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41. 发明申请

US20060254616A1 Temperature control of a substrate during wet processes 审中-公开
标题翻译：湿法加工过程中基材的温度控制
公开(公告)号：US20060254616A1
公开(公告)日：2006-11-16
申请号：US11126417
申请日：2005-05-11
申请人： Brian Brown , Dennis Yost , James Papanu , Jianshe Tang , Alexander Ko
发明人： Brian Brown , Dennis Yost , James Papanu , Jianshe Tang , Alexander Ko
IPC分类号： C23G1/00 , B08B3/00
CPC分类号： H01L21/67248 , H01L21/67109
摘要： Embodiments of the invention provide methods of applying a liquid to a backside of a substrate to bring the substrate to the temperature of the liquid. By controlling the temperature of the substrate the temperature of the semiconductor processing liquid may be maintained at a particular temperature or a type of reaction occurring in the semiconductor processing liquid may be enhanced or maintained, such as in reactions where relatively small amounts of liquid are used or expensive chemicals are used.
摘要翻译：本发明的实施例提供了将液体施加到基底的背面以使基底达到液体温度的方法。通过控制衬底的温度，可以将半导体处理液的温度保持在特定温度，或者可以增强或维持在半导体处理液中发生的反应类型，例如在使用相对少量液体的反应中或使用昂贵的化学品。

42. 发明授权

US07052365B2 Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus 有权
标题翻译：半导体晶片化学机械平面化过程监控和终点检测方法及装置
公开(公告)号：US07052365B2
公开(公告)日：2006-05-30
申请号：US11097779
申请日：2005-04-01
申请人： David A. Dornfeld , Jianshe Tang
发明人： David A. Dornfeld , Jianshe Tang
IPC分类号： B24B1/00
CPC分类号： B24B37/013 , B24B49/003 , B24B49/04 , B24B53/017
摘要： The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad, can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad, for example, can be effected or the process can be stopped or an alarm signal can be generated when unacceptable process abnormalities occur.
摘要翻译：特别是产品的化学 - 机械抛光（CMP）特别是通过监测在CMP期间产生的声发射来控制。产生具有反映声发射能量的声发射的信号。监测信号，并且响应于声发射能量的变化来调整CMP处理。可以使用声发射能量信号的变化来确定CMP的终点，特别是当制造用于平坦化/抛光给定表面的半导体晶片时。也可以利用声发射能量信号来检测由包括例如抛光垫的磨损在内的过程变化引起的声发射能量信号的长期变化，从而使所需的或必需的工艺调整，例如抛光例如，可以实现垫或过程可以停止，或者当发生不可接受的过程异常时可以产生报警信号。

43. 发明申请

US20050215178A1 Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus 有权
标题翻译：半导体晶片化学机械平面化过程监测和终点检测方法及装置
公开(公告)号：US20050215178A1
公开(公告)日：2005-09-29
申请号：US11097779
申请日：2005-04-01
申请人： David Dornfeld , Jianshe Tang
发明人： David Dornfeld , Jianshe Tang
IPC分类号： B24B37/013 , B24B49/00 , B24B49/04 , B24B53/007 , B24B53/017
CPC分类号： B24B37/013 , B24B49/003 , B24B49/04 , B24B53/017
摘要： The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad, can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad, for example, can be effected or the process can be stopped or an alarm signal can be generated when unacceptable process abnormalities occur.
摘要翻译：特别是产品的化学 - 机械抛光（CMP）特别是通过监测在CMP期间产生的声发射来控制。产生具有反映声发射能量的声发射的信号。监测信号，并且响应于声发射能量的变化来调整CMP处理。可以使用声发射能量信号的变化来确定CMP的终点，特别是当制造用于平坦化/抛光给定表面的半导体晶片时。也可以利用声发射能量信号来检测由包括例如抛光垫的磨损在内的过程变化引起的声发射能量信号的长期变化，从而使所需的或必需的工艺调整，例如抛光例如，可以实现垫或过程可以停止，或者当发生不可接受的过程异常时可以产生报警信号。

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