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41. 发明授权

US08419950B2 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US08419950B2
公开(公告)日：2013-04-16
申请号：US12884617
申请日：2010-09-17
申请人： Hiroyuki Kashiwagi , Kazuya Fukuhara
发明人： Hiroyuki Kashiwagi , Kazuya Fukuhara
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/50 , G03F1/54 , G03F7/2014
摘要： According to one embodiment, a pattern forming method is disclosed. The method includes contacting a template with light curable resin on a substrate. The template comprises a concave-convex pattern including concave portions and convex portions, and a metal layer provided on a convex portion of the concave-convex pattern. The concave-convex pattern is to be contacted with the light curable resin. The pattern forming method further includes irradiating the light curable resin with light of a predetermined wavelength under a condition ε1=−2ε2. Where ε1 is a complex relative permittivity of the metal layer corresponding to the predetermined wavelength, ε2 is a complex relative permittivity of the light curable resin corresponding to the predetermined wavelength.
摘要翻译：根据一个实施例，公开了一种图案形成方法。该方法包括使模板与基材上的光固化树脂接触。模板包括凹凸图案，其包括凹部和凸部，以及设置在凹凸图案的凸部上的金属层。凹凸图案与光固化树脂接触。图案形成方法还包括在条件1 = -2＆amp; 2的条件下用光可固化树脂照射预定波长的光。其中，1是对应于预定波长的金属层的复相对介电常数，2是对应于预定波长的光固化树脂的复相对介电常数。

42. 发明授权

US08142960B2 Exposure method, mask data producing method, and semiconductor device manufacturing method 有权
标题翻译：曝光方法，掩模数据制作方法以及半导体装置的制造方法
公开(公告)号：US08142960B2
公开(公告)日：2012-03-27
申请号：US12536758
申请日：2009-08-06
申请人： Satoshi Nagai , Kazuya Fukuhara
发明人： Satoshi Nagai , Kazuya Fukuhara
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F7/70433
摘要： An exposure method has irradiating a mask with light based on an exposure performing condition, a first mask pattern and a second mask pattern being formed in the mask, and projecting images of the first mask pattern and second mask pattern onto a wafer through a projection lens, a lower-layer film material and a photoresist being sequentially laminated on the wafer, wherein the exposure performing condition is a condition on which, when exposure is performed on a predetermined exposure condition, the predetermined exposure condition is adjusted such that a difference between a wafer position at which a best focus is obtained for the image of the first mask pattern and a wafer position at which a best focus is obtained for the image of the second mask pattern falls within a predetermined range, the wafer position of the first mask pattern and the wafer position of the second mask pattern being predicted using film thicknesses and optical characteristics of the photoresist and the lower-layer film material.
摘要翻译：曝光方法基于曝光执行条件照射具有光的掩模，在掩模中形成第一掩模图案和第二掩模图案，并且通过投影透镜将第一掩模图案和第二掩模图案的图像投影到晶片上，下层薄膜材料和光致抗蚀剂依次层压在晶片上，其中曝光执行条件是当在预定曝光条件下进行曝光时，调整预定曝光条件使得在对于第一掩模图案的图像获得最佳聚焦的晶片位置和对于第二掩模图案的图像获得最佳聚焦的晶片位置落在预定范围内，第一掩模图案的晶片位置并且使用光致抗蚀剂和下层的膜厚度和光学特性来预测第二掩模图案的晶片位置层膜材料。

43. 发明申请

US20110300472A1 Exposure Apparatus Inspection Mask and Exposure Apparatus Inspection Method 有权
标题翻译：曝光装置检查面具和曝光装置检查方法
公开(公告)号：US20110300472A1
公开(公告)日：2011-12-08
申请号：US12886157
申请日：2010-09-20
申请人： Nobuhiro KOMINE , Kazuya Fukuhara
发明人： Nobuhiro KOMINE , Kazuya Fukuhara
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/44 , G03F7/70641 , G03F7/70683
摘要： According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.
摘要翻译：根据一个实施例，曝光装置检查掩模包括基板和第一图案部分。基板具有反射曝光光的主表面。第一图案部分设置在主表面上。第一图案部分包括第一下层和多个第一反射层。第一下层设置在主表面上，并且包括沿着平行于主表面的第一方向以规定间距周期性地排列并且吸收曝光光的多个第一吸收层。多个第一反射层设置在与基板相对的第一下层的一侧上，沿着第一方向以间距周期性地布置，暴露多个第一吸收层中的每一个的至少一部分，并且具有更高的反射率用于曝光光比第一吸收层。

