会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 53. 发明申请
    • DYNAMIC BATTERY MANAGEMENT IN AN IMPLANTABLE DEVICE
    • 可移植设备中的动态电池管理
    • US20080097544A1
    • 2008-04-24
    • US11551269
    • 2006-10-20
    • Rajesh Krishan GandhiWilliam J. LinderMichael J. LydenNicholas J. StessmanJonathan H. KellyJames Kalgren
    • Rajesh Krishan GandhiWilliam J. LinderMichael J. LydenNicholas J. StessmanJonathan H. KellyJames Kalgren
    • A61N1/00
    • A61N1/378A61N1/3627A61N1/3708A61N1/3975
    • One aspect of this disclosure relates to a system for dynamic battery management in implantable medical devices. An embodiment of the system includes two or more devices for measuring battery capacity for an implantable medical device battery. The embodiment also includes a controller connected to the measuring devices. The controller is adapted to combine the measurements from the measuring devices using a weighted average to determine battery capacity consumed. According to various embodiments, at least one of the measuring devices includes a coulometer. At least one of the measuring devices includes a capacity-by-voltage device, according to an embodiment. The system further includes a display in communication with the controller in various embodiments. The display is adapted to provide a depiction of battery longevity in units of time remaining in the life of the implantable medical device battery, according to various embodiments. Other aspects and embodiments are provided herein.
    • 本公开的一个方面涉及用于可植入医疗装置中的动态电池管理的系统。 该系统的实施例包括用于测量可植入医疗装置电池的电池容量的两个或更多个装置。 该实施例还包括连接到测量装置的控制器。 控制器适于使用加权平均值来组合来自测量装置的测量值,以确定消耗的电池容量。 根据各种实施例,至少一个测量装置包括电量计。 根据实施例,至少一个测量装置包括逐个电容装置。 该系统还包括在各种实施例中与控制器通信的显示器。 根据各种实施例,该显示器适于以可植入医疗装置电池的寿命中剩余的时间单位提供电池寿命的描绘。 本文提供了其它方面和实施例。
    • 57. 发明授权
    • Shielded integrated circuit capacitor connected to a lateral transistor
    • 屏蔽集成电路电容器
    • US06198123B1
    • 2001-03-06
    • US08924456
    • 1997-08-29
    • William J. LinderRobert S. Harguth
    • William J. LinderRobert S. Harguth
    • H01G428
    • H01L28/40
    • An integrated circuit (IC) capacitor offers reduced sensitivity to parasitic capacitance, reduced-size, and increased noise immunity, such as for use in digital-to-analog converters (DACs), analog-to-digital converters (ADCs), switched-capacitor filters, and other IC circuits. The capacitor includes a first polysilicon layer, a superjacent second polysilicon layer separated from the first polysilicon layer by an insulator, and an overlying metal layer separated from the second polysilicon layer by an insulator. The metal layer provides a shield that is connected to a known voltage, or to the first polysilicon layer. When connected to the first polysilicon layer, the overlying metal layer also provides additional parallel capacitance, thereby reducing the integrated circuit area of the capacitor. In one example, the overlying metal layer is a second metal layer that is also used, together with a first metal layer, for interconnecting IC components.
    • 集成电路(IC)电容器对寄生电容的灵敏度降低,尺寸减小,抗噪声能力增强,例如用于数/模转换器(DAC),模/数转换器(ADC) 电容滤波器和其他IC电路。 电容器包括第一多晶硅层,通过绝缘体与第一多晶硅层分离的相邻的第二多晶硅层,以及通过绝缘体与第二多晶硅层分离的上覆金属层。 金属层提供连接到已知电压的屏蔽,或者连接到第一多晶硅层。 当连接到第一多晶硅层时,上覆金属层还提供额外的并联电容,从而减小电容器的集成电路面积。 在一个示例中,上覆金属层是第二金属层,其也与第一金属层一起用于互连IC部件。
    • 59. 发明授权
    • Linear amplifier
    • 线性放大器
    • US5699014A
    • 1997-12-16
    • US627403
    • 1996-04-04
    • Paul A. HaefnerWilliam J. Linder
    • Paul A. HaefnerWilliam J. Linder
    • H03F1/32H03F3/45
    • H03F1/3211H03F1/3205H03F2200/162H03F2200/372
    • A low-noise, low-power complementary metal-oxide-semiconductor (CMOS) integrated circuit common source differential amplifier is disclosed which is capable of amplifying low amplitude cardiac signals such as those produced by atrial depolarization of the heart. The amplifier has a pair of large area p-channel input field-effect transistors (FETs) biased in weak inversion. The amplifier also has active load FETs biased in the nonsaturation (linear) region by means of a varying gate terminal voltage applied by a dynamic bias circuit. The gate terminal voltage is varied to match the temperature dependence of the output conductance of the load FETs to the temperature dependence of the transconductance of the input FETs. The gate terminal voltage also sets a dc bias point which uses the nonlinearity in the load FET output conductance to cancel nonlinearity in the input FET transconductance.
    • 公开了一种低噪声,低功率互补金属氧化物半导体(CMOS)集成电路公共源差分放大器,其能够放大低振幅心脏信号,例如通过心脏去极化产生的心脏信号。 放大器具有一对在弱反相中偏置的大面积p沟道输入场效应晶体管(FET)。 放大器还通过由动态偏置电路施加的变化的栅极端子电压而在非饱和(线性)区域中偏置有有源负载FET。 栅极端子电压变化以匹配负载FET的输出电导的温度依赖性与输入FET的跨导的温度依赖性。 栅极端子电压还设置直流偏置点,其使用负载FET输出电导中的非线性来消除输入FET跨导中的非线性。