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51. 发明授权

US08686411B2 Methods of self-aligned growth of chalcogenide memory access device 有权
公开(公告)号：US08686411B2
公开(公告)日：2014-04-01
申请号：US13837736
申请日：2013-03-15
申请人： Neil Greeley , Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
发明人： Neil Greeley , Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
IPC分类号： H01L29/06
CPC分类号： H01L27/2481 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1608 , H01L45/165 , H01L45/1658 , H01L45/1683
摘要： Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

52. 发明授权

US08455299B2 Methods utilizing microwave radiation during formation of semiconductor constructions 有权
标题翻译：在半导体结构形成期间利用微波辐射的方法
公开(公告)号：US08455299B2
公开(公告)日：2013-06-04
申请号：US13608992
申请日：2012-09-10
申请人： John Smythe , Bhaskar Srinivasan , Ming Zhang
发明人： John Smythe , Bhaskar Srinivasan , Ming Zhang
IPC分类号： H01L21/06 , H01L21/336 , H01L21/00
CPC分类号： H01L29/66136 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/823425 , H01L21/823814 , H01L27/10873 , H01L27/24 , H01L29/665 , H01L29/6659
摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
摘要翻译：一些实施例包括在形成半导体结构期间使用微波辐射来激活掺杂剂和/或增加半导体材料的结晶度的方法。在一些实施例中，微波辐射具有约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过约500℃。

53. 发明申请

US20120241911A1 METHODS OF SELF-ALIGNED GROWTH OF CHALCOGENIDE MEMORY ACCESS DEVICE 有权
标题翻译： CHALCOGENIDE MEMORY ACCESS DEVICE的自对准生长方法
公开(公告)号：US20120241911A1
公开(公告)日：2012-09-27
申请号：US13491165
申请日：2012-06-07
申请人： Neil Greeley , Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
发明人： Neil Greeley , Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
IPC分类号： H01L29/24
CPC分类号： H01L27/2481 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1608 , H01L45/165 , H01L45/1658 , H01L45/1683
摘要： Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.
摘要翻译：用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。该方法可用于形成三维堆叠的交叉点存储器阵列。该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。

54. 发明申请

US20120122292A1 Methods of Forming a Non-Volatile Resistive Oxide Memory Array 有权
标题翻译：形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US20120122292A1
公开(公告)日：2012-05-17
申请号：US13354163
申请日：2012-01-19
申请人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
发明人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
IPC分类号： H01L21/02
CPC分类号： H01L27/101 , H01L21/0271 , Y10S438/947
摘要： A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another.
摘要翻译：形成非易失性电阻氧化物存储器阵列的方法包括在衬底上形成多个导电字线或导电位线。含金属氧化物的材料形成在多条所述一条字线或位线中。在多个所述一条字线或位线之间提供一系列细长的沟槽。多个自组装嵌段共聚物线形成在沟槽中的各个内，与沟槽侧壁之间对准并且在沟槽侧壁之间形成。从所述多个自组装嵌段共聚物线路提供多个导电字线或导电位线，以形成包含所述金属氧化物的材料的单独可编程的结，其中字线和位线彼此交叉。

55. 发明申请

US20120112185A1 HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME 有权
标题翻译：用于其的高性能二极管器件结构和材料
公开(公告)号：US20120112185A1
公开(公告)日：2012-05-10
申请号：US13352833
申请日：2012-01-18
申请人： Gurtej Sandhu , Bhaskar Srinivasan
发明人： Gurtej Sandhu , Bhaskar Srinivasan
IPC分类号： H01L29/12 , H01L21/329
CPC分类号： H01L29/24 , H01L27/24 , H01L45/00
摘要： A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
摘要翻译：包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。

56. 发明申请

US20120001147A1 Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays 有权
标题翻译：非易失性电阻氧化物记忆单元，非易失性电阻氧化物存储器阵列以及形成非易失性电阻氧化物记忆单元和存储器阵列的方法
公开(公告)号：US20120001147A1
公开(公告)日：2012-01-05
申请号：US13231667
申请日：2011-09-13
申请人： John Smythe , Bhaskar Srinivasan , Gurtej Sandhu
发明人： John Smythe , Bhaskar Srinivasan , Gurtej Sandhu
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , G11C11/56 , G11C13/00 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over the first electrode. The opening includes sidewalls and a base. The opening sidewalls and base are lined with a multi-resistive state layer comprising multi-resistive state metal oxide-comprising material which less than fills the opening. A second conductive electrode of the memory cell is formed within the opening laterally inward of the multi-resistive state layer lining the sidewalls and elevationally over the multi-resistive state layer lining the base. Other aspects and implementations are contemplated.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。绝缘材料沉积在第一电极上。在第一电极上形成绝缘材料的开口。开口包括侧壁和底座。开口侧壁和基底衬有包含少于填充开口的多电阻态金属氧化物材料的多电阻状态层。存储单元的第二导电电极形成在多个电阻状态层的横向内侧的开口的内部，该电阻层衬在侧壁上并且在衬底基底上的多电阻状态层上。考虑了其他方面和实现。

