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51. 发明授权

US06804088B1 Thin film magnetic head, manufacturing method thereof and magnetic storage 失效
标题翻译：薄膜磁头，其制造方法和磁存储
公开(公告)号：US06804088B1
公开(公告)日：2004-10-12
申请号：US09743521
申请日：2001-01-11
申请人： Yoshihiro Nonaka , Haruo Urai , Nobuyuki Ishiwata , Kiyotaka Shimabayashi , Tetsuhiro Suzuki , Shinsaku Saitho , Hiroaki Tachibana , Tamaki Toba
发明人： Yoshihiro Nonaka , Haruo Urai , Nobuyuki Ishiwata , Kiyotaka Shimabayashi , Tetsuhiro Suzuki , Shinsaku Saitho , Hiroaki Tachibana , Tamaki Toba
IPC分类号： G11B5147
CPC分类号： G11B5/3163 , G11B5/3109 , G11B5/3116
摘要： A thin film magnetic head includes a recording pole layer that is divided into a tip portion, a wide rear portion, a flare portion, and a yoke portion as viewed from the air bearing surface (ABS). The tip portion and the wide rear portion directly contact a write gap layer. Part of the wide rear portion has a greater width that the tip portion. The wide rear portion is provided between the tip portion and the flare portion to reduce magnetic reluctance. Accordingly, it is possible to improve the pattern accuracy of the tip portion width by providing the flare portion, which reflects a large quantity of light, far from the ABS, while preventing an increase of the magnetic reluctance.
摘要翻译：薄膜磁头包括从空气轴承表面（ABS）观察时分为尖端部分，宽后部部分，扩口部分和轭部分的记录极层。尖端部分和宽后部直接接触写间隙层。宽后部的一部分具有较大的尖端部分的宽度。宽的后部设置在尖端部分和扩口部分之间以减小磁阻。因此，通过在防止磁阻增加的同时设置反射大量光的喇叭部，能够提高尖端部宽度的图案精度。

52. 发明授权

US06780530B2 Magnetic material having a high saturation magnetic flux density and a low coercive force 有权
标题翻译：具有高饱和磁通密度和低矫顽力的磁性材料
公开(公告)号：US06780530B2
公开(公告)日：2004-08-24
申请号：US10428836
申请日：2003-05-05
申请人： Mikiko Saito , Nobuyuki Ishiwata , Tsutomu Ishi , Hiroaki Honjo , Tamaki Toba , Shinsaku Saito , Yoshihiro Nonaka
发明人： Mikiko Saito , Nobuyuki Ishiwata , Tsutomu Ishi , Hiroaki Honjo , Tamaki Toba , Shinsaku Saito , Yoshihiro Nonaka
IPC分类号： B32B900
CPC分类号： B82Y25/00 , C22C30/00 , G11B5/3109 , G11B5/3967 , H01F10/007 , H01F10/16 , Y10S428/90 , Y10T428/1121 , Y10T428/115
摘要： A magnetic material includes a main component expressed by a general formula CoNiFeX, wherein X is at least one element selected from the group consisting of Cr, Ti, V, Ru, Rh, Pd, Os, Ir and Pt, and wherein weight percentages a, b, c and d of Co, Ni, Fe and X contents, respectively, in the main component are such that 40%≦a≦10%, 5%≦b≦20%, 10%≦c≦30%, and 0%
摘要翻译：磁性材料包括由通式CoNiFeX表示的主要成分，其中X是选自Cr，Ti，V，Ru，Rh，Pd，Os，Ir和Pt中的至少一种元素，其中重量百分数a 主成分中Co，Ni，Fe，X含量的b，c，d分别为40％<= a <= 10％，5％<= b <= 20％，10％<= c <= 30％，0％

