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    • 51. 发明公开
    • 마우스 패드 폰
    • 鼠标垫电话
    • KR1020040054850A
    • 2004-06-26
    • KR1020020081162
    • 2002-12-18
    • 이형규
    • 이형규
    • H04M1/00
    • PURPOSE: A mouse pad phone is provided to conveniently talk over the telephone in the middle of a work with a computer and a mouse. CONSTITUTION: A main mouse pad(200) has a circuit for executing a telephone function inside, and has a plurality of buttons for a telephone call. A telephone line connecting terminal is connected with the circuit of the main mouse pad, and is connected with an external telephone line. A microphone earphone connecting terminal is installed to be connected with a microphone earphone so that a user talks over the telephone. A sound output connecting terminal is installed to be connected with an external sound apparatus so that the user can hear a sound inputted from the external sound apparatus. A hook button starts or terminates the telephone call.
    • 目的:提供鼠标垫手机,方便用电脑和鼠标在电话中间通话。 构成:主鼠标垫(200)具有用于在内部执行电话功能的电路,并且具有用于电话呼叫的多个按钮。 电话线连接端子与主鼠标垫的电路连接,并与外部电话线连接。 安装麦克风耳机连接端子以与麦克风耳机连接,以便用户通过电话进行通话。 安装声音输出连接端子以与外部声音装置连接,从而用户可以听到从外部声音装置输入的声音。 挂机按钮启动或终止电话呼叫。
    • 52. 发明公开
    • 레이저 활성화를 이용한 화합물 반도체 소자의 제조방법
    • 通过激光激活制备化合物半导体器件的方法
    • KR1020040046644A
    • 2004-06-05
    • KR1020020074634
    • 2002-11-28
    • 이형규
    • 이형규이창영송지헌
    • H01L21/263
    • PURPOSE: A method for fabricating a compound semiconductor device by laser activation is provided to improve annealing efficiency and reduce the thermal budget of a SiC substrate by activating the impurities implanted into the SiC substrate at a room temperature for a time interval of 20-100 nano second and by obviating the necessity of a high-temperature heat treatment. CONSTITUTION: A sacrificial oxide layer(105) is formed on the SiC substrate(100) of the first conductivity type. Impurities of the second conductivity type are implanted into a predetermined portion of the SiC substrate covered with the sacrificial oxide layer. The impurities of the second conductivity type implanted into the SiC substrate are activated to form a junction region(140). The sacrificial oxide layer is removed. An ohmic contact layer is formed on the junction region. The impurities of the second conductivity type are activated by irradiation of laser.
    • 目的:提供一种通过激光激活制造化合物半导体器件的方法,通过激活在室温下注入到SiC衬底中的杂质,以20-100纳米的时间间隔来提高退火效率并降低SiC衬底的热量预算 并且避免了高温热处理的必要性。 构成:在第一导电类型的SiC衬底(100)上形成牺牲氧化物层(105)。 将第二导电类型的杂质注入覆盖有牺牲氧化物层的SiC衬底的预定部分中。 注入到SiC衬底中的第二导电类型的杂质被激活以形成结区域(140)。 去除牺牲氧化物层。 在接合区域上形成欧姆接触层。 第二导电类型的杂质通过激光的照射而被激活。
    • 60. 发明授权
    • 진공 라미네이터
    • 真空层压板
    • KR101079951B1
    • 2011-11-04
    • KR1020100039299
    • 2010-04-28
    • 이형규
    • 이형규
    • H05K3/00B32B37/10H05K3/46
    • PURPOSE: A vacuum laminator is provided to transfer a substrate to a desirable position by using a rib roller and a servo motor. CONSTITUTION: A top vacuum chamber(1) is combined with a lower vacuum chamber(2). The lower vacuum chamber vertically moves by a lower vacuum chamber cylinder action. An upper un-winder shaft(3a) loads a top carrier film. A lower un-winder shaft(3b) loads a bottom carrier film. An upper re-winder shaft rolls the top carrier film. A lower re-winder shaft rolls the bottom carrier film. A rib roller grips the top and bottom carrier films.
    • 目的:提供真空层压机,通过使用罗纹辊和伺服电机将基板转移到期望的位置。 构成:顶部真空室(1)与下部真空室(2)组合。 下部真空室通过较低的真空室气缸动作垂直移动。 上部无卷绕轴(3a)装载顶部载体膜。 下部未卷绕轴(3b)装载底部载体膜。 上部再卷绕轴滚动顶部载体膜。 下部再卷绕轴滚动底部载体膜。 肋辊夹住顶部和底部载体膜。