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51. 发明申请

US20090135529A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090135529A1
公开(公告)日：2009-05-28
申请号：US11946358
申请日：2007-11-28
申请人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
发明人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/30
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction. The magneto-resistive effect unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them. The first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magneto-resistive effect changes so that much higher reliability is achievable.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及第一屏蔽层和第二屏蔽层，其位于和形成为使得磁阻效应单元夹在它们之间，具有沿层叠方向施加的感测电流。磁阻效应单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层介于它们之间。第一屏蔽层和第二屏蔽层由磁化方向控制装置在磁化方向上控制，并且第一铁磁层和第二铁磁层接收到产生反平行磁化状态的动作，其中相互磁化在第一屏蔽层和第二屏蔽层的磁作用的影响下处于相反方向。因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求记录密度此外，可以获得稳定的磁阻效应变化，从而可实现更高的可靠性。

52. 发明申请

US20090002897A1 CPP-GMR DEVICE AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP-GMR设备和磁盘系统
公开(公告)号：US20090002897A1
公开(公告)日：2009-01-01
申请号：US11768625
申请日：2007-06-26
申请人： Takahiko Machita , Daisuke Miyauchi
发明人： Takahiko Machita , Daisuke Miyauchi
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a multilayer device assembly comprising a fixed magnetization layer, a spacer layer, a free layer and a cap layer stacked one upon another in order, with a sense current applied in a stacking direction of the multilayer device assembly. In the rear of the multilayer device assembly, there is a refilled insulation layer formed, which is in contact with the rear end face of the multilayer device assembly and extends rearward, wherein the uppermost position P of the refilled insulation layer that is in contact with the rear end face of said multilayer device assembly lies at a rear end face of the cap layer and is set in such a way as to satisfy a relation: 0.2≦(T2/T1)
摘要翻译：本发明提供一种具有CPP（电流垂直于平面）结构的巨型磁阻效应器件（CPP-GMR器件），其包括多层器件组件，该多层器件组件包括固定的磁化层，间隔层，自由层和层叠的一个在另一个顺序上，具有施加在多层器件组件的堆叠方向上的感测电流。在多层器件组件的后部，形成有与多层器件组件的后端面接触并且向后延伸的再填充绝缘层，其中再填充绝缘层的最上位置P与所述多层器件组件的后端面位于盖层的后端面，并且设置成满足以下关系：0.2 <=（T2 / T1）<1其中T1是盖的厚度层，T2是从厚度方向观察时的盖层的最上部到位置P的距离的绝对值。因此，本发明可以提供一种CPP-GMR器件，其具有低面积电阻率AR区域的MR变化率的进一步改善，并且以高可靠性提高了磁场的耐受性，从而使新一代可以实际上实现具有超过400Gbpsi的记录密度的头。

53. 发明申请

US20080013223A1 GMR DEVICE OF THE CPP STRUCTURE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译： CPP结构的GMR装置，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080013223A1
公开(公告)日：2008-01-17
申请号：US11773651
申请日：2007-07-05
申请人： Daisuke Miyauchi , Takahiko Machita
发明人： Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： G11B5/39
摘要： In the GMR device of the CPP structure using the synthetic pinned layer as the fixed magnetization layer (pinned layer), the width W1 of the inner pin layer is set at 50 nm or less; the fixed magnetization layer is configured in such a way as to have a given angle range of tapers at both its ends as viewed from the medium opposite plane; the magnetic volume ratio between the inner and the outer pin layer is allowed to lie in the range of 0.9 to 1.1; and the magnetic thickness ratio between the inner and the outer pin layer is set at 0.8 or less. It is thus possible to make the outer pin layer thin at no cost of the thickness of the inner pin layer forming a part of the synthetic pinned layer yet without doing damage to the function of the synthetic pinned layer itself, viz., resistance to an external magnetic field.
摘要翻译：在使用合成钉扎层作为固定磁化层（钉扎层）的CPP结构的GMR装置中，内销层的宽度W 1设定在50nm以下; 固定磁化层被构造成当从介质相对平面观察时，其两端的锥度具有给定的角度范围; 允许内销层和外销层之间的磁体积比在0.9至1.1的范围内; 并且内销层和外销层之间的磁性厚度比设定为0.8以下。因此，可以使外部针层的厚度成为薄片，而不会损害构成合成钉扎层的一部分的内部针层的厚度，而不损害合成被钉扎层本身的功能，即抵抗外部磁场。

54. 发明申请

US20070242396A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 失效
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070242396A1
公开(公告)日：2007-10-18
申请号：US11715341
申请日：2007-03-08
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
摘要翻译：在MR元件中，被钉扎层和自由层中的每一个包括Heusler合金层。 Heusler合金层具有两个形状为四边形并面向相反方向的表面。 Heusler合金层包括接触两个表面之一的四个侧面的一个晶粒。在制造MR元件的方法中，形成并构图成为MR元件的层状膜，然后对图案化的层叠膜进行热处理，使得包含在作为Heusler合金层的膜中的晶粒在从而形成层状膜生长，并且形成一个接触作为Heusler合金层的膜的一个表面的四面的晶粒。

