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51. 发明专利

JP2013016805A Substrate treating apparatus and method 有权
标题翻译：基板处理装置和方法
公开(公告)号：JP2013016805A
公开(公告)日：2013-01-24
申请号：JP2012147041
申请日：2012-06-29
申请人： Semes Co Ltd , セメス株式会社SEMES CO., Ltd
发明人： ROH JAMMIN
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/67126 , H01J37/32834 , H01L21/67069 , H01L21/6719
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating apparatus and a method capable of uniformly treating a substrate.SOLUTION: A substrate treating apparatus includes: a process chamber which provides a space in which a substrate is treated; an exhausting pipe which is connected to the process chamber and provides a passage through which a gas is discharged from the process chamber to an outside thereof; a pump installed on the exhausting pipe; and a valve which is installed on the exhausting pipe in the section between the process chamber and the pump, and opens and closes the passage of the exhausting pipe. The valve includes a first plate on which a plurality of exhausting holes are formed and a first driver which moves the first plate so that the plurality of exhausting holes are located on or outside the passage of the exhausting pipe.
摘要翻译：要解决的问题：提供一种能够均匀地处理基板的基板处理装置和方法。解决方案：基板处理装置包括：处理室，其提供处理基板的空间; 排气管，其连接到处理室并提供气体从处理室排放到其外部的通道; 安装在排气管上的泵; 以及在处理室和泵之间的部分中安装在排气管上的阀，并且打开和关闭排气管的通道。所述阀包括形成有多个排气孔的第一板和使所述第一板移动以使得所述多个排气孔位于所述排气管的通道的外侧的第一驱动器。版权所有（C）2013，JPO＆INPIT

52. 发明专利

JP2013016798A Substrate treating apparatus and substrate treating method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2013016798A
公开(公告)日：2013-01-24
申请号：JP2012144065
申请日：2012-06-27
申请人： Semes Co Ltd , セメス株式会社SEMES CO., Ltd
发明人： JUN YU-SUN , KIM WO-YONG , HEO CHAYONG , PARK JONG-SONG
IPC分类号： H01L21/304
CPC分类号： H01L21/67034 , H01L21/67017
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating apparatus for drying a substrate using a supercritical fluid, and a substrate treating method using the apparatus.SOLUTION: The substrate treating apparatus includes: a process chamber 2500 in which an organic solvent remaining on a substrate is dissolved using a fluid provided as a supercritical fluid to dry the substrate; and a recycling unit 4000 in which the organic solvent is separated from the fluid discharged from the process chamber to recycle the fluid. The method for treating a substrate includes the steps of: dissolving an organic solvent remaining on a substrate using a fluid provided as a supercritical fluid to dry the substrate; and separating the organic solvent from the fluid to recycle the fluid.
摘要翻译：要解决的问题：提供一种使用超临界流体干燥基板的基板处理装置和使用该装置的基板处理方法。基板处理装置包括：处理室2500，其中残留在基板上的有机溶剂使用作为超临界流体提供的流体溶解以干燥基板; 以及回收单元4000，其中有机溶剂与从处理室排出的流体分离以再循环流体。用于处理基材的方法包括以下步骤：使用作为超临界流体提供的流体将残留在基材上的有机溶剂溶解以干燥基材; 并将有机溶剂与流体分离以再循环流体。版权所有（C）2013，JPO＆INPIT

