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51. 发明公开

EP2116632A3 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 审中-公开
标题翻译：致孔剂前体porogenhaltige并使用它们，以提供多孔的低介电常数Organosilikatglasschichten的方法
公开(公告)号：EP2116632A3
公开(公告)日：2010-08-25
申请号：EP09159354.1
申请日：2009-05-04
申请人： Air Products and Chemicals, Inc.
发明人： Vrtis, Raymond Nicholas , O'Neill, Mark Leonard , Vincent, Jean Louise , Lukas, Aaron Scott , Haas, Mary Kathryn
IPC分类号： C23C16/40 , C23C16/56 , H01L21/316 , C03C3/04 , C23C16/30
CPC分类号： C23C16/401 , C23C16/30 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/31695
摘要： A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C 4 to C 14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.

52. 发明公开

EP1691410A3 Method for defining a feature on a substrate 审中-公开
标题翻译：一种用于在衬底上定义结构的方法
公开(公告)号：EP1691410A3
公开(公告)日：2009-09-30
申请号：EP06003024.4
申请日：2006-02-15
申请人： Air Products and Chemicals, Inc.
发明人： O'Neill, Mark Leonard , Weigel, Scott Jeffrey , Rennie, David Barry , Roberts, David Allen , Karwacki, Eugene Joseph, Jr. , Mac Dougall, James Edward
IPC分类号： H01L21/768 , H01L21/311 , H01L21/316 , H01L21/312 , G03F7/09
CPC分类号： H01L21/76826 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/3121 , H01L21/31695 , H01L21/76808 , H01L21/7682 , H01L2221/1047
摘要： An improved method of forming a feature in a semiconductor substrate is described. The method comprises the steps of forming a porous dielectric layer on a substrate; removing a first portion of the porous dielectric layer to form a first etched region; filling the first etched region with a porous sacrificial light absorbing material having dry etch properties similar to those of the porous dielectric layer; removing a portion of the porous sacrificial light absorbing material and a second portion of the porous dielectric layer to form a second etched region; and removing the remaining portions of the porous sacrificial light absorbing material by employing a process, wherein the porous sacrificial light absorbing material has an etch rate greater than that of the porous dielectric layer in the process.

53. 发明公开

EP2048700A2 Antireflective coatings 审中-公开
标题翻译： Antireflektionsbeschichtungen
公开(公告)号：EP2048700A2
公开(公告)日：2009-04-15
申请号：EP08166504.4
申请日：2008-10-13
申请人： Air Products and Chemicals, Inc.
发明人： Vrtis, Raymond Nicholas , O'Neill, Mark Leonard , Johnson, Andrew David
IPC分类号： H01L21/027 , H01L21/311 , H01L21/316 , H01L21/318
CPC分类号： H01L21/31144 , C23C16/30 , G03F7/091 , H01L21/02126 , H01L21/0214 , H01L21/02203 , H01L21/02216 , H01L21/02219 , H01L21/02274 , H01L21/02304 , H01L21/0276 , H01L21/31629 , H01L21/31633 , H01L21/318
摘要： A method of forming a feature in a substrate comprising the steps of: forming a dielectric layer on a substrate; forming an antireflective coating over the dielectric layer; forming a photoresist pattern over the antireflective coating; etching the dielectric layer through the patterned photoresist; and removing the antireflective coating and the photoresist, wherein the antireflective coating is a film represented by the formula Si v O w C x N u H y F z , wherein v+w+x+u+y+z = 100%, v is from 1 to 35 atomic%, w is from 1 to 65 atomic%, x is from 5 to 80 atomic%, u is from 0 to 50 atomic %, y is from 10 to 50 atomic% and z is from 0 to 15 atomic%, wherein the antireflective coating is formed by the chemical vapor deposition of a composition comprising (1) at least one precursor selected from an organosilane, an organosiloxane, and an aminosilane; and (2) a hydrocarbon, and wherein the hydrocarbon is substantially not removed from the antireflective coating.
摘要翻译：一种在衬底中形成特征的方法，包括以下步骤：在衬底上形成电介质层; 在所述电介质层上形成抗反射涂层; 在抗反射涂层上形成光致抗蚀剂图案; 通过图案化的光致抗蚀剂蚀刻介电层; 并且去除所述抗反射涂层和所述光致抗蚀剂，其中所述抗反射涂层是由式Si v O w C x N u H y F z表示的膜，其中v + w + x + u + y + z = 100％，v 为1〜35原子％，w为1〜65原子％，x为5〜80原子％，u为0〜50原子％，y为10〜50原子％，z为0〜15 原子％，其中所述抗反射涂层通过化学气相沉积形成，所述组合物包含（1）至少一种选自有机硅烷，有机硅氧烷和氨基硅烷的前体; 和（2）烃，其中烃基本上不从抗反射涂层中除去。