57. 发明授权

US07985617B2 Methods utilizing microwave radiation during formation of semiconductor constructions 失效
标题翻译：在半导体结构形成期间利用微波辐射的方法
公开(公告)号：US07985617B2
公开(公告)日：2011-07-26
申请号：US12208886
申请日：2008-09-11
申请人： John Smythe , Bhaskar Srinivasan , Ming Zhang
发明人： John Smythe , Bhaskar Srinivasan , Ming Zhang
IPC分类号： H01L21/06 , H01L21/336 , H01L21/00
CPC分类号： H01L29/66136 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/823425 , H01L21/823814 , H01L27/10873 , H01L27/24 , H01L29/665 , H01L29/6659
摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
摘要翻译：一些实施例包括在形成半导体结构期间使用微波辐射来激活掺杂剂和/或增加半导体材料的结晶度的方法。在一些实施例中，微波辐射具有约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过约500℃。

58. 发明申请

US20110062511A1 DEVICE HAVING COMPLEX OXIDE NANODOTS 有权
标题翻译：具有复合氧化物纳米粒子的装置
公开(公告)号：US20110062511A1
公开(公告)日：2011-03-17
申请号：US12949558
申请日：2010-11-18
申请人： Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
发明人： Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
IPC分类号： H01L29/792 , B82Y99/00
CPC分类号： H01L21/31691 , H01L21/28273 , H01L21/3142 , H01L29/42332 , H01L29/7881
摘要： Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric; and a gate electrode over the third dielectric.
摘要翻译：公开了诸如具有存储器单元的器件。存储单元包括由半导体材料形成的有源区; 半导体材料上的第一电介质; 第二电介质，其包括在所述第一电介质上方具有钙钛矿结构的材料; 在所述第二电介质上的第三电介质; 以及位于第三电介质上的栅电极。

59. 发明申请

US20100062562A1 Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions 失效
标题翻译：在半导体结构形成过程中利用微波辐射的方法
公开(公告)号：US20100062562A1
公开(公告)日：2010-03-11
申请号：US12208886
申请日：2008-09-11
申请人： John Smythe , Bhaskar Srinivasan , Ming Zhang
发明人： John Smythe , Bhaskar Srinivasan , Ming Zhang
IPC分类号： H01L45/00 , H01L21/336 , H01L21/20 , H01L21/263
CPC分类号： H01L29/66136 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/823425 , H01L21/823814 , H01L27/10873 , H01L27/24 , H01L29/665 , H01L29/6659
摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
摘要翻译：一些实施例包括在形成半导体结构期间使用微波辐射来激活掺杂剂和/或增加半导体材料的结晶度的方法。在一些实施例中，微波辐射具有约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过约500℃。

60. 发明申请

US20090316697A1 Pre-Dropping of a Packet if Its Time-To-Live (TTL) Value is Not Large Enough to Reach a Destination 有权
标题翻译：如果数据包的生存时间（TTL）值不足以达到目的地，则丢弃数据包
公开(公告)号：US20090316697A1
公开(公告)日：2009-12-24
申请号：US12185109
申请日：2008-08-03
申请人： Karthik Dakshinamoorthy , Bhaskar Srinivasan
发明人： Karthik Dakshinamoorthy , Bhaskar Srinivasan
IPC分类号： H04L12/56
CPC分类号： H04L12/1886 , H04L47/10
摘要： Disclosed are, inter alia, methods, apparatus, computer-storage media, mechanisms, and means associated with pre-dropping of a packet if its Time-To-Live (TTL) value is not large enough to reach a destination, such as, but not limited to, its destination if it is a unicast packet, or at least one more destination for a multicast packet. A packet switching device maintains associations between (a) nearest receiving node distances and (b) prefixes or complete addresses. If a packet does not have enough TTL to reach an intended recipient identified by a corresponding nearest receiving node distance, then the packet is dropped even though the TTL has not expired. In this manner, some bandwidth and other network resources are not wasted on traffic that will timeout via the TTL mechanism before reaching a subsequent intended recipient.
摘要翻译：披露了如果其生存时间（TTL）值不足以到达目的地的方法，装置，计算机存储介质，机制和与丢弃分组相关联的装置，例如，但不限于，如果它是单播分组，则其目的地，或者至少一个多播分组的目的地。分组交换设备保持（a）最近的接收节点距离和（b）前缀或完整地址之间的关联。如果分组没有足够的TTL来达到由对应的最近接收节点距离标识的预期接收者，则即使TTL未过期，分组也被丢弃。以这种方式，一些带宽和其他网络资源不会浪费在通过TTL机制超时到达后续预期接收者的流量上。

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