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    • 52. 发明申请
    • GOLF CLUB HEAD
    • 高尔夫俱乐部头
    • US20100048324A1
    • 2010-02-25
    • US12196466
    • 2008-08-22
    • Kozue WadaHiroshi TakahashiWataru Ban
    • Kozue WadaHiroshi TakahashiWataru Ban
    • A63B53/04
    • A63B53/0466A63B60/54A63B2053/0408A63B2053/0412A63B2053/0433A63B2053/045A63B2071/0633A63B2209/00
    • There is provided a golf club head that produces a loud hitting sound satisfying the golfer even if the volume of the golf club head having a hollow structure is increased to at least about 400 cc. A golf club head 1 having a hollow structure comprises a face part 2, a side part 3 comprising a back side, a sole part 4, a crown part 5, and a hosel part 9 having a shaft insertion hole, and the crown part 5. The crown part comprises a thick region 6 and a thin region 8. The thick region 6 extends through a distance WA of at least about 20 mm from the center axis line C of the shaft insertion hole toward the highest point T of the crown part 5 and extends through a distance WB of at least about 30 mm from the center axis line C of the shaft insertion hole toward the back side so that the crown part 5 has the first-order natural frequency of at least about 3000 Hz.
    • 即使具有中空结构的高尔夫球杆头的体积增加到至少约400cc,也提供了一种高尔夫球杆头,其产生满足高尔夫球手的大声击球声。 具有中空结构的高尔夫球杆头1包括面部2,包括后侧的侧部3,底部4,冠部5和具有轴插入孔的插鞘部9,并且冠部5 冠部包括厚区域6和薄区域8.厚区域6延伸穿过轴插入孔的中心轴线C至少大约20mm的距离WA朝向冠部的最高点T延伸 并且从轴插入孔的中心轴线C朝向后侧延伸至少约30mm的距离WB,使得冠部5具有至少约3000Hz的一阶固有频率。
    • 58. 发明申请
    • LIQUID DROPLET FLIGHT DEVICE AND IMAGE FORMING APPARATUS
    • 液滴飞行装置和图像形成装置
    • US20090051735A1
    • 2009-02-26
    • US12194107
    • 2008-08-19
    • Hiroshi TakahashiIchiro KadotaToshihiro KanematsuMasaaki Yamada
    • Hiroshi TakahashiIchiro KadotaToshihiro KanematsuMasaaki Yamada
    • B41J2/06
    • B41J2/06B41J2/15B41J2002/14395B41J2002/14459
    • A liquid droplet flight device is provided that moves an ink or the like using a comparatively low voltage and stably causes flight of even a high viscosity ink or the like. When causing droplets of a liquid inside a liquid retaining section to fly onto a medium transported between liquid droplet discharge means and an opposing electrode in the liquid droplet flight device, a high voltage is applied to the flight electrode from a bias power source to generate an electric field between the flight electrode and the opposing electrode. On/off control of flight control means is performed in this state to apply a drive voltage of a low voltage to an EW drive electrode from a drive power source such that the liquid inside a slit moves to a leading end portion of the flight electrode due to an electrowetting phenomenon, and the liquid that has moved to the leading end portion of the flight electrode flies toward the opposing electrode through the electric field such that a liquid droplet lands on the medium.
    • 提供了使用较低电压移动墨水等的液滴飞行装置,并且稳定地引起甚至高粘度墨水等的飞行。 当使液体保持部分内的液滴液滴飞溅到在液滴排出装置中的液滴排出装置和相对电极之间运送的介质上时,高压从偏压电源施加到飞行电极,以产生 飞行电极与对置电极之间的电场。 在该状态下执行飞行控制装置的开/关控制,以从驱动动力源向EW驱动电极施加低电压的驱动电压,使得狭缝内的液体移动到飞行电极的前端部,由此 并且已经移动到飞行电极的前端部的液体通过电场朝向相对电极飞行,使得液滴落在介质上。
    • 59. 发明授权
    • Semiconductor memory device, semiconductor device, and method for production thereof
    • 半导体存储器件,半导体器件及其制造方法
    • US07432165B2
    • 2008-10-07
    • US11464711
    • 2006-08-15
    • Yuzo FukuzakiHiroshi Takahashi
    • Yuzo FukuzakiHiroshi Takahashi
    • H01L21/336
    • H01L27/10832H01L21/84H01L27/10867H01L27/1203
    • Disclosed are a semiconductor memory device, a semiconductor device, and a method for production thereof. The semiconductor memory device and semiconductor device do not need for a distance for alignment of lithography to make the contact hole with lithography to form the gate electrode. Hence the resulting devices have a reduced area for the cell array. The semiconductor memory device is composed of a substrate having trenches formed side by side, a plate electrode which is formed to a prescribed depth from the surface of the inner wall of the trench, a capacitor insulating film which covers the surface of the inner wall of the trench, a memory node electrode MN which fills the trench, with the capacitor insulating film interposed between them, and a memory node contact plug which is buried in a contact hole which is so made as to reach the memory node electrode from the surface of the semiconductor layer. A metallized region is integrally formed to connect at least part of the surface of the semiconductor layer and at least part of the surface of the contact plug to each other.
    • 公开了半导体存储器件,半导体器件及其制造方法。 半导体存储器件和半导体器件不需要用于光刻对准的距离以通过光刻形成接触孔以形成栅电极。 因此,所得到的器件具有减小的单元阵列的面积。 半导体存储器件由具有并排形成的沟槽的基板,从沟槽的内壁的表面形成规定深度的板电极构成,电容绝缘膜覆盖内壁的内壁的表面 沟槽,填充沟槽的存储器节点电极MN和介于其间的电容器绝缘膜,以及埋入接触孔中的存储器节点接触插塞,所述接触孔被制成从存储器节点电极的表面 半导体层。 金属化区域整体地形成,以将半导体层的表面的至少一部分和接触插塞的表面的至少一部分彼此连接。