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51. 发明授权

US07902579B2 Magnetic memory devices using magnetic domain dragging 有权
标题翻译：使用磁畴拖曳的磁存储器件
公开(公告)号：US07902579B2
公开(公告)日：2011-03-08
申请号：US11505969
申请日：2006-08-18
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
IPC分类号： G11C11/02
CPC分类号： G11C11/15 , G11C11/5607 , G11C19/0808 , H01L27/228
摘要： A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.
摘要翻译：磁存储器件包括存储区域，输入端和传感器。存储区包括自由层，钉扎层和非磁性层。自由层具有相邻扇区和磁畴壁。被钉扎层对应于扇区并且具有固定的磁化方向。非磁性层形成在自由层和被钉扎层之间。存储区域包括用于停止形成在扇区的每个边界处的磁畴壁的磁畴壁塞。输入电连接到自由层的一端，用于输入用于磁畴拖动的信号。传感器测量流过存储器区域的电流。

52. 发明授权

US07751224B2 Data writing and reading method for memory device employing magnetic domain wall movement 失效
标题翻译：采用磁畴壁运动的存储器件的数据写入和读取方法
公开(公告)号：US07751224B2
公开(公告)日：2010-07-06
申请号：US11750376
申请日：2007-05-18
申请人： Chee-kheng Lim , Eun-sik Kim
发明人： Chee-kheng Lim , Eun-sik Kim
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , B82Y25/00 , G11C11/14 , H01F10/14 , H01F10/16 , H01F10/3222 , Y10S977/933
摘要： A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.
摘要翻译：一种采用磁畴壁运动的存储器件的数据记录和读取方法。存储器件包括写入磁道，形成在写入磁道上的互连层，以及形成在互连层上的记录磁道。

53. 发明授权

US07710756B2 Semiconductor device using magnetic domain wall moving 有权
标题翻译：半导体器件采用磁畴壁移动
公开(公告)号：US07710756B2
公开(公告)日：2010-05-04
申请号：US11655927
申请日：2007-01-22
申请人： Chee-kheng Lim , Yong-su Kim
发明人： Chee-kheng Lim , Yong-su Kim
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C19/0841 , Y10S977/933
摘要： A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.
摘要翻译：半导体器件包括具有多个磁畴的磁线，其中，所述磁线包括通过脉冲场或脉冲电流移动的磁畴壁。半导体器件的磁线不需要额外的凹口，因为磁线包括磁畴壁，其移动距离由脉冲场或脉冲电流控制。

54. 发明授权

US07684233B2 Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same 有权
标题翻译：使用自旋极化电流的多位磁存储器件及其制造和操作方法
公开(公告)号：US07684233B2
公开(公告)日：2010-03-23
申请号：US11347228
申请日：2006-02-06
申请人： Chee-kheng Lim , Yong-su Kim
发明人： Chee-kheng Lim , Yong-su Kim
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , G11C11/5607 , H01L27/228
摘要： A multi-bit magnetic memory device using a spin-polarized current and methods of manufacturing and operating the same. The magnetic memory device includes a switching device and a magnetic storage node connected to the switching device, wherein the magnetic storage node includes a first magnetic layer, a second magnetic layer and a free magnetic layer which are vertically and separately disposed from one another. The first and second magnetic layer have transmission characteristics opposite to each other for spin-polarized electrons, and have magnetic polarizations that are opposite to each other. The free magnetic layer may include first and second free magnetic layers, which are separately disposed from each other. The magnetic storage node may further include third and fourth magnetic layers that are separately disposed between the first and second free magnetic layers.
摘要翻译：使用自旋极化电流的多位磁存储器件及其制造和操作方法。磁存储器件包括连接到开关器件的开关器件和磁存储节点，其中磁存储节点包括彼此垂直且分开设置的第一磁性层，第二磁性层和自由磁性层。第一和第二磁性层对于自旋极化电子具有彼此相反的传输特性，并且具有彼此相反的磁极化。自由磁性层可以包括彼此分开设置的第一和第二自由磁性层。磁存储节点还可以包括分开设置在第一和第二自由磁性层之间的第三和第四磁性层。

