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51. 发明授权

US4637013A Token exchange data transmission system having system configuration discrimination 失效
标题翻译：具有系统配置辨别的令牌交换数据传输系统
公开(公告)号：US4637013A
公开(公告)日：1987-01-13
申请号：US625823
申请日：1984-06-28
申请人： Yasuo Nakamura
发明人： Yasuo Nakamura
IPC分类号： H04L12/417 , H04J3/02 , H04J3/16
CPC分类号： H04L12/417
摘要： A data transmission system for a LAN has a number of nodes connected in a ring or bus network. Each node has a transmit-receive circuit, a RAM, a CPU, a self node address switch, and an interface control. The frequency of adjacent node retrieval processing operation is set to be high in an initial period after the node is powered, and is set to be low thereafter. A new node added to the network can obtain a communication right within a relatively short period of time. Each node or the system can also have a maximum node address switch to allow the CPU to discriminate the current maximum address within the network. A node to be assigned with the communication right next can be discriminated fast. First and second downstream node addresses can also be stored in the RAM to allow the node to assign the communication right to the second downstream node in case the first downstream node has failed due to power failure or the like. Node address management can be performed by adding a sending origin address to the communication right, so that each node can discriminate the system configuration.
摘要翻译：用于LAN的数据传输系统具有连接在环形或总线网络中的多个节点。每个节点具有发送接收电路，RAM，CPU，自身节点地址开关和接口控制。相邻节点检索处理操作的频率在节点上电之后的初始时段被设置为高，此后被设置为低。添加到网络中的新节点可以在相对较短的时间内获得通信权限。每个节点或系统还可以具有最大节点地址切换，以允许CPU区分网络中当前的最大地址。可以快速地识别要分配下一个通信的节点。第一和第二下游节点地址也可以存储在RAM中，以允许节点在第一下游节点由于电源故障等而失败的情况下向第二下游节点分配通信权限。可以通过向通信权添加发送原始地址来执行节点地址管理，使得每个节点可以区分系统配置。

52. 发明授权

US4553690A Clutch rotor for an electromagnetic clutch and method of making the rotor 失效
标题翻译：用于电磁离合器的离合器转子和制造转子的方法
公开(公告)号：US4553690A
公开(公告)日：1985-11-19
申请号：US511961
申请日：1983-07-08
申请人： Yasuo Nakamura
发明人： Yasuo Nakamura
IPC分类号： B21D53/26 , F16D27/112 , F16D27/14 , F16H55/44 , F16H7/02
CPC分类号： B21D53/261 , F16D27/112 , F16D27/14 , F16H55/44 , F16D2250/00 , Y10T29/49481
摘要： An electromagnetic clutch with an improved rotor, and a method of manufacturing the rotor includes the steps of: (a) forming a cup-shaped blank with a generally cylindrical flange wall and a bottom plate by bending a piece of sheet metal; (b) forming at least one approximately V-shaped groove in the blank flange wall by a pressing operation; (c) forming a final V-shaped groove by applying a roller working operation to the approximately V-shaped groove; and (d) welding an inner cylindrical member to a radial inner surface of the bottom plate of the cup-shaped blank.
摘要翻译：具有改进的转子的电磁离合器和制造转子的方法包括以下步骤：（a）通过弯曲一块金属板来形成具有大致圆柱形凸缘壁和底板的杯形坯料; （b）通过按压操作在所述坯料凸缘壁中形成至少一个大致V形槽; （c）通过对大致V形槽施加辊加工操作形成最终的V形槽; 和（d）将内圆柱形构件焊接到杯形坯料的底板的径向内表面。

53. 发明授权

US4409395A Process for the production of glycollic acid esters 失效
标题翻译：用于生产乙醇酸酯的方法
公开(公告)号：US4409395A
公开(公告)日：1983-10-11
申请号：US340033
申请日：1982-01-18
申请人： Haruhiko Miyazaki , Koichi Hirai , Taizo Uda , Yasuo Nakamura , Harumi Ikezawa , Takanori Tsuchie
发明人： Haruhiko Miyazaki , Koichi Hirai , Taizo Uda , Yasuo Nakamura , Harumi Ikezawa , Takanori Tsuchie
IPC分类号： B01J23/00 , C07B61/00 , C07C67/32 , C07C69/675 , C07C69/66
CPC分类号： C07C69/675
摘要： In a process for producing a glycollic acid ester by the vapor phase catalytic hydrogenation of an oxalic acid diester in the presence of a catalyst and hydrogen gas, the improvement wherein the oxalic acid diester in the vaporous state is contacted with hydrogen gas in the presence of a catalyst composed of Ag or Pd supported on a solid carrier at a temperature of from about 120.degree. C. to about 300.degree. C.
摘要翻译：在催化剂和氢气存在下，通过草酸二酯的气相催化氢化生产乙醇酸酯的方法，其中在气态下的草酸二酯在氢气存在下与氢气接触由固体载体负载在约120℃至约300℃的由Ag或Pd组成的催化剂。

