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51. 发明授权

US08466290B2 STAT3 inhibitor containing quinolinecarboxamide derivative as active ingredient 有权
标题翻译：含有喹啉甲酰胺衍生物的STAT3抑制剂作为活性成分
公开(公告)号：US08466290B2
公开(公告)日：2013-06-18
申请号：US13003441
申请日：2009-07-10
申请人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Takane Yokotagawa , Osamu Takahashi , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
发明人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Takane Yokotagawa , Osamu Takahashi , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
IPC分类号： C07D215/38
CPC分类号： C07D401/12 , A61K31/4709 , C07D413/12 , C07D413/14 , C07D417/12 , C07D417/14
摘要： The present invention provides a STATS inhibitor containing as an active ingredient, a quinolinecarboxamide derivative represented by the formula (I) (in the formula, W represents a bond or an alkylene chain; X represents O, S, or NR34; and R1 to R8 and R34 each represent H, halogen, alkyl, phenyl, furyl, thienyl, or the like), or a pharmacologically acceptable salt thereof.
摘要翻译：本发明提供含有作为活性成分的式（I）所示的喹啉甲酰胺衍生物的STATS抑制剂（式中，W表示键或亚烷基链; X表示O，S或NR34; R1〜R8 和R 34各自表示H，卤素，烷基，苯基，呋喃基，噻吩基等）或其药理学上可接受的盐。

52. 发明申请

US20120302524A1 1,3,4-OXADIAZOLE-2-CARBOXAMIDE COMPOUND 有权
标题翻译： 1,3,4-氧杂氮杂-2-羧酰胺化合物
公开(公告)号：US20120302524A1
公开(公告)日：2012-11-29
申请号：US13519707
申请日：2010-12-28
申请人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Osamu Takahashi , Yoshiaki Masuda , Ayumu Muroya , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
发明人： Akira Asai , Kenji Matsuno , Naohisa Ogo , Osamu Takahashi , Yoshiaki Masuda , Ayumu Muroya , Yasuto Akiyama , Tadashi Ashizawa , Tadashi Okawara
IPC分类号： A61K31/4245 , C07D413/14 , A61K31/4439 , C07F7/10 , A61K31/695 , A61K31/454 , A61K31/5377 , A61K31/496 , A61K31/4709 , A61K31/498 , C07D513/04 , A61K31/4545 , A61K31/541 , A61K31/437 , C07D487/04 , A61K31/55 , A61P35/00 , C07D413/04
CPC分类号： C07D413/04 , C07D413/14 , C07D417/14 , C07D487/04 , C07D498/04 , C07D513/04
摘要： Provided is a 1,3,4-oxadiazole-2-carboxamide compound which has STAT3 inhibitory activity and is useful as an anticancer agent. Provided is a 1,3,4-oxadiazole-2-carboxamide compound represented by formula (I) or a pharmacologically acceptable salt thereof (in the formula, Ar represents a furyl group or the like; R1 represents a hydrogen atom or the like; and —X—Y represents a diaryl group such as a biphenyl group).
摘要翻译：提供具有STAT3抑制活性并可用作抗癌剂的1,3,4-恶二唑-2-甲酰胺化合物。提供由式（I）表示的1,3,4-恶二唑-2-甲酰胺化合物或其药学上可接受的盐（在该式中，Ar表示呋喃基等; R 1表示氢原子等; -X-Y表示二苯基等二芳基）。

