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51. 发明授权

US06548317B2 Photoelectric conversion element and method for manufacturing the same 有权
标题翻译：光电转换元件及其制造方法
公开(公告)号：US06548317B2
公开(公告)日：2003-04-15
申请号：US09925574
申请日：2001-08-09
申请人： Takehiro Taniguchi , Hironobu Narui , Noriko Ueno , Nobukata Okano
发明人： Takehiro Taniguchi , Hironobu Narui , Noriko Ueno , Nobukata Okano
IPC分类号： H01L2100
CPC分类号： H01L33/38 , H01L33/62 , H01L2924/0002 , H01S5/0202 , H01S5/02268 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/2205 , H01S5/227 , H01S5/4031 , H01L2924/00
摘要： The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.
摘要翻译：本发明的目的是提供一种能够容易且准确地确保接触电极的连接的光电转换元件。在相同的基板上形成多个半导体层和p侧电极层叠的激光振荡器。通过绝缘层的每个开口形成在基底基板上的每个接触电极与每个p侧电极电连接。并排配置的每个激光振荡器对应的开口以对准方向形成为交错构造。每个接触电极与对应于每个开口的对准方向平行延伸。因此，各开口之间的空间和在对准方向上并排设置的每个接触电极之间的间隔变宽，并且消除了对高精度位置匹配的要求。因此，可以容易且准确地连接各p侧电极和各接触电极。

52. 发明授权

US06444998B1 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06444998B1
公开(公告)日：2002-09-03
申请号：US09515917
申请日：2000-03-01
申请人： Takehiro Taniguchi , Hironobu Narui
发明人： Takehiro Taniguchi , Hironobu Narui
IPC分类号： H01L2906
CPC分类号： H01L33/38 , H01L27/153 , H01S5/02276 , H01S5/026 , H01S5/0425 , H01S5/2231 , H01S5/4031 , H01S5/4087
摘要： In semiconductor light emitting sections capable of effectively improving electric cross-talk and effectively avoiding short-circuit between each of light emitting devices, in which a plurality of semiconductor light emitting sections are formed to a semiconductor substrate, and at least one of electrodes for the semiconductor light emitting sections and bonding pads lead out electrically from the electrodes and connected with external leads are formed on one main surface of a semiconductor substrate, a high resistance isolation region is formed, facing the main surface of the semiconductor substrate, below a portion between adjacent conductor layers for electrical leading from the electrode to the bonding pad.
摘要翻译：在能够有效地提高电串扰的半导体发光部中，能够有效地避免在半导体基板上形成有多个半导体发光部的各发光元件之间的短路，以及至少一个用于在半导体衬底的一个主表面上形成半导体发光部和从电极引出并与外部引线相连的接合焊盘，形成面向半导体衬底的主表面的高电阻隔离区，用于从电极引导到接合焊盘的相邻导体层。

