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51. 发明专利

JPS61120432A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS61120432A
公开(公告)日：1986-06-07
申请号：JP24061084
申请日：1984-11-16
申请人： Hitachi Ltd
发明人： SATO TOSHIHIKO , KASAHARA OSAMU
IPC分类号： H01L21/52 , H01L21/58 , H01L21/60 , H01L23/52
CPC分类号： H01L24/83 , H01L24/29 , H01L24/81 , H01L24/94 , H01L2224/16145 , H01L2224/291 , H01L2224/29144 , H01L2224/83101 , H01L2224/8319 , H01L2224/83805 , H01L2224/8385 , H01L2224/94 , H01L2924/0105 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/07802 , H01L2224/81 , H01L2924/01014 , H01L2924/00
摘要： PURPOSE:To reduce the thermal resistance in a bond section, by mounting chips on a semiconductor substrate through flip-chip-type projection electrodes, applying a metallic layer on the rear face of the substrate at a temperature lower than the melting point of the projection electrodes and bonding the metallic layer to a package substrate with a low-melting brazing material. CONSTITUTION:Semiconductor chips 2 are electrically connected to the surface of a mother chip 1 provided with wirings, by means of flip-chip-type projection electrodes 3. While the chip side of the mother chip 1 is cooled, Au and Si are simultaneously spattered thereon to provide a metallic layer 4. After dicing the mother chip, the diced mother chip 1 is overlayed on a package substrate 8 provided with an Au metallized layer 7 by means of a low-melting brazing material of Au.Sn foil 6 and heat treated so that the mother chip 1 is firmly bonded to the package substrate 8. According to this method, the thermal resistance in the bonded section is reduced and therefore the heat-dissipating efficiency of the chips 2 can be improved.
摘要翻译：目的：为了降低接合部的热阻，通过倒装芯片型突起电极将芯片安装在半导体基板上，在低于突起的熔点的温度下在基板的背面上涂布金属层电极，并用低熔点钎焊材料将金属层粘合到封装衬底上。构成：半导体芯片2通过倒装芯片型突起电极3与配有布线的母芯片1的表面电连接。母芯片1的芯片侧被冷却时，Au和Si同时溅出在其上切割母芯片后，通过Au.Sn箔6的低熔点钎焊材料和加热的热量将切割的母芯片1覆盖在设有Au金属化层7的封装衬底8上进行处理，使得母芯片1牢固地结合到封装基板8.根据该方法，结合部分的热阻降低，因此可以提高芯片2的散热效率。

52. 发明专利

JPS60245252A MULTILAYER INTERCONNECTION MEMBER 失效
公开(公告)号：JPS60245252A
公开(公告)日：1985-12-05
申请号：JP10045984
申请日：1984-05-21
申请人： HITACHI LTD
发明人： KASAHARA OSAMU , SASABE SHIYUNJI
IPC分类号： H01L23/522 , H01L21/768
摘要： PURPOSE:To improve the reliability of the titled member by a method wherein the second conductive layer serving as an etching stopper is provided on the first conductive layer, and the insulation between the second layer wiring and the third layer wiring is improved by homogenizing the insulation film covering the second layer wiring. CONSTITUTION:A field insulation layer 2 and an insulation layer 3 are formed in the main surface part of a required region of a substrate 1. The first layer wiring 4 is formed in a required region of the upper surface part of the insulation layer 3; thereafter, an insulation layer 5 is formed. Conductive layers 7, 7A are formed to fill a connection hole 6, and conductive layers 8, 8A made of Cu or Cu alloy are formed on the conductive layers 7, 7A to form an etching inhibition member 8. After the photo resist layer 13 on this member 8 is removed, the second layer wiring 9 is formed. Thereafter, the second layer wiring 10 and the third layer wiring 11 are formed. Since an eye open 9A does not allow the formation of crevasses in the second layer wiring 9 and the third layer wiring 11, the film quality of the second insulation layer 10 is made uniform, and the electric insulation of those layers can be improved.

53. 发明专利

JPS6015150B2 失效
公开(公告)号：JPS6015150B2
公开(公告)日：1985-04-17
申请号：JP2430281
申请日：1981-02-23
申请人： HITACHI LTD
发明人： KASAHARA OSAMU , NARAOKA KYOTAKE
IPC分类号： H01L21/60 , H01L21/28 , H01L23/532 , H01L29/43

54. 发明专利

JPS5847854B2 JPS5847854B2 - 失效
标题翻译：空值
公开(公告)号：JPS5847854B2
公开(公告)日：1983-10-25
申请号：JP2430381
申请日：1981-02-23
申请人： Hitachi Ltd
发明人： KASAHARA OSAMU , NARAOKA KYOTAKE
IPC分类号： H01L21/60 , H01L21/28 , H01L23/532 , H01L29/43
CPC分类号： H01L24/05 , H01L23/532 , H01L24/03 , H01L2224/04042 , H01L2224/05624 , H01L2224/48 , H01L2224/4847 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/014 , H01L2924/00014 , H01L2924/00012