55. 发明授权

US07502248B2 Multi-bit magnetic random access memory device 有权
标题翻译：多位磁性随机存取存储器件
公开(公告)号：US07502248B2
公开(公告)日：2009-03-10
申请号：US11117352
申请日：2005-04-29
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01F10/3263 , B82Y25/00 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A multi-bit magnetic random access memory device and a method for writing to and sensing the multi-bit magnetic random access memory device. The magnetic memory includes a memory cell with a multilayer structure having a plurality of data layers which can each store one bit. The structure includes a plurality of magnetically changeable ferromagnetic layers, a ferromagnetic reference layer having a fixed magnetization state, a first spacer layer separating the magnetically changeable ferromagnetic layers, and a second spacer layer separating the ferromagnetic reference layer from the magnetically changeable ferromagnetic layers. This structure allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.
摘要翻译：一种多位磁随机存取存储器件以及用于写入和感测多位磁性随机存取存储器件的方法。磁存储器包括具有多个数据层的多层结构的存储单元，每个数据层可以存储一位。该结构包括多个可磁化铁磁层，具有固定磁化状态的铁磁参考层，分离可磁化铁磁层的第一间隔层和将铁磁参考层与磁性可变铁磁层隔开的第二间隔层。这种结构允许存储多于一位，以及有效的写入和降低的功耗。

56. 发明授权

US07486478B2 Magnetic head 失效
标题翻译：磁头
公开(公告)号：US07486478B2
公开(公告)日：2009-02-03
申请号：US11247305
申请日：2005-10-12
申请人： Chee-kheng Lim , Yong-su Kim
发明人： Chee-kheng Lim , Yong-su Kim
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/3143
摘要： Provided is a magnetic head having a magnetic thin film structure that reduces the effect of a stray field and generates a magnetization reversal at a high speed. The magnetic head includes a first pole, a second pole spaced apart from the first pole, and an induction coil that induces a magnetic field in the first and second poles, wherein the first and second poles include a pole tip in which a leakage flux for recording is generated, and a head yoke that guides the flux flowing in the poles, and at least one implant for controlling a magnetic domain, the implant formed in at least one of the first and second poles. The magnetic thin film can effectively reduce the effect of a stray field entering from the outside, and can control a domain wall motion so that high speed magnetic recording is possible, by generating a magnetization reversal at a high speed corresponding to a magnetic field applied by an induction coil.
摘要翻译：本发明提供一种具有磁性薄膜结构的磁头，其能够降低杂散磁场的影响并产生高速的磁化反转。磁头包括第一极，与第一极分开的第二极和感应线圈，其在第一和第二极中引起磁场，其中第一和第二极包括极尖，其中漏极通量用于产生记录，以及引导磁极在磁极中流动的磁头磁轭，以及用于控制磁畴的至少一个注入，形成在第一和第二磁极中的至少一个上的注入。磁性薄膜可以有效地降低从外部进入的杂散场的影响，并且可以控制畴壁运动，从而可以通过相应于由磁场施加的磁场产生高速磁化反转，从而实现高速磁记录感应线圈。

57. 发明申请

US20080299416A1 PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：全能磁记录介质及其制造方法
公开(公告)号：US20080299416A1
公开(公告)日：2008-12-04
申请号：US12018270
申请日：2008-01-23
申请人： Seong-yong YOON , Chee-kheng Lim , Hoo-san Lee , Hoon-sang Oh , Sok-hyun Kong
发明人： Seong-yong YOON , Chee-kheng Lim , Hoo-san Lee , Hoon-sang Oh , Sok-hyun Kong
IPC分类号： G11B5/62 , G11B5/66 , G11B5/84 , G11B5/65
CPC分类号： G11B5/667 , G11B5/64 , G11B5/65 , G11B5/7325 , G11B5/84
摘要： A perpendicular magnetic recording medium and a method of manufacturing the same are provided. The perpendicular magnetic recording medium comprises a recording layer including a plurality of regions formed in the depth direction of the recording layer and a magnetic anisotropy constant of a region relatively deeper than another region, among the plurality of regions, is greater than that of the another region. The method of manufacturing a perpendicular magnetic recording medium includes: forming a recording layer having perpendicular magnetic anisotropy; and irradiating the recording layer with ions.
摘要翻译：提供了一种垂直磁记录介质及其制造方法。垂直磁记录介质包括记录层，该记录层包括在记录层的深度方向上形成的多个区域和多个区域中比另一区域相对更深的区域的磁各向异性常数大于另一区域的磁各向异性常数地区。制造垂直磁记录介质的方法包括：形成具有垂直磁各向异性的记录层; 并用离子照射记录层。

