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51. 发明授权

US07566921B2 Silicon germanium emitter 有权
标题翻译：硅锗发射极
公开(公告)号：US07566921B2
公开(公告)日：2009-07-28
申请号：US11838941
申请日：2007-08-15
申请人： Francois Pagette
发明人： Francois Pagette
IPC分类号： H01L29/40
CPC分类号： H01L29/7378 , H01L29/66318
摘要： Disclosed are an improved hetero-junction bipolar transistor (HBT) structure and a method of forming the structure that incorporates a silicon-germanium emitter layer with a graded germanium profile. The graded germanium concentration creates a quasi-drift field in the neutral region of the emitter layer. This quasi-drift field induces valence bandgap grading within the emitter layer so as to accelerate movement of holes from the base layer through the emitter layer. Accelerated movement of the holes from the base layer through the emitter layer reduces emitter delay time and thereby, increases the cut-off frequency (fT) and the maximum oscillation frequency (fMAX) of the resultant HBT.
摘要翻译：公开了一种改进的异质结双极晶体管（HBT）结构和形成具有分级锗型材的硅 - 锗发射极层的结构的方法。分级锗浓度在发射极层的中性区域产生准漂移场。该准漂移场引发发射极层内的价带隙分级，以加速空穴从基极层通过发射极层的移动。通过发射极层从基极层的加速移动减少发射极延迟时间，从而增加所得HBT的截止频率（fT）和最大振荡频率（fMAX）。

52. 发明授权

US07087940B2 Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer 有权
标题翻译：使用自对准蚀刻停止层形成具有自对准凸起外部基极的双极晶体管的结构和方法
公开(公告)号：US07087940B2
公开(公告)日：2006-08-08
申请号：US10709220
申请日：2004-04-22
申请人： Marwan H. Khater , Francois Pagette
发明人： Marwan H. Khater , Francois Pagette
IPC分类号： H01L31/072 , H01L21/331
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/41708 , H01L29/42304 , H01L29/7378
摘要： A bipolar transistor structure and method of making the bipolar transistor are provided. The bipolar transistor includes a collector region, an intrinsic base layer overlying the collector region, and an emitter overlying the intrinsic base layer. An opened etch stop layer includes a layer of dielectric material overlying the intrinsic base, the opened etch stop layer self-aligned to the emitter. The bipolar transistor further includes a raised extrinsic base self-aligned to the emitter, the raised extrinsic base overlying the intrinsic base layer.
摘要翻译：提供双极晶体管结构和制造双极晶体管的方法。双极晶体管包括集电极区域，覆盖集电极区域的本征基极层和覆盖本征基极层的发射极。开放的蚀刻停止层包括覆盖本征基底的介电材料层，该开放的蚀刻停止层与发射极自对准。双极晶体管还包括与发射极自对准的升高的外部基极，凸起的外在基极覆盖本征基极层。

53. 发明授权

US06960820B2 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same 有权
标题翻译：双极晶体管自对准具有凸起的外在基极延伸及其形成方法
公开(公告)号：US06960820B2
公开(公告)日：2005-11-01
申请号：US10604212
申请日：2003-07-01
申请人： Gregory G. Freeman , Marwan H. Khater , Francois Pagette
发明人： Gregory G. Freeman , Marwan H. Khater , Francois Pagette
IPC分类号： H01L29/737 , H01L21/331 , H01L21/8222 , H01L29/10 , H01L29/732 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/732
摘要： A self-aligned bipolar transistor structure having a raised extrinsic base comprising an outer region and an inner region of different doping concentrations and methods of fabricating the transistor are disclosed. More specifically, the self-alignment of the extrinsic base to the emitter is accomplished by forming the extrinsic base in two regions. First, a first material of silicon or polysilicon having a first doping concentration is provided to form an outer extrinsic base region. Then a first opening is formed in the first material layer by lithography within which a dummy emitter pedestal is formed, which results in forming a trench between the sidewall of the first opening and the dummy pedestal. A second material of a second doping concentration is then provided inside the trench forming a distinct inner extrinsic base extension region to self-align the raised extrinsic base edge to the dummy pedestal edge. Since the emitter is formed where the dummy pedestal existed, the extrinsic base is also self-aligned to the emitter. The silicon or polysilicon forming the inner extrinsic base extension region can also be grown in the trench with selective or non-selective epitaxy.
摘要翻译：公开了具有包括外部区域和不同掺杂浓度的内部区域的升高的外部基极的自对准双极晶体管结构和制造晶体管的方法。更具体地说，外部碱基与发射体的自对准是通过在两个区域中形成外部碱基来实现的。首先，提供具有第一掺杂浓度的硅或多晶硅的第一材料以形成外部外在基极区域。然后通过光刻形成在第一材料层中的第一开口，在该第一材料层内形成有虚拟发射极基座，这导致在第一开口的侧壁和虚拟基座之间形成沟槽。然后在沟槽内部设置第二掺杂浓度的第二材料，形成不同的内部非本征基本延伸区域，以将凸起的本征基底边缘自对准到虚拟基座边缘。由于发射极形成在存在虚拟基座的位置，所以外部基极也与发射极自对准。形成内部非本征基极延伸区域的硅或多晶硅也可以在具有选择性或非选择性外延的沟槽中生长。

