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51. 发明申请

US20110289793A1 SUPERCRITICAL DRYING METHOD 审中-公开
标题翻译：超临界干燥方法
公开(公告)号：US20110289793A1
公开(公告)日：2011-12-01
申请号：US12976593
申请日：2010-12-22
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
IPC分类号： F26B3/02 , B08B3/10
CPC分类号： F26B3/04 , H01L21/67034
摘要： According to one embodiment, a semiconductor substrate having a surface wetted with a chemical solution is introduced into a chamber, and a supercritical fluid is supplied into the chamber. The temperature in the chamber is adjusted to the critical temperature of the chemical solution or higher, so that the chemical solution is put into a supercritical state. The pressure in the chamber is then lowered, and the chemical solution in the critical state is turned into gaseous matter. The gaseous matter is then discharged from the chamber.
摘要翻译：根据一个实施例，将具有用化学溶液润湿的表面的半导体衬底引入室中，并将超临界流体供应到室中。将室内的温度调节至化学溶液的临界温度以上，使化学溶液处于超临界状态。然后降低室中的压力，将临界状态下的化学溶液变成气态物质。然后将气体从室排出。

52. 发明授权

US06492271B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06492271B1
公开(公告)日：2002-12-10
申请号：US09609711
申请日：2000-06-30
申请人： Yoshihiro Uozumi , Hisashi Okuchi , Soichi Nadahara , Yoshihiro Ogawa , Hiroshi Tomita
发明人： Yoshihiro Uozumi , Hisashi Okuchi , Soichi Nadahara , Yoshihiro Ogawa , Hiroshi Tomita
IPC分类号： H01L21302
CPC分类号： H01L21/76865 , H01L21/32134 , H01L21/76831 , H01L21/76843 , H01L21/76897
摘要： A titanium nitride film is selectively etched relative to a tungsten film by using as an etchant a solution containing hydrochloric acid and a hydrogen peroxide solution, the molar ratio of the hydrogen peroxide in the hydrogen peroxide solution to hydrogen chloride in the hydrochloric acid being 1/100 or less.
摘要翻译：通过使用含有盐酸和过氧化氢溶液的溶液作为蚀刻剂，相对于钨膜选择性地蚀刻氮化钛膜，过氧化氢中的过氧化氢与盐酸中的氯化氢的摩尔比为1 / 100以下。

53. 发明授权

US08741168B2 Wet etching method for silicon nitride film 有权
标题翻译：氮化硅膜湿法蚀刻法
公开(公告)号：US08741168B2
公开(公告)日：2014-06-03
申请号：US13424904
申请日：2012-03-20
申请人： Yasuhito Yoshimizu , Hisashi Okuchi , Hiroshi Tomita
发明人： Yasuhito Yoshimizu , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： C03C15/00
CPC分类号： H01L21/31111 , H01L21/31144
摘要： According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film.
摘要翻译：根据一个实施例，蚀刻方法包括：提供耐蚀刻材料; 并蚀刻氮化硅膜。供给包括将耐蚀刻材料供给到包括氮化硅膜的表面和非蚀刻膜的表面的处理表面，非蚀刻膜包括不同于氮化硅膜的材料。蚀刻包括在耐腐蚀材料的状态下使用蚀刻剂在非蚀刻膜的表面上比在氮化硅膜的表面上相对更密集地形成的蚀刻氮化硅膜。

54. 发明授权

US08709170B2 Supercritical drying method for semiconductor substrate 有权
标题翻译：半导体衬底的超临界干燥方法
公开(公告)号：US08709170B2
公开(公告)日：2014-04-29
申请号：US13052232
申请日：2011-03-21
申请人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
发明人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
IPC分类号： B08B7/00 , B08B7/04 , B08B3/00
CPC分类号： H01L21/67034
摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.
摘要翻译：在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中用水溶性有机溶剂润湿。然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

55. 发明授权

US08695145B2 Cleaning method, cleaning apparatus 有权
标题翻译：清洗方法，清洗装置
公开(公告)号：US08695145B2
公开(公告)日：2014-04-15
申请号：US13422771
申请日：2012-03-16
申请人： Yasuhito Yoshimizu , Hisashi Okuchi , Hiroshi Tomita
发明人： Yasuhito Yoshimizu , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： B08B11/00 , H01L21/304
CPC分类号： A46B13/02 , A46B13/001 , A46B2200/30 , H01L21/67046 , H01L21/67754
摘要： Transferring plural semiconductor substrates under a state being held with predetermined intervals; holding the plural semiconductor substrates with roll brushes provided in plural pieces by each front side and back side of the plural semiconductor substrates, longitudinal directions of the roll brushes being oriented in parallel relative to the front side and the back side; and cleaning the plural semiconductor substrates by rotating the plural roll brushes.
摘要翻译：在保持预定间隔的状态下转移多个半导体衬底; 通过多个半导体衬底的每个前侧和后侧保持多个具有多个片材的辊刷的半导体衬底，辊刷的纵向方向相对于前侧和后侧平行取向; 以及通过旋转所述多个辊刷来清洁所述多个半导体衬底。

