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    • 52. 发明授权
    • Surface emitting semiconductor laser
    • 表面发射半导体激光器
    • US06650683B2
    • 2003-11-18
    • US10228217
    • 2002-08-27
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • H01S5183
    • H01S5/18394H01S5/0421H01S5/0425H01S5/18311H01S5/18338H01S5/18388H01S2301/166H01S2301/18
    • The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.
    • 本发明提供一种表面发射半导体激光器,包括:半导体衬底,其上依次层叠有下层多层反射镜,有源层区域和上层多层反射镜,其与下层多层反射镜一起贡献 形成一个空腔; 上电极,其设置在所述上​​多层反射镜的上层上,并且设置有形成在所述有源层区域处产生的激光束的发射区域的孔; 以及电流限制部分,其设置在所述上​​电极和所述下多层反射镜之间,并且设置有形成电流路径的孔; 其中确定上限电极的孔径和电流限制部分的孔径直径,使得激光束的高阶横向模式中的空腔的光学损耗与腔室的光损耗之差 激光束的基本横向模式变为最大值附近的值,并且抑制高阶横向模式,并且形成在上电极中形成的孔和电流限制部的孔中的至少一个 成为具有相对于平面中彼此正交的任意两个轴向方向的长轴和短轴的双重对称构型。
    • 54. 发明授权
    • Surface emitting semiconductor laser
    • 表面发射半导体激光器
    • US06529541B1
    • 2003-03-04
    • US09714980
    • 2000-11-20
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • H01S5183
    • H01S5/18394H01S5/0425H01S5/18311H01S5/18355H01S5/18375H01S5/18377H01S5/18388H01S2301/166
    • A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.
    • 一种易于制造且具有高强度基本横向模式光输出功率的表面发射半导体激光器。 表面发射半导体激光器具有半导体衬底,其上依次层叠下n型DBR层,有源层区域,上p型DBR层,作为上层n型DBR层的上层的p侧电极, 型的DBR层,并且作为设置有形成激光束的发射区域的孔的上电极和通过氧化形成的电流限制部分起作用。 基于对应于p侧电极的区域中的空腔的反射率,确定孔的金属孔直径(Wmetal)和电流限制部分的直径(Woxide),使得光学 在激光束的高阶横向模式中的腔的损失和激光束的基本横向模式中的空腔的光学损耗变大。