53. 发明专利

JP2012033961A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2012033961A
公开(公告)日：2012-02-16
申请号：JP2011236625
申请日：2011-10-28
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： SONG GIL-HUN , PARK PYEONG-JAE
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： H01L21/67051 , H01L21/67034 , H01L21/6708 , H01L21/68714
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device for efficiently washing or etching the upper and lower faces of a substrate.SOLUTION: In a substrate processing device, a substrate is supported and the supported substrate is rotated. At least one of chemical, washing liquid and gas is selectively injected to the lower face of the rotated substrate. At least one of chemical, washing liquid and gas being which are the same as the chemical, the washing liquid and the gas injected to the lower face of the substrate is selectively injected to the upper face of the rotated substrate. By injecting the chemical, the washing liquid or the gas to the lower part of the substrate for washing or etching the lower face of the substrate, processes for the upper face and the lower face of the substrate can be carried out at the same time.
摘要翻译：要解决的问题：提供一种用于有效地洗涤或蚀刻基板的上表面和下表面的基板处理装置。解决方案：在基板处理装置中，支撑基板并旋转支撑的基板。选择性地将化学，洗涤液体和气体中的至少一种注入旋转的基底的下表面。与化学品相同的化学品，洗涤液体和气体中的至少一种，喷射到基底的下表面的洗涤液体和气体被选择性地注入旋转的基底的上表面。通过将化学品，洗涤液或气体注入到用于洗涤或蚀刻衬底的下表面的衬底的下部，可以同时进行衬底的上表面和下表面的处理。版权所有（C）2012，JPO＆INPIT

54. 发明专利

JP2011014906A Method and apparatus for processing substrate 有权
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2011014906A
公开(公告)日：2011-01-20
申请号：JP2010143521
申请日：2010-06-24
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： RHO EUN-SU , BAE JEONG-YONG
IPC分类号： H01L21/027 , H01L21/304
CPC分类号： G03F7/422 , G03F7/423 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for processing a substrate for removing photoresist on the substrate.SOLUTION: The method for processing a substrate includes steps of: arranging a substrate formed with a photoresist film; providing a processing liquid for removing the photoresist film onto the substrate; and providing mist on the substrate to contact the processing liquid. Since the mist reacts with the processing liquid to additionally form a hydroxide radical and, since the mist and the processing liquid perform heat generation reaction, the efficiency in removal of the photoresist can be improved.
摘要翻译：要解决的问题：提供一种处理基板以去除基板上的光致抗蚀剂的方法和装置。解决方案：用于处理基板的方法包括以下步骤：布置形成有光致抗蚀剂膜的基板; 提供用于将光致抗蚀剂膜去除到基底上的处理液体; 并在基板上提供雾以接触处理液体。由于雾与处理液反应以另外形成氢氧根，并且由于雾和处理液进行发热反应，因此可以提高光致抗蚀剂的除去效率。

55. 发明专利

JP2009295982A Chemical flow method, method for manufacturing integrated circuit element using the same, and device 有权
标题翻译：化学流动方法，使用其制造集成电路元件的方法和装置
公开(公告)号：JP2009295982A
公开(公告)日：2009-12-17
申请号：JP2009133420
申请日：2009-06-02
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： YEO SEUNG CHUL
IPC分类号： H01L21/306 , B08B3/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To reduce bending of a substrate for manufacturing an integrated circuit element. SOLUTION: When a part of the substrate bends by dipping of the substrate or flow of chemicals, chemicals stored in a part of the substrate or chemicals caused to flow to a part of the substrate are made to flow to the outside of a bath so that force acts in the opposite direction of force to be applied to a part of the substrate so that a part of the substrate bends. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：减少用于制造集成电路元件的基板的弯曲。解决方案：当衬底的一部分通过浸渍基底或化学物质流动而弯曲时，使存储在基底的一部分中的化学品或引起流到基底的一部分的化学物质流入到使得力作用在相反的力方向上以施加到基底的一部分，使得基底的一部分弯曲。版权所有（C）2010，JPO＆INPIT

56. 发明专利

JP2009158925A Substrate processing apparatus, and substrate transfer method using the same 有权
标题翻译：基板处理装置，以及使用其的基板转印方法
公开(公告)号：JP2009158925A
公开(公告)日：2009-07-16
申请号：JP2008284227
申请日：2008-11-05
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： KIM DUK-SIK , LEE JOON-JAE
IPC分类号： H01L21/677
CPC分类号： H01L21/67769 , H01L21/67178 , H01L21/67745 , H01L21/67766 , H01L21/67778
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate transfer method using the same. SOLUTION: In the substrate processing apparatus 10, an interface unit transfers substrates between a first processing unit 30 and a second processing unit (exposure unit) 60, of a multi-layer structure. The interface unit is provided with substrate accommodating sections for carrying a substrate from and to the first processing unit. Buffer sections for preventing substrate transfer congestion are arranged in the interface unit or in the first processing unit. Thereby, the substrate transfer between the first processing unit and the second processing unit (exposure unit), of the multi-layer structure, can be performed more efficiently. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用其的基板处理装置和基板转印方法。解决方案：在基板处理装置10中，接口单元在多层结构的第一处理单元30和第二处理单元（曝光单元）60之间传送基板。接口单元设置有用于从第一处理单元承载基板的基板容纳部。用于防止底物转移拥塞的缓冲部分布置在接口单元或第一处理单元中。由此，可以更有效地进行多层结构的第一处理单元与第二处理单元（曝光单元）之间的基板转印。版权所有（C）2009，JPO＆INPIT

