专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US5569626A Piezo-optical pressure sensitive switch and methods for fabricating the same 失效
标题翻译：压敏光敏开关及其制造方法
公开(公告)号：US5569626A
公开(公告)日：1996-10-29
申请号：US234307
申请日：1994-04-28
申请人： Anthony D. Kurtz , Joseph S. Shor , Alexander A. Ned
发明人： Anthony D. Kurtz , Joseph S. Shor , Alexander A. Ned
IPC分类号： H01L31/0232 , H01L31/028 , H01L21/306
CPC分类号： H01L31/0232 , H01L31/028 , Y02E10/547 , Y10S438/96 , Y10T29/42
摘要： Piezo-optical pressure sensitive devices employing porous semiconductor material as a stress sensitive member. The devices monitor pressure or force applied thereto by detecting a corresponding change in the amount of light absorbed by a porous layer of semiconductive material such as silicon. A pressure or stress signal is thus converted into an optical one. The sensing element of an optical switch embodiment of the device is comprised of a transparent layer of material upon which there is disposed a porous layer of semiconductive material. When unstressed, the porous layer absorbs monochromatic light of a predetermined wavelength. When the porous layer is stressed, a metallized epitaxial layer formed thereon reflects the light back through the transparent layer where it can be detected by a light detection system.
摘要翻译：使用多孔半导体材料作为应力敏感元件的压电光敏器件。该装置通过检测由诸如硅的半导体材料的多孔层吸收的光量的相应变化来监测施加到其上的压力或力。因此，压力或应力信号被转换为光学信号。装置的光学开关实施例的感测元件由透明的材料层组成，其上设置有多孔半导体材料层。当不受应力时，多孔层吸收预定波长的单色光。当多孔层受到应力时，形成在其上的金属化外延层通过透明层反射光，其中它可被光检测系统检测。

52. 发明授权

US5539236A Piezoresistive accelerometer with enhanced performance 失效
公开(公告)号：US5539236A
公开(公告)日：1996-07-23
申请号：US303456
申请日：1994-09-09
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： G01P15/12 , H01L29/82
CPC分类号： G01P15/123 , Y10S73/01 , Y10S73/04
摘要： An electromechanical transducer is provided, and the process for making it utilizes a piezoresistive element or gage which is dielectrically isolated from a gap spanning member and substrate upon which it is supported. The gage of the invention is a force gage and is derived from a sacrificial wafer by a series of etching and bonding steps which ultimately provide a gage with substantially reduced strain energy requirements.

53. 发明授权

US5428985A Gas leak detection apparatus and methods 失效
标题翻译：气体泄漏检测装置及方法
公开(公告)号：US5428985A
公开(公告)日：1995-07-04
申请号：US191514
申请日：1994-02-03
申请人： Anthony D. Kurtz , Wolf Landmann
发明人： Anthony D. Kurtz , Wolf Landmann
IPC分类号： G01L1/22 , G01L9/04 , G01M3/32 , G01M3/26 , G01N27/04
CPC分类号： G01L1/2281 , G01L9/045 , G01M3/3236
摘要： An improved gas leak detection apparatus is disclosed for detecting a leak in a gas containing vessel of constant volume which compensates for deviations in behavior of a contained gas from an ideal model. The apparatus incorporates a pressure transducer, an amplifying means and a feedback means and operates to effectively and accurately model the van der Waals equation of state for gasses. The apparatus is adaptable for operation with any number of different gases by simply changing the values of specific circuit elements. The output of the apparatus is proportional to the total number of moles of gas present in the containment vessel at any particular time, and will thus indicate a leak from the vessel upon a reduction in that number of moles, absent an intentional reduction of the mass of gas in the vessel.
摘要翻译：公开了一种改进的气体泄漏检测装置，用于检测恒定体积的含气体的容器中的泄漏，其补偿所含气体与理想模型的性能偏差。该装置包括压力传感器，放大装置和反馈装置，并且操作以有效和精确地模拟用于气体的范德华状态方程。该装置通过简单地改变特定电路元件的值，适用于任意数量的不同气体的操作。设备的输出与任何特定时间内存在于安全壳中的气体的总摩尔数成比例，并且因此表示在减少该摩尔数时来自容器的泄漏，没有有意的减小质量的气体。

