专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20060128049A1 DEVICES HAVING VERTICALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 有权
标题翻译：具有垂直处理的纳米制品的装置及其制造方法
公开(公告)号：US20060128049A1
公开(公告)日：2006-06-15
申请号：US11158217
申请日：2005-06-21
申请人： Venkatachalam Jaiprakash , Jonathan Ward , Thomas Rueckes , Brent Segal
发明人： Venkatachalam Jaiprakash , Jonathan Ward , Thomas Rueckes , Brent Segal
IPC分类号： H01L21/00
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C13/0033 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/943
摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.
摘要翻译：描述了使用垂直布置的纳米制品的机电开关和存储单元及其制造方法。机电装置包括具有主要水平表面和形成在其中的通道的结构。通道中有导电迹线; 以及垂直悬挂在所述通道中的与所述通道的垂直壁成间隔开的纳米管制品。该物品在水平方向上可电导向导电迹线偏转。在某些实施方案中，纳米管制品的垂直悬浮程度由薄膜工艺限定。在某些实施方案中，纳米管制品的垂直悬浮程度为约50纳米或更小。在某些实施例中，纳米管制品被夹持在布置在纳米管制品的一些纳米管之间的多孔空间中的导电材料上。在某些实施方案中，纳米管制品由多孔纳米纤维形成。在某些实施例中，取决于器件结构，纳米管制品在机电上可偏转成与导电迹线接触，并且触点是易失性状态或非易失性状态。在某些实施例中，垂直取向的装置被布置成各种形式的三轨迹装置。在某些实施例中，信道可以用于多个独立设备，或者可以用于共享公共电极的设备。

52. 发明申请

US20050269554A1 Applicator liquid containing ethyl lactate for preparation of nanotube films 有权
标题翻译：包含乳酸乙酯用于制备纳米管膜的涂布液
公开(公告)号：US20050269554A1
公开(公告)日：2005-12-08
申请号：US10860433
申请日：2004-06-03
申请人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent Segal
发明人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent Segal
IPC分类号： H01B1/00 , H01B1/24
CPC分类号： H01B1/24 , B82Y10/00 , B82Y30/00 , C08K5/101 , Y10S977/742 , Y10S977/753 , Y10S977/845 , Y10T428/29
摘要： Certain applicator liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in ethyl lactate. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.
摘要翻译：描述了一些施用器液体和应用技术，其可用于形成具有受控特性的纳米管膜或织物。用于制备纳米管膜或织物的涂布液包括分散在乳酸乙酯中的受控浓度的纳米管。受控浓度足以形成预选密度和均匀性的纳米管织物或薄膜。

53. 发明申请

US20050269553A1 Spin-coatable liquid for use in electronic fabrication processes 有权
标题翻译：用于电子制造工艺的可旋涂液体
公开(公告)号：US20050269553A1
公开(公告)日：2005-12-08
申请号：US10860432
申请日：2004-06-03
申请人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent Segal
发明人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent Segal
IPC分类号： H01C1/00 , H01C17/065 , H01L51/00 , H01L51/30 , H01L51/40
CPC分类号： B82Y10/00 , H01C17/0652 , H01L51/0003 , H01L51/0025 , H01L51/0048 , Y10S977/742 , Y10S977/743 , Y10S977/753 , Y10T428/29 , Y10T428/2982 , Y10T428/30
摘要： Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid containing nanotubes for use in an electronics fabrication process includes a solvent containing a plurality of nanotubes. The nanotubes are at a concentration of greater than 1 mg/L. The nanotubes are pretreated to reduce the level of metallic and particulate impurities to a preselected level, and the preselected metal and particulate impurities levels are selected to be compatible with an electronics manufacturing process. The solvent also is selected for compatibility with an electronics manufacturing process.
摘要翻译：描述了一些可旋涂的液体和应用技术，其可以用于形成纳米管膜或受控特性的织物。包含用于电子制造工艺的纳米管的可旋涂的液体包括含有多个纳米管的溶剂。纳米管的浓度大于1mg / L。预处理纳米管以将金属和颗粒杂质的水平降低到预选的水平，并且预选的金属和微粒杂质水平被选择为与电子制造工艺兼容。溶剂也被选择用于与电子制造工艺的兼容性。

