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51. 发明公开

EP2315248A1 Method of manufacturing a semiconductor sensor and sensor obtained 审中-公开
标题翻译： Verfahren zur Herstellung eines Halbleitensors und erhaltener Sensor
公开(公告)号：EP2315248A1
公开(公告)日：2011-04-27
申请号：EP09425428.1
申请日：2009-10-26
申请人： Fondazione Bruno Kessler
发明人： Piemonte, Claudio
IPC分类号： H01L27/146
CPC分类号： H01L27/14618 , H01L24/48 , H01L27/14683 , H01L2224/4824 , H01L2224/48465 , H01L2924/00014 , H01L2924/01014 , H01L2924/10253 , H01L2924/12042 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要： A method of manufacturing a semiconductor sensor consisting of a silicon slice comprising an inactive layer (7), a first face (71) thereof having a sensitive layer (6) attached/formed thereon. The method includes a pre-cutting step on at least one face of the sensor, and a following step of completely cutting in the previously tapered zones. Thereby, the damage zone upon the complete cut of the sensor edge, develops underneath the sensitive layer (6) without degrading the operation thereof. Further manipulations and machining operations on the silicon slice as a whole may be operated between the pre-cutting step and the completely cutting step. At their end, the various sensors are definitively separated by completely cutting the silicon slice.
摘要翻译：一种制造半导体传感器的方法，该半导体传感器由包括非活性层（7）的硅片组成，其上附着/形成有敏感层（6）的第一面（71）。该方法包括在传感器的至少一个面上的预切割步骤，以及在之前的锥形区域中完全切割的后续步骤。因此，传感器边缘完全切割时的损伤区域在敏感层（6）的下方形成，而不会降低其操作。在整个切割步骤和完全切割步骤之间可以在硅切片上进一步操作和加工操作。最后，通过完全切割硅片确定地分离各种传感器。

52. 发明公开

EP2256810A1 Method for the production of a 3D solid-state radiation detector 审中-公开
标题翻译： Verfahren zur Herstellung eine 3D-Feststoffstrahlungsdetektors
公开(公告)号：EP2256810A1
公开(公告)日：2010-12-01
申请号：EP09425213.7
申请日：2009-05-29
申请人： Fondazione Bruno Kessler
发明人： Boscardin, Maurizio
IPC分类号： H01L27/146
CPC分类号： H01L27/1446 , H01L31/03529 , Y02E10/50
摘要： Method for the production of a 3D detector comprising a wafer (1) and a plurality of partial incisions (5 and 6) whose perimetral walls are doped alternately and in a different way, being said perimetral walls put into contact by means of metallic contacts (7) on both larger sides (11 and 12) of the wafer (1). Said production method comprises the realization of a first and second oxide layer on both larger sides of the wafer, the insulation of the wafer by means of the doping of the interface surfaces with said oxide layers, the making of conductive areolas near said first oxide layer by means of doping and cross incision with respect to said oxide layers by passing through said second oxide layer up to said first oxide layer, said incisions intercepting said doped areolas, and then the appropriate doping of the perimetral surfaces of said incisions and the making of openings by means of oxide layers for coming into contact with the doped areolas from the outside using metallic material.
摘要翻译：一种用于生产3D检测器的方法，所述3D检测器包括晶圆（1）和多个部分切口（5和6），所述多个部分切口（5和6）的周壁被交替地以不同的方式掺杂，所述周边壁通过金属触点 7）在晶片（1）的两个较大侧面（11和12）上。所述制造方法包括在晶片的两个较大侧面上实现第一和第二氧化物层，通过与所述氧化物层掺杂界面的方式对晶片进行绝缘，在所述第一氧化物层附近制造导电分布通过穿过所述第二氧化物层通过穿过所述第二氧化物层的所述氧化物层的掺杂和交叉切口，所述切口截取所述掺杂的混合物，然后适当掺杂所述切口的周边表面，并制备通过氧化物层与外部使用金属材料与掺杂的混合物接触的开口。

