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51. 发明申请

US20100219047A1 TRAVELING WAVE GRIDS WITH AGITATED SURFACE USING PIEZOELECTRIC EFFECT AND ACOUSTIC TRAVELING WAVES 有权
标题翻译：使用压电效应和声波行驶波动的具有致动表面的行波
公开(公告)号：US20100219047A1
公开(公告)日：2010-09-02
申请号：US12777402
申请日：2010-05-11
申请人： Baomin Xu , Meng H. Lean , Scott Jong Ho Limb
发明人： Baomin Xu , Meng H. Lean , Scott Jong Ho Limb
IPC分类号： B65G35/00 , B06B1/06 , H01L41/04 , H01L41/113
CPC分类号： H02N2/08
摘要： A system for transporting particles includes a substrate and a plurality of spaced electrically conductive electrodes carried by the substrate. Further included is a carrier medium adapted for the retention and migration of particles disposed therein, wherein the carrier medium is in operational contact with the electrodes, and a vibration generator is positioned in relation to the substrate to impart vibrations into the carrier medium. In an alternative embodiment, the vibration generator is configured to generate an acoustic traveling wave, which includes a vibration component and a motivation component.
摘要翻译：用于输送颗粒的系统包括基板和由基板承载的多个间隔开的导电电极。还包括一种载体介质，其适于保持和迁移设置在其中的颗粒，其中载体介质与电极操作接触，并且振动发生器相对于基板定位，以将振动赋予载体介质。在替代实施例中，振动发生器被配置为产生声波行波，其包括振动分量和激励分量。

52. 发明授权

US07764005B2 Traveling wave grids with agitated surface using piezoelectric effect and acoustic traveling waves 失效
标题翻译：使用压电效应和声波行波，具有搅动表面的行波电网
公开(公告)号：US07764005B2
公开(公告)日：2010-07-27
申请号：US11501898
申请日：2006-08-08
申请人： Baomin Xu , Meng H. Lean , Scott Jong Ho Limb
发明人： Baomin Xu , Meng H. Lean , Scott Jong Ho Limb
IPC分类号： H01L41/04
CPC分类号： H02N2/08
摘要： A system for transporting particles includes a substrate and a plurality of spaced electrically conductive electrodes carried by the substrate. Further included is a carrier medium adapted for the retention and migration of particles disposed therein, wherein the carrier medium is in operational contact with the electrodes, and a vibration generator is positioned in relation to the substrate to impart vibrations into the carrier medium. In an alternative embodiment, the vibration generator is configured to generate an acoustic traveling wave, which includes a vibration component and a motivation component.
摘要翻译：用于输送颗粒的系统包括基板和由基板承载的多个间隔开的导电电极。还包括一种载体介质，其适于保持和迁移设置在其中的颗粒，其中载体介质与电极操作接触，并且振动发生器相对于基板定位，以将振动赋予载体介质。在替代实施例中，振动发生器被配置为产生声波行波，其包括振动分量和激励分量。

53. 发明申请

US20090320992A1 METHODS FOR MANUFACTURING STRESSED MATERIAL AND SHAPE MEMORY MATERIAL MEMS DEVICES 有权
标题翻译：制造应力材料和形状记忆材料MEMS器件的方法
公开(公告)号：US20090320992A1
公开(公告)日：2009-12-31
申请号：US11367102
申请日：2006-03-03
申请人： Baomin Xu , David Kirtland Fork , Michael Yu Tak Young , Eugene Michael Chow
发明人： Baomin Xu , David Kirtland Fork , Michael Yu Tak Young , Eugene Michael Chow
IPC分类号： B32B37/00 , B05D5/12 , C23C14/34
CPC分类号： G11C23/00 , F03G7/065 , F04B17/003 , F05C2201/0412 , F05C2203/0813 , F05C2251/00 , F05C2251/08 , H01L41/094
摘要： Disclosed is a MEMS device which comprises at least one shape memory material such as a shape memory alloy (SMA) layer and at least one stressed material layer. Examples of such MEMS devices include an actuator, a micropump, a microvalve, or a non-destructive fuse-type connection probe. The device exhibits a variety of improved properties, for example, large deformation ability and high energy density. Also provided is a method of easily fabricating the MEMS device in the form of a cantilever-type or diaphragm-type structure.
摘要翻译：公开了一种MEMS器件，其包括至少一种形状记忆材料，例如形状记忆合金（SMA）层和至少一个应力材料层。这种MEMS器件的实例包括致动器，微型泵，微型阀或非破坏性熔断器型连接探针。该装置具有各种改进的性能，例如，大的变形能力和高的能量密度。还提供了以悬臂式或隔膜式结构的形式容易地制造MEMS器件的方法。

