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41. 发明授权

EP3778570B1 STRONGLY-POLARIZED MOLECULE, AND SINGLE MOLECULE FIELD EFFECT TRANSISTOR PREPARED THEREFROM 有权
公开(公告)号：EP3778570B1
公开(公告)日：2023-10-04
申请号：EP19780897.5
申请日：2019-03-29
发明人： GUO, Xuefeng , XIN, Na , ZHANG, Weining , MENG, Linan
IPC分类号： C07D209/52 , C07C5/00 , C07F15/00 , C07C211/31 , C07D487/04 , C07F15/06 , C07F3/06 , H10K10/00 , H10K10/46 , C07F15/03 , C07C209/52 , C07D333/78 , C07C15/20 , C07C211/30

42. 发明授权

EP3577702B1 METHOD FOR MATERIAL PACKAGING AND DEVELOPING ROTATIONALLY ANISOTROPIC MATERIALS 有权
公开(公告)号：EP3577702B1
公开(公告)日：2024-03-27
申请号：EP18709440.4
申请日：2018-02-02
发明人： PITMAN, Michael , CLEMENT, Teresa J. , STRATIS, Glafkos K. , SAMUEL, Alphonso A. , DELY, Alex , SUNNE, Wayne L.
IPC分类号： H10K10/00 , H10K30/00 , H10K85/60 , H01G9/20

43. 发明授权

EP3577701B1 SOLID STATE MATERIALS WITH TUNABLE DIELECTRIC RESPONSE AND ROTATIONAL ANISOTROPY 有权转让
公开(公告)号：EP3577701B1
公开(公告)日：2024-03-27
申请号：EP18707785.4
申请日：2018-02-02
发明人： PITMAN, Michael , CLEMENT, Teresa J. , STRATIS, Glafkos K. , SAMUEL, Alphonso A. , DELY, Alex , SUNNE, Wayne L.
IPC分类号： H10K10/00 , H10K85/60 , G02F1/00

44. 发明公开

EP4236651A1 A/M/X CRYSTALLINE MATERIAL, PHOTOVOLTAIC DEVICE, AND PREPARATION METHOD THEREFOR 审中-实审
公开(公告)号：EP4236651A1
公开(公告)日：2023-08-30
申请号：EP21963474.8
申请日：2021-12-23
申请人： Contemporary Amperex Technology Co., Limited
发明人： SU, Shuojian , LIU, Zhaohui , WANG, Yandong , WANG, Yanfen , GUO, Yongsheng , CHEN, Guodong , OUYANG, Chuying
IPC分类号： H10K10/00
摘要： This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer. The photoactive crystalline material layer includes a penetrating crystal, where the penetrating crystal is a crystal penetrating through the photoactive crystalline material layer, and a percentage p of a quantity of penetrating crystals in a total quantity of crystals of the photoactive crystalline material layer is ≥80%. The photoactive crystalline material layer includes a backlight side and a backlight crystal, where the backlight crystal is a crystal exposed to the backlight side and has a backlight crystal face exposed to the backlight side. At least one region of the backlight side has an average flatness index R avg being ≤75.

45. 发明公开

EP4403548A1 NOVEL COMPOUND FOR CAPPING LAYER, AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING SAME 审中-公开
公开(公告)号：EP4403548A1
公开(公告)日：2024-07-24
申请号：EP22870125.6
申请日：2022-07-22
申请人： Samsung Display Co., Ltd. , Dongjin Semichem Co., Ltd.
发明人： HAM, Ho Wan , AN, Hyun Cheol , KIM, Dong Jun , LEE, Dong Hyun , ANN, Ja Eun , KWON, Dong Yuel , LEE, Sung Kyu , LEE, Tae Jin , PARK, Yeong Rong , LEE, Dae Woong , OH, Il Soo , LEE, Bo Ra , IM, Hyeon Jeong , CHO, Ill Hun
IPC分类号： C07C233/62 , C07C235/40 , C07C323/30 , C07C219/24 , C07D211/62 , C07D401/12 , C07D309/08 , H10K10/00 , H10K77/00
CPC分类号： C07D309/08 , C07C233/62 , C07D401/12 , C07C323/30 , C07C219/24 , C07D211/62 , C07C235/40
摘要： A novel compound for a capping layer, and an organic light emitting device containing the same are disclosed.