54. 发明申请

US20050058590A1 Spin-coatable liquid for formation of high purity nanotube films 有权
标题翻译：用于形成高纯度纳米管膜的可旋涂液体
公开(公告)号：US20050058590A1
公开(公告)日：2005-03-17
申请号：US10860334
申请日：2004-06-03
申请人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent Segal
发明人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent Segal
IPC分类号： C01B31/02 , C08G63/48 , C08L67/00 , C09C1/56 , C09D7/12 , D01F9/12 , H01L51/00 , H01L51/30
CPC分类号： C09C1/56 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/152 , C01B32/168 , C01B32/17 , C01B2202/02 , C01P2004/03 , C01P2004/13 , C01P2006/40 , C01P2006/80 , C08K3/04 , C09C1/48 , C09D7/70 , H01L51/0048 , H01L51/0052 , Y10S977/742 , Y10S977/75 , Y10S977/752 , Y10S977/755 , Y10S977/764 , Y10S977/778 , Y10S977/786 , Y10T428/29 , Y10T428/2982
摘要： Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.
摘要翻译：描述了一些可旋涂的液体和应用技术，其可以用于形成纳米管膜或受控特性的织物。用于形成纳米管膜的可旋涂液体包括含有受控浓度的纯化纳米管的液体介质，其中所述受控浓度足以形成预定浓度和均匀性的纳米管织物或膜，并且其中所述可旋涂液体包含小于1×10 18原子/ cm 3的金属杂质。可旋涂的液体基本上不含直径大于约500nm的颗粒杂质。

55. 发明申请

US20060250856A1 Memory arrays using nanotube articles with reprogrammable resistance 有权
公开(公告)号：US20060250856A1
公开(公告)日：2006-11-09
申请号：US11274967
申请日：2005-11-15
申请人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Huang
发明人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Huang
IPC分类号： G11C7/10
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C2213/16 , G11C2213/19 , G11C2213/35 , G11C2213/79
摘要： A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

56. 发明申请

US20060237857A1 Hybrid carbon nanotube FET(CNFET)-FET static RAM (SRAM) and method of making same 有权
标题翻译：混合碳纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US20060237857A1
公开(公告)日：2006-10-26
申请号：US11332080
申请日：2006-01-13
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L27/11
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

57. 发明申请

US20050059176A1 Process for making byte erasable devices having elements made with nanotubes 失效
标题翻译：用于制造具有由纳米管制成的元件的字节可擦除器件的过程
公开(公告)号：US20050059176A1
公开(公告)日：2005-03-17
申请号：US10824678
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C23/00 , H01L51/00 , H01L21/00
CPC分类号： H01L51/0048 , B82Y10/00 , G11C13/025 , G11C23/00 , Y10S977/943
摘要： A method of making byte erasable devices having elements made with nanotubes. Under one aspect of the invention, a device is made having nanotube memory elements. A structure is provided having a plurality of transistors, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. For a predefined set of transistors, a corresponding trench is formed between gates of adjacent transistors. For each trench, a defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in each trench. Each defined pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a transistor. An electrical communication path is provided electrically connecting each electrode so that all electrodes may electro-statically attract a corresponding defined pattern of nanotube fabric away from a transistor and toward the electrode.
摘要翻译：一种制造具有由纳米管制成的元件的字节可擦除器件的方法。在本发明的一个方面，制造具有纳米管存储元件的装置。提供了具有多个晶体管的结构，每个具有漏极和源极之间的沟道区域，每个晶体管还包括位于所述沟道上的栅极。对于预定义的一组晶体管，在相邻晶体管的栅极之间形成相应的沟槽。对于每个沟槽，在结构的至少水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在每个沟槽中设置电极。每个限定的纳米管织物图案被悬挂，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的关系中，并且定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与漏斗之一电连通和晶体管的源极。电气连接路径被电连接每个电极，使得所有电极可以静电吸引相应的限定图案的纳米管织物远离晶体管并朝向电极。

58. 发明申请

US20060183278A1 Field effect device having a channel of nanofabric and methods of making same 有权
公开(公告)号：US20060183278A1
公开(公告)日：2006-08-17
申请号：US11332529
申请日：2006-01-13
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L21/8234 , H01L29/76
CPC分类号： B82Y10/00 , H01L21/823807 , H01L51/0048 , H01L51/0052 , H01L51/0508 , H01L51/0541
摘要： Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.