54. 发明授权

US08866171B2 Light-emitting element and light-emitting device 有权
标题翻译：发光元件和发光元件
公开(公告)号：US08866171B2
公开(公告)日：2014-10-21
申请号：US13412851
申请日：2012-03-06
申请人： Yasuo Nakamura , Satoshi Seo , Masaaki Hiroki
发明人： Yasuo Nakamura , Satoshi Seo , Masaaki Hiroki
IPC分类号： H01L33/00 , H01L23/52 , H01L21/00 , H01L21/82 , H01L21/84 , H01L21/44 , H01L51/52 , H01L27/32
CPC分类号： H01L27/3225 , H01L27/3244 , H01L27/3281 , H01L51/5221 , H01L51/529 , H01L2251/5361 , H01L2251/568
摘要： To provide a light-emitting element or a light-emitting device in which power is not consumed wastefully even if a short-circuit failure occurs. The present invention focuses on heat generated due to a short-circuit failure which occurs in a light-emitting element. A fusible alloy which is melted at temperature T2 by heat generated due to the short-circuit failure when the short-circuit failure occurs is used for at least one of a pair of electrodes in a light-emitting element, and a layer containing an organic composition which is melted at temperature T1 is formed on a surface of the electrode opposite to a surface facing the other electrode. The present inventors have reached a structure in which the temperature T2 is lower than temperature T3 at which the light-emitting element is damaged and the temperature T1 is lower than the temperature T2, and this structure can achieve the objects.
摘要翻译：为了提供即使发生短路故障也不浪费电力的发光元件或发光装置。本发明着重于由发生在发光元件中的短路故障而产生的热量。在发生短路故障时由于短路故障而产生的热量在温度T2下熔化的可熔合金被用于发光元件中的一对电极中的至少一个，以及含有有机物的层在与面对另一个电极的表面相反的电极的表面上形成在温度T1熔化的组合物。本发明人已经达到了温度T2低于发光元件损坏的温度T3并且温度T1低于温度T2的结构，并且该结构可以实现目的。

55. 发明授权

US08609181B2 Light emitting device and method for fabricating light emitting device 有权
公开(公告)号：US08609181B2
公开(公告)日：2013-12-17
申请号：US12507820
申请日：2009-07-23
申请人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
发明人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
IPC分类号： B05D5/06
CPC分类号： H01L27/3276 , G02F1/136204 , H01L27/3246 , H01L27/3248 , H01L51/5092 , H01L51/5203 , H01L51/5228 , H01L51/5234 , H01L2251/5315
摘要： It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.

56. 发明授权

US08253144B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08253144B2
公开(公告)日：2012-08-28
申请号：US12898345
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
发明人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
IPC分类号： H01L27/14
CPC分类号： H01L27/12 , H01L27/124
摘要： As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：对于以显示装置为代表的半导体装置，其目的在于提供一种高可靠性的可应用大尺寸或高清晰度屏幕的高可靠性半导体装置，其具有高显示质量并且稳定地工作。通过使用包含Cu作为长引线的导电层，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的半导体层不重叠并且被包括氮化硅的绝缘层包围的方式设置，由此可以防止Cu的扩散 ; 因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

