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41. 发明授权

US06830869B2 Pattern forming material and method of pattern formation 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06830869B2
公开(公告)日：2004-12-14
申请号：US10415434
申请日：2003-04-29
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Tsuyohiko Fujigaya
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Tsuyohiko Fujigaya
IPC分类号： G03F7004
CPC分类号： G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2 and, and an acid generator: wherein R1 and R3 are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R2 is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R4 is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0
摘要翻译：本发明的图案形成材料含有包含由化学式1表示的第一单元和由化学式2表示的第二单元的基础聚合物和酸产生剂：其中R1和R3相同或不同，为氢原子氯原子，氟原子，烷基或含有氟原子的烷基; R2是不被酸释放并选自氢原子，烷基，环脂族基，芳基，杂环，酯基和醚基的原子或基团; R4是由酸释放的保护基; m为0〜5的整数。 a和b满足0

42. 发明授权

US06806029B2 Pattern formation material and pattern formation method 失效
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06806029B2
公开(公告)日：2004-10-19
申请号：US10235945
申请日：2002-09-06
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Tsuyohiko Fujigaya
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Tsuyohiko Fujigaya
IPC分类号： G03F7004
CPC分类号： C09D145/00 , C08F8/00 , C08F212/14 , C08F228/02 , C08F232/04 , C08F2800/10 , C08F2800/20 , C08K5/42 , C08L2203/206 , C09D141/00 , G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , C08L41/00
摘要： A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0
摘要翻译：本发明的图案形成材料含有包含由化学式1表示的第一单元和由化学式2表示的第二单元的基础聚合物和酸产生剂：其中R1和R2相同或不同，并且选自氢原子，氯原子，氟原子，烷基和含氟原子的烷基; R3是被酸释放的保护基; m为0〜5的整数， anda和b满足0

43. 发明授权

US06753132B2 Pattern formation material and pattern formation method 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06753132B2
公开(公告)日：2004-06-22
申请号：US10034366
申请日：2002-01-03
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03F700
CPC分类号： G03F7/0392 , G03F7/0046 , Y10S430/108 , Y10S430/168
摘要： A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: Chemical Formula 1: Chemical Formula 2: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译：通过在基板上涂布含有由化学式1表示的第一单元和化学式2表示的第二单元的聚合物的图案形成材料和酸产生剂，形成抗蚀剂膜：化学式1：化学式2 其中R1和R2相同或不同，选自烷基，氯原子和含氟原子的烷基; R3是由酸释放的保护基; m为0〜5的整数。接着，对曝光后的光的波长短于180nm的曝光光照射抗蚀剂膜，通过在图案曝光后使抗蚀剂膜显影而形成抗蚀剂图案。

44. 发明授权

US06689536B2 Pattern formation material and pattern formation method 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06689536B2
公开(公告)日：2004-02-10
申请号：US10033899
申请日：2002-01-03
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03C1492
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R3 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R2 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译：通过在基板上涂布含有由化学式1表示的第一单元的聚合物和由化学式2表示的第二单元的聚合物形成抗蚀剂膜，其中R1和R3相同或不同，选自烷基，氯原子和含氟原子的烷基; R2是由酸释放的保护基; m为0〜5的整数。接着，利用曝光时间短于180nm波长的曝光光照射抗蚀剂膜，通过在图案曝光后使抗蚀剂膜显影而形成抗蚀剂图案。

45. 发明授权

US07060775B2 Polymer compound, resist material and pattern formation method 失效
标题翻译：高分子化合物，抗蚀剂材料和图案形成方法
公开(公告)号：US07060775B2
公开(公告)日：2006-06-13
申请号：US10954373
申请日：2004-10-01
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： C08F12/30
CPC分类号： G03F7/0046 , C08F12/20 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 5 and a second unit represented by a general formula of the following Chemical Formula 6: wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5, R6 and R11 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R12 is a fluorine atom, or a straight-chain fluoridated alkyl group or a branched or cyclic fluoridated alkyl group with a carbon number not less than 1 and not more than 20; 0
摘要翻译：抗蚀剂材料的基础聚合物含有包含由以下化学式5的通式表示的第一单元和由以下化学式6的通式表示的第二单元的聚合物化合物：其中R 1， R 2，R 2，R 3，R 7，R 8和R 9， SUP>相同或不同，为氢原子，氟原子或直链烷基，支链或环状烷基或碳数不少于1的氟化烷基; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5，R 6和R 11相同或不同，为氢原子，直链烷基，支链或环状烷基或碳数为1以上且20以下的氟化烷基，或被酸释放的保护基; R 12是碳原子数为1以上且20以下的氟原子或直链氟化烷基或支链或环状氟化烷基， 0