55. 发明专利

JPS586973A SPUTTERING DEVICE 失效
公开(公告)号：JPS586973A
公开(公告)日：1983-01-14
申请号：JP10446381
申请日：1981-07-06
申请人： HITACHI LTD
发明人： OOGISHI HIDEJI , KASAHARA OSAMU
IPC分类号： C23C14/34 , H01J37/34 , H01L21/285 , H01L21/31
摘要： PURPOSE:To provide a titled device which can prevent the inclusion of the material of a shielding ring into a sputtering film by differing the potential upon a target material and the shielding ring and interposing a guard ring for preventing electric discharge between the shielding ring and a magnet. CONSTITUTION:In this sputtering device, a shielding ring 32 is fixed to a sputtering shield 30 grounded to the earth potential and therefore the potential of the ring 32 differs from the potential of a target material 4. Therefore, if high frequency electric power is applied from a high frequency electric power source 10, only the Si material of the material 14 is sputtered without sputtering the side surface on the target plate 14 side of the ring 32, whereby an Si sputtering film of high purity is stuck and deposited on a substrate. Since a guard ring 34 is interposed between the ring 32 and a magnet 20, the generation of the abnormal electric discharge between the ring 32 and the magnet 20 is inhibited.

56. 发明专利

JPS56124245A MANUFACTURING OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56124245A
公开(公告)日：1981-09-29
申请号：JP2430281
申请日：1981-02-23
申请人： HITACHI LTD
发明人： KASAHARA OSAMU , MASUOKA KIYOTAKE
IPC分类号： H01L21/60 , H01L21/28 , H01L23/532 , H01L29/43
摘要： PURPOSE:To prevent an Si substrate and an aluminum wiring from mutual dispersion by providing a silicified platinum layer between them, and also to prevent an SiO2 membrane from exfoliation by providing an aluminum pad on its surface. CONSTITUTION:A base emitter layer is formed on an Si substrate 1. As for the emitter layer, SiO2 4 is provided with an opening, Pt is attached by soldering and heated to selectively form Pt-Si layer 6 so as to prevent mutual dispersion between Si and Al. And then, a wiring layer for two layers of Mo 7 and Al 9 is provided, covered with SiO2 10 and an opening 11 is selectively provided. An Al wiring 12a and a joining pad 12b for the second layer are provided at the opening, and an Al wiring is joined to the pad 12b by supersonic wave. In this mechanism, since the Al pad 12b and the SiO2 membrane 4 are joined together directly, the joining strength become large, and in the case of a thermal oxide membrane, in particular, since the membrane is much harder than a CVD membrane, the joint is ensured. Further, as compared with an Al-Mo dual structure pad, possibility of exfoliation of the pad becomes as small as less than 1%.

57. 发明专利

JPS5364679A PREPARATION OF THIN FILM 失效
公开(公告)号：JPS5364679A
公开(公告)日：1978-06-09
申请号：JP13958076
申请日：1976-11-22
申请人： HITACHI LTD
发明人： KASAHARA OSAMU , NAKADA KENSUKE
IPC分类号： C23C14/54 , C23C14/56
摘要： PURPOSE:To decrease defects of thin film without causing adherence of dust or impurities on the thin film by detecting flow in the process of evacuation of a vacuum chamber, and by controlling the gas flow in accordance with the detected signal is order to prevent formation of turbulent flow.

58. 发明专利

JPS52112279A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS52112279A
公开(公告)日：1977-09-20
申请号：JP2811476
申请日：1976-03-17
申请人： HITACHI LTD
发明人： NAKADA KENSUKE , MIZUKAMI KOUICHIROU , KASAHARA OSAMU , TOMOSAWA AKIHIRO
IPC分类号： H01L21/3213 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To secure formation of high-dependability electrode or wiring layer by removing selectively Si particle left on the substrate against Si - Al film by use of CF4 gas plasma.

59. 发明专利

JPS5165586A Handotaisochiniokerudenkyokuhaisensono keiseiho 失效
公开(公告)号：JPS5165586A
公开(公告)日：1976-06-07
申请号：JP13841474
申请日：1974-12-04
申请人： Hitachi Ltd
发明人： KASAHARA OSAMU , MORIGUCHI NOBUO , MIZUKAMI KOICHIRO , OZAKI MAMORU
IPC分类号： H01L21/3213 , H01L21/306

60. 发明专利

JPH08264710A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, MANUFACTURE THEREOF AND SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH08264710A
公开(公告)日：1996-10-11
申请号：JP6908895
申请日：1995-03-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： MITARAI KAZUKO , HORIUCHI MITSUAKI , TANABE SHINICHI , KASAHARA OSAMU
IPC分类号： H01L25/00 , H01L21/318 , H01L21/822 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/04
摘要： PURPOSE: To reduce the manufacturing cost of a multichip module having a decoupling capacitor formed on a silicon base whereon a semiconductor chip is mounted. CONSTITUTION: A multichip module having a silicon base 1 and a decoupling capacitor which is constructed of a dielectric film 2 on the silicon base 1 and of an Al electrode 4 on the dielectric film 2. The resistivity of the silicon base 1 is about 10-20mΩ-cm and an N semiconductor layer being of the same conductivity type as the silicon base 1 and having higher impurity concentration than the silicon base 1 is formed on the surface of the silicon base 1, while a low- resistance metal layer 19 is formed on the rear of the silicon base 1. The dielectric film 2 is constituted of a three-layer film of a silicon oxide film, a silicon nitride film and the silicon oxide film.

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