57. 发明申请

US20110272717A1 Light Emitting Device And Method of Manufacturing The Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110272717A1
公开(公告)日：2011-11-10
申请号：US13188513
申请日：2011-07-22
申请人： Takeshi Nishi , Yasuo Nakamura
发明人： Takeshi Nishi , Yasuo Nakamura
IPC分类号： H01L27/15
CPC分类号： H01L51/5253 , H01L27/32 , H01L27/322 , H01L27/3244 , H01L33/56 , H01L51/0024 , H01L51/5221 , H01L51/5237 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are seated by the first sealing material and the second sealing material. Further, reaction between electrodes of the light emitting elements (cathodes or anodes) and the sealing materials can be prevented by covering the electrodes with a transparent protective layer, for example, CaF2, MgF2, or BaF2.
摘要翻译：提供了具有防止氧气和水分到达发光元件的结构的发光器件及其制造方法。此外，通过使用少量的工艺步骤来密封发光元件，而不包封干燥剂。本发明具有顶面发射结构。其上形成有发光元件的基板被接合到透明密封基板。该结构是当粘合两个基板时透明第二密封材料覆盖像素区域的整个表面的结构，以及包含间隙材料（填料）的第一密封材料（具有比第二密封材料更高的粘度）微粒等），用于保护两个基板之间的间隙，围绕像素区域。两个基板由第一密封材料和第二密封材料密封。此外，通过用透明保护层覆盖电极可以防止发光元件（阴极或阳极）的电极与密封材料之间的反应，例如CaF 2，MgF 2或BaF 2。

58. 发明申请

US20110084267A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084267A1
公开(公告)日：2011-04-14
申请号：US12898357
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以防止因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

59. 发明申请

US20090286445A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING LIGHT EMITTING DEVICE 有权
标题翻译：发光装置和制造发光装置的方法
公开(公告)号：US20090286445A1
公开(公告)日：2009-11-19
申请号：US12507820
申请日：2009-07-23
申请人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
发明人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
IPC分类号： H01J9/00
CPC分类号： H01L27/3276 , G02F1/136204 , H01L27/3246 , H01L27/3248 , H01L51/5092 , H01L51/5203 , H01L51/5228 , H01L51/5234 , H01L2251/5315
摘要： It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.
摘要翻译：本发明的目的是提供一种用于制造发光器件的方法，其中可以防止由于对电极的电位降低引起的亮度梯度的观察，并且可以在不增加步骤数的情况下形成辅助电极即使提高了发光装置的精度。本发明的另一个目的是提供一种根据该方法制造的发光器件。发光器件在每个像素中具有发光元件和辅助电极。发光元件包括第一电极，第二电极，设置在第一和第二电极之间的电致发光层。此外，第一电极通过形成在绝缘膜中的第一开口与电致发光层和形成在绝缘膜上的第二电极重叠。此外，辅助电极通过形成在第二绝缘膜上的第二开口与第二电极重叠。

60. 发明授权

US07541734B2 Light emitting device having a layer with a metal oxide and a benzoxazole derivative 有权
标题翻译：具有具有金属氧化物和苯并恶唑衍生物的层的发光器件
公开(公告)号：US07541734B2
公开(公告)日：2009-06-02
申请号：US10947316
申请日：2004-09-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Hisao Ikeda , Yasuo Nakamura , Keiko Saito
发明人： Shunpei Yamazaki , Junichiro Sakata , Hisao Ikeda , Yasuo Nakamura , Keiko Saito
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01L27/3272 , H01L27/1218 , H01L27/1222 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L33/08 , H01L33/36 , H01L33/50 , H01L33/56 , H01L33/58 , H01L51/5052 , H01L51/5088 , H01L51/5092 , H01L51/5203 , H01L51/5212 , H01L51/5228 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/5262 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： It is an object of the present invention to provide a light-emitting device that is high in color purity of light and is high in light extraction efficiency, where sputtering is used to form an electrode on an electroluminescent layer without damage to a layer including an organic material.The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer formed on the first electrode, and a second electrode formed on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
摘要翻译：本发明的一个目的是提供一种光的色纯度高，光提取效率高的发光装置，其中使用溅射法在电致发光层上形成电极而不会损伤包括有机材料。本发明提供一种包括发射红光的第一发光元件，发出绿光的第二发光元件，发出蓝光的第三发光元件和滤色器的发光器件，其中滤色器包括选择性地透射红光的第一着色层，选择性地透射绿光的第二着色层和选择性地透射蓝光的第三着色层，第一至第三发光元件分别对应于第一至第三着色层层，其中第一至第三发光元件中的每一个具有第一电极，形成在第一电极上的电致发光层和形成在电致发光层上的第二电极，并且其中电致发光层包括与第二电极接触的层电极和与第二电极接触的层中包含金属氧化物或苯并恶唑衍生物。

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