53. 发明授权

US07676350B2 Optimum design method and apparatus, and program for the same 失效
标题翻译：最佳设计方法和设备，以及相同的程序
公开(公告)号：US07676350B2
公开(公告)日：2010-03-09
申请号：US11778367
申请日：2007-07-16
申请人： Teruyoshi Washizawa , Akira Asai , Masayoshi Tachihara , Katsuhiko Sinjo , Nobuhiro Yoshikawa
发明人： Teruyoshi Washizawa , Akira Asai , Masayoshi Tachihara , Katsuhiko Sinjo , Nobuhiro Yoshikawa
IPC分类号： G06F17/50 , G06G7/48
CPC分类号： G06F17/11
摘要： In an optimum design method comprising a first solution determining step of solving an optimization problem of a first evaluation function for a state variable vector with a design variable vector being as a parameter, and a second solution determining step of solving an optimization problem of a second evaluation function for the design variable vector and the state variable vector thus obtained, the second solution determining step includes the steps of computing a gradient vector of the second evaluation function for the design variable vector, computing a first coefficient based on a value of a norm of the gradient vector, computing a search vector based on the first coefficient, computing a second coefficient, and updating the design variable vector based on the second coefficient. The second coefficient computing step includes the first solution determining step, the first solution determining step is executed as an iterative method based on the gradient vector, and the state variable vector is not initialized during iteration. The optimum design method is precisely adaptable for structural changes.
摘要翻译：一种最优设计方法，包括：第一解决方案确定步骤，用于以设计变量向量作为参数来求解用于状态变量向量的第一评估函数的优化问题;以及第二解决方案确定步骤，用于求解第二第二解决方案确定步骤包括以下步骤：计算用于设计变量向量的第二评估函数的梯度向量，基于规范的值计算第一系数;对于设计变量向量和状态变量向量的评估函数，的梯度向量，基于第一系数计算搜索向量，计算第二系数，并且基于第二系数更新设计变量向量。第二系数计算步骤包括第一解决方案确定步骤，基于梯度向量作为迭代方法执行第一解决方案确定步骤，并且在迭代期间不初始化状态变量向量。最佳设计方法适用于结构变化。

54. 发明申请

US20090269734A1 METHOD FOR DETERMINATION OF RECOGNITION SPECIFICITY OF VIRUS FOR RECEPTOR SUGAR CHAIN 审中-公开
标题翻译：用于确定受体糖链的病毒识别特异性的方法
公开(公告)号：US20090269734A1
公开(公告)日：2009-10-29
申请号：US12427636
申请日：2009-04-21
申请人： Yasuo SUZUKI , Akira Asai , Takashi Suzuki , Ilpal Jwa , Takeomi Murata , Taiichi Usui , Sou Takeda , Kohei Yamada , Toshitada Noguchi
发明人： Yasuo SUZUKI , Akira Asai , Takashi Suzuki , Ilpal Jwa , Takeomi Murata , Taiichi Usui , Sou Takeda , Kohei Yamada , Toshitada Noguchi
IPC分类号： C12Q1/70 , C07K9/00 , C12P19/18
CPC分类号： G01N33/548 , G01N33/56983
摘要： A method in which the recognition specificity of a virus for a receptor sugar chain can be easily determined with a simple instrument or apparatus is provided. In a method for determining the recognition specificity of a virus for a receptor sugar chain or for determining the change in a host infected in accordance with the mutation of virus comprising, a sample of the virus is brought into contact with a support having a polymer with sialo-oligosaccharide immobilized on the surface thereof; and the degree of binding therein is assayed to determine the recognition specificity of said virus for said receptor sugar chain and to determine the change in a host range. The method is suitable for the surveillance of virus.
摘要翻译：提供了利用简单的仪器或装置容易地确定病毒对受体糖链的识别特异性的方法。在用于确定受体糖链病毒的识别特异性或根据病毒突变感染的宿主的变化的方法中，使病毒样品与具有聚合物的载体接触，唾液酸寡糖固定在其表面上; 并测定其中的结合程度以确定所述病毒对所述受体糖链的识别特异性并确定宿主范围的变化。该方法适用于病毒监控。

55. 发明申请

US20090181362A1 METHOD FOR DETERMINATION OF RECOGNITION SPECIFICITY OF VIRUS FOR RECEPTOR SUGAR CHAIN 审中-公开
标题翻译：用于确定受体糖链的病毒识别特异性的方法
公开(公告)号：US20090181362A1
公开(公告)日：2009-07-16
申请号：US12065469
申请日：2006-08-29
申请人： Yasuo Suzuki , Akira Asai , Takashi Suzuki , Kazuya Hidari , Takeomi Murata , Taiichi Usui , Sou Takeda , Kohei Yamada , Toshitada Noguchi
发明人： Yasuo Suzuki , Akira Asai , Takashi Suzuki , Kazuya Hidari , Takeomi Murata , Taiichi Usui , Sou Takeda , Kohei Yamada , Toshitada Noguchi
IPC分类号： C12Q1/70 , C07H7/02
CPC分类号： G01N33/548 , G01N33/56983
摘要： A method is provided in which the recognition specificity of a virus for a receptor sugar chain can be easily determined with a simple instrument or apparatus. This method for determining the recognition specificity of a virus for a receptor sugar chain or for determining the change in a host infected in accordance with the mutation of virus includes the steps of bringing a sample of the virus into contact with a support having a polymer with sialo-oligosaccharide immobilized on the surface thereof; and assaying the degree of binding therein to determine the recognition specificity of the virus for the receptor sugar chain and to determine the change in a host range. The method is suitable for the surveillance of a virus.
摘要翻译：提供了一种方法，其中可以用简单的仪器或装置容易地确定病毒对受体糖链的识别特异性。用于确定病毒对受体糖链的识别特异性或用于根据病毒突变确定受感染宿主的变化的方法包括以下步骤：使病毒样品与具有聚合物的载体接触唾液酸寡糖固定在其表面上; 并测定其中的结合程度以确定病毒对受体糖链的识别特异性并确定宿主范围的变化。该方法适用于病毒监控。