54. 发明申请

US20050236645A1 STRUCTURE AND METHOD OF FORMING BIPOLAR TRANSISTOR HAVING A SELF-ALIGNED RAISED EXTRINSIC BASE USING SELF-ALIGNED ETCH STOP LAYER 有权
标题翻译：使用自对准蚀刻停止层形成具有自对准基极化基底的双极晶体管的结构和方法
公开(公告)号：US20050236645A1
公开(公告)日：2005-10-27
申请号：US10709220
申请日：2004-04-22
申请人： Marwan Khater , Francois Pagette
发明人： Marwan Khater , Francois Pagette
IPC分类号： H01L21/331 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/732 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/41708 , H01L29/42304 , H01L29/7378
摘要： A bipolar transistor structure and method of making the bipolar transistor are provided. The bipolar transistor includes a collector region, an intrinsic base layer overlying the collector region, and an emitter overlying the intrinsic base layer. An opened etch stop layer includes a layer of dielectric material overlying the intrinsic base, the opened etch stop layer self-aligned to the emitter. The bipolar transistor further includes a raised extrinsic base self-aligned to the emitter, the raised extrinsic base overlying the intrinsic base layer.
摘要翻译：提供双极晶体管结构和制造双极晶体管的方法。双极晶体管包括集电极区域，覆盖集电极区域的本征基极层和覆盖本征基极层的发射极。开放的蚀刻停止层包括覆盖本征基底的介电材料层，该开放的蚀刻停止层与发射极自对准。双极晶体管还包括与发射极自对准的升高的外部基极，凸起的外在基极覆盖本征基极层。

55. 发明申请

US20050012180A1 BIPOLAR TRANSISTOR SELF-ALIGNMENT WITH RAISED EXTRINSIC BASE EXTENSION AND METHODS OF FORMING SAME 有权
标题翻译：具有增强的极限基底延伸的双极晶体管自对准及其形成方法
公开(公告)号：US20050012180A1
公开(公告)日：2005-01-20
申请号：US10604212
申请日：2003-07-01
申请人： Gregory Freeman , Marwan Khater , Francois Pagette
发明人： Gregory Freeman , Marwan Khater , Francois Pagette
IPC分类号： H01L29/737 , H01L21/331 , H01L21/8222 , H01L29/10 , H01L29/732 , H01L21/8249
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/732
摘要： A self-aligned bipolar transistor structure having a raised extrinsic base comprising an outer region and an inner region of different doping concentrations and methods of fabricating the transistor are disclosed. More specifically, the self-alignment of the extrinsic base to the emitter is accomplished by forming the extrinsic base in two regions. First, a first material of silicon or polysilicon having a first doping concentration is provided to form an outer extrinsic base region. Then a first opening is formed in the first material layer by lithography within which a dummy emitter pedestal is formed, which results in forming a trench between the sidewall of the first opening and the dummy pedestal. A second material of a second doping concentration is then provided inside the trench forming a distinct inner extrinsic base extension region to self-align the raised extrinsic base edge to the dummy pedestal edge. Since the emitter is formed where the dummy pedestal existed, the extrinsic base is also self-aligned to the emitter. The silicon or polysilicon forming the inner extrinsic base extension region can also be grown in the trench with selective or non-selective epitaxy.
摘要翻译：公开了具有包括外部区域和不同掺杂浓度的内部区域的升高的外部基极的自对准双极晶体管结构和制造晶体管的方法。更具体地说，外部碱基与发射体的自对准是通过在两个区域中形成外部碱基来实现的。首先，提供具有第一掺杂浓度的硅或多晶硅的第一材料以形成外部外在基极区域。然后通过光刻形成在第一材料层中的第一开口，在该第一材料层内形成有虚拟发射极基座，这导致在第一开口的侧壁和虚拟基座之间形成沟槽。然后在沟槽的内部提供第二掺杂浓度的第二材料，形成不同的内部非本征基本延伸区域，以将凸起的本征基底边缘自对准到虚拟基座边缘。由于发射极形成在存在虚拟基座的位置，所以外部基极也与发射极自对准。形成内部非本征基极延伸区域的硅或多晶硅也可以在具有选择性或非选择性外延的沟槽中生长。

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