56. 发明申请

US20130065400A1 ETCHING METHOD 有权
标题翻译：蚀刻方法
公开(公告)号：US20130065400A1
公开(公告)日：2013-03-14
申请号：US13424904
申请日：2012-03-20
申请人： Yasuhito Yoshimizu , Hisashi Okuchi , Hiroshi Tomita
发明人： Yasuhito Yoshimizu , Hisashi Okuchi , Hiroshi Tomita
IPC分类号： H01L21/306
CPC分类号： H01L21/31111 , H01L21/31144
摘要： According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film.
摘要翻译：根据一个实施例，蚀刻方法包括：提供耐蚀刻材料; 并蚀刻氮化硅膜。供给包括将耐蚀刻材料供给到包括氮化硅膜的表面和非蚀刻膜的表面的处理表面，非蚀刻膜包括不同于氮化硅膜的材料。蚀刻包括在耐腐蚀材料的状态下使用蚀刻剂在非蚀刻膜的表面上比在氮化硅膜的表面上相对更密集地形成的蚀刻氮化硅膜。

57. 发明申请

US20120186097A1 SUPERCRITICAL DRYING DEVICE AND METHOD 审中-公开
标题翻译：超临界干燥装置及方法
公开(公告)号：US20120186097A1
公开(公告)日：2012-07-26
申请号：US13160350
申请日：2011-06-14
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Yukiko Kitajima
IPC分类号： F26B3/00 , F26B25/06
CPC分类号： F26B3/00
摘要： Certain embodiments provide a supercritical drying device, comprising a sealable first vessel; a fluorine adsorbent provided inside the first vessel; a second vessel being provided inside the first vessel and housing a semiconductor substrate; a heater heating the inside of the first vessel; a pipe connected to the first vessel; and a valve provided on the pipe. Free fluorine generated by heating a fluorine containing solvent is adsorbed to the fluorine adsorbent.
摘要翻译：某些实施例提供了一种超临界干燥装置，包括可密封的第一容器; 设置在第一容器内的氟吸附剂; 第二容器设置在第一容器的内部并容纳半导体衬底; 加热器加热第一容器的内部; 连接到第一船的管道; 以及设置在管上的阀。通过加热含氟溶剂产生的游离氟吸附到氟吸附剂上。

58. 发明授权

US08961696B2 Method and device for cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的方法和装置
公开(公告)号：US08961696B2
公开(公告)日：2015-02-24
申请号：US13423583
申请日：2012-03-19
申请人： Hiroshi Tomita , Minako Inukai , Hiaashi Okuchi , Linan Ji
发明人： Hiroshi Tomita , Minako Inukai , Hiaashi Okuchi , Linan Ji
IPC分类号： B08B7/00 , H01L21/67 , H01L21/02
CPC分类号： H01L21/67005 , H01L21/02057 , H01L21/67028
摘要： According to one embodiment, a method for cleaning a semiconductor substrate comprises supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, cooling the semiconductor substrate after stopping the heating and the supply of the water vapor and freezing water on the semiconductor substrate, after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film, and after melting the frozen film, drying the semiconductor substrate.
摘要翻译：根据一个实施例，一种用于清洁半导体衬底的方法包括：在预定温度下对半导体衬底加热的同时，在形成有凹凸图案的半导体衬底的表面上提供水蒸气，在停止加热后冷却半导体衬底以及在半导体衬底上的水蒸气和冷冻水的供应，在冷冻水之后，将纯水供应到半导体衬底上并熔化冷冻的膜，并且在熔化冷冻膜之后干燥半导体衬底。

59. 发明申请

US20090255558A1 CLEANING APPARATUS FOR SEMICONDUCTOR WAFER AND CLEANING METHOD FOR SEMICONDUCTOR WAFER 有权
标题翻译：半导体滤波器的清洗装置和半导体滤波器的清洁方法
公开(公告)号：US20090255558A1
公开(公告)日：2009-10-15
申请号：US12412638
申请日：2009-03-27
申请人： Minako Inukai , Hiroshi Tomita , Kaori Umezawa , Yasuhito Yoshimizu , Linan Ji
发明人： Minako Inukai , Hiroshi Tomita , Kaori Umezawa , Yasuhito Yoshimizu , Linan Ji
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , H01L21/67051
摘要： A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.
摘要翻译：一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

60. 发明授权

US08190363B2 Driving support system, driving support method and computer program for setting and using facility entry difficulty levels 有权
标题翻译：驾驶支持系统，驾驶支持方法和计算机程序，用于设置和使用设施进入难度级别
公开(公告)号：US08190363B2
公开(公告)日：2012-05-29
申请号：US12382227
申请日：2009-03-11
申请人： Hiroshi Tomita , Takahiro Miyachi
发明人： Hiroshi Tomita , Takahiro Miyachi
IPC分类号： G01C21/34
CPC分类号： G08G1/164 , G01C21/3461 , G01C21/3484
摘要： When a vehicle enters a facility off a road on which the vehicle is traveling, information pertaining to an entry direction into the facility is sent to a probe center as probe information, and a current driving level of the host vehicle is identified. Meanwhile, the probe center that received the probe information calculates a right-turn entry percentage for facilities based upon the received probe information, and sets an entry difficulty level of the facilities based upon the calculated right-turn entry percentage. A vehicle to which information pertaining to the entry difficulty level of a set facility was distributed from the probe center is structured so as to perform driving support based upon the information pertaining to the entry difficulty level of the facility.
摘要翻译：当车辆从车辆行驶的道路进入设施时，将关于进入设施的进入方向的信息作为探测信息发送到探测中心，并且识别本车辆的当前驾驶水平。同时，接收探测信息的探测中心根据接收到的探测信息计算设施的右转进入百分比，并根据计算出的右转进入百分比设定设备的入口难度等级。根据与设施的进入难易程度有关的信息，构成从探测中心分发与设定设施的进入难度等级有关的信息的车辆，以进行驾驶辅助。

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