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    • 41. 发明授权
    • Microwave harmonic processing circuit
    • 微波谐波处理电路
    • US08680941B2
    • 2014-03-25
    • US13496259
    • 2010-09-07
    • Kenta KurodaKazuhiko Honjo
    • Kenta KurodaKazuhiko Honjo
    • H03H7/38
    • H01P1/2039H01P1/268H03F1/0205H03F1/56H03F3/601H03F2200/387H03F2200/423
    • A microwave harmonic processing circuit includes (n−1) parallel open ended stubs differing in length, connected in parallel to an output terminal of a serial transmission line at a single point, and having predetermined electrical lengths corresponding to second to higher n-th (n is any integer) harmonics, respectively, the serial transmission line having an input terminal connected to an output terminal of a transistor and having a predetermined electrical length; a first strip conductor connecting the serial transmission line to two parallel open ended stubs of the (n−1) parallel open ended stubs at a single connecting point; a second strip conductor connecting the (n−3) parallel open ended stubs to each other at a single connecting point; a ground layer disposed between first strip conductor and second strip conductor; and a via electrically connecting a connecting portion of first strip conductor and a connecting portion of second strip conductor.
    • 微波谐波处理电路包括长度不同的(n-1)个并行开放短截线,并联连接到串行传输线的单个输出端的输出端,并且具有对应于第二至第n( n是任何整数)谐波,串联传输线具有连接到晶体管的输出端并具有预定电长度的输入端; 将串联传输线连接到(n-1)个并联开放端短截线的两个平行的开端短管的第一带状导体,在单个连接点处; 在(n-3)个平行的开放端子的单个连接点处彼此连接的第二带状导体; 设置在第一带状导体和第二带状导体之间的接地层; 以及将第一带状导体的连接部和第二带状导体的连接部电连接的通路。
    • 42. 发明授权
    • Amplifier circuit
    • 放大器电路
    • US08154348B2
    • 2012-04-10
    • US12872589
    • 2010-08-31
    • Kazuhiko HonjoYoichiro TakayamaRyo Ishikawa
    • Kazuhiko HonjoYoichiro TakayamaRyo Ishikawa
    • H03F3/191
    • H03F3/60H03F1/56H03F3/66H03F2200/387H03F2200/391H03F2200/402
    • An amplifier circuit operating at a fundamental angular frequency •0, includes: a transistor which is represented by an equivalent circuit which includes: an equivalent output current source, a drain-source capacitor as a parallel parasitic capacitor to an output node of the equivalent output current source, and a drain inductor as serial parasitic inductor connected between the equivalent output current source and a drain output node; a harmonic frequency processing circuit which includes an input node connected with the drain output node and an output node; a resonant circuit section provided between the output node of the harmonic frequency processing circuit and a ground node and comprising (2n+1) resonators which have resonance frequencies different from each other; and a load resistance provided in a back stage of the harmonic frequency processing circuit. The resonance frequencies of the (2n+1) resonators are coincident with frequencies of (n+1) poles and n zeros formed between the drain output node and the ground node in the transistor when the output node of the harmonic frequency processing circuit is short-circuited to the ground node.
    • 以基角角频率工作的放大器电路,包括:由等效电路表示的晶体管,该等效电路包括:等效输出电流源,作为并联寄生电容器的漏源电容器到等效输出的输出节点 电流源和漏极电感,作为连接在等效输出电流源和漏极输出节点之间的串联寄生电感; 谐波频率处理电路,其包括与所述漏极输出节点连接的输入节点和输出节点; 谐振电路部分,设置在谐波频率处理电路的输出节点和接地节点之间,并且包括具有彼此不同的共振频率的(2n + 1)个谐振器; 以及设置在谐波频率处理电路的后级中的负载电阻。 当谐波频率处理电路的输出节点短路时,(2n + 1)谐振器的谐振频率与晶体管中的漏极输出节点和接地节点之间形成的(n + 1)极和n个零点的频率一致 - 通向地面节点。
    • 43. 发明申请
    • THREE-DIMENSIONAL WIRING BOARD
    • 三维接线板
    • US20100288540A1
    • 2010-11-18
    • US12808107
    • 2009-01-16
    • Kazuhiko HonjoTadashi Nakamura
    • Kazuhiko HonjoTadashi Nakamura
    • H05K1/03
    • H05K3/462H05K1/183H05K3/4069H05K3/4697H05K2201/0133H05K2201/0209H05K2201/09154H05K2201/10378H05K2203/061H05K2203/063H05K2203/068
    • A three-dimensional circuit board includes a lower substrate, a connection layer provided on an upper surface of the lower substrate, and an upper substrate provided on an upper surface of the connection layer. The connection layer exposes a portion of the upper surface of the lower substrate. The connection layer includes an insulating layer having a through-hole, and a via-conductor made of conductive material filling the through-hole. A recess is provided directly above the portion of the upper surface of the lower substrate and is surrounded by a side surface of the upper substrate and a side surface of the connection layer. A portion of the upper surface of the connection layer connected to the side surface of the connection layer inclines in a direction toward the portion of the upper surface of the lower substrate. The portion of the upper surface of the connection layer is provided from the side surface of the connection layer to the via-conductor. A portion of an upper substrate of the upper substrate connected to the side surface of the upper substrate inclines in a direction toward the portion of the upper surface of the lower substrate. The circuit board allows a component to be mounted in the recess efficiently.
