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51. 发明授权

US06812524B2 Field effect controlled semiconductor component 有权
标题翻译：场效应控制半导体元件
公开(公告)号：US06812524B2
公开(公告)日：2004-11-02
申请号：US10013999
申请日：2001-12-11
申请人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
发明人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/1095 , H01L29/41766 , H01L29/7816
摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.
摘要翻译：半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。补偿区相对于漂移区具有互补导电类型并且包括至少两个段。选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围当前。

52. 发明授权

US08569842B2 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices 有权
标题翻译：具有第一半导体器件和多个第二半导体器件的半导体器件布置
公开(公告)号：US08569842B2
公开(公告)日：2013-10-29
申请号：US13275151
申请日：2011-10-17
申请人： Rolf Weis , Franz Hirler , Matthias Stecher , Armin Willmeroth , Gerald Deboy , Martin Feldtkeller
发明人： Rolf Weis , Franz Hirler , Matthias Stecher , Armin Willmeroth , Gerald Deboy , Martin Feldtkeller
IPC分类号： H01L27/06 , H01L27/088 , H01L27/098 , H01L29/161 , H01L29/20 , H01L29/778 , H01L29/788
CPC分类号： H01L27/0207 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L27/0623 , H01L27/0629 , H01L27/0727 , H01L27/088 , H01L27/0883 , H01L27/0886 , H01L27/098 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/4236 , H01L29/4238 , H01L29/78 , H01L29/7817 , H01L29/7824 , H01L29/7825 , H01L29/7835 , H01L29/7838 , H03K17/06
摘要： A semiconductor device arrangement includes a first semiconductor device having a load path, and a number of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor. Each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors. One of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.
摘要翻译：半导体器件布置包括具有负载路径的第一半导体器件和多个第二晶体管，每个具有第一和第二负载端子与控制端子之间的负载路径。第二晶体管的负载路径串联连接并与第一晶体管的负载路径串联连接。每个第二晶体管的控制端连接到其它第二晶体管的负载端子。第二晶体管中的一个具有其控制端子连接到第一半导体器件的负载端子之一。

53. 发明申请

US20120305993A1 TRANSISTOR WITH CONTROLLABLE COMPENSATION REGIONS 有权
标题翻译：具有可控制补偿区的晶体管
公开(公告)号：US20120305993A1
公开(公告)日：2012-12-06
申请号：US13484490
申请日：2012-05-31
申请人： Armin Willmeroth , Franz Hirler , Hans Weber , Michael Treu
发明人： Armin Willmeroth , Franz Hirler , Hans Weber , Michael Treu
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L27/088 , H01L27/098 , H01L29/0634 , H01L29/407 , H01L29/41766 , H01L29/42356 , H01L29/7803 , H01L29/7831
摘要： A semiconductor device includes a gate terminal, at least one control terminal and first and second load terminals and at least one device cell. The at least one device cell includes a MOSFET device having a load path and a control terminal, the control terminal coupled to the gate terminal and a JFET device having a load path and a control terminal, the load path connected in series with the load path of the MOSFET device between the load terminals. The at least one device cell further includes a first coupling transistor having a load path and a control terminal, the load path coupled between the control terminal of the JFET device and one of the source terminal and the gate terminal, and the control terminal coupled to the at least one control terminal of the transistor device.
摘要翻译：半导体器件包括栅极端子，至少一个控制端子以及第一和第二负载端子以及至少一个器件单元。所述至少一个器件单元包括具有负载路径和控制端子的MOSFET器件，所述控制端子耦合到所述栅极端子以及具有负载路径和控制端子的JFET器件，所述负载路径与所述负载路径串联连接的MOSFET器件在负载端子之间。所述至少一个器件单元还包括具有负载路径和控制端子的第一耦合晶体管，所述负载路径耦合在所述JFET器件的控制端子与所述源极端子和所述栅极端子之一之间，并且所述控制端子耦合到晶体管器件的至少一个控制端子。

54. 发明申请

US20120032255A1 INTEGRATED CIRCUIT HAVING COMPENSATION COMPONENT 有权
标题翻译：具有补偿组件的集成电路
公开(公告)号：US20120032255A1
公开(公告)日：2012-02-09
申请号：US13277820
申请日：2011-10-20
申请人： Armin Willmeroth , Holger Kapels
发明人： Armin Willmeroth , Holger Kapels
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/7802 , H01L29/7824
摘要： An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.
摘要翻译：公开了一种集成电路和部件。在一个实施例中，组件是补偿部件，公开了以V形方式构造漂移区域中的补偿区域，以实现空间电荷区域从补偿区域的上端到下端的会聚。