46. 发明授权

US07041428B2 Pattern-forming material and method of forming pattern 失效
标题翻译：图案形成材料及形成图案的方法
公开(公告)号：US07041428B2
公开(公告)日：2006-05-09
申请号：US10415272
申请日：2002-09-12
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Tsuyohiko Fujigaya
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Tsuyohiko Fujigaya
IPC分类号： G03C1/73 , G03F7/39 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115 , Y10S430/146 , Y10S430/167 , Y10S430/168
摘要： A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and, and an acid generator:Chemical Formula 1: wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; and R2 is a protecting group released by an acid.
摘要翻译：本发明的图案形成材料含有包含由化学式1表示的单元的基础聚合物和酸产生剂：化学式1：其中R 1是氢原子，氯原子，氟原子，烷基或含氟原子的烷基; R 2是由酸释放的保护基。

47. 发明申请

US20050266337A1 Resist material and pattern formation method 有权
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US20050266337A1
公开(公告)日：2005-12-01
申请号：US11128438
申请日：2005-05-13
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03C1/492 , G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0397
摘要： A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7 and R8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.
摘要翻译：抗蚀剂材料具有含有包含由以下化学式1的通式表示的第一单元与由下列化学式2的通式表示的第二单元的共聚物的化合物的基础聚合物：其中R 1 R 2，R 3，R 7，R 8和R 8相同或不同，碳原子数为1以上且20以下的氢原子，氟原子或直链烷基，支链或环状烷基或氟化烷基， R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基或氟化烷基，其中具有碳数不小于1，不大于20，或由酸释放的保护基; R 9为碳原子数为1以上且20以下的氟原子，直链烷基，支链状或环状烷基或氟化烷基。

48. 发明授权

US07588876B2 Resist material and pattern formation method 失效
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US07588876B2
公开(公告)日：2009-09-15
申请号：US11128441
申请日：2005-05-13
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03F7/004 , C08F12/30
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108
摘要： A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.
摘要翻译：抗蚀剂材料包括含有具有由以下化学式1的通式表示的单元的化合物的基础聚合物：其中R 1，R 2和R 3相同或不同，为氢原子，氟原子，直链烷基，支链或环状烷基或碳数不小于1且不大于20的氟化烷基; R4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R5为氢原子，直链烷基，支链或环状烷基或碳数为1以上20以下的氟化烷基或被酸释放的保护基; R6为具有环状酯化合物的基团，具有羟基的脂环族化合物的基团或具有包含六氟异丙醇的化合物的基团。

49. 发明申请

US20050266338A1 Resist material and pattern formation method 失效
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US20050266338A1
公开(公告)日：2005-12-01
申请号：US11128441
申请日：2005-05-13
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03F7/004 , G03F7/039 , G03C1/492
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108
摘要： A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.
摘要翻译：抗蚀剂材料包括含有具有由以下化学式1的通式表示的单元的化合物的基础聚合物：其中R 1，R 2和R 2， 3个相同或不同，为氢原子，氟原子，直链烷基，支链或环状烷基或碳数不小于1且不大于1的氟化烷基 20; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5是氢原子，直链烷基，支链或环状烷基或碳数不少于1的氟化烷基或保护基由酸释放; R 6是具有环状酯化合物的基团，具有羟基的脂环式化合物的基团或具有包含六氟异丙醇的化合物的基团。

50. 发明授权

US06511786B2 Pattern formation material and pattern formation method 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06511786B2
公开(公告)日：2003-01-28
申请号：US09924093
申请日：2001-08-08
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/108
摘要： A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要翻译：本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂：其中R1和R2相同或不同并选自烷基，氯原子和含有氯原子的烷基; R3，R4，R5和R6是氢原子或氟原子，其中至少一个是氟原子; 而R7是由酸释放的保护基。

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