54. 发明授权

US5386142A Semiconductor structures having environmentally isolated elements and method for making the same 失效
标题翻译：具有环境隔离元件的半导体结构及其制造方法
公开(公告)号：US5386142A
公开(公告)日：1995-01-31
申请号：US58016
申请日：1993-05-07
申请人： Anthony D. Kurtz , Joseph S. Shor , Alexander A. Ned
发明人： Anthony D. Kurtz , Joseph S. Shor , Alexander A. Ned
IPC分类号： G01L9/00 , H01L23/16
CPC分类号： G01L9/0055 , G01L9/0042 , Y10S148/012 , Y10S438/96
摘要： A first semiconductor wafer having a semiconductor element such as a piezoresistive element or any integrated circuit located on a top surface thereof is bonded to a second semiconductor wafer so that the semiconductor element on the first wafer is received in a cavity sealed from the outside environment. The bottom surface of the second water is prepared by etching it about a mask pattern so that the pattern projects from the bottom surface, thereby forming the cavity and defining projecting surfaces which are bonded to corresponding projecting areas on the first wafer to create a hermetic seal therebetween. The second wafer is electrochemically etched to produce porous silicon with regions of non-porous monocrystalline silicon extending between the top and bottom surfaces. The porous areas are thermally oxidized to convert them to silicon dioxide while the non-porous regions bonded to bond pads of the resistive pattern on the first wafer act as extended contacts.
摘要翻译：具有诸如压阻元件的半导体元件或位于其顶表面上的任何集成电路的第一半导体晶片被接合到第二半导体晶片，使得第一晶片上的半导体元件被接收在与外部环境密封的空腔中。第二水的底表面通过围绕掩模图案进行蚀刻来制备，使得图案从底表面突出，从而形成空腔并且限定突出表面，其结合到第一晶片上的相应突出区域以形成气密封之间。第二晶片被电化学蚀刻以产生具有在顶表面和底表面之间延伸的非多孔单晶硅区域的多孔硅。多孔区域被热氧化以将其转化为二氧化硅，而与第一晶片上的电阻图案的接合焊盘键合的非多孔区域作为延伸的触点。

55. 发明授权

US5376818A Large area P-N junction devices formed from porous silicon 失效
标题翻译：由多孔硅形成的大面积P-N结器件
公开(公告)号：US5376818A
公开(公告)日：1994-12-27
申请号：US168465
申请日：1993-12-16
申请人： Anthony D. Kurtz
发明人： Anthony D. Kurtz
IPC分类号： H01L29/16 , H01L29/84 , H01L29/96
CPC分类号： H01L29/16 , H01L29/84 , Y10S438/96
摘要： Stress sensitive P-N junction devices are fabricated by forming a porous layer in a semiconductor of a given conductivity, diffusing dopants of the opposite conductivity into the porous layer and forming a non-porous layer on the porous layer. This results in a microporous structure having a plurality of microcrystalline regions extending therethrough, which enhances the quantum confinement of energetic carriers and results in a device which is highly sensitive to stress.
摘要翻译：通过在给定导电率的半导体中形成多孔层来制造应力敏感的P-N结器件，将具有相反导电性的掺杂剂扩散到多孔层中并在多孔层上形成无孔层。这导致具有延伸穿过其中的多个微晶区域的微孔结构，这增强了高能载流子的量子限制并导致对应力高度敏感的装置。

56. 发明授权

US5376241A Fabricating porous silicon carbide 失效
标题翻译：制造多孔碳化硅
公开(公告)号：US5376241A
公开(公告)日：1994-12-27
申请号：US159375
申请日：1993-11-30
申请人： Joseph S. Shor , Anthony D. Kurtz
发明人： Joseph S. Shor , Anthony D. Kurtz
IPC分类号： H01L21/465 , H01L21/76 , H01L29/24 , H01L29/861 , H01L33/00 , H01L33/34 , C25F3/12
CPC分类号： H01L33/34 , H01L21/465 , H01L21/76 , H01L29/1608 , H01L29/861 , H01L33/0054 , Y10S438/96
摘要： The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.
摘要翻译：多孔SiC的形成发生在电化学阳极氧化下。将SiC样品与镍电接触并置于电化学电池中，该电池包括对电极和参比电极。样品被封装，使得只有裸露的半导体表面被暴露。电化学电池填充有电化学溶解SiC的HF电解质。对半导体施加电位，UV光照射半导体的表面。通过控制光强度，电位和掺杂水平，在半导体中形成多孔层，从而产生多孔SiC。

57. 发明授权

US5286671A Fusion bonding technique for use in fabricating semiconductor devices 失效
标题翻译：用于制造半导体器件的熔接技术
公开(公告)号：US5286671A
公开(公告)日：1994-02-15
申请号：US58400
申请日：1993-05-07
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： H01L21/20 , H01L21/306
CPC分类号： H01L21/2007 , Y10S148/012
摘要： A method of bonding a first silicon wafer to a second silicon wafer comprises the steps of diffusing a high conductivity pattern into a surface of a first semiconductor wafer, etching a portion of the surface to raise at least a portion of the pattern, providing a second semiconductor wafer having an insulating layer of a silicon compound disposed thereon, contacting the surface of the pattern to the insulating layer, and bonding the first and second semiconductor wafers at an elevated temperature.
摘要翻译：将第一硅晶片接合到第二硅晶片的方法包括以下步骤：将高导电性图案扩散到第一半导体晶片的表面中，蚀刻表面的一部分以升高图案的至少一部分，从而提供第二硅晶片半导体晶片具有设置在其上的硅化合物的绝缘层，与图案的表面接触绝缘层，并且在升高的温度下接合第一和第二半导体晶片。

