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    • 41. 发明公开
    • LITHOGRAPHIC STRUCTURE AND METHOD FOR MAKING FIELD EMITTERS
    • 光刻结构及其制造方法场致发射装置
    • EP1002328A1
    • 2000-05-24
    • EP98938275.9
    • 1998-08-04
    • FED CORPORATION
    • JONES, Gary, W.JONES, Susan, K.GHOSH, Almalkumar, P.
    • H01J9/02
    • H01J9/025
    • A mask structure (220) may be formed on a field emitter substrate(100) for use in forming emitter wells (110) on and in the substrate. The mask structure (220) may be formed from a multilayered structure on the surface of the substrate (100) using a laser lithography process. From the substrate up, the multilayered structure may include an antireflective coating (200), a photoresistive layer (300), an optional etch resistant layer (600) between the antireflective coating and the photoresistive layer, and an optional second antireflective coating (700) between the optional etch resistant layer and the photoresistive layer. The pattern of the mask structure (220) may be transferred to the multilayer structure by exposing the photoresistive layer (300) to laser light. The antireflective coatings (200, 700) may reduce the amount of stray laser light that reflects off the substrate (100) and onto the back of the photoresistive layer (300). Development of the photoresistive layer (300) follwing exposure to laser light may be monitored and selectively arrested to form a mask structure (220) with a selective pitch. The antireflective coating (200) may be etched optionally so that it is undercut beneath the overlying etch resistant layer (600) or photoresistive layer (300) to aid in the formation of emitters (500) using a veil field emitter process or an etched gate process.
    • 45. 发明公开
    • METHOD AND APPARATUS FOR SEQUENTIAL MEMORY ADDRESSING
    • 对于顺序存储器寻址方法及装置
    • EP1084496A1
    • 2001-03-21
    • EP99921693.0
    • 1999-05-06
    • FED CORPORATION
    • MALAVIYA, Shashi, D.PRACHE, Olivier, F.
    • G11C19/18G11C19/28
    • G11C8/04G11C19/184G11C19/28
    • Circuits for sequentially addressing memory locations in time with pulses received from a clock are disclosed. The circuits may provide a positive voltage output signal at successive output nodes (A, B, C, D, E) associated with corresponding stages in the circuit responsive to the application of a clock signal (CLOCK, -CLOCK) to the circuit stages. The circuit may comprise at least first and second stages wherein said first stage (100) comprises means Q1, QA, C1) for providing a positive voltage signal at a first output node (A) in the first stage in response to application of a first positive clock pulse (CLOCK) to the first stage, and wherein said second stage comprises means for providing a positive voltage signal at a second output node (B) in the second stage in response to application of a second posivitive clock pulse (-CLOCK) to the second stage. Addressing of memory locations that contain pixel information for a video display is one particular application in which sequential addressing may be required. Sequential addressing is useful in video applications because it permits sequential selection of the pixel rows and columns that make up the display screen. Sequential scanning of the memory locations for screen information can be carried out in conjunction with the scanning of an electron source across the screen of the display.
    • 49. 发明授权
    • Organic light emitting device structure and process
    • 有机发光器件结构及工艺
    • US6060728A
    • 2000-05-09
    • US94731
    • 1998-06-15
    • Amalkumar P. GhoshGary W. Jones
    • Amalkumar P. GhoshGary W. Jones
    • H01L27/32H01L33/00
    • H01L27/3283
    • Isolation structures and means for isolating the electron injectors in an organic light emitting device are disclosed. The isolation structures may reduce the likelihood of electrical shorts or cross-talks between adjacent columns of electron injector material. The isolation structures may comprise multiple layers of distinct material, including a layer of organic insulation material, such as photoresist or other hydrophobic organic material. The insulation material may be spin or extrusion coated onto the device. The insulation material may be sandwiched between inorganic oxide layers. The insulation material may be selected such that it is capable of being preferentially etched relative to the oxide layers by dry etching methods such as oxygen plasma. Alternatively, the insulation material may be made of material that does not have a very strong adhesion to an underlying oxide layer, so that the insulation material and any conductive material formed on top of it may be removed using a tape lift-off process. Methods for making the aforementioned isolation structures are also disclosed.
    • 公开了用于隔离有机发光器件中的电子注入器的隔离结构和装置。 隔离结构可以减少电子注射器材料的相邻列之间的电短路或交叉谈话的可能性。 隔离结构可以包括多层不同的材料,包括一层有机绝缘材料,例如光致抗蚀剂或其它疏水性有机材料。 绝缘材料可以旋转或挤压涂覆在设备上。 绝缘材料可以夹在无机氧化物层之间。 可以选择绝缘材料,使得其能够通过诸如氧等离子体之类的干蚀刻方法相对于氧化物层优先蚀刻。 或者,绝缘材料可以由对下面的氧化物层不具有非常强的粘附性的材料制成,从而可以使用带剥离工艺去除绝缘材料和形成在其顶部的任何导电材料。 还公开了制备上述隔离结构的方法。
    • 50. 发明授权
    • Lithographic structure and method for making field emitters
    • 制作场致发射体的平版印刷结构和方法
    • US6027388A
    • 2000-02-22
    • US906311
    • 1997-08-05
    • Gary W. JonesSusan K. JonesAmalkumar P. Ghosh
    • Gary W. JonesSusan K. JonesAmalkumar P. Ghosh
    • H01J9/02
    • H01J9/025
    • A mask structure may be formed on a field emitter substrate for use in forming emitter wells on and in the substrate. The mask structure may be formed from a multilayered structure on the surface of the substrate using a laser lithography process. From the substrate up, the multilayered structure may include an antireflective coating, a photoresistive layer, an optional etch resistant layer between the antireflective coating and the photoresistive layer, and an optional second antireflective coating between the optional etch resistant layer and the photoresistive layer. The pattern of the mask structure may be transferred to the multilayer structure by exposing the photoresistive layer to laser light. The antireflective coatings may reduce the amount of stray laser light that reflects off the substrate and onto the back of the photoresistive layer. Development of the photoresistive layer following exposure to laser light may be monitored and selectively arrested to form a mask structure with a selective pitch. The antireflective coating may be etched optionally so that it is undercut beneath the overlying etch resistant layer or photoresistive layer to aid in the formation of emitters using a veil field emitter process or an etched gate process.
    • 掩模结构可以形成在场发射器衬底上,用于在衬底上和衬底中形成发射极阱。 掩模结构可以使用激光光刻工艺在衬底的表面上由多层结构形成。 从衬底向上,多层结构可以包括抗反射涂层,光致抗蚀剂层,抗反射涂层和光致抗蚀剂层之间的任选的耐蚀刻层,以及可选的耐蚀刻层和光刻胶层之间的可选的第二抗反射涂层。 掩模结构的图案可以通过将光致抗蚀剂层暴露于激光来转移到多层结构。 抗反射涂层可以减少从衬底反射到光致抗蚀剂层背面的杂散激光的量。 暴露于激光后的光致抗蚀剂层的显影可以被监测并选择性地阻止以形成具有选择性间距的掩模结构。 可以任选地对抗反射涂层进行蚀刻,使其在覆盖的抗蚀刻层或光致抗蚀剂层下方被切下,以帮助使用面膜场发射器工艺或蚀刻浇口工艺形成发射器。