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51. 发明申请

US20110031472A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE 有权
标题翻译：具有高反射OHMIC电极的半导体发光器件
公开(公告)号：US20110031472A1
公开(公告)日：2011-02-10
申请号：US12160040
申请日：2008-03-26
申请人： Yingwen Tang , Li Wang , Fengyi Jiang
发明人： Yingwen Tang , Li Wang , Fengyi Jiang
IPC分类号： H01L33/04
CPC分类号： H01L33/0079 , H01L33/405
摘要： A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.
摘要翻译：半导体发光器件包括导电衬底上的多层半导体结构。多层半导体结构包括位于导电衬底之上的第一掺杂半导体层，位于第一掺杂半导体层之上的第二掺杂半导体层和/或位于第一和第二掺杂半导体层之间的MQW有源层。该器件还包括在第一掺杂半导体层和导电衬底之间的反射欧姆接触金属层，其包括Ag和Ni，Ru，Rh，Pd，Au，Os，Ir和Pt中的至少一种; 加上Zn，Mg Be和Cd中的至少一种; 和多个：W，Cu，Fe，Ti，Ta和Cr。该器件还包括在反射欧姆接触金属层和导电基底之间的结合层，耦合到导电基底的第一电极和耦合到第二掺杂半导体层的第二电极。

52. 发明申请

US20100176404A1 METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS 有权
标题翻译：用于制造大功率发光二极管阵列的方法
公开(公告)号：US20100176404A1
公开(公告)日：2010-07-15
申请号：US12093549
申请日：2008-03-25
申请人： Li Wang , Fengyi Jiang , Yingwen Tang , Junlin Liu
发明人： Li Wang , Fengyi Jiang , Yingwen Tang , Junlin Liu
IPC分类号： H01L33/30
CPC分类号： H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.
摘要翻译：本发明的一个实施例提供一种制造大功率发光二极管（LED）的方法。该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。该方法还包括在生长衬底上的台面上制造基于铟镓铝（InGaAlN）的LED多层结构，其中相应的台面支撑单独的LED结构。此外，该方法包括将多层结构粘合到导电基底上。该方法还包括去除生长底物。此外，该方法包括在InGaAlN多层结构上沉积钝化层和电极层，其中钝化层覆盖槽的侧壁和底部。此外，该方法包括产生耦合预定数量的相邻独立LED的导电路径，从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

53. 发明授权

US08426325B2 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate 有权
标题翻译：用于获得在分隔的基板上制造的半导体器件的高质量边界的方法
公开(公告)号：US08426325B2
公开(公告)日：2013-04-23
申请号：US13177412
申请日：2011-07-06
申请人： Li Wang , Fengyi Jiang
发明人： Li Wang , Fengyi Jiang
IPC分类号： H01L21/306
CPC分类号： H01L33/007 , H01S5/32341 , H01S5/327
摘要： One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure.
摘要翻译：本发明的一个实施例提供了一种用于获得制造在沟槽分隔的衬底上的各个多层结构的高质量边界的方法。在操作期间，该过程接收沟槽分隔的衬底，其中衬底表面被分隔成由沟槽阵列隔开的隔离沉积平台的阵列。然后，该工艺在其中一个沉积平台上形成多层结构，其包括第一掺杂层，有源层和第二掺杂层。接下来，该方法去除多层结构的侧壁。

54. 发明申请

US20110133159A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER 审中-公开
标题翻译：具有P型层中钝化的半导体发光器件
公开(公告)号：US20110133159A1
公开(公告)日：2011-06-09
申请号：US13059400
申请日：2008-08-19
申请人： Fengyi Jiang , Yingwen Tang , Chunlan Mo , Li Wang
发明人： Fengyi Jiang , Yingwen Tang , Chunlan Mo , Li Wang
IPC分类号： H01L33/06 , H01L33/44
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/44
摘要： A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.
摘要翻译：半导体发光器件包括衬底，第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂层之间的多量子阱（MQW）有源层。该器件还包括耦合到第一掺杂半导体层的第一电极，其中部分第一掺杂半导体层被钝化，并且其中第一掺杂半导体层的钝化部分使第一电极与第一掺杂半导体层的边缘基本绝缘层，从而减少表面复合。该器件还包括耦合到第二掺杂半导体层的第二电极和基本上覆盖第一和第二掺杂半导体层，MQW有源层和第二掺杂半导体层的水平表面的一部分的侧壁的钝化层，不被第二电极覆盖。

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