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51. 发明申请

US20120242747A1 LIQUID EJECTION HEAD AND MANUFACTURING METHOD THEREOF 有权
标题翻译：液体喷射头及其制造方法
公开(公告)号：US20120242747A1
公开(公告)日：2012-09-27
申请号：US13420834
申请日：2012-03-15
申请人： Toshiaki Kurosu , Koji Sasaki , Kouji Hasegawa , Satoshi Ibe , Yoshinori Tagawa
发明人： Toshiaki Kurosu , Koji Sasaki , Kouji Hasegawa , Satoshi Ibe , Yoshinori Tagawa
IPC分类号： B41J2/135 , B23P17/00
CPC分类号： B41J2/1603 , B41J2/1623 , B41J2/1626 , B41J2/1631 , B41J2/1639 , B41J2/1645 , B41J2002/14403
摘要： Provided is a liquid ejection head, including: an ejection orifice forming member having an ejection orifice for ejecting liquid; a substrate having a supply port for supplying the liquid to the ejection orifice; and a filter disposed at a position upstream of the ejection orifice when the liquid is supplied to the ejection orifice, in which the filter includes an opening having a diameter smaller than or equal to a diameter of the ejection orifice, and a tapered shape structure disposed at a position upstream of the opening when the liquid is supplied to the ejection orifice, the tapered shape structure having a distal end directed toward an upstream side.
摘要翻译：提供一种液体喷射头，包括：具有用于喷射液体的喷射孔的喷射口形成部件; 具有用于将液体供给到喷射口的供给口的基板; 以及当所述液体被供应到所述喷射孔时，所述过滤器设置在所述喷射口的上游位置处，所述过滤器包括具有小于或等于所述喷射孔的直径的直径的开口，并且设置有锥形形状结构当液体被供应到喷射口时在开口上游的位置处，锥形形状结构具有朝向上游侧的远端。

52. 发明授权

US08183681B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08183681B2
公开(公告)日：2012-05-22
申请号：US12493502
申请日：2009-06-29
申请人： Shinji Hiramitsu , Hiroyuki Ohta , Koji Sasaki , Masato Nakamura , Osamu Ikeda , Satoshi Matsuyoshi
发明人： Shinji Hiramitsu , Hiroyuki Ohta , Koji Sasaki , Masato Nakamura , Osamu Ikeda , Satoshi Matsuyoshi
IPC分类号： H01L23/48
CPC分类号： H01L23/051 , H01L23/24 , H01L2224/33181
摘要： A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.
摘要翻译：一种半导体器件，包括半导体芯片; 通过第一接合部件接合到所述芯片的下表面的导电基极; 通过第二接合部件将芯片的上表面接合的导电性引线电极; 以及由于芯片和基极之间的热膨胀差异，用于减小在第一接合部件中产生的应力的第一应力消除部件。基极和第一应力消除构件都与第一接合构件的下表面直接接触。从与第一接合构件直接接触的基极形成突起，并且第一应力消除构件围绕突起的周向部分。

53. 发明授权

US08102050B2 Semiconductor device and the method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08102050B2
公开(公告)日：2012-01-24
申请号：US12243477
申请日：2008-10-01
申请人： Koji Sasaki , Kazuo Matsuzaki , Takashi Kobayashi
发明人： Koji Sasaki , Kazuo Matsuzaki , Takashi Kobayashi
IPC分类号： H01L23/48
CPC分类号： H01L24/04 , H01L24/03 , H01L24/48 , H01L2224/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01045 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/04941 , H01L2924/10253 , H01L2924/14 , H01L2924/3511 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing.
摘要翻译：半导体器件包括半导体衬底; 在所述半导体基板上的金属电极布线层压体，所述金属电极布线层叠体以预定的布线图案形成图案; 所述金属电极布线层压体包括底涂阻隔金属层压体和铝或铝合金膜在所述底涂层阻挡金属层压板上; 以及覆盖所述金属电极布线层叠体的有机钝化膜，其中所述阻挡金属层压体为包含夹着氮化钛膜的钛膜的三层层叠体。根据本发明的半导体器件有助于提高在制造过程中暂时暴露的阻挡金属层叠体的部分的耐湿性，仅使用一个钝化膜，有助于防止由裂纹引起的故障和由Si结节引起的故障留在铝合金中增加。