53. 发明公开

EP2154516A1 Method and apparatus for analysing an object 有权
标题翻译： Verfahren und Vorrichtung zur Analyze eines Objekts
公开(公告)号：EP2154516A1
公开(公告)日：2010-02-17
申请号：EP09166941.6
申请日：2009-07-31
申请人： Fondazione Bruno Kessler , Art-test Di Luciano Marras E Anna Pelagotti S.N.C.
发明人： The designation of the inventor has not yet been filed
IPC分类号： G01N23/08 , G01N21/88 , G01V5/00
CPC分类号： G01N23/083 , G01N21/33 , G01N21/35 , G01N21/3563 , G01N21/55 , G01N2021/3155 , G01N2201/10 , G01N2201/103
摘要： A method and apparatus of analyzing a body, wherein a first radiation (X rays) transmitted through the body and a second radiation (visible, IR and/or ultraviolet radiation) reflected by the body surface are detected at each point of a series of investigated points. The data collected for each scanning point are processed so as to maintain the correspondence between the images obtained using the different techniques.
摘要翻译：一种分析身体的方法和装置，其中通过身体透射的第一辐射（X射线）和由身体表面反射的第二辐射（可见的，IR和/或紫外辐射）在一系列被研究的每个点处被检测点。对每个扫描点收集的数据进行处理，以保持使用不同技术获得的图像之间的对应关系。

54. 发明申请

WO2021053574A1 ADHESIVE LABEL 审中-公开
公开(公告)号：WO2021053574A1
公开(公告)日：2021-03-25
申请号：PCT/IB2020/058669
申请日：2020-09-17
申请人： ISTITUTO POLIGRAFICO E ZECCA DELLO STATO S.P.A. , FONDAZIONE BRUNO KESSLER
发明人： GHISA, Giuseppe , INFORTUNA, Francesco Antonio , GUMIERO, Andrea , CASSE, Gianluigi , PUCKER, Georg , LIU, Wei
IPC分类号： G06K19/06 , B42D25/36 , G06K19/08 , G09F3/03 , B42D25/47
摘要： A label (100) suitable for certifying the authenticity of an article, which label (100) comprises: - a support (S) intended to be applied to the article to be certified, - a substrate (L) configured to adhere reversibly to said support (S), - an adhesive layer (2), interposed between said support (S) and said substrate (L), configured to realize a detachment irreversible of said support (S) from the article after the application, wherein said support (S) bears an authentication code (20) identifying the article and said adhesive layer (2) comprises a security element (10), the authentication code (20) and the security element (10) being reciprocally positioned so as to define an overlapping region (15), wherein said security element (10) comprises a reactive optical component (10') detectable at an inspection area () of said overlapping region (15) and wherein said adhesive layer (2) is configured so that said support (S), when detaching from the article, is lack of said reactive optical component (10').

56. 发明公开

EP3925016A1 SENSOR MATRIX AND METHOD FOR ITS MANUFACTURING 审中-公开
公开(公告)号：EP3925016A1
公开(公告)日：2021-12-22
申请号：EP20707521.9
申请日：2020-02-10
申请人： Istituto Poligrafico e Zecca dello Stato S.p.A. , Fondazione Bruno Kessler
发明人： LUCIANI, Laura , GHITTORELLI, Matteo
IPC分类号： H01L41/113 , H01L41/193 , G01K7/34 , G01L9/00 , G01R27/02 , H01L41/45

57. 发明公开

EP3637248A1 USE OF A SEMICONDUCTOR DEVICE FOR THE GENERATION OF RANDOM NUMBERS 审中-公开
公开(公告)号：EP3637248A1
公开(公告)日：2020-04-15
申请号：EP19202007.1
申请日：2019-10-08
申请人： Fondazione Bruno Kessler
发明人： MASSARI, NICOLA , GASPARINI, LEONARDO , PERENZONI, MATTEO , PANCHERI, LUCIO
IPC分类号： G06F7/58
摘要： A use, for the generation of random numbers, of a semiconductor device which comprises, monolithically integrated, an avalanche diode and injector means for carriers of charges. The injector means are operatively associated with the avalanche diode so that the carriers of charges generated by the injector means trigger the avalanche effect of the avalanche diode.

