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    • 45. 发明专利
    • REPAIR SUPPORT APPARATUS FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD THEREFOR
    • JP2000206480A
    • 2000-07-28
    • JP845499
    • 1999-01-14
    • ADVANCED DISPLAY KK
    • SUGIMOTO HIROSHI
    • G02F1/136G02F1/13G02F1/1365G02F1/1368G06F17/30
    • PROBLEM TO BE SOLVED: To provide a defective point repair support apparatus of a liquid crystal display device which preserves not only the characters of the record of the repair of the liquid crystal display device but the images before and after the repair as well, and presents the past repair examples and the repair methods by the same and a method therefor. SOLUTION: This repair support apparatus of the liquid crystal display device has a stage which is loaded with a TFT array substrate and moves the same, a movement instruction means which gives instructions so as to cause the stage to move to a desired direction and desired position, a stage moving means which moves the stage to the desired direction and desired position instructed by the movement instruction means, a display means which projects the work macro-photographed by a camera, a defect information preserving means which stores the contents of the defect discovered in an inspection stage and the place thereof, a laser irradiation instructing means which instructs laser irradiation for the purpose of the defect repair and a defect repair history preserving means which preserves the repair method used at the time of the defect repair, the repair point and the images before and after the repair displayed on the display means.
    • 49. 发明专利
    • ELECTROOPTIC ELEMENT AND ITS PRODUCTION
    • JP2000111937A
    • 2000-04-21
    • JP28520698
    • 1998-10-07
    • ADVANCED DISPLAY KK
    • NAKAMURA NOBUHIROYABUSHITA KOJIITO OSAMU
    • G02F1/1343G02F1/136G02F1/1362G02F1/1368
    • PROBLEM TO BE SOLVED: To prevent corrosion and disconnection of auxiliary capacity wiring in the succeeding pixel etching process, in the production method of the electrooptic element using corrosive metal such as Al or Al-alloy as the auxiliary capacity wiring. SOLUTION: When gate wirings 1, auxiliary capacity electrodes 2 and an auxiliary capacity wiring group 3 are formed on an insulating substrate using a first metal, each auxiliary capacity wiring is formed in the separated state each other. Then, first insulating films, semiconductor active films and ohmic films are formed, and the semiconductor active films and ohmic films are subjected to patterning and, further, electroconductive films are formed and subjected to patterning to form pixel electrodes. As the auxiliary capacity wirings are formed in the separated state, corrosion and disconnection of the auxiliary capacity wirings are prevented even when a film defect in the insulating films mentioned above occurs. Thereafter, contact holes 7a, 7b are formed at both ends of the auxiliary capacity wirings and then, source wirings, drain electrodes and assembled leader wirings 10a and 10b are formed using a second metal. Thereafter, the ohmic films of TFT(thin film transistor) channeling parts are removed and, after forming second insulating films, the insulating films of gate terminals and source terminal IC connecting parts are removed.