55. 发明授权

US08101997B2 Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production 有权
标题翻译：具有半导体主体中的载流子补偿结构的半导体器件及其制造方法
公开(公告)号：US08101997B2
公开(公告)日：2012-01-24
申请号：US12111749
申请日：2008-04-29
申请人： Armin Willmeroth , Michael Rueb
发明人： Armin Willmeroth , Michael Rueb
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/7395
摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.
摘要翻译：在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

56. 发明授权

US08063419B2 Integrated circuit having compensation component 有权
标题翻译：具有补偿元件的集成电路
公开(公告)号：US08063419B2
公开(公告)日：2011-11-22
申请号：US11623571
申请日：2007-01-16
申请人： Armin Willmeroth , Holger Kapels
发明人： Armin Willmeroth , Holger Kapels
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/7802 , H01L29/7824
摘要： An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.
摘要翻译：公开了一种集成电路和部件。在一个实施例中，组件是补偿部件，公开了以V形方式构造漂移区域中的补偿区域，以实现空间电荷区域从补偿区域的上端到下端的会聚。

57. 发明申请

US20110089481A1 MOS TRANSISTOR WITH ELEVATED GATE DRAIN CAPACITY 有权
标题翻译：具有高度门排水能力的MOS晶体管
公开(公告)号：US20110089481A1
公开(公告)日：2011-04-21
申请号：US12976107
申请日：2010-12-22
申请人： Armin Willmeroth , Michael Treu
发明人： Armin Willmeroth , Michael Treu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/66712 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.
摘要翻译：描述了具有增加的栅 - 漏电容的MOS晶体管。一个实施例提供了第一导电类型的漂移区。至少一个晶体管单元具有体区，通过体区与漂移区分离的源极区以及邻近体区设置并通过栅介质与体区介电绝缘的栅电极。在漂移区域中布置有至少一个第一导电类型的补偿区域。至少一个反馈电极被布置在与身体区隔一定距离处，该区域通过反馈电介质与漂移区介电绝缘，并且与电极导电连接。

58. 发明授权

US07446373B2 Semiconductor component and method for producing it 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07446373B2
公开(公告)日：2008-11-04
申请号：US10939154
申请日：2004-09-10
申请人： Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
发明人： Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0847 , H01L29/0878 , H01L29/42368 , H01L29/7811
摘要： A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.
摘要翻译：公开了一种半导体元件及其制造方法。在一个实施例中，半导体部件包括表面区域或修改的掺杂区域交替地或同时地设置在电池阵列的边缘区域中，其中掺杂浓度降低的表面区域或修饰掺杂区域和/或其中表面区域或改性掺杂区域形成导电类型，使其与实际的半导体材料区域的导电类型相反，或者设置有场板区域。

59. 发明申请

US20080265318A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT 有权
标题翻译：半导体元件及其生产方法
公开(公告)号：US20080265318A1
公开(公告)日：2008-10-30
申请号：US12167437
申请日：2008-07-03
申请人： Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
发明人： Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0847 , H01L29/0878 , H01L29/42368 , H01L29/7811
摘要： A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.
摘要翻译：半导体部件包括表面区域。在单元阵列的边缘区域中提供修改的掺杂区域。在表面区域或改性掺杂区域中，掺杂浓度降低和/或在表面区域或修饰掺杂区域中形成导电类型，使其与实际半导体材料区域的导电类型相反，或者其中场板区域。

60. 发明申请

US20080179670A1 COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE 审中-公开
标题翻译：包括具有场电极的MOS晶体管的组件布置
公开(公告)号：US20080179670A1
公开(公告)日：2008-07-31
申请号：US12021709
申请日：2008-01-29
申请人： Armin Willmeroth , Franz Hirler
发明人： Armin Willmeroth , Franz Hirler
IPC分类号： H01L29/06
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/402 , H01L29/407 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L29/7813 , H01L29/7816 , H01L29/7825 , H03K17/063 , H03K2017/6878
摘要： A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.
摘要翻译：公开了一种包括具有场电极的MOS晶体管的部件布置。一个实施例包括栅极，漂移区和场电极，其布置成与漂移区相邻并且通过介电层与漂移区介电绝缘，该充电电路具有连接在栅电极和场电极之间的整流元件。

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