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51. 发明公开

EP2327102A1 VERFAHREN ZUR LOKALEN KONTAKTIERUNG UND LOKALEN DOTIERUNG EINER HALBLEITERSCHICHT 审中-公开
标题翻译：方法的局部接触和局部掺杂的半导体层
公开(公告)号：EP2327102A1
公开(公告)日：2011-06-01
申请号：EP09778000.1
申请日：2009-08-20
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： PREU, Ralf , GROHE, Andreas , BIRO, Daniel , RENTSCH, Jochen , HOFMANN, Marc , NEKARDA, Jan-Frederik , WOLF, Andreas
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L21/2254 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： The invention relates to a method for local contacting and local doping of a semiconductor layer comprising the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: Metal layer, intermediate layer and semiconductor layer, forms and after solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

52. 发明公开

EP2289107A2 SOLARZELLE UND VERFAHREN ZU DEREN HERSTELLUNG 审中-公开
公开(公告)号：EP2289107A2
公开(公告)日：2011-03-02
申请号：EP09761404.4
申请日：2009-05-29
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： BIRO, Daniel , CLEMENT, Florian , SCHULTZ-WITTMANN, Oliver
IPC分类号： H01L31/0224 , H01L31/068
CPC分类号： H01L31/0682 , H01L31/02245 , H01L31/0504 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a solar cell comprising a semiconductor substrate with a front face and a rear face running substantially parallel thereto, a front face metallisation, a rear face metallisation and at least three doped regions having at least two different conductivity types: a first doped region with a first conductivity type is located on the front face of the semiconductor substrate and extends substantially over the entire front face; a second doped region with the opposite conductivity type to that of the first conductivity type is located on the rear face and extends partially over said face; and a third doped region with the first conductivity type is located on the rear face and extends partially over said face. The front face metallisation is connected to the first doped region and the rear face metallisation is connected to the second doped region in an electrically conductive manner and the solar cell has an electrically conductive connection which connects the third doped region to the front face metallisation and/or the first doped region.
摘要翻译：太阳能电池技术领域本发明涉及一种太阳能电池，该太阳能电池包括具有基本上平行于其延伸的前表面和后表面的半导体衬底，前表面金属化层，后表面金属化层和至少三个具有至少两种不同导电类型的掺杂区：第一掺杂具有第一导电类型的区域位于半导体衬底的正面上并且基本上在整个正面上延伸; 具有与第一导电类型导电类型相反的导电类型的第二掺杂区域位于背面上并且部分地延伸超过所述面; 并且具有第一导电类型的第三掺杂区域位于背面上并且部分地在所述面上延伸。正面金属化部分连接到第一掺杂区域，并且背面金属化部分以导电方式连接到第二掺杂区域，并且太阳能电池具有导电连接，该连接将第三掺杂区域连接到正面金属化和/ 或第一掺杂区域。

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