55. 发明授权

US08256096B2 Method of using xenon ion beams to improve track width definition 有权
标题翻译：使用氙离子束改善轨道宽度定义的方法
公开(公告)号：US08256096B2
公开(公告)日：2012-09-04
申请号：US11975265
申请日：2007-10-18
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC分类号： G11B5/127 , C23F1/04
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
摘要翻译：将氙离子束与合适的掩模一起使用，将堆叠物离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有侧壁的基座包括垂直部分和缩短的锥形部分，已经形成。随后根据需要形成导电引线层。使用氙气作为溅射气体，可以更精确地控制铣削终止点。

56. 发明申请

US20120087046A1 THIN FILM MAGNETIC HEAD INCLUDING SOFT LAYER MAGNETICALLY CONNECTED WITH SHIELD 有权
标题翻译：薄膜磁头包括与屏蔽电磁连接的软层
公开(公告)号：US20120087046A1
公开(公告)日：2012-04-12
申请号：US12900879
申请日：2010-10-08
申请人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
发明人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
IPC分类号： G11B5/127 , G11B21/24 , G11B5/48
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.
摘要翻译：薄膜磁头包括：电阻效应膜，其电阻根据外部磁场而变化; 一对屏蔽，以与MR膜的膜表面正交的方向夹持MR膜的方式设置在两侧; 各向异性提供层，其向所述一对屏蔽件的第一屏蔽提供交换各向异性，以便在所需方向上磁化所述第一屏蔽，并且相对于所述第一屏蔽设置在与所述MR膜相反的一侧上; 以及侧面屏蔽，其设置在MR膜的轨道宽度方向的两侧，并且包括与第一屏蔽件磁性连接的软磁性层。

57. 发明授权

US08149546B2 Magnetic field detecting element including tri-layer stack with stepped portion 有权
标题翻译：磁场检测元件包括具有阶梯部分的三层叠层
公开(公告)号：US08149546B2
公开(公告)日：2012-04-03
申请号：US11925030
申请日：2007-10-26
申请人： Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa , Takahiko Machita
发明人： Toshiyuki Ayukawa , Daisuke Miyauchi , Koji Shimazawa , Takahiko Machita
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic layers changes in accordance with an external magnetic field; upper and lower shield electrode layers sandwiching the stack in a direction of stacking, wherein the upper and lower shield electrode layers supply sense current in the direction of stacking, and magnetically shield the stack; a bias magnetic layer provided on a surface of the stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface; and insulating layers provided on both sides of the stack in a track width direction thereof, wherein the stack has a stepped portion formed at the non-magnetic intermediate layer.
摘要翻译：磁场检测元件包括包括上下磁性层的堆叠和夹在其间的非磁性中间层，其中磁性层的磁化根据外部磁场而变化; 上下屏蔽电极层沿层叠方向夹着堆叠，其中上下屏蔽电极层在堆叠方向上提供感测电流，并对堆叠进行磁屏蔽; 偏置磁性层，其设置在与空气轴承表面相对的所述堆叠的表面上，并且其中所述偏置磁性层在垂直于所述空气轴承表面的方向上向所述上部和下部磁性层施加偏置磁场; 以及设置在堆叠的轨道宽度方向两侧的绝缘层，其中堆叠具有形成在非磁性中间层的台阶部分。

58. 发明授权

US08094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system 有权
标题翻译： CCP的磁阻器件（电流垂直于平面）型，具有单域控制磁化，以及相关的磁盘系统
公开(公告)号：US08094420B2
公开(公告)日：2012-01-10
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.
摘要翻译：本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。磁阻单元包括夹在铁磁层之间的非磁性中间层。平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

59. 发明授权

US08023230B2 Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 有权
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对铁磁层
公开(公告)号：US08023230B2
公开(公告)日：2011-09-20
申请号：US12289401
申请日：2008-10-27
申请人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
发明人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.
摘要翻译：磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。两个磁通导向层中的每一个具有前端面和后端面。偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

60. 发明授权

US07974048B2 Magneto-resistive effect device of CPP type having shield layers coupled with ferromagnetic layers 有权
标题翻译：具有与铁磁层耦合的屏蔽层的CPP型磁阻效应器件
公开(公告)号：US07974048B2
公开(公告)日：2011-07-05
申请号：US11946358
申请日：2007-11-28
申请人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
发明人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/30
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, having a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction.
摘要翻译：本发明提供了一种具有磁阻效应单元的CPP（垂直于平面电流）结构的磁阻效应器件，以及位于和形成为使得磁阻效应单元是第一屏蔽层和第二屏蔽层的第一屏蔽层和第二屏蔽层夹在它们之间，具有沿层叠方向施加的感测电流。

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