54. 发明申请

US20110222053A1 FRONT PLATE FOR DISPLAY, DISPLAY DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING FRONT PLATE FOR DISPLAY 审中-公开
标题翻译：用于显示的前板，显示装置以及用于制造用于显示的前板的方法和装置
公开(公告)号：US20110222053A1
公开(公告)日：2011-09-15
申请号：US13045152
申请日：2011-03-10
申请人： Makoto Kamikawa , Hideya Satake , Koji Sasaki , Makoto Fukawa , Masahiko Tada , Kazuo Etoh
发明人： Makoto Kamikawa , Hideya Satake , Koji Sasaki , Makoto Fukawa , Masahiko Tada , Kazuo Etoh
IPC分类号： G01J1/04
CPC分类号： G02B5/003 , C03C8/02 , C03C8/14 , C03C2218/119 , C03C2218/365 , G01N21/958 , G02B5/0268 , G02B5/0294 , G02B27/26
摘要： The present invention relates to a front plate for a display comprising: a glass substrate having a first surface and a second surface; and a ceramic layer formed on at least a part of a marginal area of the second surface, wherein the front plate has a difference (ΔT) between a maximum light amount Tmax and a minimum light amount Tmin of transmitted light of 0.4% or smaller, wherein the light amount of transmitted light is measured in a measurement system comprising: a liquid crystal panel that is made to be of entire-surface white-light emission state and is emitting the white light with polarization; a polarizing plate that is set in a crossed Nicol condition with respect to the polarized white light emitted from the liquid crystal panel; and a brightness measurement device arranged in this order, wherein the front plate is disposed between the liquid crystal panel and the polarizing plate so that the second surface faces the liquid crystal panel, while setting the distance between the liquid crystal panel and the front plate to be 50 mm and the distance between the front plate and the brightness measurement device to be 1 m, and wherein the measurement of the transmitted light amount is carried out by measuring the light amount of light transmitted from through the front plate and the polarizing plate over the entire surface of the front plate by the brightness measurement device, and the light amounts in the absence of the front plate under a crossed Nicol condition and a parallel Nicol condition are taken as 0% and 100%, respectively.
摘要翻译：本发明涉及一种用于显示器的前板，包括：具有第一表面和第二表面的玻璃基板; 以及形成在所述第二表面的边缘区域的至少一部分上的陶瓷层，其中所述前板在最大光量Tmax和0.4％的透射光的最小光量Tmin之间具有差异（＆Dgr; T），或其中透射光的光量在测量系统中测量，该测量系统包括：使得具有全表面白光发射状态并且发射偏振的白光的液晶面板; 相对于从液晶面板发射的偏振白光，被设置在交叉的尼科耳状态的偏振片; 以及依次配置的亮度测量装置，其特征在于，在将液晶面板与前板之间的距离设定为液晶面板与前面板之间的距离的同时，将前板配置在液晶面板与偏光板之间，使得第二面朝向液晶面板为50mm，前板与亮度测量装置之间的距离为1μm，透射光量的测量通过测量从前板和偏振片透过的光的光量来进行通过亮度测量装置的前板的整个表面，并且在正交尼科尔条件和平行尼科耳条件下不存在前板的光量分别为0％和100％。

55. 发明授权

US07964492B2 Semiconductor device and automotive AC generator 有权
标题翻译：半导体装置和汽车交流发电机
公开(公告)号：US07964492B2
公开(公告)日：2011-06-21
申请号：US12232676
申请日：2008-09-22
申请人： Osamu Ikeda , Masato Nakamura , Satoshi Matsuyoshi , Koji Sasaki , Shinji Hiramitsu
发明人： Osamu Ikeda , Masato Nakamura , Satoshi Matsuyoshi , Koji Sasaki , Shinji Hiramitsu
IPC分类号： H01L21/44
CPC分类号： H05K3/3463 , B23K35/262 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/29211 , H01L2224/29311 , H01L2224/32225 , H01L2224/32245 , H01L2224/32507 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/13055 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H05K3/244 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01016 , H01L2924/01028 , H01L2924/01032 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.
摘要翻译：半导体器件包括半导体元件，利用第一接合材料接合到半导体元件的第一表面的支撑构件和利用第二接合材料接合到支撑在支撑构件上的半导体元件的第二表面的引线电极，以及还包括制造半导体器件的方法。支撑构件和引线电极的各个连接部分是镀镍的，并且第一和第二接合材料中的每一个是Cu 6 Sn 5含量大于共晶含量的Sn焊料。

