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    • 48. 发明授权
    • Quartz glass crucible for pulling up silicon single crystal and method for producing the same
    • 用于提升硅单晶的石英玻璃坩埚及其制造方法
    • US06916370B2
    • 2005-07-12
    • US10345056
    • 2003-01-15
    • Hiroyuki Watanabe
    • Hiroyuki Watanabe
    • C03B20/00C03B19/09C30B15/10C30B29/06C30B13/02
    • C03B19/095C03B2201/03C03B2201/50C30B15/10Y02P40/57Y10S117/90Y10T117/1032Y10T117/1052
    • An object of the invention is to provide a quartz glass crucible for pulling up silicon single crystal and a method for producing the same, suitable for improving the productivity of the crucible and the quality of the silicon single crystal, which, by forming a crystalline layer on the inner surface of the quartz glass crucible during pulling up silicon single crystal, prevents degradation from occurring on the inner surface of the crucible and increases the ratio of single crystal while preventing the dislocation from forming on the single crystals. The objects above have been accomplished by a quartz glass crucible for pulling up silicon single crystal, having a double layered structure comprising a naturally occurring quartz glass outer layer and a synthetic quartz glass inner layer, said synthetic quartz glass inner layer contains at least one type of an alkali metal ion selected from the group consisting of Na ion, K ion, and Li ion, which is diffused or moved from said naturally occurring quartz glass outer layer into said synthetic quartz glass inner layer.
    • 本发明的目的是提供一种用于提升硅单晶的石英玻璃坩埚及其制造方法,其适用于提高坩埚的生产率和硅单晶的质量,通过形成晶体层 在提升硅单晶时在石英玻璃坩埚的内表面上,防止在坩埚的内表面上发生劣化,并增加单晶的比例,同时防止在单晶上形成位错。 上述目的已经通过用于提拉硅单晶的石英玻璃坩埚来实现,其具有包括天然存在的石英玻璃外层和合成石英玻璃内层的双层结构,所述合成石英玻璃内层包含至少一种类型 选自Na离子,K离子和Li离子的碱金属离子,其从所述天然存在的石英玻璃外层扩散或移动到所述合成石英玻璃内层中。