54. 发明公开

EP2048699A2 Antireflective coatings for photovoltaic applications 审中-公开
标题翻译： AntireflektionsbeschichtungenfürPhotovoltaik-Anwendungen
公开(公告)号：EP2048699A2
公开(公告)日：2009-04-15
申请号：EP08166488.0
申请日：2008-10-13
申请人： Air Products and Chemicals, Inc.
发明人： Hurley, Patrick Timothy , Ridgeway, Robert Gordon , Vrtis, Raymond Nicholas , O'Neill, Mark Leonard , Johnson, Andrew David
IPC分类号： H01L21/027 , H01L21/308 , H01L21/314 , H01L21/318 , H01L31/00
CPC分类号： C23C16/30 , H01L21/3148 , H01L31/02168 , H01L31/0236 , H01L31/02363 , H01L31/18 , Y02E10/50 , Y02E10/547
摘要： A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula Si v C x N u H y F z , wherein v+x+u+y+z = 100%, v is from 1 to 35 atomic%, x is from 5 to 80 atomic%, u is from 0 to 50 atomic %, y is from 10 to 50 atomic% and z is from 0 to 15 atomic%.
摘要翻译：提供了一种用于制造包括包括pn结的硅衬底的光伏器件的方法，该方法包括以下步骤：通过化学气相沉积在含硅化合物的组合物的化学气相沉积中在硅衬底的至少一个表面上形成非晶碳化硅抗反射涂层选自有机硅烷，氨基硅烷及其混合物的前体，其中非晶碳化硅抗反射涂层是由式Si v C x N u H y F z表示的膜，其中v + x + u + y + z = 100％，v为1〜35原子％，x为5〜80原子％，u为0〜50原子％，y为10〜50原子％，z为0〜15原子％。

55. 发明公开

EP1923905A2 Method and Composition for Restoring Dielectric Properties of Porous Dielectric Materials 审中-公开
标题翻译：一种用于恢复多孔Dielektrizitätsmaterialien的介电性质的方法和组合物
公开(公告)号：EP1923905A2
公开(公告)日：2008-05-21
申请号：EP07120803.7
申请日：2007-11-15
申请人： Air Products and Chemicals, Inc.
发明人： Tamboli, Dnyanesh Chandrakant , Rao, Madhukar Bhaskara , O'Neill, Mark Leonard
IPC分类号： H01L21/02
CPC分类号： H01L21/3105 , H01L21/0206 , H01L21/02093
摘要： The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.
摘要翻译：本发明提供用于恢复的多孔电介质材料的介电性能的方法。该方法包括提供一基板，其包括多孔电介质材料，其包含的污染物包括至少一种包埋液具有表面张力，worin多孔介电材料，其包含所述至少一种污染物具有第一介电常数的至少一个层。基板与修复流体包含水和具有表面张力确实的至少一种化合物接触，小于在多孔介电材料的至少一层，所述至少一个夹带液体的表面张力。在干燥时，该多孔介电材料具有第二介电常数比所做的第一介电常数和修复流体的所有成分在干燥后除去低。

56. 发明公开

EP1848032A2 Materials and methods of forming controlled voids in dielectric layers 失效转让
标题翻译：材料和在电介质层中的制剂的受控腔方法
公开(公告)号：EP1848032A2
公开(公告)日：2007-10-24
申请号：EP07251624.8
申请日：2007-04-18
申请人： Air Products and Chemicals, Inc.
发明人： Vrtis, Raymond Nicholas , O'Neill, Mark Leonard , Vincent, Jean Louise , Wu, Dingjun , Bitner, Mark Daniel , Karwacki, Eugene Joseph, Jr. , Lukas, Aaron Scott
IPC分类号： H01L21/768 , H01L21/31
CPC分类号： H01L21/764 , H01L21/02115 , H01L21/02126 , H01L21/02172 , H01L21/02203 , H01L21/02205 , H01L21/02263 , H01L21/02274 , H01L21/02282 , H01L21/30604 , H01L21/31695 , H01L21/423 , H01L21/7682 , H01L2221/1047
摘要： An air gap is formed by: depositing a sacrificial material on a substrate; depositing a composite layer, containing a porogen material, over the sacrificial material; removing of the porogen material from the composite layer to form a porous layer; and removing the sacrificial material to provide the air gap. The sacrificial material precursor is selected from an organic porogen, silicon, and a polar solvent soluble metal oxide, and is removed by, as appropriate, applying energy or contacting the layered substrate with a removal medial, such as a fluorine containing reagent or polar solvent, which diffuses through the porous layer.