53. 发明授权

US06671140B1 Magnetic head using a magnetoresistance effect based on ferromagnetic junction, and magnetic recording/reproducing apparatus using the same 有权
标题翻译：使用基于铁磁结的磁阻效应的磁头和使用该磁头的磁记录/再现装置
公开(公告)号：US06671140B1
公开(公告)日：2003-12-30
申请号：US09576775
申请日：2000-05-23
申请人： Nobuyuki Ishiwata
发明人： Nobuyuki Ishiwata
IPC分类号： G11B5139
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3909 , G11B5/3967 , G11B2005/0002 , G11B2005/0005
摘要： A first magnetic layer (3) is laminated on a magnetic yoke film (2) forming a closed magnetic circuit containing a magnetic gap so as to be magnetically coupled to the magnetic yoke film (2), and a magnetic separation layer (4), a second magnetic layer (5) and an antiferromagnetic layer (6) are laminated on the first magnetic layer (3). Further, a pair of electrodes (1, 7) are formed so that the laminate comprising the above layers is sandwiched between the electrodes. A permanent magnet film 8 is disposed to apply a bias magnetic field to the first magnetic layer (3). The magnetic separation layer (4) is formed of an insulator. Tunnel current is made to flow between the electrodes (1, 7) through the magnetic separation layer (4), and magnetic signals in the magnetic yoke film (2) are detected by using the antiferromagnetic tunnel magnetoresistance effect that the tunnel current is varied in accordance with variation of the difference in the magnetization direction between the first magnetic layer (3) and the second magnetic layer (5).
摘要翻译：第一磁性层（3）层压在磁轭膜（2）上，形成包含磁隙的闭合磁路以与磁轭膜（2）磁耦合，以及磁分离层（4），在第一磁性层（3）上层叠第二磁性层（5）和反铁磁性层（6）。此外，形成一对电极（1,7），使得包含上述层的层压体夹在电极之间。设置永磁体膜8以向第一磁性层（3）施加偏置磁场。磁分离层（4）由绝缘体形成。使隧道电流通过磁分离层（4）在电极（1,7）之间流动，并且通过使用隧道电流变化的反铁磁隧道磁阻效应来检测磁轭膜（2）中的磁信号根据第一磁性层（3）和第二磁性层（5）之间的磁化方向的差异的变化。

54. 发明授权

US6125009A Magnetoresistive effect composite head having a pole containing Co-M 失效
标题翻译：具有包含Co-M的极的磁阻效应复合头
公开(公告)号：US6125009A
公开(公告)日：2000-09-26
申请号：US979179
申请日：1997-11-26
申请人： Nobuyuki Ishiwata , Tsutomu Ishi , Kiyokazu Nagahara , Kazumasa Kumagai
发明人： Nobuyuki Ishiwata , Tsutomu Ishi , Kiyokazu Nagahara , Kazumasa Kumagai
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , G11B5/3109 , G11B5/3113 , G11B5/3156 , G11B5/39
摘要： In a magnetoresistive effect composite head, magnetic shields oppose each other on a slider main body made of a ceramic material through a predetermined gap, and a magnetoresistive effect element is sandwiched and stacked between the magnetic shields with a magnetic spacer layer made of an insulator. A recording head portion uses one of the magnetic shields as a first magnetic pole, and has a second magnetic pole formed on a surface of the first magnetic pole opposite to the magnetoresistive effect element through a magnetic gap, to record information on a recording medium by means of a magnetic field generated in the magnetic gap. The magnetoresistive effect element includes a central region made of a spin-valve element to sense a medium field, and end regions for supplying a bias field and a current to the central region. The second magnetic pole is constituted by a stacked film of first and second magnetic films having different saturation magnetizations. The first and second magnetic films are close to and far from the magnetic gap, respectively. The saturation magnetization of the first magnetic film is set to a value larger than that of the second magnetic film. A method of manufacturing the above head is also disclosed.
摘要翻译：在磁阻效应复合头中，磁屏蔽通过预定间隙在由陶瓷材料制成的滑动器主体上彼此相对，并且磁阻效应元件被夹在磁屏蔽之间并由绝缘体制成的磁隔离层叠置在磁屏蔽之间。记录头部分使用磁屏蔽之一作为第一磁极，并且具有通过磁隙形成在与磁阻效应元件相对的第一磁极的表面上的第二磁极，以通过磁记录介质将信息记录在记录介质上在磁隙中产生的磁场的装置。磁阻效应元件包括由感应中间场的自旋阀元件制成的中心区域和用于向中心区域提供偏置场和电流的端部区域。第二磁极由具有不同饱和磁化的第一和第二磁性膜的叠层膜构成。第一和第二磁性膜分别靠近和远离磁隙。将第一磁性膜的饱和磁化强度设定为大于第二磁性膜的饱和磁化强度。还公开了制造上述头的方法。

