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41. 发明申请

US20090160308A1 DIAMOND ELECTRON RADIATION CATHODE, ELECTRON SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSER 失效
标题翻译：钻石电子辐射阴极，电子源，电子显微镜和电子束曝光
公开(公告)号：US20090160308A1
公开(公告)日：2009-06-25
申请号：US12095430
申请日：2007-06-27
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/304
CPC分类号： H01J1/304 , B82Y10/00 , B82Y40/00 , H01J37/073 , H01J37/3174 , H01J2201/30457 , H01J2237/06341 , H01J2237/26
摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.
摘要翻译：目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大大于0.1 mm2。

42. 发明申请

US20080067493A1 Diamond Electron Emission Cathode,Electron Emission Source,Electron Microscope,And Electron Beam Exposure Device 失效
标题翻译：金刚石电子发射阴极，电子发射源，电子显微镜和电子束曝光装置
公开(公告)号：US20080067493A1
公开(公告)日：2008-03-20
申请号：US11665472
申请日：2006-06-19
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/30 , C30B29/04 , H01L29/06
CPC分类号： H01J1/15 , H01J1/14 , H01J37/06 , H01J2237/06308 , H01J2237/06316
摘要： An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2×1015 cm−3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 μm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.
摘要翻译：本发明的目的是提供一种使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置以及真空管，特别是电子显微镜和电子束曝光装置，以及使用这种阴极和源的电子装置。根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石。金刚石电子发射阴极具有锐化锐角部分和加热部分的柱状。一个电子发射部分设置在锐化的尖锐部分。电子发射部分和加热部分包括金刚石半导体。金刚石半导体是具有2×10 15 -3 -3以上的p型杂质的p型半导体。半导体存在于电子发射部分中。在电子发射阴极的表面上形成金属层。金属层存在于加热部分的至少一部分中。从电子发射部到金属层的端部的最短距离为500μm以下。通过一对电流导入端子向加热部供给加热用电流，能够从电子发射部射出一些导入的电子。

43. 发明授权

US06316826B1 Semiconductor mounting package 失效
标题翻译：半导体安装封装
公开(公告)号：US06316826B1
公开(公告)日：2001-11-13
申请号：US09408875
申请日：1999-09-29
申请人： Yoshiyuki Yamamoto , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： H01L2315
CPC分类号： H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor mounting package includes at least one diamond member having a first surface on which at least one semiconductor chip is mounted and a second surface opposite the first surface, and a high thermal conductivity metal member adhered to the second surface of the diamond member.
摘要翻译：半导体安装封装包括至少一个具有第一表面的金刚石构件，其上安装有至少一个半导体芯片和与第一表面相对的第二表面，以及粘附到金刚石构件的第二表面的高导热性金属构件。

44. 发明授权

US08658517B2 Method of manufacturing GaN-based film 有权
公开(公告)号：US08658517B2
公开(公告)日：2014-02-25
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

45. 发明授权

US08294245B2 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture 有权
标题翻译： GaN单晶质量及其制造方法，半导体器件及其制造方法
公开(公告)号：US08294245B2
公开(公告)日：2012-10-23
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
发明人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译：提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

46. 发明申请

US20120122301A1 METHOD OF MANUFACTURING GaN-BASED FILM 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US20120122301A1
公开(公告)日：2012-05-17
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

47. 发明申请

US20120118222A1 METHOD OF MANUFACTURING GaN-BASED FILM 审中-公开
标题翻译：制造GaN基膜的方法
公开(公告)号：US20120118222A1
公开(公告)日：2012-05-17
申请号：US13283820
申请日：2011-10-28
申请人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： C30B19/00 , C30B23/02 , C30B25/02
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，所述复合基板包括支撑基板，其主表面的热膨胀系数大于1.0倍且小于其主表面的1.2倍 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

48. 发明授权

US07995267B2 Wavelength converter manufacturing method and wavelength converter 有权
标题翻译：波长转换器制造方法和波长转换器
公开(公告)号：US07995267B2
公开(公告)日：2011-08-09
申请号：US12510267
申请日：2009-07-28
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： G02F1/35
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
摘要： Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with the following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).
摘要翻译：提供一种波长转换器制造方法和波长转换器，由此能够提高透射率。制造波长转换器（10a）的方法具有以下步骤。起初，晶体生长。然后通过将晶体分成两个或更多个使得畴相反的方式形成第一晶体（11）和第二晶体（12）。然后将第一和第二晶体（11）和（12）互锁，使得第一和第二晶体（11）和（12）的极性方向沿着光波导（13）周期性地反转的畴反转结构），域反转结构满足入射光束（101）的准相位匹配条件。

49. 发明申请

US20110156213A1 METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE 有权
标题翻译：制备氮化物基质和氮化物基质的方法
公开(公告)号：US20110156213A1
公开(公告)日：2011-06-30
申请号：US13061307
申请日：2009-08-26
申请人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02021 , C30B25/00 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02013 , H01L21/02389
摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.
摘要翻译：制造氮化物衬底的方法包括以下步骤。首先，生长氮化物晶体。然后，从氮化物晶体切割包括前表面的氮化物衬底。在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

50. 发明申请

US20110104438A1 AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT 审中-公开
标题翻译： Al x Ga（1-x）N单晶，生产Al x Ga（1-x）N单晶和光学元件的方法
公开(公告)号：US20110104438A1
公开(公告)日：2011-05-05
申请号：US13001749
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
IPC分类号： C30B29/38 , C30B23/02 , C30B23/06 , B32B3/00 , B32B5/00 , C09K3/00
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B13/143 , Y10T428/24355 , Y10T428/2973
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译：制造Al x Ga（1-x）N（0

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