56. 发明授权

US07928587B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US07928587B2
公开(公告)日：2011-04-19
申请号：US12105553
申请日：2008-04-18
申请人： Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
发明人： Akihiro Tamba , Kazuhiro Suzuki , Koji Sasaki , Shinji Hiramitsu , Hirokazu Inoue
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/28 , H01L23/29
CPC分类号： H01L24/48 , H01L23/295 , H01L24/06 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/04042 , H01L2224/05553 , H01L2224/05647 , H01L2224/29111 , H01L2224/29116 , H01L2224/2919 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/4846 , H01L2224/48472 , H01L2224/48747 , H01L2224/48799 , H01L2224/48847 , H01L2224/4903 , H01L2224/49111 , H01L2224/4912 , H01L2224/49175 , H01L2224/73265 , H01L2224/83801 , H01L2224/85205 , H01L2224/8592 , H01L2224/92247 , H01L2924/00011 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/19043 , H01L2924/2076 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205
摘要： A power semiconductor module having a surface of the power semiconductor chip and an external circuit pattern connected by an aluminum wire, and sealed with an epoxy resin, wherein wire diameter of the aluminum wire is 0.4±0.05 mmφ, and coefficient of linear expansion of the epoxy resin in a rated temperature range of a module is from 15 to 20 ppm/K.
摘要翻译：一种功率半导体模块，其具有功率半导体芯片的表面和通过铝线连接的外部电路图案，并用环氧树脂密封，其中铝线的线直径为0.4±0.05mm＆phgr;线性膨胀系数在模块的额定温度范围内的环氧树脂为15〜20ppm / K。

57. 发明申请

US20100100353A1 Measuring instrument 有权
标题翻译：测量仪器
公开(公告)号：US20100100353A1
公开(公告)日：2010-04-22
申请号：US12588397
申请日：2009-10-14
申请人： Koji Sasaki
发明人： Koji Sasaki
IPC分类号： G06F15/00 , G01B21/16
CPC分类号： G01B7/012 , G01B21/02
摘要： A measuring instrument includes a main body, a stylus configured to be movable in relation to the main body, an encoder for detecting the amount of displacement of the stylus relative to the main body, a calculating section for calculating a measurement value from the amount of displacement detected by the encoder, a display section for displaying the measurement value calculated by the calculating section, an operation section for issuing a command to the calculating section, and a storage section that stores an effective measurement range larger than a lower limit and smaller than an upper limit of the movement stroke of the stylus. The calculating section makes a determination as to whether or not the amount of displacement detected by the encoder falls within the effective measurement range stored in the storage section and displays the result of such a determination on the display section.
摘要翻译：一种测量仪器，包括主体，被配置为可相对于主体移动的触针，用于检测触针相对于主体的位移量的编码器，用于从测量值计算测量值的计算部分，由编码器检测的位移，用于显示由计算部计算出的测量值的显示部分，用于向计算部分发出命令的操作部分和存储有效测量范围大于下限和小于触针的移动行程的上限。计算部分确定由编码器检测到的位移量是否落入存储在存储部分中的有效测量范围内，并将这种确定的结果显示在显示部分上。

58. 发明申请

US20100037209A1 SOURCE PROGRAM REVIEW PROGRAM, SOURCE PROGRAM REVIEW METHOD, AND SOURCE PROGRAM REVIEW DEVICE 审中-公开
标题翻译：源程序审查计划，源程序审查方法和源程序审查设备
公开(公告)号：US20100037209A1
公开(公告)日：2010-02-11
申请号：US12571843
申请日：2009-10-01
申请人： Koji Sasaki
发明人： Koji Sasaki
IPC分类号： G06F9/44
CPC分类号： G06F11/3604
摘要： A method for reviewing a modified source program includes extracting review-requiring points to be reviewed, by comparing a pre-modification source program as a source program before a modification and a post-modification source program as a source program after the modification, storing a review history indicating whether each of the review-requiring points extracted at the extracting has been reviewed or is unreviewed, outputting information of the review-requiring points extracted in the extracting, associated with the review history stored in the storing and indicating whether each of the review-requiring points has been reviewed or is unreviewed, to a predetermined output unit, and updating the review history stored in the storing when receiving from a predetermined input unit that the review-requiring point outputted as unreviewed by the predetermined output unit has been reviewed.
摘要翻译：一种用于检查修改的源程序的方法，包括通过将修改前的源修改前的源程序作为修改后的源程序和修改后的源程序作为修改后的源程序进行比较，来提取要检查的审查要点，存储审查历史，指示在提取中提取的每个评审要点是否已经被检查或未被查看，输出与在存储中存储的检查历史相关联的提取中提取的审查要点的信息，并指示每个审查要求点已经被审查或未被查看到预定的输出单元，并且当从预定输入单元接收到更新存储在存储器中的审查历史时，已经检查了由预定输出单元未被查看的输出的审查要点。