55. 发明授权

US6026559A Method for fabricating a complex magnetic head including a reproducing magneto-resistance head 失效
标题翻译：包括再现磁阻头的复磁头的制造方法
公开(公告)号：US6026559A
公开(公告)日：2000-02-22
申请号：US225000
申请日：1999-01-04
申请人： Nobuyuki Ishiwata
发明人： Nobuyuki Ishiwata
IPC分类号： G03G15/06 , G03G15/10 , G11B5/012 , G11B5/31 , G11B5/39 , G11B5/42
CPC分类号： G11B5/3967 , G11B5/012 , G11B5/3116 , G11B5/3163 , Y10T29/49044 , Y10T29/49046
摘要： A fabrication process for a complex magnetic head having a reproducing MR head and a recording ID head comprises the steps of forming the MR head, forming an insulator film on the MR head, forming a photoresist frame on the insulator film, forming a top magnetic pole inside the photoresist frame by plating, trimming the top magnetic pole for defining the end width of the ID head while leaving the photoresist frame, and removing the photoresist frame. The photoresist frame protects the underlying films against the trimming and also protects the top magnetic pole film against an etching solution.
摘要翻译：具有再现MR磁头和记录ID磁头的复磁头的制造方法包括以下步骤：形成MR磁头，在MR磁头上形成绝缘体膜，在绝缘膜上形成光致抗蚀剂框架，形成顶部磁极通过电镀在光致抗蚀剂框架内部，修剪顶部磁极以限定ID头的端部宽度，同时留下光致抗蚀剂框架，并且去除光致抗蚀剂框架。光致抗蚀剂框架保护下面的膜免受修剪，并且还保护顶部磁极膜抵抗蚀刻溶液。

56. 发明授权

US5572391A Magnetic head 失效
标题翻译：磁头
公开(公告)号：US5572391A
公开(公告)日：1996-11-05
申请号：US155185
申请日：1993-11-22
申请人： Nobuyuki Ishiwata
发明人： Nobuyuki Ishiwata
IPC分类号： G11B5/127 , H01F10/26 , H01F10/30 , G11B5/235
CPC分类号： H01F10/30 , G11B5/127 , H01F10/26 , Y10S428/90 , Y10T428/1171
摘要： A magnetic structure is provided with an alumina layer formed between a ceramic substrate and a soft magnetic layer. The alumina layer has a formative energy of oxide lower than that of the soft magnetic layer to protect diffusion of oxygen to the soft magnetic layer, when the soft magnetic layer is heated to be formed. Further, a bonding glass layer is positioned between the ceramic substrate and the alumina layer, and another ceramic substrate is formed on the soft magnetic layer.
摘要翻译：磁性结构设置有形成在陶瓷基板和软磁性层之间的氧化铝层。当软磁性层被加热形成时，氧化铝层具有低于软磁层的氧化层的形成能量，以保护氧扩散到软磁性层。此外，在陶瓷基板和氧化铝层之间设置接合玻璃层，在软磁性层上形成另一陶瓷基板。

57. 发明授权

US09799822B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09799822B2
公开(公告)日：2017-10-24
申请号：US14118093
申请日：2012-04-19
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
IPC分类号： H01L29/82 , H01L43/02 , H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08
摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

58. 发明授权

US08994130B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US08994130B2
公开(公告)日：2015-03-31
申请号：US13145082
申请日：2010-01-28
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
摘要翻译：磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域，并且其中可以切换磁化。第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。

59. 发明授权

US08592930B2 Magnetic memory element, magnetic memory and initializing method 有权
标题翻译：磁记忆元件，磁记忆和初始化方法
公开(公告)号：US08592930B2
公开(公告)日：2013-11-26
申请号：US13504071
申请日：2010-10-21
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/0808 , G11C2013/0083 , H01L27/228
摘要： A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.
摘要翻译：磁存储元件包括：第一磁化自由层; 非磁性层; 参考层; 第一磁化固定层组; 和第一阻挡层。第一磁化自由层由具有垂直磁各向异性的铁磁材料组成，并且包括第一磁化固定区域，第二磁化固定区域和无磁化区域。非磁性层设置在第一磁化自由层附近。参考层由铁磁材料组成并设置在非磁性层上。第一磁化固定层组设置在第一磁化固定区附近。第一阻挡层被设置在第一磁化固定层组和第一磁化固定区之间或第一磁化固定层组中。

60. 发明授权

US08514616B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US08514616B2
公开(公告)日：2013-08-20
申请号：US13201815
申请日：2010-02-15
申请人： Nobuyuki Ishiwata , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki
发明人： Nobuyuki Ishiwata , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.
摘要翻译：磁阻效应元件包括：无磁化层; 与磁化自由层相邻设置的非磁性插入层; 设置在非磁性插入层附近并相对于非磁性插入层与无磁化层相反的磁性插入层; 与磁性插入层相邻地设置并与非磁性插入层相对于磁性插入层相对设置的间隔层; 以及第一磁化固定层，其相对于间隔层设置成与间隔层相邻并且与磁性插入层相对。磁化自由层和第一磁化固定层在大致垂直于膜表面的方向上具有磁化分量。磁化自由层包括两个磁化固定部分和布置在两个磁化固定部分之间的畴壁运动部分。两个磁化固定部分中的一个的磁化和两个磁化固定部分中的另一个的磁化被固定为大致垂直于膜表面的方向彼此大致反平行。畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

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