58. 发明申请

US20080160349A1 Magnetic domain data storage devices and methods of manufacturing the same 有权
标题翻译：磁畴数据存储装置及其制造方法
公开(公告)号：US20080160349A1
公开(公告)日：2008-07-03
申请号：US12000243
申请日：2007-12-11
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11B5/66 , B44C1/22 , G11B5/33
CPC分类号： G11C19/0808 , G11C11/14
摘要： Example embodiments may provide data storage devices using movement of magnetic domain walls including a first magnetic layer having at least two magnetic domains with determinable magnetization directions, and/or a soft second magnetic layer formed on a lower surface of the first magnetic layer. Magnetic domain walls may be moved even in curved regions of the first magnetic layer.
摘要翻译：示例性实施例可以使用包括具有至少两个具有可确定的磁化方向的磁畴的第一磁性层和/或形成在第一磁性层的下表面上的软的第二磁性层的磁畴壁的移动来提供数据存储装置。即使在第一磁性层的弯曲区域中，也可以移动磁畴壁。

59. 发明申请

US20060256473A1 Perpendicular magnetic recording head 失效
标题翻译：垂直磁记录头
公开(公告)号：US20060256473A1
公开(公告)日：2006-11-16
申请号：US11413000
申请日：2006-04-28
申请人： Chee-kheng Lim , Yong-su Kim , Hoo-san Lee
发明人： Chee-kheng Lim , Yong-su Kim , Hoo-san Lee
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/11
摘要： A perpendicular magnetic recording head including: a data recording module comprising a main pole, a return pole, and a coil wrapped around the main pole; and a data reproduction module including magnetic shield layers and a reading device located between the magnetic shield layers, wherein the width of a lower end of the main pole is gradually reduced in a downward direction thereof, and the lower end of the main pole comprises a first part and a second part extending from the first part, the first part having a curved surface of a first curvature and the second part having a curved surface of a second curvature. The first curvature can be equal to or different from the second curvature, and magnetic shield devices can be further disposed on both sides of the lower end of the main pole.
摘要翻译：一种垂直磁记录头，包括：数据记录模块，包括主极，返回极和缠绕在主极上的线圈; 以及包括磁屏蔽层和位于磁屏蔽层之间的读取装置的数据再现模块，其中主极的下端的宽度在其向下的方向上逐渐减小，并且主极的下端包括第一部分和第二部分从第一部分延伸，第一部分具有第一曲率的曲面，第二部分具有第二曲率的曲面。第一曲率可以等于或不同于第二曲率，并且磁屏蔽装置可以进一步设置在主极的下端的两侧。

60. 发明申请

US20060087881A1 Advanced multi-bit magnetic random access memory device 有权
公开(公告)号：US20060087881A1
公开(公告)日：2006-04-27
申请号：US11117453
申请日：2005-04-29
申请人： Chee-kheng Lim
发明人： Chee-kheng Lim
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/5607
摘要： An advanced multi-bit magnetic random access memory device and a method for writing to the advanced multi-bit magnetic random access memory device. The magnetic memory includes one or more pair-cells. A pair-cell is two memory cells. Each memory cell has a magnetic multilayer structure. The structure includes a magnetically changeable ferromagnetic layer, a ferromagnetic reference layer having a non-changeable magnetization state, and a corresponding spacer layer separating the ferromagnetic layers. The memory cells are arranged such that an effective remnant magnetization of each of the cells is non-parallel from the cells' long-axis. This allows for more than one-bit to be stored as well as for efficient writing and reduced power consumption.

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