57. 发明专利

JP2009141332A Device and method for feeding ozone-water mixed liquid, and substrate processing apparatus equipped therewith 审中-公开
标题翻译：用于输送臭氧混合液体的装置和方法，以及其中配备的基板处理装置
公开(公告)号：JP2009141332A
公开(公告)日：2009-06-25
申请号：JP2008284699
申请日：2008-11-05
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： OH RAE-TAEK , KIM CHOON-SIK , BAE JEONG-YONG
IPC分类号： H01L21/304
CPC分类号： B01F3/0876 , B01F3/088 , B01F5/0077 , B01F5/061 , B01F15/0429 , B01F2003/04886 , B01F2215/0096 , B08B2203/005 , H01L21/67017
摘要： PROBLEM TO BE SOLVED: To provide a device and method for feeding ozone-water mixed liquid, and to provide a substrate processing apparatus equipped therewith.
SOLUTION: The device for feeding ozone-water mixed liquid is supplied with a processing liquid and an ozone water from each of a processing-liquid supplying line and an ozone-water supplying line. The feeder includes a mixing line to mix the processing liquid and the ozone water for producing the ozone-water mixed liquid within a predetermined concentration, and a distributing line to distribute the ozone-water mixed liquid produced in the mixing line into a processing unit. A mixing valve and a static mixer are provided in the mixing line. The ozone-water mixed liquid in a predetermined concentration is produced and supplied under an in-line mixing method without using a mixing vessel such as a mixing tank.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于供给臭氧水混合液体的装置和方法，并提供配备有其的基板处理装置。解决方案：向臭氧水混合液供给装置，由处理液供给管路和臭氧水供给管路供给处理液和臭氧水。进料器包括混合管线，用于混合处理液体和臭氧水，以产生预定浓度的臭氧水混合液体;以及分配管线，将混合生产线中产生的臭氧水混合液体分配到处理单元中。在混合管路中设置混合阀和静态混合器。在不使用混合槽等混合容器的情况下，以直列混合方式制造预定浓度的臭氧水混合液。版权所有（C）2009，JPO＆INPIT

58. 发明专利

JP2009130353A Substrate treating apparatus 有权
标题翻译：基板处理装置
公开(公告)号：JP2009130353A
公开(公告)日：2009-06-11
申请号：JP2008287905
申请日：2008-11-10
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： PARK GI HONG
IPC分类号： H01L21/027 , G02F1/13 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating apparatus which can control effusion of treating liquid to the outside of a chamber. SOLUTION: The substrate treating apparatus includes: a chamber providing a treatment space of a substrate; a first delivery line arranged in the chamber, extended in a first direction, and in which treating liquid provided from the outside of the chamber to both ends flows; a jetting portion configured to communicate with the first delivery line, extended to the substrate, and jetting the treating liquid toward the substrate; and a drive unit rotating the first delivery line without contacting the first delivery line in order to make the jetting portion swing in a second direction perpendicular to the first direction. Therefore, the substrate treating apparatus uniformly supplies the treating liquid to the whole of the substrate. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够控制处理液体到室外的液体的基板处理装置。基板处理装置包括：提供基板的处理空间的室; 布置在所述腔室中的第一输送管线，沿第一方向延伸，并且其中从所述腔室的外部设置到两端的处理液体流动; 喷射部，被配置为与所述第一输送管线连通，延伸到所述基板，并且将所述处理液体朝向所述基板喷射; 以及驱动单元，其旋转第一输送管线而不接触第一输送管线，以使得喷射部分沿与第一方向垂直的第二方向摆动。因此，基板处理装置将处理液均匀地供给到基板的整体。版权所有（C）2009，JPO＆INPIT

