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    • 51. 发明申请
    • Motor Driving Circuit
    • 电机驱动电路
    • US20090058328A1
    • 2009-03-05
    • US12200744
    • 2008-08-28
    • Takaaki IshiiTakashi TsukagoshiAkira Suzuki
    • Takaaki IshiiTakashi TsukagoshiAkira Suzuki
    • H02K41/035
    • H02P25/034
    • A motor driving circuit for controlling a current amount flowing through a motor coil includes: a comparator configured to output a comparison signal indicating a comparison result between a set current amount and a current amount based on an inputted set current signal according to the set current amount and a current signal according to the current amount flowing through the motor coil; a current control signal update circuit configured to update a current control signal for controlling the current amount flowing through the motor coil in a stepwise manner so that the current amount flowing through the motor coil is changed to the set current amount in a stepwise manner, based on the comparison signal outputted from the comparator; and a driving circuit configured to drive the motor coil based on the current control signal outputted from the current control signal update circuit.
    • 用于控制流过电动机线圈的电流量的电动机驱动电路包括:比较器,被配置为根据设定的电流量输出表示设定电流量与电流量之间的比较结果的比较信号,该比较信号基于输入的设定电流信号 以及根据流过电动机线圈的电流量的电流信号; 电流控制信号更新电路,被配置为以逐步的方式更新用于控制流过电动机线圈的电流量的电流控制信号,使得流过电动机线圈的电流量以逐步的方式被改变为设定电流量 对比较器输出的比较信号; 以及驱动电路,被配置为基于从当前控制信号更新电路输出的电流控制信号来驱动电动机线圈。
    • 54. 发明授权
    • Semiconductor device with a peeling prevention layer
    • 具有防剥层的半导体装置
    • US07382037B2
    • 2008-06-03
    • US11236881
    • 2005-09-28
    • Mitsuo UmemotoKojiro KameyamaAkira Suzuki
    • Mitsuo UmemotoKojiro KameyamaAkira Suzuki
    • H01L23/544
    • H01L27/1462H01L21/76898H01L23/3114H01L23/3192H01L23/564H01L27/14636H01L2924/0002Y10T29/49155Y10T29/49156Y10T29/49165H01L2924/00
    • The invention is directed to improvement of reliability of a semiconductor device having penetrating electrodes by preventing a protection film and an insulation film peeling. A peeling prevention layer for preventing an insulation film and a protection layer peeling is formed in corner portions of the semiconductor device. The peeling prevention layer can increase its peeling prevention effect more when formed in a vacant space of the semiconductor device other than the corner portions, for example, between ball-shaped conductive terminals. In a cross section of the semiconductor device, the peeling prevention layer is formed on the insulation film on the back surface of the semiconductor substrate, and the protection layer formed of a solder resist or the like is formed covering the insulation film and the peeling prevention layer. The peeling prevention layer has a lamination structure of a barrier seed layer and a copper layer formed thereon when formed by an electrolytic plating method.
    • 本发明旨在通过防止保护膜和绝缘膜剥离来提高具有穿透电极的半导体器件的可靠性。 在半导体器件的角部形成有用于防止绝缘膜和保护层剥离的防剥层。 当形成在除了角部之外的半导体器件的空置空间中时,例如在球形导电端子之间,防剥层可以增加其防剥离效果。 在半导体器件的横截面中,在半导体衬底的背面上的绝缘膜上形成防剥层,并且形成覆盖绝缘膜的防焊层等形成的防剥离层 层。 当通过电解电镀法形成时,防剥层具有阻挡种子层和形成在其上的铜层的叠层结构。
    • 55. 发明授权
    • Spark plug
    • 火花塞
    • US07368864B2
    • 2008-05-06
    • US11014830
    • 2004-12-20
    • Akira Suzuki
    • Akira Suzuki
    • H01T13/20
    • H01T13/467H01T13/39
    • A spark plug including: an insulator having an axial hole; a center electrode disposed in a tip end side of the axial hole of the insulator; a metal shell surrounding the insulator, a first ground electrode having one end bonded to the metal shell; a noble metal tip joined to an inner side face of another end portion of the first ground electrode body disposed opposite a tip end face of the center electrode; and a second ground electrode having one end bonded to the metal shell, and another end face disposed opposite a side peripheral face of said insulator to form a second discharge gap, wherein following relationships are satisfied as defined herein: 0.12≦S≦1.15, 0.3≦t≦1.5, A+0.7(F−A)≦1.8M, and −03≦L/H.
    • 一种火花塞,包括:具有轴向孔的绝缘体; 设置在绝缘体的轴向孔的前端侧的中心电极; 环绕绝缘体的金属壳,具有一端与金属壳结合的第一接地电极; 与所述第一接地电极体的与所述中心电极的前端面相对配置的另一端部的内侧面接合的贵金属端头; 以及第二接地电极,其一端接合到所述金属壳体,以及另一个端面,与所述绝缘体的侧面相对设置以形成第二放电间隙,其中满足以下定义的以下关系:0.12 <= S <= 1.15 ,0.3 <= t <= 1.5,A + 0.7(FA)<= 1.8M,-03 <= L / H。