44. 发明授权

US08072601B2 Pattern monitor mark and monitoring method suitable for micropattern 有权
标题翻译：模式监视标记和适用于微图案的监控方法
公开(公告)号：US08072601B2
公开(公告)日：2011-12-06
申请号：US12037757
申请日：2008-02-26
申请人： Kazuya Fukuhara , Kazutaka Ishigo
发明人： Kazuya Fukuhara , Kazutaka Ishigo
IPC分类号： G01B11/00 , G01B11/14 , H01L21/00 , H01L21/66 , G01R31/26
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of forming a monitor mark includes forming an insulating film on a semiconductor substrate, and forming a first repetitive line pattern group and a second repetitive line pattern group by patterning the insulating film on the semiconductor substrate, such that the first repetitive line pattern group and the second repetitive line pattern group face each other with a predetermined space therebetween.
摘要翻译：形成监视标记的方法包括在半导体衬底上形成绝缘膜，并且通过对半导体衬底上的绝缘膜进行构图来形成第一重复线图案组和第二重复线图案组，使得第一重复线图案组并且第二重复线图案组之间以预定的间隔彼此面对。

45. 发明授权

US07960075B2 Photomask unit, exposing method and method for manufacturing semiconductor device 有权
标题翻译：光掩模单元，制造半导体器件的曝光方法和方法
公开(公告)号：US07960075B2
公开(公告)日：2011-06-14
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G02B5/08
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护所述掩模基板的防护薄膜组件，其中，所述防护薄膜组件使得入射角的入射光的透射率; （0°<θ; <90°）高于入射角0°的入射光的透射率。

46. 发明申请

US20100308513A1 TEMPLATE AND PATTERN FORMING METHOD 审中-公开
标题翻译：模式和图案形成方法
公开(公告)号：US20100308513A1
公开(公告)日：2010-12-09
申请号：US12796343
申请日：2010-06-08
申请人： Hiroyuki Kashiwagi , Kazuya Fukuhara , Ryoichi Inanami , Takuya Kono
发明人： Hiroyuki Kashiwagi , Kazuya Fukuhara , Ryoichi Inanami , Takuya Kono
IPC分类号： B29C35/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a template for imprint lithography includes a transparent substrate having a pattern with a recess portion and a protruding portion, and a light-shielding portion formed on a bottom surface of the recess portion and on a top surface of the protruding portion. A side wall of the protruding portion is inclined.
摘要翻译：根据一个实施例，用于压印光刻的模板包括具有凹陷部分和突出部分的图案的透明基板，以及形成在凹部的底表面上并且在突出部分的顶表面上的遮光部分。突出部的侧壁倾斜。

47. 发明授权

US07807323B2 Exposure condition setting method, semiconductor device manufacturing method, and exposure condition setting program 失效
标题翻译：曝光条件设定方法，半导体器件制造方法和曝光条件设定程序
公开(公告)号：US07807323B2
公开(公告)日：2010-10-05
申请号：US11783469
申请日：2007-04-10
申请人： Kazuya Fukuhara
发明人： Kazuya Fukuhara
IPC分类号： G03F9/00
CPC分类号： G03F7/701 , G03F7/705 , Y10S430/146
摘要： A method of optimally setting exposure conditions when light emitted from an effective light source is applied to a mask pattern formed on a mask for exposure and diffracted light emitted from the mask is projected onto a substrate via a projection lens to expose the substrate thereto, the method comprising defining an image evaluation amount which represents characteristics of an optical image or a resist pattern and which contains a factor indicating the influence of a dimensional error of the mask pattern on the image characteristics, determining an initial condition of the effective light source and the mask pattern, defining at least one of a parameter of the effective light source and a parameter of the mask pattern, and changing at least one of the parameters to calculate the image evaluation amount, and deciding an optimum parameter on the basis of the result of the calculation.
摘要翻译：一种将从有效光源发出的光线最佳地设置曝光条件的方法施加到形成在用于曝光的掩模上的掩模图案并且从掩模发射的衍射光通过投影透镜投影到基板上以将基板曝光，方法包括定义表示光学图像或抗蚀剂图案的特性的图像评估量，并且其包含指示掩模图案的尺寸误差对图像特性的影响的因子，确定有效光源的初始状态和掩模图案，限定有效光源的参数和掩模图案的参数中的至少一个，并且改变至少一个参数以计算图像评估量，并且基于该结果来确定最佳参数计算。