59. 发明申请

US20090174076A1 SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090174076A1
公开(公告)日：2009-07-09
申请号：US12243477
申请日：2008-10-01
申请人： Koji SASAKI , Kazuo MATSUZAKI , Takashi KOBAYASHI
发明人： Koji SASAKI , Kazuo MATSUZAKI , Takashi KOBAYASHI
IPC分类号： H01L23/48 , H01L21/306
CPC分类号： H01L24/04 , H01L24/03 , H01L24/48 , H01L2224/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01045 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/04941 , H01L2924/10253 , H01L2924/14 , H01L2924/3511 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a semiconductor substrate; a metal electrode wiring laminate on the semiconductor substrate, the metal electrode wiring laminate being patterned with a predetermined wiring pattern; the metal electrode wiring laminate including an undercoating barrier metal laminate and aluminum or aluminum alloy film on the undercoating barrier metal laminate; and organic passivation film covering the metal electrode wiring laminate, wherein the barrier metal laminate is a three-layered laminate including titanium films sandwiching a titanium nitride film. The semiconductor device according to the invention facilitates improving the moisture resistance of the portion of the barrier metal laminate exposed temporarily in the manufacturing process, facilitates employing only one passivation film, facilitates preventing the failures caused by cracks from occurring and the failures caused by Si nodules remaining in the aluminum alloy from increasing.
摘要翻译：半导体器件包括半导体衬底; 在所述半导体基板上的金属电极布线层压体，所述金属电极布线层叠体以预定的布线图案形成图案; 所述金属电极布线层压体包括底涂阻隔金属层压体和铝或铝合金膜在所述底涂层阻挡金属层压板上; 以及覆盖所述金属电极布线层叠体的有机钝化膜，其中所述阻挡金属层压体为包含夹着氮化钛膜的钛膜的三层层叠体。根据本发明的半导体器件有助于提高在制造过程中暂时暴露的阻挡金属层叠体的部分的耐湿性，仅使用一个钝化膜，有助于防止由裂纹引起的故障和由Si结节引起的故障留在铝合金中增加。

60. 发明申请

US20080006856A1 Semiconductor device with back surface electrode including a stress relaxation film 有权
标题翻译：具有包括应力松弛膜的背面电极的半导体装置
公开(公告)号：US20080006856A1
公开(公告)日：2008-01-10
申请号：US11812810
申请日：2007-06-21
申请人： Takashi Kobayashi , Koji Sasaki , Yasuharu Mikoshiba , Masahiro Kato
发明人： Takashi Kobayashi , Koji Sasaki , Yasuharu Mikoshiba , Masahiro Kato
IPC分类号： H01L29/76 , H01L27/082
CPC分类号： H01L29/41708 , H01L29/0834 , H01L29/66333 , H01L29/7395 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/13055 , H01L2924/13091
摘要： A semiconductor device includes a semiconductor substrate which has first and second principal surface regions; an insulated gate structure which is formed in the first principal surface region; a back surface region semiconductor layer which is formed in the second principal surface region and has a thickness of at most 5 μm; an outermost metal film; and a back surface electrode which is formed in the second principal surface region between the back surface region semiconductor layer and the outermost metal film and which is composed of a plurality of films which are laminated and include a stress relaxation film so that false judgment of chip quality based on leakage current measurements during manufacturing is reduced particularly when dust is present and skews leakage current measurements due to strain on the wafer and the piezoelectric effect produced.
摘要翻译：半导体器件包括具有第一和第二主表面区域的半导体衬底; 绝缘栅结构，其形成在所述第一主表面区域中; 背面区域半导体层，其形成在所述第二主面区域中，并且具有至多5μm的厚度; 最外面的金属膜; 以及背面电极，其形成在背面区域半导体层和最外层金属膜之间的第二主面区域中，并且由层叠的多个膜构成，并且包括应力松弛膜，从而使芯片的错误判断基于制造期间的漏电流测量的质量特别地降低，特别是当存在灰尘并且由于晶片上的应变和产生的压电效应而偏移泄漏电流测量。

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