46. 发明公开

EP4397154A1 NON-VOLATILE RESISTIVE RANDOM-ACCESS MEMORY AND A MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：EP4397154A1
公开(公告)日：2024-07-10
申请号：EP22863738.5
申请日：2022-08-29
申请人： University of South Africa
发明人： VALLABHAPURAPU, Sreedevi , VALLABHAPURAPU, Vijaya Srinivasu , DLAMINI, Zolile Wiseman
IPC分类号： H10K10/00 , H10K85/00 , H01L27/00 , H10K19/00 , H10N70/00 , H10K99/00 , H10K10/80
CPC分类号： G11C13/0014 , H10B63/30 , G11C2213/1520130101

47. 发明公开

EP4369885A1 PEROVSKITE CELL AND PHOTOVOLTAIC MODULE 审中-实审
公开(公告)号：EP4369885A1
公开(公告)日：2024-05-15
申请号：EP22851652.2
申请日：2022-05-10
申请人： Longi Green Energy Technology Co., Ltd.
发明人： XIE, Junjie , WU, Zhao , XU, Chen , LI, Zifeng , LIU, Tong , SUN, Zhuxing
IPC分类号： H10K10/00
CPC分类号： Y02E10/549 , H10K30/80 , H10K30/50 , H10K30/82
摘要： The present application relates to the technical field of solar photovoltaics. Provided are a perovskite cell and a photovoltaic module. The perovskite cell comprises a perovskite light absorption layer, a first carrier transport layer, a second carrier transport layer, a first transparent electrode layer, a second transparent electrode layer, and an optical adjustment layer, wherein the optical adjustment layer is arranged between the second carrier transport layer and the second transparent electrode layer; and the transmittance of the optical adjustment layer for visible light is greater than or equal to a preset transmittance, and the reflectivity of the optical adjustment layer for infrared light is greater than or equal to a preset reflectivity. In the present application, the transmittance of an optical adjustment layer for visible light is greater than or equal to a preset transmittance, such that the efficiency of the perovskite cell and the lighting requirement of a building can be ensured; in addition, when the reflectivity of the optical adjustment layer for infrared light is greater than or equal to a preset reflectivity, the requirements of the building for heat preservation, refrigeration, etc., can be ensured, thereby reducing the energy loss caused by the requirements of the building for heat preservation and refrigeration.

49. 发明授权

KR102476916B1 가교결합된 유기 전자 기능층을 갖는 유기 전자 부품 및 상기 부품의 제조에 사용할 수 있는 알키닐 에테르 有权
公开(公告)号：KR102476916B1
公开(公告)日：2022-12-12
申请号：KR1020177007797
申请日：2015-08-17
IPC分类号： H10K99/00 , H10K50/00 , H10K30/00 , H10K10/00
摘要： 본발명은, 하나이상의제1 전극층및 제2 전극층, 및제1 및제2 전극층사이에배치되는유기전자기능층을갖는유기전자부품에관한것이다. 상기기능층은가교결합된중합체를포함하며, A) 가교결합시킬중합체및/또는단량체, 및가교결합성분을제공하는단계, B) 100℃이상의온도에서중합체및/또는단량체를가교결합시키는단계에의해얻을수 있다. 가교결합성분은이하의반응(1)에따라케텐단위가열적으로생성될수 있는전구체단위, 특히알키닐에테르를함유한다. 본발명은또한이에사용할수 있는알키닐에테르및 이로부터얻을수 있는가교결합된중합체에관한것이다. TIFF112017028063416-pct00033.tif19139 (I)

50. 发明授权

KR102480656B1 듀얼 게이트 구조로 이루어진 유기 전계효과 트랜지스터 타입의 복합센서장치 및 그 제조방법 有权
公开(公告)号：KR102480656B1
公开(公告)日：2022-12-23
申请号：KR1020150184905
申请日：2015-12-23
IPC分类号： G01D21/02 , G01N27/414 , H10K10/00 , H01L51/00 , H10K99/00
摘要： 본발명은듀얼게이트(Dual-Gate) 구조로이루어진유기전계효과트랜지스터(OFET) 타입의복합센서장치및 그제조방법에관한것이다. 보다구체적으로본 발명의일실시예에따르면, 듀얼게이트구조로이루어진유기전계효과트랜지스터타입의복합센서장치는, 서로이격하여평형하게배치된소스전극및 드레인전극을포함하여이루어지는소스드레인전극층, 상기소스드레인전극층상단에배치된제 1 게이트전극층, 상기소스드레인전극층하단에배치된제 2 게이트전극층, 상기소스드레인전극층과상기제 1 게이트전극층사이에위치하되자외선감지를수행하는제 1 유전층, 상기소스드레인전극층과상기제 2 게이트전극층사이에위치하되가스감지를수행하는채널층을포함하여이루어질수 있다.

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