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51. 发明申请

US20050213413A1 Pentaarylcyclopentadienyl units as active units in resistive memory elements 失效
标题翻译：五芳基环戊二烯基单元作为电阻记忆元件中的活性单元
公开(公告)号：US20050213413A1
公开(公告)日：2005-09-29
申请号：US11092968
申请日：2005-03-30
申请人： Gunter Schmid , Hagen Klauk , Marcus Halik , Reimund Engl , Andreas Walter
发明人： Gunter Schmid , Hagen Klauk , Marcus Halik , Reimund Engl , Andreas Walter
IPC分类号： G11C5/00
CPC分类号： G11C13/0014 , B82Y10/00 , C08G61/02 , G11C13/0016 , G11C2213/72 , H01L51/0035 , H01L51/004 , H01L51/005 , H01L51/0591
摘要： Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.
摘要翻译：描述了表现出电阻滞后效应的聚合物。聚合物包括作为侧基键合五芳基环戊二烯基的聚合物主链。形成包含作为存储介质的聚合物的电阻式存储元件。通过施加电压，可以在非导通状态和导通状态之间切换存储元件。

52. 发明申请

US20050077606A1 Semiconductor arrangement comprising transistors based on organic semiconductors and non-volatile read-writing memory cells 有权
标题翻译：半导体装置包括基于有机半导体和非易失性读写存储器单元的晶体管
公开(公告)号：US20050077606A1
公开(公告)日：2005-04-14
申请号：US10495614
申请日：2002-11-15
申请人： Gunter Schmid , Marcus Halik , Hagen Klauk
发明人： Gunter Schmid , Marcus Halik , Hagen Klauk
IPC分类号： G11C11/22 , G11C13/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L27/28 , H01L51/05 , H01L29/94
CPC分类号： H01L27/28 , B82Y10/00 , G11C11/22 , H01L21/31691 , H01L51/0516
摘要： A semiconductor arrangement is disclosed, having transistors based on organic semiconductors and non-volatile read/write memory cells. The invention relates to a semiconductor arrangement, constructed from transistors, in the case of which the semiconductor path is composed of an organic semiconductor, and memory cells based on a ferroelectric effect perferably in a polymer, for use in RF-ID tags, for example.
摘要翻译：公开了具有基于有机半导体和非易失性读/写存储单元的晶体管的半导体装置。本发明涉及一种由晶体管构成的半导体装置，在半导体路径由有机半导体构成的情况下，以及基于聚合物中优先的铁电效应的存储单元，用于例如RF-ID标签。

53. 发明授权

US06787832B2 Semiconductor memory cell and semiconductor memory device 失效
标题翻译：半导体存储单元和半导体存储器件
公开(公告)号：US06787832B2
公开(公告)日：2004-09-07
申请号：US10395457
申请日：2003-03-24
申请人： Günter Schmid , Marcus Halik , Hagen Klauk , Christine Dehm , Thomas Haneder , Thomas Mikolajick
发明人： Günter Schmid , Marcus Halik , Hagen Klauk , Christine Dehm , Thomas Haneder , Thomas Mikolajick
IPC分类号： H01L2976
CPC分类号： B82Y10/00 , H01L21/28291 , H01L27/1159 , H01L29/6684
摘要： A semiconductor memory cell has a field-effect transistor device and a ferroelectric storage capacitor. The field-effect transistor device has a channel region that includes or is made of an organic semiconductor material. Besides a first gate electrode of the gate electrode configuration of the field-effect transistor device, an additional selection gate electrode is provided, by way of which the field-effect transistor device can be switched off without influencing the storage dielectric and independently of the first gate electrode.
摘要翻译：半导体存储单元具有场效晶体管器件和铁电存储电容器。场效应晶体管器件具有包含或由有机半导体材料制成的沟道区。除了场效应晶体管器件的栅电极结构的第一栅电极之外，还提供附加的选择栅电极，通过该栅电极可以切断场效晶体管器件而不影响存储电介质，并且独立于第一栅电极栅电极。

