会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明公开
    • Method for handling interrupts in a high speed I/O controller
    • 在einer Hochgeschwindigkeits-E / A-Steuervorrichtung的Verfahren zur Unterbrechungsbearbeitung
    • EP0852357A2
    • 1998-07-08
    • EP97309998.9
    • 1997-12-11
    • DIGITAL EQUIPMENT CORPORATION
    • Klein, PhilippePaul, GideonWertheimer, Aviad
    • G06F13/24
    • G06F13/24
    • A method to reduce the rate of interrupts by the central processing unit (CPU) without any loss of interrupts. The method uses two parameters. The first parameter sets the event threshold, which is the maximum value of consecutive events allowed to occur, for example, the maximum number of received data packets before an interrupt is posted (for example, a receive interrupt) to the CPU. The second parameter sets the event time-out time, which is the maximum time an event can be pending before posting an interrupt to the CPU. The second parameter is needed since the flow of events in the system is unpredictable and without the time-out limit, handling of the event can be delayed indefinitely.
    • 一种降低中央处理单元(CPU)中断速率的方法,而不会中断任何中断。 该方法使用两个参数。 第一个参数设置事件阈值,这是允许发生的连续事件的最大值,例如中断向CPU发布之前的接收数据包的最大数量(例如,接收中断)。 第二个参数设置事件超时时间,这是事件在向CPU发布中断之前可以等待的最长时间。 需要第二个参数,因为系统中的事件流是不可预测的,没有超时限制,可以无限期地延迟事件的处理。
    • 57. 发明公开
    • FLUX ENHANCED WRITE TRANSDUCER AND PROCESS FOR PRODUCING THE SAME IN CONJUNCTION WITH SHARED SHIELDS ON MAGNETORESISTIVE READ HEADS
    • 助焊剂增强型书写传感器及其制造方法与磁致磁读写头上的共享屏蔽一起使用
    • EP0835507A1
    • 1998-04-15
    • EP96912951.0
    • 1996-04-19
    • Quantum Peripherals Colorado, Inc.
    • SCHEMMEL, Terence, D.
    • G11B5
    • G11B5/3967G11B5/1272G11B5/1871G11B5/23G11B5/3143G11B5/3153G11B5/3163G11B5/332Y10T428/1186
    • A flux enhanced data transducer (40) and method for producing the same in conjunction with shared shields on MR read heads in which substantially between 500-2500 Å of a relatively higher magnetic moment material (48) is added to the upper surface of the shared shield (42), or bottom write head pole, prior to a magnetic flux containment ion milling operation utilizing the upper pole (44) as a mask. The relatively higher magnetic moment flux enhancement layer may comprise CoNiFe, FeN or similar material which is deposited prior to the formation of the dielectric gap layer (46). The flux enhancement layer may then be selectively removed substantially surrounding the upper pole by means of a relatively brief ion milling process in which only on the order of 1.0 kÅ of the layer need be removed and during which only an insignificant amount of the material removed might be re-deposited on the sides of the upper pole.
    • 一种通量增强型数据传感器(40)及其制造方法与MR读取磁头上的共享屏蔽结合使用,其中基本上500-2500A之间的相对较高的磁矩材料(48)被添加到共享的上表面 在使用上极(44)作为掩模的磁通容纳离子铣削操作之前,使用屏蔽(42)或底写入磁极。 相对较高的磁矩通量增强层可以包括在形成介电间隙层(46)之前沉积的CoNiFe,FeN或类似材料。 通量增强层然后可以通过相对短暂的离子铣削过程基本上围绕上极点被选择性地去除,其中仅需要去除该层的1.0k数量级,并且在该过程中仅去除了不显着量的材料 重新沉积在上杆的侧面。