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51. 发明授权

US08994565B2 Analog to digital conversion apparatus with a reduced number of ADCs 有权
标题翻译：具有ADC数量减少的模数转换装置
公开(公告)号：US08994565B2
公开(公告)日：2015-03-31
申请号：US14055874
申请日：2013-10-16
申请人： STMicroelectronics, Srl.
发明人： Gianluigi Forte , Dino Costanzo , StelloMatteo Bille'
IPC分类号： H03M1/00 , H03M1/12
CPC分类号： H03M1/122
摘要： An analog to digital conversion includes a multiplexor circuit for receiving analog input signals and, responsive to a select input, an analog to digital converter circuit to convert a selected analog signal into a digital signal, a conversion starting device to send a conversion start signal on the basis of a trigger event, the conversion starting device being responsive to a select input, a sequencer to control the analog to digital converter circuitry to execute one sequence conversion on the basis of one conversion sequence instruction, and a FIFO register block to receive conversion sequence instructions and being able to queue each new received conversion sequence instruction if an actual conversion sequence is in progress and to control the sequencer to execute a new sequence conversion instruction after the conversion sequence is executed.
摘要翻译：模数转换器包括用于接收模拟输入信号的多路复用器电路，并且响应于选择输入，模数转换器电路将所选择的模拟信号转换成数字信号，转换启动装置将转换开始信号发送到触发事件的基础，转换启动装置响应于选择输入，定序器，用于控制模数转换器电路，以基于一个转换顺序指令执行一个序列转换;以及FIFO寄存器块，用于接收转换序列指令，并且如果实际转换序列正在进行，并且能够对每个新的接收到的转换序列指令进行排队，并且在执行转换序列之后控制定序器执行新的序列转换指令。

52. 发明申请

US20130207781A1 SECURITY SYSTEM FOR AT LEAST AN INTEGRATED CIRCUIT, SECURE INTEGRATED CIRCUIT CARD, AND METHOD OF SECURE WIRELESS COMMUNICATIONS 有权
标题翻译：用于至少集成电路的安全系统，安全集成电路卡和安全无线通信的方法
公开(公告)号：US20130207781A1
公开(公告)日：2013-08-15
申请号：US13763707
申请日：2013-02-10
申请人： STMicroelectronics Srl
发明人： ALBERTO PAGANI , Giovanni Girlando
IPC分类号： G06K7/00
CPC分类号： G06K7/00 , G06K7/10178 , G06K19/025 , G06K19/072 , G06K19/07327 , G06K19/07336 , G06K19/07735 , G06K19/07756 , G06K19/07771 , G06K19/07775 , G06K19/07779
摘要： A security system includes an integrated circuit and a transceiver/transponder circuit. The integrated circuit includes an antenna for communicating with the transceiver/transponder circuit. An inhibiting element is associated with the integrated circuit for inhibiting communications with the transceiver/transponder circuit and for securing the data contained in the integrated circuit. The inhibiting element is an electromagnetic inhibiting element. The security system further includes a coupling element associated with the antenna of the integrated circuit for temporarily deactivating the electromagnetic inhibiting element to allow communications between the integrated circuit and the transceiver/transponder circuit.
摘要翻译：安全系统包括集成电路和收发器/应答器电路。集成电路包括用于与收发器/应答器电路进行通信的天线。禁止元件与用于禁止与收发器/应答器电路的通信并用于保护集成电路中包含的数据的集成电路相关联。抑制元件是电磁抑制元件。安全系统还包括与集成电路的天线相关联的耦合元件，用于暂时停用电磁抑制元件以允许集成电路和收发器/应答器电路之间的通信。

53. 发明专利

FR2908919A1 CIRCUIT ET PROCEDE POUR PRODUIRE UNE TENSION DE REFERENCE DANS DES DISPOSITIFS MEMOIRE COMPORTANT UNE MATRICE DE CELLULES NON VOLATILES. 未知
公开(公告)号：FR2908919A1
公开(公告)日：2008-05-23
申请号：FR0759104
申请日：2007-11-16
申请人： STMICROELECTRONICS SRL SOCIETA
发明人： CONTE ANTONIO , MICCICHE MARIO , LO GIUDICE GIANBATTISTA , DI MARTINO ALBERTO , SBERNO GIAMPIERO
IPC分类号： G11C16/14 , G05F3/24 , G11C16/16
摘要： L'invention concerne un circuit générateur de tension de référence (Vcg) sur une borne de sortie (Out) connectée à une matrice de cellules mémoire non volatiles comprenant un moyen de conversion (SE) ; un moyen de comparaison (12) ; et au moins une cellule de référence (xN) insérée entre un noeud commun (40) et une première référence de tension (V1). Selon l'invention, chaque cellule de référence (xN) comprend une borne de contact (34) avec une région de grille flottante des cellules de référence (xN) connectée à un premier bloc de polarisation (25), ayant une borne d'entrée (In4) connectée à la borne de sortie (Out) du circuit générateur (100) et étant apte à polariser périodiquement la borne de contact de grille flottante (34) à une tension de polarisation d'une deuxième référence de tension (V2).