54. 发明授权

US07254883B2 Method for manufacturing a packaging material in the form of a laminate with an electrically conductive layer formed as an antenna structure 有权
标题翻译：制造具有形成为天线结构的导电层的叠层形式的包装材料的方法
公开(公告)号：US07254883B2
公开(公告)日：2007-08-14
申请号：US11124593
申请日：2005-05-06
申请人： Günter Schmid , Hagen Klauk , Marcus Halik
发明人： Günter Schmid , Hagen Klauk , Marcus Halik
IPC分类号： H02P11/00
CPC分类号： B32B15/20 , B32B15/08 , B32B2439/70 , B65D5/4233 , B65D2203/10 , G06K19/07749 , G06K19/0776 , G06K19/07779 , G06K19/07783 , H01Q1/22 , H01Q1/2225 , H01Q7/00 , Y10T29/49016 , Y10T29/49018 , Y10T29/4913 , Y10T156/1062 , Y10T428/13 , Y10T428/24917
摘要： A laminate is formed from a carrier layer and an electrically conductive layer. In one section, the conductive layer is formed into an antenna structure. The laminate is formed by placing a mask onto a packaging film and vapor-depositing aluminum onto the packaging film and the mask. After removal of the mask, only a desired antenna structure remains on a section of the packaging film. Then a microchip, is adhesively bonded to the packaging film and conductively connected to an end of the antenna structure, so that data can be written in or read out without contact in a wireless transponder system.
摘要翻译：层叠体由载体层和导电层形成。在一个部分中，导电层形成天线结构。通过将掩模放置在包装膜上并将铝蒸镀在包装膜和掩模上而形成层压体。在去除掩模之后，在包装膜的一部分上仅剩下期望的天线结构。然后将微芯片粘接到包装薄膜上并与天线结构的一端导电连接，从而在无线应答器系统中可以无接触地写入或读出数据。

55. 发明授权

US07208823B2 Semiconductor arrangement comprising transistors based on organic semiconductors and non-volatile read-write memory cells 有权
标题翻译：半导体装置包括基于有机半导体和非易失性读写存储器单元的晶体管
公开(公告)号：US07208823B2
公开(公告)日：2007-04-24
申请号：US10495614
申请日：2002-11-15
申请人： Gunter Schmid , Marcus Halik , Hagen Klauk
发明人： Gunter Schmid , Marcus Halik , Hagen Klauk
IPC分类号： H01L23/02
CPC分类号： H01L27/28 , B82Y10/00 , G11C11/22 , H01L21/31691 , H01L51/0516
摘要： A semiconductor arrangement is disclosed, having transistors based on organic semiconductors and non-volatile read/write memory cells. The invention relates to a semiconductor arrangement, constructed from transistors, in the case of which the semiconductor path is composed of an organic semiconductor, and memory cells based on a ferroelectric effect perferably in a polymer, for use in RF-ID tags, for example.
摘要翻译：公开了具有基于有机半导体和非易失性读/写存储单元的晶体管的半导体装置。本发明涉及一种由晶体管构成的半导体装置，在半导体路径由有机半导体构成的情况下，以及基于聚合物中优先的铁电效应的存储单元，用于例如RF-ID标签。

56. 发明申请

US20120003485A1 Monolayers of organic compounds on metal oxide surfaces or metal surfaces containing oxide and component produced therewith based on organic electronics 审中-公开
标题翻译：在金属氧化物表面上的有机化合物的单层或含有氧化物的金属表面或基于有机电子产生的组分
公开(公告)号：US20120003485A1
公开(公告)日：2012-01-05
申请号：US13138563
申请日：2010-03-03
申请人： Dana Berlinde Habich , Marcus Halik , Oliver Hayden , Günter Schmid
发明人： Dana Berlinde Habich , Marcus Halik , Oliver Hayden , Günter Schmid
IPC分类号： H01L51/50 , B05D5/12 , C23C16/30
CPC分类号： H01L51/5088 , H01L51/0021 , H01L51/5206 , Y10T428/31663
摘要： Monolayers of organic compounds are formed on transparent conductive metal oxide surfaces these are used for example in producing organically based electronic components. By selecting the monolayer, the service life of the devices produced therewith may be improved by orders of magnitude.
摘要翻译：有机化合物的单层形成在透明导电金属氧化物表面上，这些表面用于例如生产有机基电子元件。通过选择单层，可以将其生产的装置的使用寿命提高数量级。

57. 发明申请

US20070267431A1 Device for the Storage of Solid and/or Liquid and/or Gaseous Objects 失效
标题翻译：用于存储固体和/或液体和/或气态物体的装置
公开(公告)号：US20070267431A1
公开(公告)日：2007-11-22
申请号：US10566144
申请日：2004-07-26
申请人： Martin Bergsmann , Aldolf Bernds , Wolfgang Clemens , Axel Gerlt , Marcus Halik , Matthias Muller , Henning Rost , Gunter Schmid , Roland Treutlein
发明人： Martin Bergsmann , Aldolf Bernds , Wolfgang Clemens , Axel Gerlt , Marcus Halik , Matthias Muller , Henning Rost , Gunter Schmid , Roland Treutlein
IPC分类号： B65D75/36
CPC分类号： A61J7/0481 , A61J1/035 , A61J7/0436
摘要： A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment and is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading data memory.
摘要翻译：用于存储固体，液体或气体物体中的至少一种的装置。所述设备包括被配置为包含至少一个对象的至少一个隔间。隔间的灌装或排空触发电可读信号。在一个实施例中，隔室可以被机械地修改，并且基于对隔室的对应的机械改变产生电可读信号。具有至少一个存储单元的电数据存储器集成到该设备中。存储单元被分配给隔室，并被配置为采用对应于隔室的机械变化的值。该装置还包括用于读取数据存储器的分析电路。