56. 发明授权

US07235830B2 Semiconductor device and process for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07235830B2
公开(公告)日：2007-06-26
申请号：US11260197
申请日：2005-10-28
申请人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
发明人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
IPC分类号： H01L29/76
CPC分类号： H01L29/78696 , H01L21/76264 , H01L21/76281 , H01L29/1054 , H01L29/66742 , H01L29/78687 , Y10S438/933 , Y10S438/938
摘要： The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.
摘要翻译：本发明提供一种半导体器件，包括：半导体层（3）; 经由栅极绝缘膜（10）形成在所述半导体层（3）上的栅电极（11）; 以及形成在所述半导体层（3），所述栅极绝缘膜（10）和所述栅电极（11）的侧壁的一个或多个的第一绝缘膜（13）。其中所述第一绝缘膜（13）覆盖所述栅极绝缘膜（10）表面的一部分。根据半导体装置，可以抑制隔离边缘处的漏电流，从而可以提高可靠性。

57. 发明授权

US07203606B2 Information processing apparatus for numerically analyzing incompressible fluid and method therefor 失效
标题翻译：用于数值分析不可压缩流体的信息处理装置及其方法
公开(公告)号：US07203606B2
公开(公告)日：2007-04-10
申请号：US11275142
申请日：2005-12-15
申请人： Kota Nakano , Akira Asai
发明人： Kota Nakano , Akira Asai
IPC分类号： G01F17/00
CPC分类号： G06F17/5018 , G06F2217/16
摘要： During an incompressible fluid movement, three consecutive times during the movement of the fluid are called first, second, and third times in time order, calculation is performed with two different types of lattices for the first and third times and for the second time. Momentum and mass density at the first time are temporally developed to the third time in accordance with a conservation law by using an upwind velocity field. A pressure at the second time is determined so that a velocity field derived from momenta at the third time satisfies an incompressibility condition, and the field at the third time is corrected by adding a change in momentum caused by a pressure term using the determined pressure. This prevents pressure vibration and avoids the complexity of advective term calculation.
摘要翻译：在不可压缩的流体运动期间，在流体运动期间连续三次被称为第一次，第二次和第三次的时间顺序，对于第一次和第三次以及第二次以两种不同类型的格架进行计算。第一次的动量和质量密度通过使用逆风速度场根据守恒定律在时间上发展到第三次。确定第二次的压力使得从第三次的动量导出的速度场满足不可压缩条件，并且通过使用所确定的压力加上由压力项引起的动量变化来校正第三次的场。这可以防止压力振动，避免平流项计算的复杂性。

