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    • 51. 发明公开
    • 포토레지스트용 스트리퍼 조성물
    • 剥离器组合物
    • KR1020070114037A
    • 2007-11-29
    • KR1020070050844
    • 2007-05-25
    • 주식회사 엘지화학
    • 한희박민춘김경준서성우권혁준안경호최병규민성준황지영
    • G03F7/42H01L21/027H01L21/306
    • G03F7/425H01L21/0272
    • A photoresist stripper composition, a method for stripping a photoresist containing aluminum copper or aluminum and copper on a substrate by using the composition, and a method for preparing a liquid crystal display device and a semiconductor device by using the stripping method are provided to remove a photoresist layer without damaging an under conductive layer or an insulating layer even if isopropanol is not used. A photoresist stripper composition comprises at least one corrosion inhibitor selected from the group consisting of compounds represented by the formulae 1, 2 and 3; a water-soluble organic amine compound in an amount of 2-50 times to the amount of the corrosion inhibitor by weight; and a polar solvent, wherein R1 and R2 are identical or different each other and are independently H or OH; R3 is H, a t-butyl group, a carboxyl group, a methyl ester group, an ethyl ester group, or a propyl ester group; r4 is H or a C1-C4 alkyl group; and R5 and R6 are identical or different each other and are independently a C1-C4 hydroxyalkyl group.
    • 光致抗蚀剂剥离剂组合物,通过使用该组合物在基材上剥离含有铝铜或铝和铜的光致抗蚀剂的方法,以及通过使用剥离法制备液晶显示装置和半导体装置的方法, 即使不使用异丙醇也不会损坏下导电层或绝缘层。 光致抗蚀剂剥离剂组合物包含至少一种选自由式1,2和3表示的化合物的腐蚀抑制剂; 水溶性有机胺化合物,其量为防腐剂重量的2-50倍; 和极性溶剂,其中R 1和R 2彼此相同或不同,并且独立地为H或OH; R3是H,叔丁基,羧基,甲酯基,乙酯基或丙酯基; R 4是H或C 1 -C 4烷基; 并且R 5和R 6彼此相同或不同,并且独立地为C 1 -C 4羟烷基。
    • 52. 发明公开
    • 구리 몰리브덴 배선용 세정제
    • 铜箔薄膜清洁剂
    • KR1020070107242A
    • 2007-11-07
    • KR1020060039463
    • 2006-05-02
    • 주식회사 엘지화학
    • 서성우박민춘박찬효권혁준안경호한희민성준최병규
    • C11D1/40C11D3/28C11D11/00C11D3/00H01L21/02
    • C11D1/40C11D3/0073C11D3/28C11D11/0047C11D11/0088H01L21/02041
    • A cleaner for copper/molybdenum wiring is provided to prevent corrosion of the wiring and to remove copper oxide particles while not adversely affecting smoothness of the surface of the interconnections, and to allow cleaning of interconnections leaving no residual anti-corrosive agent. A cleaner for copper/molybdenum wiring comprises: (1) 0.1-5 wt% of at least one compound selected from an alkyl amine represented by the following formula 1, amino acid represented by the following formula 2 and organic acid represented by the following formula 3; and (2) the balance amount of deionized water. In formula 1, each of a and b represents an amine group, and n is an integer of 1-10. In formula 2, R is an amino group-containing hydroxy group, (CH2)1~10-COOH or C1-C10 alkyl group. In formula 3, each of c, d and e independently represents H, OH, (CH2)1~10-COOH, C1-C10 alkyl group or halogen atom.