59. 发明申请

US20050237781A1 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
标题翻译：非易失性机电场效应器件和使用其的电路及其形成方法
公开(公告)号：US20050237781A1
公开(公告)日：2005-10-27
申请号：US10967858
申请日：2004-10-18
申请人： Claude Bertin , Thomas Rueckes , John Berg
发明人： Claude Bertin , Thomas Rueckes , John Berg
IPC分类号： G11C13/02 , G11C16/04
CPC分类号： B82Y10/00 , G11C8/10 , G11C11/412 , G11C11/54 , G11C13/025 , G11C16/0416 , G11C23/00 , H01L27/115 , Y10S977/733
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal. Under one embodiment, one of the two control terminals has a dielectric surface for contact with the nanotube switching element when creating a non-volatile open state. Under one embodiment, the source, drain and gate may be stimulated at any voltage level from ground to supply voltage, and wherein the two control terminals are stimulated at any voltage level from ground to a switching threshold voltage larger in magnitude than the supply voltage. Under one embodiment, the nanotube switching element includes an article made from nanofabric that is positioned between the two control terminals. Under one embodiment, one of the two control terminals is a release electrode for electrostatically pulling the nanotube article out of contact with the one of the source, drain and gate so as to form a non-volatile open state. Under one embodiment, the other of the two control terminals is a set electrode for electrostatically pulling the nanotube article into contact with the one of the source, drain and gate so as to form a non-volatile closed state.
摘要翻译：非易失性场效应器件和使用它的电路。非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。源极，漏极和栅极中的每一个都具有相应的端子。电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。源极，漏极和栅极中的其他物体直接连接到其相应的端子。纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。在一个实施例中，当创建非易失性打开状态时，两个控制端中的一个具有用于与纳米管开关元件接触的电介质表面。在一个实施例中，源极，漏极和栅极可以在从地面到电源电压的任何电压电平下被激励，并且其中两个控制端子被激励在从接地到比电源电压更大幅度的开关阈值电压的任何电压电平。在一个实施例中，纳米管开关元件包括由纳米制成的制品，其位于两个控制端子之间。在一个实施例中，两个控制端子中的一个是用于静电拉伸纳米管制品的释放电极，与源极，漏极和栅极之一不接触，以形成非易失性的打开状态。在一个实施例中，两个控制端子中的另一个是用于静电拉动纳米管制品与源极，漏极和栅极之一接触的设置电极，以便形成非易失性闭合状态。

60. 发明申请

US20050059210A1 Process for making bit selectable devices having elements made with nanotubes 有权
标题翻译：用于制造具有由纳米管制成的元件的位选择器件的工艺
公开(公告)号：US20050059210A1
公开(公告)日：2005-03-17
申请号：US10824706
申请日：2004-04-15
申请人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
发明人： Thomas Rueckes , Venkatachalam Jaiprakash , Claude Bertin
IPC分类号： G11C13/02 , G11C23/00 , H01L27/28 , H01L51/00 , H01L51/30 , H01L21/82 , H01L21/336
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L27/28 , H01L51/0048 , H01L51/0052
摘要： A method is used to make a bit selectable device having nanotube memory elements. A structure having at least two transistors is provided, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. A trench is formed between one of the source and drain of a first transistor and one of the source and drain of a second transistor. An electrical communication path is formed in the trench between one of the source and drain of a first transistor and one of the source and drain of a second transistor. A defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in the trench. A pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a first transistor and one of the source and drain of a second transistor.
摘要翻译：一种方法用于制造具有纳米管存储元件的位选择器件。提供了具有至少两个晶体管的结构，每个具有漏极和源极之间具有限定的沟道区域，每个晶体管还包括位于所述沟道上的栅极。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极之一之间形成沟槽。在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极中的一个之间的沟槽中形成电连通路径。在结构的至少一个水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。在沟槽中设置电极。纳米管织物的图案被悬浮，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的位置上，并且被定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与排水管之一电连通第一晶体管的源极和第二晶体管的源极和漏极之一。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式