53. 发明授权

US5703863A Optical device which detects reflected light with a push-pull method without dividing the reflected light 失效
标题翻译：利用推挽方式检测反射光而不分光反射光的光学装置
公开(公告)号：US5703863A
公开(公告)日：1997-12-30
申请号：US603872
申请日：1996-02-22
申请人： Masato Doi , Hironobu Narui , Takashi Nakao
发明人： Masato Doi , Hironobu Narui , Takashi Nakao
IPC分类号： G11B11/10 , G11B7/00 , G11B7/004 , G11B7/09 , G11B7/12 , G11B11/105
CPC分类号： G11B7/0901 , G11B7/123
摘要： An optical device comprises a light-emitting portion (4), a converging means (3), and a light-receiving portion (5), wherein light (L.sub.F) emitted from the light-emitting portion (4) is converged and irradiated by the converging means (3) on an irradiated portion (2) and returned light (L.sub.R) reflected from the irradiated portion (2) also is converged by the converging means (3), the light-receiving portion (5) is disposed near a confocal position of returned light (L.sub.R) from the irradiated portion (2) of the converging means (2), light (L.sub.F) emitted from the light-emitting portion (4) is passed through a light path of the same axis and received by the light-receiving portion (5) before and after it is reflected on the irradiated portion (2), and the light-receiving portion (5) detects a signal based on a push-pull method. In the optical device such as an optical pickup, the number of optical components can be reduced, and alignment required to adjust optical components of the optical device for proper interrelationship can be simplified. Thus, the optical device can be simplified and miniaturized. Also, a tracking servo signal can be stably detected by utilizing push-pull method.
摘要翻译：光学装置包括发光部分（4），会聚装置（3）和光接收部分（5），其中从发光部分（4）发射的光（LF）被会聚和照射照射部分（2）上的会聚装置（3）和从照射部分（2）反射的返回光（LR）也被会聚装置（3）会聚，光接收部分（5）靠近一个从会聚装置（2）的照射部分（2）返回的光（LR）的共焦点位置，从发光部分（4）发射的光（LF）通过相同轴线的光路并被光接收部分（5）在其照射部分（2）之前和之后被反射，并且光接收部分（5）基于推挽方法检测信号。在诸如光学拾取器的光学装置中，可以减少光学部件的数量，并且可以简化为了适当的相互关系而调整光学装置的光学部件所需的对准。因此，光学装置可以被简化和小型化。此外，通过利用推挽方法可以稳定地检测跟踪伺服信号。

54. 发明授权

US5608233A Optical device for magneto-optical disc system 失效
标题翻译：用于磁光盘系统的光学装置
公开(公告)号：US5608233A
公开(公告)日：1997-03-04
申请号：US429828
申请日：1995-04-27
申请人： Kenji Sahara , Hironobu Narui , Masato Doi , Osamu Matsuda
发明人： Kenji Sahara , Hironobu Narui , Masato Doi , Osamu Matsuda
IPC分类号： G11B11/10 , G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B11/105 , H01L31/0232 , H01L31/153 , H01S5/026 , H01S5/18 , H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： G11B7/1365 , G11B11/10543 , G11B7/123 , G11B7/127 , G11B7/13 , G11B7/1353 , H01L31/0232 , H01L31/153 , H01S5/18 , H01S5/0071 , H01S5/0262 , H01S5/0264
摘要： An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element (101) in which a light-emitting portion (4) and a light-receiving portion (5) are closely disposed on a common substrate and in which reflected-back light obtained from a magneto-optical medium (34) after light emitted from the light-emitting portion (4) was reflected on the magneto-optical medium (34) is detected at a position near confocal position by the light-receiving portion (5). The light-receiving portion (5) on the optical element (1) has a light-receiving surface inclined relative to the optical axis of the reflected-back light formed thereon so that the light-receiving portion has a polarization selective transmittance function on its surface. Thus, the reflected-back light from the magneto-optical medium (34) can be received and detected by the light-receiving portion (5) on the optical element (101).
摘要翻译：用于检测磁光信号的光学装置可以被简化并且在布置中小型化。用于检测磁光信号的光学装置包括光学元件（101），其中发光部分（4）和光接收部分（5）紧密地布置在公共基底上，并且其中反射光在由光接收部分（5）接近共焦点的位置处检测在从光发射部分（4）发射的光在磁光介质（34）上被反射之后从磁光介质（34）。光学元件（1）上的光接收部分（5）具有相对于形成在其上的反射光的光轴倾斜的受光面，使得光接收部分在其上具有偏振选择透射函数表面。因此，来自磁光介质（34）的反射光可以被光学元件（101）上的光接收部分（5）接收和检测。