    • 提供一种用于铜/钼布线的清洁器,以防止布线的腐蚀和去除氧化铜颗粒,同时不会不利地影响互连表面的平滑度,并且允许清洁不留下残留的防腐蚀剂的互连。 用于铜/钼布线的清洁剂包括:(1)0.1-5重量%的至少一种选自由下式1表示的烷基胺,下式2表示的氨基酸和由下式表示的有机酸的化合物 3; 和(2)去离子水的余量。 在式1中,a和b各自表示胺基,n为1-10的整数。 在式2中,R是含氨基的羟基,(CH 2)1〜10-COOH或C 1 -C 10烷基。 在式3中,c,d和e各自独立地表示H,OH,(CH 2)1〜10 -COOH,C 1 -C 10烷基或卤素原子。
    • 53. 发明公开
    • 포토레지스트용 스트리퍼 조성물
    • 剥离器组合物
    • KR1020060117667A
    • 2006-11-17
    • KR1020050040115
    • 2005-05-13
    • 주식회사 엘지화학
    • 박찬효하용준박민춘변요한권혁준한희안경호서성우
    • G03F7/42
    • Photoresist stripper composition containing particular anti-corrosion agent with specific structure is provided to conveniently and clearly remove modified and cured photoresist film caused by photolithography and wet etching process at high or low temperature, and minimize corrosion of insulating film. The photoresist stripper composition consists of: (a) 5 to 50wt.% of water soluble organic amine compound; (b) 20 to 70wt.% of aprotic alkyleneglycol monoalkylether compound with boiling point more than 150deg.C; (c) 0.01 to 70wt.% of polar non-aprotic solvent; and (d) an anti-corrosive agent selected from compounds represented by formula(1). In the formula(1), R1, R2, R3 and R4 are hydrogen, hydroxy group or alkyl group having carbon atoms ranging from 1 to 4, and R5 and R6 are independently hydroxyalkyl group having carbon atoms ranging from 1 to 4.
    • 提供含有特定结构特定防腐蚀剂的光刻胶剥离剂组合物,以便在高温或低温下通过光刻和湿蚀刻工艺方便且清楚地除去由光刻和湿蚀刻工艺引起的改性和固化的光致抗蚀剂膜,并使绝缘膜的腐蚀最小化。 光致抗蚀剂剥离剂组合物由以下组成:(a)5〜50重量%的水溶性有机胺化合物; (b)20〜70重量%的沸点超过150℃的非质子性亚烷基二醇单烷基醚化合物; (c)0.01〜70重量%极性非质子溶剂; 和(d)选自式(1)表示的化合物的抗腐蚀剂。 在式(1)中,R 1,R 2,R 3和R 4为氢,羟基或碳原子数为1至4的烷基,R 5和R 6独立地为碳原子数为1至4的羟基烷基。
    • 54. 发明公开
    • 포토레지스트용 스트리퍼 조성물
    • 包含水溶性有机胺化合物的光电子剥离剂组合物,聚丙烯酸甘油单烷基醚化合物,极性溶剂,剥离助剂和腐蚀抑制剂,使用组合物的光电离子的剥离方法和使用该方法制备的LCD装置或半导体引发剂
    • KR1020040098751A
    • 2004-11-26
    • KR1020030030987
    • 2003-05-15
    • 주식회사 엘지화학
    • 하용준서성우박민춘윤선영
    • G03F7/42
    • PURPOSE: Provided are a photoresist stripper composition which is suitable for both dipping method and single wafer treatment method, can strip the photoresist layer modified by an etching process at a low temperature for a short time and does not damage a conductive layer and an insulating layer comprising copper or copper alloy even without using isopropanol as a neutral cleaning solution, a stripping method of photoresist using the composition and a liquid crystal display device or semiconductor device prepared by the method. CONSTITUTION: The photoresist stripper composition comprises 5-50 wt% of a water-soluble organic amine compound; 20-70 wt% of a protic alkylene glycol monoalkyl ether compound having a boiling point of 150 deg.C or more; 0.01-70 wt% of a polar aprotic solvent; 0.01-5 wt% of at least one kind of stripping accelerator selected from the group consisting of the compounds represented by the formula 1; and 0.01-5 wt% of at least one kind of corrosion inhibitor selected from the group consisting of the compounds represented by the formula 2, wherein R1 is H or a C1-C4 alkyl group; R2 and R3 are independently a C1-C4 hydroxyalkyl group; R4 and R5 are independently H or OH; and R6 is H, a t-butyl group or a carboxyl group. Preferably the water-soluble organic amine compound is at least one selected from the group consisting of a primary aminoalcohol, a secondary aminoalcohol and a tertiary aminoalcohol.