48. 发明授权

US07691542B2 Exposure system, test mask for flare testing, method for evaluating lithography process, method for evaluating exposure tools, method for generating corrected mask pattern, and method for manufacturing semiconductor device 失效
标题翻译：曝光系统，光斑测试用的测试掩模，光刻工艺的评估方法，曝光工具的评价方法，校正掩模图案的产生方法以及半导体器件的制造方法
公开(公告)号：US07691542B2
公开(公告)日：2010-04-06
申请号：US11034958
申请日：2005-01-14
申请人： Kazuya Fukuhara
发明人： Kazuya Fukuhara
IPC分类号： G03F9/00
CPC分类号： G03F7/70625 , G03F1/44 , G03F1/50 , G03F1/70
摘要： An exposure system has an exposure tool configured to project images of a grating pattern and a test pattern having an opening onto an identical exposure field on a wafer, a measuring module configured to measure critical dimension variations of the projected grating pattern by setting a position of the projected test pattern as a measurement standard, and a pattern density influence estimator configured to estimate an influence of a pattern density of a mask to be mounted in the exposure tool upon the critical dimension variations.
摘要翻译：曝光系统具有曝光工具，被配置为将具有开口的光栅图案的图像和具有开口的测试图案投影到晶片上相同的曝光场上，测量模块被配置为通过设置投影光栅图案的位置来测量投影光栅图案的临界尺寸变化作为测量标准的投影测试图案，以及被配置为估计安装在曝光工具中的掩模的图案密度对关键尺寸变化的影响的图案密度影响估计器。

49. 发明申请

US20100001386A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100001386A1
公开(公告)日：2010-01-07
申请号：US12463850
申请日：2009-05-11
申请人： Kazuyuki Misumi , Katsuyuki Fukudome , Kazushi Hatauchi , Kazuya Fukuhara , Kunihiro Yamashita
发明人： Kazuyuki Misumi , Katsuyuki Fukudome , Kazushi Hatauchi , Kazuya Fukuhara , Kunihiro Yamashita
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L24/85 , H01L21/565 , H01L23/3107 , H01L23/4952 , H01L23/49541 , H01L23/49551 , H01L23/49582 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48253 , H01L2224/48599 , H01L2224/49052 , H01L2224/49109 , H01L2224/49113 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73265 , H01L2224/78301 , H01L2224/85181 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/0102 , H01L2924/01023 , H01L2924/01033 , H01L2924/01046 , H01L2924/01065 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device and a manufacturing method therefor wherein a wire for coupling an inner lead and a semiconductor chip with each other can be prevented from being electrically short-circuited to any other conductive part are provided. An inner lead portion has a tip arranged outside the outer circumferential end of the semiconductor chip as viewed on a plane. A power supply bar has a jutted portion extended between the outer circumferential end of the semiconductor chip and the tip of the inner lead portion as viewed on a plane. The upper face of the jutted portion is in a position lower than the upper face of the tip of the inner lead portion. A bonding wire for electrically coupling the semiconductor chip and the inner lead portion with each other has a bent portion outside the outer circumferential end of the semiconductor chip as viewed on a plane.
摘要翻译：可以防止其中用于将内引线和半导体芯片彼此耦合的导线与任何其它导电部件电短路的半导体器件及其制造方法。在平面上观察时，内引线部具有设置在半导体芯片的外周端的外侧的端部。电源棒具有在平面上观察时在半导体芯片的外周端部和内引线部分的顶端之间延伸的突出部分。突出部的上表面位于比内引线部的前端的上表面低的位置。用于将半导体芯片和内引线部分彼此电耦合的接合线在平面上具有在半导体芯片的外周端外侧的弯曲部分。

50. 发明授权

US07537871B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07537871B2
公开(公告)日：2009-05-26
申请号：US11543208
申请日：2006-10-05
申请人： Kazuya Fukuhara , Eishi Shiobara
发明人： Kazuya Fukuhara , Eishi Shiobara
IPC分类号： G03C5/00 , G03F9/00 , G01N21/41
CPC分类号： G03F7/70341 , G03F7/70625
摘要： A method of manufacturing a semiconductor device using immersion exposure in which exposure is carried out with an immersion exposure liquid interposed between a projection lens and a substrate, includes preparing a photomask on which a plurality of patterns are formed, projecting the patterns formed on the photomask, on a predetermined surface via the projection lens and the immersion exposure liquid, acquiring dimensional information on dimension acquiring patterns based on the patterns projected on the predetermined surface, adjusting a refractive index of the immersion exposure liquid on the basis of the dimensional information, and projecting patterns formed on the photomask, on a substrate via the projection lens and the immersion exposure liquid with the refractive index adjusted.
摘要翻译：一种使用浸渍曝光制造半导体器件的方法，其中浸渍曝光液体介于投影透镜和基片之间进行曝光，包括制备其上形成有多个图案的光掩模，突出形成在光掩模上的图案经由投影透镜和浸渍曝光液体在预定表面上，基于投影在预定表面上的图案获取关于尺寸获取图案的尺寸信息，基于尺寸信息调整浸没曝光液体的折射率，以及通过投影透镜和折射率调节的浸渍曝光液体在光掩模上形成在基板上的投射图案。

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