻译：一种车窗玻璃，其能够防止形成在玻璃板表面上的膜剥离，从而提高玻璃板的边缘部分的外观质量。车窗玻璃包括玻璃板的抛光边缘部分和玻璃板的表面。在玻璃板的表面和玻璃板的研磨边缘部分的至少一侧上一体地形成膜，并且当车辆窗玻璃在其上形成膜的边缘部分的一侧暴露在外部安装在车辆上。

57. 发明申请

US20090146215A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090146215A1
公开(公告)日：2009-06-11
申请号：US12327271
申请日：2008-12-03
申请人： Hisashi Ogawa
发明人： Hisashi Ogawa
IPC分类号： H01L27/092 , H01L21/28
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A semiconductor device includes: a first gate insulating film on a first region of a semiconductor substrate; a first gate electrode on the first gate insulating film; a second gate insulating film on a second region of the semiconductor substrate; and a second gate electrode on the second gate insulating film. The first gate insulating film includes a first insulating film composed of a first material containing a first metal, and the second gate insulating film includes a second insulating film composed of the first material and a second material containing a second metal.
摘要翻译：半导体器件包括：在半导体衬底的第一区域上的第一栅极绝缘膜; 第一栅绝缘膜上的第一栅电极; 在所述半导体衬底的第二区域上的第二栅极绝缘膜; 以及在第二栅极绝缘膜上的第二栅电极。第一栅极绝缘膜包括由包含第一金属的第一材料构成的第一绝缘膜，并且第二栅极绝缘膜包括由第一材料构成的第二绝缘膜和包含第二金属的第二材料。

58. 发明申请

US20090007490A1 Vehicle Window Pane and Manufacturing Method Therefor 失效
标题翻译：车窗玻璃及其制造方法
公开(公告)号：US20090007490A1
公开(公告)日：2009-01-08
申请号：US12087139
申请日：2006-12-21
申请人： Takashi Muromachi , Nobuki Iwai , Hisashi Ogawa , Mamoru Yoshida
发明人： Takashi Muromachi , Nobuki Iwai , Hisashi Ogawa , Mamoru Yoshida
IPC分类号： E06B7/28
CPC分类号： B60J3/007 , C03C17/002 , C03C17/007 , C03C17/009 , C03C17/366 , C03C2217/213 , C03C2217/231 , C03C2217/29 , C03C2217/475 , C03C2217/476 , C03C2217/948 , C03C2218/114 , Y10T428/24479 , Y10T428/24612 , Y10T428/24777
摘要： There is provided a vehicle window pane that can be manufactured at low cost and can reduce burning sensation of the skin of a passenger in the vehicle, and a manufacturing method therefor. With a glass plate 1 held by a glass plate holding member 4 in the vertical direction, a nozzle 2 is used to eject infrared cutoff liquid 3 onto the upper portion 1b of the glass plate 1. The infrared cutoff liquid 3 ejected onto the upper portion 1b of the glass plate 1 flows vertically downward, and is applied onto the glass plate 1. The glass plate 1 to which the infrared cutoff liquid 2 has been applied is dried for approximately five minutes at room temperature. Then, the glass plate 1 to which the infrared cutoff liquid 3 has been applied is placed in an oven preheated to 200° C., heated for ten minutes, and then cooled. The glass plate 1 having the infrared cutoff film thereon is thus formed. The resultant glass plate 1 having the infrared cutoff film thereon is installed in a vehicle 5 in such a way that the lower portion 1c of the glass plate 1 is located on the upper side of the vehicle 5 and the upper portion 1b of the glass plate 1 is located on the lower side of the vehicle 5.
摘要翻译：提供了可以以低成本制造并可以减少车辆中的乘客的皮肤的灼伤感的车辆窗玻璃及其制造方法。在由玻璃板保持部件4沿垂直方向保持的玻璃板1中，使用喷嘴2将红外线截止液3喷射到玻璃板1的上部1b上。将红外线截止液3喷射到上部 1b的玻璃板1垂直向下流动并被施加到玻璃板1上。已经施加了红外截止液2的玻璃板1在室温下干燥约5分钟。然后，将涂有红外阻挡液3的玻璃板1放入预热至200℃的加热炉中，加热10分钟，然后冷却。由此形成其上具有红外截止膜的玻璃板1。将其上具有红外截止膜的所得玻璃板1安装在车辆5中，使得玻璃板1的下部1c位于车辆5的上侧，玻璃板的上部1b 1位于车辆5的下侧。

59. 发明申请

US20080128825A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080128825A1
公开(公告)日：2008-06-05
申请号：US11979870
申请日：2007-11-09
申请人： Yoshihiro Sato , Hisashi Ogawa
发明人： Yoshihiro Sato , Hisashi Ogawa
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/82385 , H01L21/823864 , H01L21/823871 , H01L29/4975 , H01L29/66545 , H01L29/7833
摘要： A p-type MIS transistor includes a first gate insulating film formed on a first active region; and a first fully silicided gate pattern that is obtained by fully siliciding a silicon film, is formed to extend over the first active region with the first gate insulating film sandwiched therebetween, and includes a first fully silicided gate electrode provided on the first active region and a first fully silicided gate line provided on the isolation region. The first fully silicided gate pattern includes, along a gate width direction, a portion having a first thickness and including the first fully silicided gate electrode and portions each having a second thickness larger than the first thickness and respectively disposed on both sides of the portion having the first thickness.
摘要翻译： p型MIS晶体管包括形成在第一有源区上的第一栅极绝缘膜; 并且通过使硅膜完全硅化而获得的第一完全硅化的栅极图案被形成为在第一有源区域上延伸，并且第一栅极绝缘膜夹在其间，并且包括设置在第一有源区上的第一完全硅化栅电极和设置在隔离区上的第一完全硅化栅极线。第一完全硅化的栅极图案沿着栅极宽度方向包括具有第一厚度的部分，并且包括第一完全硅化的栅极电极和各自具有大于第一厚度的第二厚度的部分，并且分别设置在具有第一厚度的部分的两侧，第一厚度。

60. 发明申请

US20080067611A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080067611A1
公开(公告)日：2008-03-20
申请号：US11896997
申请日：2007-09-07
申请人： Chiaki Kudo , Hisashi Ogawa
发明人： Chiaki Kudo , Hisashi Ogawa
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42376 , H01L21/28123 , H01L21/823456 , H01L21/82385 , H01L27/0207 , H01L29/4238
摘要： A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region; and a first gate electrode formed on the isolation region and the active region and including a first region on the isolation region. The first region has a pattern width in a gate length direction larger than a pattern width of the first gate electrode on the active region. The first region includes a part having a film thickness different from a film thickness of the first gate electrode on the active region.
摘要翻译：半导体器件包括：形成在半导体衬底中的隔离区; 由隔离区包围的有源区; 以及形成在所述隔离区域和所述有源区域上并且包括所述隔离区域上的第一区域的第一栅电极。第一区域具有比有源区域上的第一栅电极的图案宽度大的栅极长度方向的图案宽度。第一区域包括具有与活性区域上的第一栅电极的膜厚度不同的膜厚度的部分。

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