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    • 45. 发明授权
    • Silicon-germanium heterojunction bipolar transistor
    • 硅 - 锗异质结双极晶体管
    • US08378457B2
    • 2013-02-19
    • US13239250
    • 2011-09-21
    • Fan ChenXiongbin ChenWensheng QianZhengliang Zhou
    • Fan ChenXiongbin ChenWensheng QianZhengliang Zhou
    • H01L27/102
    • H01L29/7378H01L21/26513H01L29/0821H01L29/41708
    • A SiGe HBT formed on a silicon substrate is disclosed. An active area is isolated by field oxide regions; a collector region is formed in the active area and extends into the bottom of the field oxide regions; pseudo buried layers are formed at the bottom of the field oxide regions, wherein each pseudo buried layer is separated by a lateral distance from the active area and connected to a lateral extension part of the collector region; first deep hole contacts are formed on top of the pseudo buried layers in the field oxide regions to pick up collector electrodes; a plurality of second deep hole contacts with a floating structure, are formed in the field oxide region on top of a lateral extension part of the collector region, wherein N-type implantation regions are formed at the bottom of the second deep hole contacts.
    • 公开了一种形成在硅衬底上的SiGe HBT。 有源区域由场氧化物区域隔离; 在有源区域中形成集电极区域并延伸到场氧化物区域的底部; 伪掩埋层形成在场氧化物区域的底部,其中每个伪掩埋层与有源区域的横向距离分离并连接到集电极区域的横向延伸部分; 第一深孔触点形成在场氧化物区域中的伪掩埋层的顶部上以拾取集电极; 在集电区域的横向延伸部分的顶部上的场氧化物区域中形成多个具有浮动结构的第二深孔触点,其中在第二深孔触点的底部形成有N型注入区域。