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    • 55. 发明专利
    • RESIN MOLD SEMICONDUCTOR DEVICE
    • JPS5588357A
    • 1980-07-04
    • JP15986178
    • 1978-12-27
    • HITACHI LTD
    • NISHI KUNIHIKOWAKASHIMA YOSHIAKIINAYOSHI HIDEO
    • H01L23/34H01L23/29H01L23/31
    • PURPOSE:To prevent breakages of a substrate and also to improve heat-radiation characteristic by absorbing a thermal stress generated in a resin layer by a rubber layer by covering a semiconductor substrate with the first mold layer of high heat conductive rubber and the second mold layer of high heat conductive resin. CONSTITUTION:A semiconductor substrate 11 for IC having pn-junction is fixed on a tab 12, and a plural lead strip 13 arranged around the tab 12 and the substrate are connected with a bonding wire 14. The substrate 11 is first covered with a high heat conductive rubber like silicone rubber containing a large amount of inorganic insulator powder like alumina powder, BN powder, etc. to form the first mold layer 15. Next, the second mold layer 16 is formed by covering with a high heat conductive resin like epoxy resin or silicone resin containing inorganic insulator powder. Breakage of the substrate can be now prevented and also the heat-radiation characteristic can be improved by arranging to absorb the thermal stress arising in the resin layer 16 by the elastic rubber layer 15 and prevent on the substrate 11 from its influence.