58. 发明授权

US4860442A Methods for mounting components on convoluted three-dimensional structures 失效
标题翻译：组件在卷积三维结构上的安装方法
公开(公告)号：US4860442A
公开(公告)日：1989-08-29
申请号：US276879
申请日：1988-11-28
申请人： Roger W. Ainsworth , John L. Allen , Anthony D. Kurtz
发明人： Roger W. Ainsworth , John L. Allen , Anthony D. Kurtz
IPC分类号： G01D11/30 , G01L19/00 , H05K1/02 , H05K1/03 , H05K1/05 , H05K1/18
CPC分类号： H05K1/021 , G01D11/30 , G01L19/00 , H05K1/0306 , H05K1/053 , H05K1/182 , H05K2201/09745 , H05K2203/049 , Y10T29/49126 , Y10T29/4913
摘要： There is disclosed a method of mounting a pressure transducer on a convoluted three-dimensional structure as for example a turbine blade. The method first forms a groove on a surface of a blade. The groove is formed at a given length and depth in order to accommodate a plurality of components. The groove is then filled with a ceramic material so that the top of the groove is aligned with the top surface of the structure. The entire structure is then coated with a first layer of a ceramic material which layer also covers the filled groove. Suitable conductors are then placed on the coated surface so that they span and overlie the groove. The structure is then coated with a second layer of ceramic material and the coating covers the conductors thereby serving to embed the conductors between the first and second layers. A second groove is then formed in the first and second layers which second groove overlies the first groove and which extends into the first groove. The formation of the second groove operates to separate or cut the conductors as overlying the first groove. Then ceramic material from the second layer is removed on each side of the second groove to expose the separated end surfaces of the conductors. The pressure transducer which is an integrated circuit is then placed into the second groove, and one now bonds the component terminals of the pressure transducer to the exposed conductor surfaces. In this manner both the wires leading from the transducer and the transducer itself are beneath the surface of the structure and do not interfere with the surface contours of the structure while further allowing testing of the same in all operating environments.
摘要翻译：公开了一种将压力传感器安装在例如涡轮叶片的卷积三维结构上的方法。该方法首先在叶片的表面上形成凹槽。凹槽以给定的长度和深度形成，以便容纳多个部件。然后用陶瓷材料填充凹槽，使得凹槽的顶部与结构的顶表面对齐。然后将整个结构涂覆有第一层陶瓷材料，该层还覆盖填充的凹槽。然后将合适的导体放置在涂覆的表面上，使得它们跨越并覆盖在凹槽上。然后将该结构涂覆有第二层陶瓷材料，并且涂层覆盖导体，从而用于将导体嵌入第一和第二层之间。然后在第一和第二层中形成第二凹槽，其中第二凹槽覆盖第一凹槽并且延伸到第一凹槽中。第二凹槽的形成用于将导体分隔或切割成覆盖第一凹槽。然后在第二槽的每一侧去除来自第二层的陶瓷材料，以露出导体的分开的端面。然后将作为集成电路的压力传感器放置在第二槽中，然后将压力传感器的组件端子连接到暴露的导体表面。以这种方式，从换能器和换能器本身引出的电线都在结构的表面下方，并且不会干扰结构的表面轮廓，同时还允许在所有操作环境中对其进行测试。

59. 发明授权

US4814856A Integral transducer structures employing high conductivity surface features 失效
标题翻译：采用高导电性表面特征的积分换能器结构
公开(公告)号：US4814856A
公开(公告)日：1989-03-21
申请号：US860523
申请日：1986-05-07
申请人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
发明人： Anthony D. Kurtz , Timothy A. Nunn , Richard A. Weber
IPC分类号： G01L9/00 , H01L27/20
CPC分类号： G01L9/0055 , G01L9/0042 , H01L27/20
摘要： A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
摘要翻译：通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。载体晶片在顶表面上具有包括玻璃层的电介质层。在人造晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。这些区域表现出基本的换能器结构。通过利用选择性蚀刻，因此可以在牺牲晶片上形成通过静电键结合到载体晶片上的换能器结构。所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。

60. 发明授权

US4766763A Gas leak detection apparatus and methods 失效
标题翻译：气体泄漏检测装置及方法
公开(公告)号：US4766763A
公开(公告)日：1988-08-30
申请号：US46167
申请日：1987-05-05
申请人： Anthony D. Kurtz
发明人： Anthony D. Kurtz
IPC分类号： G01L19/04 , G01M3/26
CPC分类号： G01M3/26 , G01L9/065
摘要： There is disclosed a gas leak detector employing pressure transducers. In one embodiment the pressure in a vessel is monitored by means of a pressure transducer. The output of the pressure transducer is coupled to an operational amplifier whereby the amplifier has a gain which is proportional to 1/T absolute. In this manner, since the gain is inversely proportional to temperature, the amplifier will produce an output which is independent of temperature but which is capable of providing a pressure indication when there is a gas leak in the container.
摘要翻译：公开了一种使用压力传感器的气体泄漏检测器。在一个实施例中，通过压力传感器监测容器中的压力。压力传感器的输出耦合到运算放大器，由此放大器具有与1 / T绝对成比例的增益。以这种方式，由于增益与温度成反比，所以放大器将产生与温度无关的输出，但是当容器中存在气体泄漏时能够提供压力指示。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式