57. 发明公开

EP1795627A1 CVD method for forming a porous low dielectric constant SiOCH film 审中-公开
标题翻译： Verfahren zurErhöhungdes Abscheidungsanteils chemischer Gasphasenabscheidungsfilme
公开(公告)号：EP1795627A1
公开(公告)日：2007-06-13
申请号：EP07000816.4
申请日：2004-03-29
申请人： Air Products and Chemicals, Inc.
发明人： Vrtis, Raymond Nicholas , Lukas, Aaron Scott , O'Neill, Mark Leonard , Vincent, Jean Louise , Bitner, Mark Daniel , Karwacki, Eugene Joseph, Jr. , Peterson, Brian Keith
IPC分类号： C23C16/40 , C23C16/56 , H01L21/312 , H01L21/316
CPC分类号： H01L21/02118 , C23C16/30 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02318 , H01L21/3122 , H01L21/31633 , H01L21/31695
摘要： Organosilica glass and organic polymeric films useful for electronic devices and methods for making same are disclosed herein. In one embodiment of the present invention, there is provided a method for enhancing the chemical vapor deposition of a film comprising an organic species comprising: providing a substrate within a reaction chamber; introducing into the chamber gaseous chemical reagents comprising an organic precursor having carbon and hydrogen bonds contained therein and a rate enhancer wherein the rate enhancer is at least one member selected from the group consisting of an oxygen-containing compound; a peroxide compound having the formula R 1 OOR 2 ; a peracid compound having the formula R 3 C(O)OC(O)R 4 ; a fluorine-containing compound; and a heavy inert gas; and applying energy to the chemical reagents in the reaction chamber sufficient to induce the reaction of the reagents and deposit the film upon at least a portion of the substrate.
摘要翻译：有机硅玻璃和用于电子器件的有机聚合物膜及其制备方法在此公开。在本发明的一个实施方案中，提供了一种用于增强包含有机物质的膜的化学气相沉积的方法，包括：在反应室内提供基材; 向室内引入包含其中含有碳和氢键的有机前体的气态化学试剂和速率增强剂，其中速率增强剂是选自含氧化合物中的至少一种; 具有式R 1 OOR 2的过氧化物; 具有式R 3 C（O）OC（O）R 4的过酸化合物; 含氟化合物; 和重惰性气体; 并向反应室中的化学试剂施加足以引起试剂反应并将膜沉积在基底的至少一部分上的能量。

58. 发明公开

EP1619267A3 Method for removing carbon-containing residues from a substrate 审中-公开
标题翻译：碳质残余物的从衬底的方法，以除去
公开(公告)号：EP1619267A3
公开(公告)日：2006-06-14
申请号：EP05015747.8
申请日：2005-07-20
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Johnson, Andrew David , Subawalla, Hoshang , Ji, Bing , Vrtis, Raymond Nicholas , Karwacki, Eugene Joseph, Jr. , Ridgeway, Robert Gordon , Maroulis, Peter James , O'Neill, Mark Leonard , Lukas, Aaron Scott , Motika, Stephen Andrew
IPC分类号： C23C16/44 , H01L21/00 , B08B7/00
CPC分类号： C23C16/4405
摘要： A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

59. 发明公开

EP1420439A2 Non-thermal process for forming porous low dielectric constant films 有权转让
标题翻译：为生产多孔低介电常数膜的非热过程
公开(公告)号：EP1420439A2
公开(公告)日：2004-05-19
申请号：EP03025722.4
申请日：2003-11-10
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Lukas, Aaron Scott , Bitner, Mark Daniel , Vrtis, Raymond Nicholas , O'Neill, Mark Leonard , Vincent, Jean Louise , Karwacki, Eugene Joseph, Jr.
IPC分类号： H01L21/316
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/31695
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
摘要翻译：低介电材料和膜，其包括相同havebeen标识为改进的性能当作为在集成电路层间电介质，以及用于制备方法相同的方法使用。在本发明的某些实施方案中，提供了一种低温工艺以多相膜，由此形成一个多孔薄膜 - 内除去至少一种成孔相的至少一部分。作为造孔相可通过曝光被移除以至少一个能量源，优选紫外线光源，在非氧化性气氛。

60. 发明公开

EP1260606A2 Low dielectric constant material and method of processing by cvd 审中-公开
标题翻译：。。。。。。。。。。。。。。。。
公开(公告)号：EP1260606A2
公开(公告)日：2002-11-27
申请号：EP02010229.9
申请日：2002-05-16
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： O'Neill, Mark Leonard , Peterson, Brian Keith , Vincent, Jean Louise , Vrtis, Raymond Nicholas
IPC分类号： C23C16/30 , C23C16/40 , C03C3/062 , H01L21/316
CPC分类号： H01L21/02131 , C03C3/045 , C03C14/008 , C23C16/30 , C23C16/401 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/3127 , H01L21/316 , H01L21/31633
摘要： Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula Si v O w C x H y F z , where v+w+x+y+z = 100%, v is from 10 to 35 atomic%, w is from 10 to 65 atomic% y is from 10 to 50 atomic%, x is from 1 to 30 atomic%, z is from 0.1 to 15 atomic%, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.
摘要翻译：有机氟硅酸盐玻璃膜含有有机物质和无机氟，不含大量的碳氟化合物。优选的膜由式SivOwCxHyFz表示，其中v + w + x + y + z = 100％，v为10至35原子％，w为10至65原子％y为10至50原子％，x 为1〜30原子％，z为0.1〜15原子％，x / z任选大于0.25，基本上没有氟与碳键合。 CVD方法包括：（a）在真空室内提供衬底; （b）在真空室中引入气态试剂，包括提供供气的气体，供氧气体和至少一种选自有机硅烷和有机硅氧烷的前体气体; 和（c）向室中的气态试剂施加能量以诱导气态试剂的反应并在基底上形成膜。

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