    • 目的:提供适用于浸渍方法和单晶片处理方法的光致抗蚀剂剥离剂组合物,可以在短时间内在低温下剥离通过蚀刻工艺修饰的光致抗蚀剂层,并且不会损坏导电层和绝缘层 包括铜或铜合金,即使不使用异丙醇作为中性清洗溶液,使用该组合物的光致抗蚀剂的剥离方法和通过该方法制备的液晶显示装置或半导体器件。 构成:光致抗蚀剂剥离剂组合物包含5-50重量%的水溶性有机胺化合物; 20-70重量%的沸点为150℃以上的质子性亚烷基二醇单烷基醚化合物; 0.01-70重量%极性非质子溶剂; 0.01-5重量%的选自由式1表示的化合物的至少一种剥离促进剂; 和0.01-5重量%的选自由式2表示的化合物的至少一种腐蚀抑制剂,其中R 1是H或C 1 -C 4烷基; R2和R3独立地是C1-C4羟烷基; R4和R5独立地是H或OH; R6为H,叔丁基或羧基。 优选地,水溶性有机胺化合物是选自伯氨基醇,仲氨基醇和叔氨基醇中的至少一种。
    • 55. 发明公开
    • 구리 배선용 포토레지스트 스트리퍼 조성물
    • 包含水溶性有机胺化合物的光电子剥离剂组合物,有机溶剂和腐蚀抑制剂,使用组合物的光电离子的剥离方法和使用该方法制备的LCD装置或半导体引发剂
    • KR1020040098750A
    • 2004-11-26
    • KR1020030030986
    • 2003-05-15
    • 주식회사 엘지화학
    • 하용준서성우박민춘윤선영
    • G03F7/42
    • PURPOSE: Provided are a photoresist stripper composition for copper wire which is suitable for both dipping method and single wafer treatment method, can strip the photoresist layer modified by an etching process at a low temperature for a short time and does not damage a conductive layer and an insulating layer comprising copper or copper alloy, a stripping method of photoresist using the composition and a liquid crystal display device or semiconductor device prepared by the method. CONSTITUTION: The photoresist stripper composition comprises 5-50 parts by weight of a water-soluble organic amine compound; 20-95 parts by weight of an organic solvent having a boiling point of 150 deg.C or more; and 0.01-5 parts by weight of at least one kind of corrosion inhibitor selected from the group consisting of compounds represented by the formula 1 or 2, wherein R1 is H or a C1-C12 alkyl group; R2 is H or a C1-C5 alkyl group; and R3 is H, a hydroxyl group or a thiol group. Preferably the water-soluble organic amine compound is at least one selected from the group consisting of a primary aminoalcohol, a secondary aminoalcohol and a tertiary aminoalcohol.
    • 目的:提供适用于浸渍方法和单晶片处理方法的铜线用光致抗蚀剂剥离剂组合物,可以在短时间内在低温下剥离通过蚀刻工艺修饰的光致抗蚀剂层,并且不会损坏导电层, 包含铜或铜合金的绝缘层,使用该组合物的光致抗蚀剂的剥离方法以及通过该方法制备的液晶显示装置或半导体器件。 构成:光致抗蚀剂剥离剂组合物包含5-50重量份的水溶性有机胺化合物; 20〜95重量份沸点为150℃以上的有机溶剂; 和0.01-5重量份选自由式1或2表示的化合物组成的组中的至少一种腐蚀抑制剂,其中R 1是H或C 1 -C 12烷基; R2是H或C1-C5烷基; R3为H,羟基或硫醇基。 优选地,水溶性有机胺化合物是选自伯氨基醇,仲氨基醇和叔氨基醇中的至少一种。
    • 56. 发明公开
    • 광추출층
    • 光提取层
    • KR1020140069738A
    • 2014-06-10
    • KR1020120137401
    • 2012-11-29
    • 주식회사 엘지화학
    • 박민춘
    • H01L51/52H05B33/22
    • H01L51/5259H01L51/5243H01L51/5275H01L51/56H01L2251/56H05B33/22
    • The present application relates to a light extraction layer, a manufacturing method thereof, a substrate for an organic electronic device, and the organic electronic device. The light extraction layer according to the embodiment of the present application is formed with a thin thickness by a phase separated structure and obtains a high light extraction effect even though a small amount of inorganic particles are included. Also, the light extraction layer is patterned. For example, a part of the light extraction layer which is not sealed by the substrate and a sealing substrate is removed by a photolithography method when the light extraction layer is applied to the organic light emitting device. Thereby, oxygen and/or moisture inputted through the light extraction layer are prevented.
    • 本申请涉及光提取层,其制造方法,有机电子器件用基板和有机电子器件。 根据本申请的实施例的光提取层通过相分离结构形成薄的厚度,并且即使包括少量的无机颗粒也能获得高的光提取效果。 此外,对光提取层进行图案化。 例如,当将光提取层施加到有机发光器件时,通过光刻法去除未被基板密封的一部分光提取层和密封基板。 由此,防止了通过光提取层输入的氧气和/或水分。