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51. 发明专利

DE60203413D1 未知
公开(公告)号：DE60203413D1
公开(公告)日：2005-04-28
申请号：DE60203413
申请日：2002-10-25
申请人： APPLIED MATERIALS INC
发明人： CHEN LING , KU VINCENT , WU DIEN-YEH , CHUNG HUA , OUYE ALAN , NAKASHIMA NORMAN , CHANG MEI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/768

52. 发明专利

AT177877T 未知
公开(公告)号：AT177877T
公开(公告)日：1999-04-15
申请号：AT87311196
申请日：1987-12-18
申请人： APPLIED MATERIALS INC
发明人： WONG JERRY YUEN KUI , CHANG MEI , MAYDAN DAN , WANG DAVID NIN-KOU , MAK ALFRED W S
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/762 , H01L21/306 , H01J37/32
摘要： A process for etching single crystal silicon, polysilicon, silicide and polycide using iodide gas chemistry, is disclosed. The iodide gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.

53. 发明专利

SG42803A1 Utilization of sih4 soak purging deposition processes 未知
公开(公告)号：SG42803A1
公开(公告)日：1997-10-17
申请号：SG1995002044
申请日：1995-09-27
申请人： APPLIED MATERIALS INC
发明人： TSENG MENG CHU , CHANG MEI , SRINIVAS RAMANUJAPURAM A , RINNEN KLAUS-DIETER , EIZENBERG MOSHE , TELFORD SUSAN
IPC分类号： C23C16/02 , C23C16/42 , C23C16/56 , C23C16/44 , H01L21/205 , H01L21/28 , H01L21/285 , C23C16/52
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4 into the chamber. Preferably, WSix is deposited on a semiconductor wafer using a mixture comprising WF6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus for practicing methods of the invention includes a chamber, means for depositing a material, such as WSix, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH4.

54. 发明专利

AT133006T 未知
公开(公告)号：AT133006T
公开(公告)日：1996-01-15
申请号：AT88305874
申请日：1988-06-27
申请人： APPLIED MATERIALS INC
发明人： LAW KAM SHING , LEUNG CISSY , TANG CHING CHEONG , COLLINS KENNETH STUART , CHANG MEI , WONG JERRY YUEN KUI , WANG DAVID NIN-KOU
IPC分类号： C23C16/44 , C23C16/509 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/314 , C23C16/50 , H01L21/00

55. 发明专利

DE68921234T2 未知
公开(公告)号：DE68921234T2
公开(公告)日：1995-06-22
申请号：DE68921234
申请日：1989-04-25
申请人： APPLIED MATERIALS INC
发明人： CHENG DAVID , MAYDAN DAN , SOMEKH SASSON , STALDER KENNETH R , ANDREWS DANA L , CHANG MEI , WHITE JOHN M , WONG JERRY YUEN KUI , ZEITLIN VLADIMIR J , WANG DAVID NIN-KOU
IPC分类号： H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , C23F4/00
摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

56. 发明专利

DE3750502T2 未知
公开(公告)号：DE3750502T2
公开(公告)日：1995-01-12
申请号：DE3750502
申请日：1987-12-18
申请人： APPLIED MATERIALS INC
发明人： CHENG DAVID , MAYDAN DAN , SOMEKH SASSON , STALDER KENNETH R , ANDREWS DANA L , CHANG MEI , WHITE JOHN M , WONG JERRY YUEN KUI , ZEITLIN VLADIMIR J , WANG DAVID NIN-KOU
IPC分类号： H01L21/302 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/3065 , C23C16/50 , H01L21/306

57. 发明专利

AT96184T 未知
公开(公告)号：AT96184T
公开(公告)日：1993-11-15
申请号：AT88307501
申请日：1988-08-12
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI , WHITE JOHN M , WANG DAVID NIN-KOU , MAYDAN DAN
IPC分类号： C23C16/50 , C23C16/30 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/509
摘要： An inlet gas manifold (11) for a vacuum deposition chamber (10) incorporates inlet apertures (31) which increase in diameter or cross-section transverse to the direction of gas flow (22). The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia The inlet manifold (11) containing the increasing-diameter gas inlet holes (31) provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

58. 发明授权

US6270859B2 Plasma treatment of titanium nitride formed by chemical vapor deposition 失效
标题翻译：通过化学气相沉积形成的氮化钛的等离子体处理
公开(公告)号：US6270859B2
公开(公告)日：2001-08-07
申请号：US4985698
申请日：1998-03-27
申请人： APPLIED MATERIALS INC
发明人： ZHAO JUN , SINHA ASHOK , TEPMAN AVI , CHANG MEI , LUO LEE , SCHREIBER ALEX , SAJOTO TALEX , WOLFF STEFAN , DORNFEST CHARLES , DANEK MICHAL
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/34
CPC分类号： C23C16/45508 , C23C16/4411 , C23C16/4412 , C23C16/4585 , C23C16/46 , C23C16/5096 , C23C16/54 , H01J37/3244 , H01J37/32477 , H01J37/32834 , H01J2237/2001
摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.
摘要翻译：特别是当在膜的热沉积之后执行等离子体处理步骤时，通过化学气相沉积将氮化钛沉积在具有针对氮化钛的导电性质的几个设计特征的室中的方法。优选地，在后期等离子体处理期间，仅向喷头对电极施加RF功率，而不对支撑晶片的基座施加RF功率，从而防止晶片的充电。

59. 发明授权

US4854263B1 Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films 失效
标题翻译：用于增加气体离解和介电膜PECVD的入口歧管和方法
公开(公告)号：US4854263B1
公开(公告)日：1997-06-17
申请号：US8542487
申请日：1987-08-14
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI , WANG DAVID N K , WHITE JOHN M , MAYDAN DAN
IPC分类号： C23C16/50 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/455 , C23C16/5096

60. 发明授权

US5043299B1 Process for selective deposition of tungsten on semiconductor wafer 失效
标题翻译：在半导体晶片上选择性沉积钨的工艺
公开(公告)号：US5043299B1
公开(公告)日：1997-02-25
申请号：US44448589
申请日：1989-12-01
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI , WANG DAVID N
IPC分类号： C23C16/02 , C23C16/04 , C23C16/06 , C23C16/54 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/00 , H01L21/02 , H01L21/203 , H01L21/302
CPC分类号： H01L21/76879 , H01L21/28562 , Y10S148/051 , Y10S438/906 , Y10S438/908

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