    • 三维电路板包括下基板,设置在下基板的上表面上的连接层和设置在连接层的上表面上的上基板。 连接层露出下部基板的上表面的一部分。 连接层包括具有通孔的绝缘层和由填充通孔的导电材料制成的通孔导体。 在下基板的上表面的正上方设置凹部,被上基板的侧面和连接层的侧面包围。 连接到连接层的侧表面的连接层的上表面的一部分在朝向下基板的上表面的部分的方向上倾斜。 连接层的上表面的部分从连接层的侧表面提供到通孔导体。 连接到上基板的侧表面的上基板的上基板的一部分在朝向下基板的上表面的部分的方向上倾斜。 电路板允许组件有效地安装在凹槽中。
    • 48. 发明授权
    • Amplifier circuit having impedance matching circuit
    • 具有阻抗匹配电路的放大器电路
    • US5473281A
    • 1995-12-05
    • US309393
    • 1994-09-20
    • Kazuhiko Honjo
    • Kazuhiko Honjo
    • H03F3/60
    • H03F3/60
    • An amplifier circuit having an impedance matching circuit coupled between a transistor having an element impedance of Z.sub.Tr and a first transmission line having a characteristic impedance of Z.sub.0, the impedance matching circuit including a second transmission line having a characteristic impedance Z.sub.T0 .apprxeq.(Z.sub.Tr .times.Z.sub.0).sup.1/2 and a length of a quarter wavelength, and a high-harmonic processing circuit disposed at the connection of the second transmission line to the first transmission line. The high-harmonic component processing circuit has two parallel stubs each having a certain characteristic impedance and a released tip end, the two parallel stubs having length of one-eighth wavelength and one-twelfth wavelength, respectively.
    • 一种具有耦合在具有ZTr的元件阻抗的晶体管和具有Z0的特性阻抗的第一传输线的阻抗匹配电路的放大器电路,所述阻抗匹配电路包括具有特性阻抗ZT0 APPROX(ZTrxZ0)1 / 2和四分之一波长的长度,以及设置在第二传输线与第一传输线的连接处的高次谐波处理电路。 高次谐波分量处理电路具有分别具有一定特性阻抗的两个并联短截线和释放的尖端,两个平行短截线长度分别为八分之一波长和十二分之一波长。
    • 49. 发明授权
    • Three-dimensional integrated circuit
    • 三维集成电路
    • US4779127A
    • 1988-10-18
    • US882676
    • 1986-07-07
    • Kazuhiko Honjo
    • Kazuhiko Honjo
    • H01L27/095H01L21/338H01L21/8232H01L27/00H01L27/06H01L29/205H01L29/808H01L29/812H01L27/02H01L29/12H01L29/80
    • H01L29/205H01L27/0605H01L29/808
    • In order to minimize the interconnections, there is provided a three-dimensional integrated circuit fabricated on a semi-insulating substrate of compound semiconductor material comprising a first compound semiconductor layer formed on the surface of the semi-insulating substrate and electrically connected to a variable voltage source, a second compound semiconductor layer formed on the surface of the first compound semiconductor layer opposite in conductivity type thereto and providing an electric device together with the first compound semiconductor layer, an undoped compound semiconductor layer epitaxially grown on the surface of the second compound semiconductor layer and formed with a plurality of doped regions for providing interconnections of the three dimensional integrated circuit, one of the interconnections providing an electric connections to the electric device formed with the first and second compound semiconductor layers, a doped compound semiconductor layer formed on the surface of the undoped compound semiconductor layer and capable of providing a current path established therein, and a conductive layer formed on the surface of the doped compound semiconductor layer and providing a gate to control the current path in the doped compound semiconductor layer, the conductive layer and the doped compound semiconductor layer forming parts of a field effect transistor which in turn forms parts of the three-dimensional integrated circuit together with the electric device.
    • 为了最小化互连,提供了一种制造在化合物半导体材料的半绝缘衬底上的三维集成电路,其包括形成在半绝缘衬底的表面上并电连接到可变电压的第一化合物半导体层 源,形成在与导电类型相反的第一化合物半导体层的表面上并与第一化合物半导体层一起提供电子器件的第二化合物半导体层,外延生长在第二化合物半导体的表面上的未掺杂的化合物半导体层 并且形成有多个用于提供三维集成电路的互连的掺杂区域,所述互连中的一个提供与形成有第一和第二化合物半导体层的电子器件的电连接,形成在第一和第二化合物半导体层上的掺杂化合物半导体层 未掺杂的化合物半导体层的表面,并且能够提供其中建立的电流路径,以及形成在掺杂化合物半导体层的表面上并提供栅极以控制掺杂化合物半导体层中的电流路径的导电层,导电层 并且掺杂的化合物半导体层形成场效应晶体管的一部分,该场效应晶体管又与电子器件一起形成三维集成电路的一部分。