58. 发明授权

US07049681B2 Bipolar transistor device having phosphorous 失效
标题翻译：具有磷的双极晶体管器件
公开(公告)号：US07049681B2
公开(公告)日：2006-05-23
申请号：US10972442
申请日：2004-10-26
申请人： Teruhito Ohnishi , Akira Asai
发明人： Teruhito Ohnishi , Akira Asai
IPC分类号： H01L29/02
CPC分类号： H01L29/66242 , H01L29/7378
摘要： A Si1-xGex layer 111b functioning as the base composed of an i-Si1-xGex layer and a p+ Si1-xGex layer is formed on a collector layer 102, and a Si cap layer 111a as the emitter is formed on the p+ Si1-xGex layer. An emitter lead electrode 129, which is composed of an n− polysilicon layer 129b containing phosphorus in a concentration equal to or lower than the solid-solubility limit for single-crystal silicon and a n+ polysilicon layer 129a containing phosphorus in a high concentration, is formed on the Si cap layer 111a in a base opening 118. The impurity concentration distribution in the base layer is properly maintained by suppressing the Si cap layer 111a from being doped with phosphorus (P) in an excessively high concentration. The upper portion of the Si cap layer 111a may contain a p-type impurity. The p-type impurity concentration distribution in the base layer of an NPN bipolar transistor is thus properly maintained.
摘要翻译：作为由i-Si 1-x Ge x x构成的基底的Si 1-x Ge 2 x层111b， / SUB层，并且在集电极层102上形成有Si + 1-xSi Ge层，并且Si覆盖层111a 因为发射极形成在p + 1 Si 1-x Ge层上。发射极引线电极129，其由含有等于或低于单晶硅的固溶度极限的磷的N +和/或多个多晶硅层129b组成，在基底开口118中的Si覆盖层111a上形成含有高浓度的磷的多晶硅层129a。通过抑制Si覆盖层111a的基底层中的杂质浓度分布适当地保持以过高浓度的磷（P）掺杂。 Si覆盖层111a的上部可以含有p型杂质。因此，适当地维持NPN双极晶体管的基极层中的p型杂质浓度分布。

59. 发明授权

US06987072B2 Method of producing semiconductor crystal 失效
标题翻译：半导体晶体的制造方法
公开(公告)号：US06987072B2
公开(公告)日：2006-01-17
申请号：US11009020
申请日：2004-12-13
申请人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
发明人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
IPC分类号： H01L21/31
CPC分类号： H01L21/324 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/02664 , H01L21/322 , Y10S438/933
摘要： A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.
摘要翻译：一种制造半导体晶体的方法，其具有在基板（201）上形成含有碳原子的半导体晶体层（202）和除了碳以外的至少一种第IV族元素的第一工序，第二工序用于添加能够与氧反应的半导体晶体层（202）的杂质，以及通过使碳与杂质反应来除去半导体结晶层（202）中所含的碳原子的第三工序。该方法可以制造其中间隙碳原子的浓度令人满意地降低的半导体晶体衬底，从而当将衬底应用于半导体器件时获得优异的电性能。

60. 发明授权

US06927118B2 Method of fabricating a bipolar transistor utilizing a dry etching and a wet etching to define a base junction opening 失效
标题翻译：使用干蚀刻和湿蚀刻来制造双极晶体管以限定基极结开口的方法
公开(公告)号：US06927118B2
公开(公告)日：2005-08-09
申请号：US10695478
申请日：2003-10-29
申请人： Ken Idota , Teruhito Ohnishi , Akira Asai
发明人： Ken Idota , Teruhito Ohnishi , Akira Asai
IPC分类号： H01L21/331 , H01L21/8249 , H01L29/737 , H01L21/8222
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/7378
摘要： The present invention discloses a process of fabricating a semiconductor device comprising the steps of: forming a collector layer of a first conductivity type at a portion of a surface of a semiconductor substrate; forming a collector opening portion in a first insulating layer formed on the semiconductor substrate; epitaxially growing, on the semiconductor substrate of the collector opening portion, a semiconductor layer including a layer of a second conductivity type constituting a base layer; sequentially layering, on the semiconductor substrate, an etching stopper layer against dry etching and a masking layer against wet etching; exposing a part of the etching stopper layer by removing a part of the masking layer by means of dry etching; and by subjecting the exposed etching stopper layer to a wet etching treatment using the remaining masking layer as a mask, forming a base junction opening portion through the etching stopper layer and the masking layer.
摘要翻译：本发明公开了一种制造半导体器件的方法，包括以下步骤：在半导体衬底的表面的一部分处形成第一导电类型的集电极层; 在形成在所述半导体衬底上的第一绝缘层中形成集电极开口部分; 在集电体开口部的半导体基板上外延生长构成基底层的具有第二导电类型的层的半导体层; 在半导体衬底上依次层叠抗干蚀刻的蚀刻停止层和抗蚀刻的掩模层; 通过干蚀刻去除一部分掩模层来暴露一部分蚀刻阻挡层; 并且通过使用剩余的掩模层作为掩模对暴露的蚀刻停止层进行湿法蚀刻处理，通过蚀刻停止层和掩模层形成基底连接开口部分。

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