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    • 51. 发明授权
    • Light-emitting diode structure
    • 发光二极管结构
    • US09117968B2
    • 2015-08-25
    • US13834055
    • 2013-03-15
    • TSMC Solid State Lighting Ltd.
    • Hsing-Kuo HsiaChing-Hua Chiu
    • H01L33/00H01L33/20
    • H01L33/20H01L33/007H01L33/0079
    • A light-emitting diode structure includes an AuSn or AuIn-containing bonding layer over a substrate, a metal layer disposed over the bonding layer, a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer, a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer, a multiple quantum well structure disposed between the n-GaN and p-GaN layers, and a conductive contact disposed on the n-GaN layer. The n-GaN layer includes a rough surface with randomly distributed dips. The nano-sized dips have diameters distributed between about 100 nm and about 600 nm, have a dip density ranging from about 107 grains/cm2 to about 109 grains/cm2, and are spaced from each other with an average spacing S, average diameter D, and a ratio S/D that ranges between about 1.1 and about 1.5. The conductive contact is disposed on some of the nano-sized dips of the rough surface.
    • 发光二极管结构包括在衬底上的AuSn或含AuIn的结合层,设置在所述接合层上的金属层,设置在所述金属层上的p型掺杂的氮化镓(p-GaN)层, 掺杂氮化镓(n-GaN)层近似于p-GaN层,设置在n-GaN和p-GaN层之间的多量子阱结构和设置在n-GaN层上的导电接触。 n-GaN层包括具有随机分布的凹陷的粗糙表面。 纳米尺寸浸渍剂的直径分布在约100nm至约600nm之间,浸渍密度范围为约107粒/ cm 2至约109粒/ cm 2,并且以平均间隔S,平均直径D ,S / D的范围为约1.1至约1.5。 导电触点设置在粗糙表面的一些纳米尺寸的凹部上。
    • 57. 发明授权
    • Thermal protection structure for multi-junction LED module
    • 多结LED模块的热保护结构
    • US08899787B2
    • 2014-12-02
    • US13287171
    • 2011-11-02
    • Wei-Yu Yeh
    • Wei-Yu Yeh
    • F21V27/00H05B33/08
    • H05B33/089H05B33/0851Y02B20/341
    • The present disclosure discloses an apparatus for thermally protecting an LED device. The apparatus includes a substrate. The apparatus includes a plurality of light-emitting devices disposed over the substrate. A selected one of the plurality of light-emitting devices is at least partially surrounded by the rest of the plurality of light-emitting devices. The apparatus includes a feedback mechanism electrically coupled to the selected light-emitting device. The feedback mechanism is operable to detect a change in a temperature of the selected light-emitting device. The feedback mechanism is also operable to adjust an electrical current through at least the selected light-emitting device in response to the detected change in the temperature.
    • 本公开公开了一种用于热保护LED装置的装置。 该装置包括基板。 该装置包括设置在基板上的多个发光装置。 所述多个发光器件中的所选择的一个至少部分地被所述多个发光器件的其余部分包围。 该装置包括电耦合到所选择的发光装置的反馈机构。 反馈机构可操作以检测所选择的发光装置的温度变化。 反馈机构还可操作以响应于检测到的温度变化而调节通过至少所选择的发光器件的电流。
    • 59. 发明授权
    • Method and apparatus for packaging phosphor-coated LEDs
    • 用于包装磷光体涂覆的LED的方法和装置
    • US08889439B2
    • 2014-11-18
    • US13788536
    • 2013-03-07
    • TSMC Solid State Lighting Ltd.
    • Chi-Xiang TsengHsiao-Wen LeeMin-Sheng WuTien-Min Lin
    • H01L33/50H01L33/46
    • H01L33/504H01L33/46H01L33/505H01L2933/0041
    • The present disclosure involves a method of packaging light-emitting diodes (LEDs). According to the method, a plurality of LEDs is provided over an adhesive tape. The adhesive tape is disposed on a substrate. In some embodiments, the substrate may be a glass substrate, a silicon substrate, a ceramic substrate, and a gallium nitride substrate. A phosphor layer is coated over the plurality of LEDs. The phosphor layer is then cured. The tape and the substrate are removed after the curing of the phosphor layer. A replacement tape is then attached to the plurality of LEDs. A dicing process is then performed to the plurality of LEDs after the substrate has been removed. The removed substrate may then be reused for a future LED packaging process.
    • 本公开涉及封装发光二极管(LED)的方法。 根据该方法,在胶带上设置多个LED。 粘合带设置在基板上。 在一些实施例中,衬底可以是玻璃衬底,硅衬底,陶瓷衬底和氮化镓衬底。 磷光体层被涂覆在多个LED上。 然后将磷光体层固化。 在荧光体层固化之后去除胶带和基材。 然后将替代胶带附接到多个LED。 然后在去除衬底之后,对多个LED进行切割处理。 然后可以将去除的衬底重新用于将来的LED封装工艺。