59. 发明专利

JP2009076918A Substrate machining method, spin unit, and substrate machining device using the spin unit 审中-公开
标题翻译：基板加工方法，旋转单元和使用旋转单元的基板加工装置
公开(公告)号：JP2009076918A
公开(公告)日：2009-04-09
申请号：JP2008241478
申请日：2008-09-19
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： SONG GIL-HUN , PARK PYENG-JAE
IPC分类号： H01L21/306 , H01L21/304 , H01L21/683
CPC分类号： H01L21/67051 , H01L21/67034 , H01L21/6708 , H01L21/68714
摘要： PROBLEM TO BE SOLVED: To provide a substrate machining method for efficiently washing or etching the upper and lower faces of a substrate. SOLUTION: In the substrate machining method, the substrate is supported and the supported substrate is rotated. At least one of chemical, washing liquid and gas is selectively injected to the lower face of the rotated substrate. At least one of chemical, washing liquid and gas being the same as the chemical, the washing liquid and the gas injected to the lower face of the substrate is selectively injected to the upper face of the rotated substrate. With the chemical, the washing liquid or the gas injected to the lower part of the substrate for washing or etching the lower face of the substrate, processes for the upper face and the lower face of the substrate can be carried out at the same time. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于有效地洗涤或蚀刻基板的上表面和下表面的基板加工方法。解决方案：在基板加工方法中，支撑基板并旋转支撑的基板。选择性地将化学，洗涤液体和气体中的至少一种注入旋转的基底的下表面。与化学品相同的化学品，洗涤液体和气体中的至少一种，喷射到基底的下表面的洗涤液体和气体被选择性地注入旋转的基底的上表面。通过化学品，洗涤液体或喷射到基材的下部的气体来洗涤或蚀刻基材的下表面，可以同时进行基材的上表面和下表面的处理。版权所有（C）2009，JPO＆INPIT

60. 发明专利

JP2009076916A Apparatus and method of generating ultrasonic vibration, and apparatus and method of cleaning wafer 有权
标题翻译：装置和产生超声波振动的方法，以及装置和清洗方法
公开(公告)号：JP2009076916A
公开(公告)日：2009-04-09
申请号：JP2008241476
申请日：2008-09-19
申请人： Semes Co Ltd , セメス株式会社Semes Co., Ltd.
发明人： AHN YOUNG-KI , JEONG JAE-JEONG , SUNG BO-RAM-CHAN
IPC分类号： H01L21/304 , H02N2/00
CPC分类号： B08B3/12 , G10K11/02 , H01L21/67051 , H01L21/67057
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for generating ultrasonic vibration and an apparatus, and to provide a method of cleaning wafer. SOLUTION: The apparatus and method of generating ultrasonic vibration are used to allow ultrasonic vibration, produced by a vibration generating section to pass through a substance layer of a carrier member so that the intensity and the direction of the ultrasonic vibration are adjusted; the apparatus and method of cleaning a wafer are used to allow a cleaning liquid to be supplied to a wafer from a cleaning liquid supply section, generate ultrasonic vibration by the cleaning liquid supply section, and allow the ultrasonic vibration to pass through the substance layer of the carrier member so that the intensity and the direction of the ultrasonic vibration are adjusted; and the ultrasonic vibration, having the adjusted intensity and direction, is propagated to the cleaning liquid. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于产生超声波振动的装置和方法以及装置，并提供一种清洁晶片的方法。解决方案：使用超声波振动发生装置和方法，使由振动发生部产生的超声波振动通过载体部件的物质层，从而调整超声波振动的强度和方向; 使用清洗晶片的装置和方法，使清洗液从清洗液供给部供给到晶片，由清洗液供给部产生超声波振动，并使超声波振动通过物质层承载构件，使得超声波振动的强度和方向被调节; 并且具有调节的强度和方向的超声波振动传播到清洁液体。版权所有（C）2009，JPO＆INPIT

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