58. 发明公开

EP3425428A1 RADIATION DETECTION ELEMENT, RADIATION DETECTOR AND RADIATION DETECTION APPARATUS 有权
公开(公告)号：EP3425428A1
公开(公告)日：2019-01-09
申请号：EP18182286.7
申请日：2018-07-06
申请人： Fondazione Bruno Kessler , Horiba, Ltd.
发明人： ZORZI, Nicola , GIACOMINI, Gabriele , BORGHI, Giacomo , PICCIOTTO, Antonino , FICORELLA, Francesco , MATSUNAGA, Daisuke
IPC分类号： G01T1/24
摘要： Provided are a radiation detection element, a radiation detector and a radiation detection apparatus that are able to reduce noise.
A radiation detection element (1) comprises: a semiconductor part (11) generating an electric charge by entrance of radiation; a signal output electrode (14) provided at the semiconductor part (11) and outputting a signal caused by the electric charge; a potential gradient generation electrode (12) provided at the semiconductor part (11), for applying voltage such that a potential gradient in which a potential varies toward the signal output electrode (14) is generated inside the semiconductor part (11); a collection electrode (13) provided at the semiconductor part (11), for collecting electric charges not derived from radiation; an insulating film (15) provided on a side of the semiconductor part (11) where the signal output electrode (14) is located; and a conductive layer (17) provided between the insulating film (15) and a part of the semiconductor part (11), and having electric resistance lower than the electric resistance of the semiconductor part (11) and higher than the electric resistance of the collection electrode (13). The conductive layer (17) is located at a position where a distance from the signal output electrode (14) is equal to or longer than a distance between the collection electrode (13) and the signal output electrode (14).

59. 发明授权

EP3063559B1 SOLID-STATE PHOTOMULTIPLIER DEVICE WITH HIGH SPATIAL RESOLUTION AND CONTROL METHOD FOR SAID PHOTOMULTIPLIER DEVICE. 有权
公开(公告)号：EP3063559B1
公开(公告)日：2018-09-12
申请号：EP14812605.5
申请日：2014-10-29
申请人： Fondazione Bruno Kessler
发明人： PIEMONTE, Claudio , GOLA, Alberto
IPC分类号： G01T1/208 , G01T1/24
CPC分类号： G01T1/248 , G01T1/208
摘要： A solid-state photomultiplier device comprising a surface (2) sensitive to photons (F) provided on a semiconductor substrate (3) and provided with a plurality of light sensitive microcells (4) divided into a plurality of sub-groups arranged one after the other according to a pre-established trajectory. The device comprises a plurality of current dividers (7), each of which is electrically connected to at least one of the sub-groups, and where each of the current dividers (7) comprises a first resistor (71) and a second resistor (72) to implement a current partition of the resistive type. The first resistors (71) and the second resistors (72) respectively have a gradually descending and gradually increasing conductance value in proportion to the position along the pre-established trajectory of the sub-group to which each of the current dividers (7) is electrically connected. The device also comprises a first output channel (10) electrically connected to one end of the first resistors (71) and a second output channel (11) electrically connected to one end of the second resistors (72).

60. 发明授权

EP3061132B1 IMPROVED SOLID-STATE PHOTOMULTIPLIER DEVICE AND METHOD FOR CONTROLLING SAID PHOTOMULTIPLIER DEVICE 有权
标题翻译：改进的固态光电倍增器装置和用于控制所述光电倍增器装置的方法
公开(公告)号：EP3061132B1
公开(公告)日：2017-11-15
申请号：EP14806724.2
申请日：2014-10-23
申请人： Fondazione Bruno Kessler
发明人： PIEMONTE, Claudio , GOLA, Alberto
IPC分类号： H01L27/144 , H01L27/146 , G01T1/24
CPC分类号： H01L27/1446 , G01T1/248 , H01L27/14612 , H01L27/14641 , H01L27/14658

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