58. 发明申请

US20050139822A1 Asymmetrical linear organic oligomers 失效
标题翻译：不对称线性有机低聚物
公开(公告)号：US20050139822A1
公开(公告)日：2005-06-30
申请号：US10984512
申请日：2004-11-09
申请人： Stephan Kirchmeyer , Sergei Ponomarenko , Marcus Halik
发明人： Stephan Kirchmeyer , Sergei Ponomarenko , Marcus Halik
IPC分类号： C07D333/18 , C07B61/00 , C07D409/14 , C07F7/08 , C07F7/18 , C07F9/38 , C07F9/40 , H01L29/786 , H01L51/05 , H01L51/30 , H01L51/40 , H01L29/08 , H01L35/24 , C07F9/02 , C07F5/04
CPC分类号： H01L51/0068 , C07F7/0838 , C07F7/1804 , H01L51/0036 , H01L51/0558
摘要： The invention relates to asymmetrical linear organic oligomers represented by the following formula (I), X—R1—[—Ar—]n—R2 (I) in which n is from 4 to 10, Ar is for example an optionally substituted 2,5-thienylene group, R1 is for example a C10-C20 alkylene group, R2 is for example a C1-C12 alkyl group, and X is for example a vinyl group or an alkoxysilyl group. Also described is a process for the production of such organic oligomers, and semiconductors in electronic modules that include such organic oligomers.
摘要翻译：本发明涉及由下式（I）表示的不对称线性有机低聚物，<？in-line-formula description =“In-line formula”end =“lead”？> XR -Ar - ] n -R 2（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中n Ar为4至10，Ar为例如任选取代的2,5-亚噻吩基，R 1为例如C 10 -C 20烷基，亚烷基，R 2是例如C 1 -C 12烷基，X是例如乙烯基或烷氧基甲硅烷基。还描述了在包括这种有机低聚物的电子模块中制备这种有机低聚物和半导体的方法。

59. 发明申请

US20130146858A1 SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES 审中-公开
公开(公告)号：US20130146858A1
公开(公告)日：2013-06-13
申请号：US13809946
申请日：2011-07-19
申请人： Timo Meyer-Friedrichsen , Knud Reuter , Andreas Elschner , Marcus Halik
发明人： Timo Meyer-Friedrichsen , Knud Reuter , Andreas Elschner , Marcus Halik
IPC分类号： H01L51/00
CPC分类号： H01L51/0074 , C07D495/04 , C07F9/655354 , H01L51/0002 , H01L51/0558 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).

60. 发明授权

US07244803B2 Poly-o-hydroxyamide, polybenzoxazole from the poly-o-hydroxyamide, electronic component including a polybenzoxazole, and processes for producing the same 有权
标题翻译：聚邻羟基酰胺，聚邻羟基酰胺的聚苯并恶唑，包括聚苯并恶唑的电子部件及其制造方法
公开(公告)号：US07244803B2
公开(公告)日：2007-07-17
申请号：US10609453
申请日：2003-06-27
申请人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack , Marcus Halik
发明人： Recai Sezi , Andreas Walter , Anna Maltenberger , Klaus Lowack , Marcus Halik
IPC分类号： C08G63/44 , C08G73/22
CPC分类号： C08G69/265 , C08G69/26 , C08G69/32 , C08G73/22 , Y10T428/31504 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A dielectric for aluminum and copper metalizations is stable at high temperatures. Surprisingly, in spite of the elimination of water during the cyclization, the polymeric dielectrics are very suitable for filling narrow trenches. The filled trenches exhibit no defects and bubbles or cracks. The polybenzoxazoles have dielectric constants of k≦2.7 and are suitable as an electrical insulator. Furthermore, these materials adhere very well on all surfaces relevant for micro-electronics.
摘要翻译：用于铝和铜金属化的电介质在高温下是稳定的。令人惊奇的是，尽管在环化过程中消除了水，但聚合物电介质非常适用于填充窄沟槽。填充的沟槽没有表现出缺陷和气泡或裂缝。聚苯并恶唑的介电常数k <= 2.7，适合作为电绝缘体。此外，这些材料在与微电子相关的所有表面上都很好地粘附。

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