54. 发明申请

US20090073242A1 MULTI-LAYER MONOLITHIC FLUID EJECTORS USING PIEZOELECTRIC ACTUATION 有权
标题翻译：使用压电致动器的多层单相流体喷射器
公开(公告)号：US20090073242A1
公开(公告)日：2009-03-19
申请号：US12273575
申请日：2008-11-19
申请人： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
发明人： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639 , B41J2/1642 , B41J2/1643 , B41J2/1646 , B41J2002/14475 , Y10T29/42 , Y10T29/49401
摘要： A fluid ejector including a silicon wafer having a first side and a second side. A multi-layer monolithic structure is formed on the first side of the silicon wafer. The multi-layer monolithic structure includes a first structure layer formed on the first side of the silicon wafer, and the first structure layer has an aperture. A second structure layer has a horizontal portion and closed, filled trenches or vertical sidewalls. The first structure layer, horizontal portion and the closed, filled trenches or vertical sidewalls of the second structure layer define a fluid cavity. An actuator is associated with the horizontal portion of the second structure layer, and an etched portion of the silicon wafer defines an open area which exposes the aperture in the first structure layer.
摘要翻译：一种流体喷射器，包括具有第一侧和第二侧的硅晶片。在硅晶片的第一侧上形成多层整体结构。多层单片结构包括形成在硅晶片的第一侧上的第一结构层，第一结构层具有孔。第二结构层具有水平部分和闭合的填充沟槽或垂直侧壁。第二结构层的第一结构层，水平部分和闭合填充的沟槽或垂直侧壁限定流体腔。致动器与第二结构层的水平部分相关联，并且硅晶片的蚀刻部分限定露出第一结构层中的孔的开放区域。

55. 发明授权

US06895645B2 Methods to make bimorph MEMS devices 失效
标题翻译：制造双压电晶片MEMS器件的方法
公开(公告)号：US06895645B2
公开(公告)日：2005-05-24
申请号：US10375975
申请日：2003-02-25
申请人： Baomin Xu , William S. Wong
发明人： Baomin Xu , William S. Wong
IPC分类号： H01L41/09 , H01L41/24 , H02N2/04 , H04R17/00 , H01L41/04
CPC分类号： B81B3/0024 , B81B2201/032 , H01L41/094 , H01L41/22 , H01L41/313 , H01L41/314 , H01L41/337 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： A bimorph structure is produced by depositing a first material on a first surface of a first substrate to form a first element structure. A second material is deposited onto a surface of a second substrate to form a second element structure. Electrodes are deposited on a surface of each of the first element structure and the second element structure. The first element structure is bonded to a first transfer substrate, and the second element structure is bonded to a second transfer substrate. The first substrate is removed from the first element structure, and the second substrate is removed from the second element structure. Second side electrodes are deposited on a second surface of each of the first element structures and the second element structure. The first element structure and the second element structure are directly bonded to each other. One of the first transfer substrate and the second transfer substrate is then removed, and the surface of the element structure from which one of the transfer substrates has been removed is bonded to a final target substrate. Thereafter, the other transfer substrate is removed, and electrical connections are made.
摘要翻译：通过在第一基板的第一表面上沉积第一材料以形成第一元件结构来生产双压电晶片结构。将第二材料沉积到第二基板的表面上以形成第二元件结构。电极沉积在第一元件结构和第二元件结构中的每一个的表面上。第一元件结构被结合到第一转移衬底，并且第二元件结构被结合到第二转移衬底。从第一元件结构去除第一衬底，并且从第二元件结构去除第二衬底。第二侧电极沉积在每个第一元件结构和第二元件结构的第二表面上。第一元件结构和第二元件结构彼此直接结合。然后去除第一转印衬底和第二转印衬底之一，并且去除了一个转印衬底的元件结构的表面被结合到最终靶衬底。此后，移除另一转印基板，并进行电连接。

56. 发明申请

US20050104479A1 Piezoelectric ceramic thick film element, array of elements, and devices 有权
标题翻译：压电陶瓷厚膜元件，元件阵列和器件
公开(公告)号：US20050104479A1
公开(公告)日：2005-05-19
申请号：US11017494
申请日：2004-12-20
申请人： Baomin Xu , Steven Buhler , Michael Welsberg , William Wong , Scott Solberg , Karl Littau , John Fitch , Scott Elrod
发明人： Baomin Xu , Steven Buhler , Michael Welsberg , William Wong , Scott Solberg , Karl Littau , John Fitch , Scott Elrod
IPC分类号： B41J2/16 , H01L41/24 , H01L41/08
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1634 , B41J2/1637 , B41J2/1646 , H01L41/313 , H01L41/314 , H01L41/331 , H01L2221/68368 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/4981
摘要： A piezoelectric thick film element array includes at least one piezoelectric element structure having a thickness between 10 μm to 100 μm formed by a deposition process. The at least one piezoelectric element is patterned during the deposition process, and includes a first electrode deposited on a first surface of the piezoelectric elements structure, and a second electrode deposited on a second surface of the piezoelectric element structure. In a further embodiment, several devices are provided using a piezoelectric element or an array having a piezoelectric element structure with a thickness of between 10 μm to 100 μm formed by a deposition process. These devices include microfluidic ejectors, transducer arrays and catheters.
摘要翻译：压电厚膜元件阵列包括通过沉积工艺形成的至少一个压电元件结构，其厚度在10um至100μm之间。所述至少一个压电元件在所述沉积工艺期间被图案化，并且包括沉积在所述压电元件结构的第一表面上的第一电极和沉积在所述压电元件结构的第二表面上的第二电极。在另一实施例中，使用压电元件或具有通过沉积工艺形成的厚度在10um至100μm之间的压电元件结构的阵列来提供若干器件。这些装置包括微流体喷射器，换能器阵列和导管。

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