55. 发明授权

US5568463A Semiconductor laser device to detect a divided reflected light beam 失效
标题翻译：半导体激光装置检测分光反射光束
公开(公告)号：US5568463A
公开(公告)日：1996-10-22
申请号：US399642
申请日：1995-03-07
申请人： Kenji Sahara , Hironobu Narui , Masato Doi , Osamu Matsuda
发明人： Kenji Sahara , Hironobu Narui , Masato Doi , Osamu Matsuda
IPC分类号： G11B11/10 , G11B7/12 , G11B11/105 , H01L31/10 , H01S5/00 , H01S5/026 , G11B7/13
CPC分类号： G11B7/1365 , G11B11/10543 , G11B7/123
摘要： An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element in which a light-emitting portion and a light receiving portion are closely disposed on a common substrate and in which reflected-back light obtained from a magneto-optical medium after light from the light-emitting portion was reflected on the magneto-optical medium is detected at a position near confocal position by the light receiving portion and another light receiving element. The reflected-back light from the magneto-optical medium is divided. One reflected-back light is detected by the light receiving portion of the optical element 1 and the other reflected-back light is detected by another light receiving element.
摘要翻译：用于检测磁光信号的光学装置可以被简化并且在布置中小型化。用于检测磁光信号的光学装置包括光学元件，其中发光部分和光接收部分紧密地布置在公共基板上，并且其中从光电介质获得的反射光在来自在由光接收部和另一光接收元件接近共焦位置的位置处检测出在光磁介质上反射的发光部。来自磁光介质的反射光被分开。一个反射光由光学元件1的光接收部分检测，另一个反射光被另一个光接收元件检测。

56. 发明授权

US5383215A Semiconductor laser which has a (100) top surface and a stripe ridge which extends in the horizontal <01-1> axis direction and has side wall surfaces (110) and a triangular region between (111) faces 失效
标题翻译：具有（100）顶表面和条脊的半导体激光器，其沿水平方向（01-1）轴向延伸并且具有侧壁表面（110）和在（111）面之间的三角形区域
公开(公告)号：US5383215A
公开(公告)日：1995-01-17
申请号：US103799
申请日：1993-08-10
申请人： Hironobu Narui , Daisuke Imanishi
发明人： Hironobu Narui , Daisuke Imanishi
IPC分类号： H01S5/00 , H01S5/22 , H01S5/227 , H01S5/323 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/32316
摘要： An SDH semiconductor laser has a semiconductor substrate which is (100) oriented and has a stripe ridge thereon, first and second cladding layers disposed on stripe ridge, an active layer sandwiched between the first and second cladding layers, and an electrode held in electric contact with the first and second cladding layers and the active layer. The stripe ridge extends in a axis direction, and the first and second cladding layers and the active layer jointly provide a semiconductor stripe region of triangular cross section sandwiched between (111) A faces. A method of manufacturing the SDH semiconductor laser is also disclosed.
摘要翻译： SDH半导体激光器具有（100）取向并具有条纹脊的半导体基板，设置在条纹脊上的第一和第二包层，夹在第一和第二包层之间的有源层和保持电接触的电极与第一和第二包层和有源层。条纹脊沿<01-1>轴方向延伸，并且第一和第二包层和有源层共同提供夹在（111）A面之间的三角形横截面的半导体条纹区域。还公开了一种制造SDH半导体激光器的方法。

57. 发明授权

US08680540B2 Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber 有权
标题翻译：具有采用单芯光纤的双向通信系统的光半导体装置
公开(公告)号：US08680540B2
公开(公告)日：2014-03-25
申请号：US11619352
申请日：2007-01-03
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

58. 发明申请

US20110212559A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20110212559A1
公开(公告)日：2011-09-01
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/32
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

59. 发明授权

US07915625B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07915625B2
公开(公告)日：2011-03-29
申请号：US12208855
申请日：2008-09-11
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/16 , H01S5/1064 , H01S5/2201 , H01S5/221 , H01S5/2222 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/305 , H01S5/3054 , H01S5/3432
摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.
摘要翻译：本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成，掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与第三化合物半导体层中的杂质的取代位置。

60. 发明授权

US07858410B2 Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device 失效
标题翻译：表面发射半导体激光器，其制造方法和电子器件的制造方法
公开(公告)号：US07858410B2
公开(公告)日：2010-12-28
申请号：US12263612
申请日：2008-11-03
申请人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yuichi Kuromizu , Yoshinori Yamauchi , Yoshiyuki Tanaka
IPC分类号： H01L21/00
CPC分类号： H01S5/18388 , H01S5/0421 , H01S5/18311 , H01S5/18394 , H01S2301/166
摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
摘要翻译：提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。

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