54. 发明授权

EP2445098B1 Control device for a resonant converter. 有权
公开(公告)号：EP2445098B1
公开(公告)日：2019-08-07
申请号：EP11186057.3
申请日：2011-10-21
申请人： STMicroelectronics Srl
发明人： Adragna, Claudio
IPC分类号： H02M3/337

55. 发明授权

EP1932336B1 IMAGE STABILIZING DEVICE OF THE MEMS TYPE, IN PARTICULAR FOR IMAGE ACQUISITION USING A DIGITAL-IMAGE SENSOR 有权转让
公开(公告)号：EP1932336B1
公开(公告)日：2018-12-26
申请号：EP06793538.7
申请日：2006-09-14
申请人： STMicroelectronics Srl
发明人： PASOLINI, Fabio , FONTANELLA, Luca
IPC分类号： G01P15/18 , G01P15/08 , G01P15/125 , H04N5/232
CPC分类号： G01P15/125 , G01P15/18 , G01P2015/082 , G01P2015/0831 , H04N5/23248 , H04N5/23258 , H04N5/23287
摘要： A device for stabilizing images acquired by a digital-image sensor includes a motion-sensing device, for detecting quantities correlated to pitch and yaw movements of the digital-image sensor, and a processing unit, connectable to the digital-image sensor for receiving a first image signal and configured for extracting a second image signal from the first image signal on the basis of the quantities detected by the motion-sensing device. The motion-sensing device includes a first accelerometer and a second accelerometer.

56. 发明授权

EP1577952B1 Method of making a high voltage insulated gate field-effect transistor 有权转让
公开(公告)号：EP1577952B1
公开(公告)日：2018-07-04
申请号：EP04100960.6
申请日：2004-03-09
申请人： STMicroelectronics Srl
发明人： Depetro, Riccardo , Manzini, Stefano
IPC分类号： H01L29/78 , H01L29/08 , H01L29/417 , H01L21/336
CPC分类号： H01L29/66636 , H01L21/26586 , H01L29/086 , H01L29/0878 , H01L29/41766 , H01L29/456 , H01L29/66681 , H01L29/66696 , H01L29/7816
摘要： An insulated-gate transistor, includes a semiconductor material layer having a front surface, a body region, an insulated gate disposed over the body region with interposition of a gate dielectric, and a source and drain region, the source region formed in the body region and the drain region formed in the semiconductor material layer. The source and drain regions are spaced apart from each other by a channel zone in a portion of the body region underlying the insulated gate, and a charge carriers drift portion of the semiconductor material layer between the channel zone and the drain region, the insulated gate extending over the charge carriers drift portion. The drain region is located at a depth compared to the front surface for causing charge carriers to move in the charge carriers drift portion away from an interface between the semiconductor material layer and the gate dielectric.

57. 发明公开

EP3261141A1 PHASE-CHANGE MEMORY CELL, AND METHOD FOR MANUFACTURING THE PHASE-CHANGE MEMORY CELL 审中-公开
标题翻译：相变存储器单元以及制造相变存储器单元的方法
公开(公告)号：EP3261141A1
公开(公告)日：2017-12-27
申请号：EP16425063.1
申请日：2016-06-24
申请人： STMicroelectronics Srl
发明人： Zuliani, Paola , Confalonieri, Gianluigi , Gilardini, Annalisa , Prelini, Carlo Luigi
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2463 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/144 , H01L45/16 , H01L45/1683
摘要： The proposed phase-change memory cell comprises a substrate (2) housing a selection transistor, an electrical insulation layer (10) having a conductive through via (11a) electrically coupled to a first electrode (4) of the transistor, a heater element (34) including a first portion in electrical contact with the conductive through via and a second portion that extends orthogonal to the first portion, a first protection element (32) extending on the first and second portions of the heater element, a second protection element (40) extending in direct lateral contact with the first portion of the heater element and with the first protection element, and a phase-change region (50) extending over the heater element in electrical and thermal contact therewith.
摘要翻译：所提出的相变存储器单元包括容纳选择晶体管的衬底（2），具有电耦合到晶体管的第一电极（4）的导电通孔（11a）的电绝缘层（10），加热器元件包括与所述导电通孔电接触的第一部分和与所述第一部分正交延伸的第二部分，在所述加热器元件的第一部分和第二部分上延伸的第一保护元件（32），第二保护元件（ 40）与所述加热器元件的第一部分和所述第一保护元件直接横向接触地延伸，以及在所述加热器元件上方延伸的相变区域（50），所述相变区域与所述加热器元件电接触并热接触。

58. 发明授权

EP2462050B1 PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY 有权
标题翻译：用于制造具有隐蔽空腔的MEMS器件的工艺及由此获得的MEMS器件
公开(公告)号：EP2462050B1
公开(公告)日：2017-11-08
申请号：EP10737938.0
申请日：2010-08-05
申请人： STMicroelectronics Srl
发明人： CORONA, Pietro , LOSA, Stefano , GELMI, Ilaria , CAMPEDELLI, Roberto
IPC分类号： B81C1/00
CPC分类号： B81C1/00476 , B81B2201/0264 , B81B2203/0109 , B81B2203/0127 , B81C1/00047 , B81C2201/0109

59. 发明授权

EP1624286B1 Micro-electro-mechanical sensor with force feedback loop 有权转让
标题翻译：具有力反馈回路的微机电传感器
公开(公告)号：EP1624286B1
公开(公告)日：2017-10-04
申请号：EP04425600.6
申请日：2004-08-03
申请人： STMicroelectronics Srl
发明人： Caminada, Carlo , Lasalandra, Ernesto , Prandi, Luciano
IPC分类号： G01C19/5726
CPC分类号： G01C19/5726

60. 发明授权

EP1617178B1 Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof 有权转让
标题翻译：一种微机电结构与电隔离区，以及它们的制备方法
公开(公告)号：EP1617178B1
公开(公告)日：2017-04-12
申请号：EP04425514.9
申请日：2004-07-12
申请人： STMicroelectronics Srl
发明人： Spinola Durante, Guido , Sassolini, Simone , Ferrera, Marco , Marchi, Mauro
IPC分类号： G01C19/5769
CPC分类号： G01C19/5769

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