专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

52. 发明申请

US20050064702A1 Interconnects forming method and interconnects forming apparatus 有权
标题翻译：互连形成方法和互连形成装置
公开(公告)号：US20050064702A1
公开(公告)日：2005-03-24
申请号：US10896014
申请日：2004-07-22
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76849 , H01L21/76819 , H01L21/7685 , Y10S438/976 , Y10T29/41
摘要： The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, light exposure or the like processing for the formation of interconnect recesses in the production of multi-level interconnects, can improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and can enhance the reliabilityof the device. The interconnects-formingmethod, including: providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.
摘要翻译：本发明提供一种互连形成方法和互连形成装置，其可以最小化在制造多层互连中形成互连凹槽的蚀刻，曝光等处理中的处理精度的降低，互连的电迁移电阻，而不损害互连的电性能，并且可以提高器件的可靠性。所述互连形成方法包括：在形成在基板的表面中的绝缘膜中提供互连凹槽; 在互连凹槽中嵌入互连材料，同时在绝缘膜的表面上形成互连材料的金属膜; 除去互连凹部中的金属材料以外的多余的金属材料，使基板表面变平，从而形成互连件; 在互连的暴露表面上选择性地形成导电材料的第一保护膜; 在具有如此形成的第一保护膜的基板的表面上形成第二保护膜; 在具有如此形成的第二保护膜的基板的表面上形成层间绝缘膜; 并平坦化层间绝缘膜的表面。

IPRDB

热门服务

关于我们

友情链接

联系方式