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41. 发明申请

US20060177962A1 Process for producing n-type semiconductor diamond and n-type semiconductor diamond 审中-公开
标题翻译：制造n型半导体金刚石和n型半导体金刚石的方法
公开(公告)号：US20060177962A1
公开(公告)日：2006-08-10
申请号：US10541184
申请日：2003-12-22
申请人： Akihiko Namba , Yoshiyuki Yamamoto , Hitoshi Sumiya , Yoshiki Nishibayashi , Takahiro Imai
发明人： Akihiko Namba , Yoshiyuki Yamamoto , Hitoshi Sumiya , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01L21/00
CPC分类号： H01L21/0415 , C30B29/04 , H01L21/265 , H01L29/167
摘要： A method of manufacturing n-type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N, or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealing the diamond in a temperature range of from 800° C. or more to less than 1800° C. to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n-type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 107 Ω/□ or less.
摘要翻译：通过本发明制造n型半导体金刚石的方法的特征在于通过将Li离子注入到Li中并掺入N的金刚石，使得其中含有10ppm将包含在包含10ppm或更多N的单晶金刚石中，或否则，通过注入离子来掺杂具有Li和N离子的单晶金刚石，使得注入后的Li和N浓度各自为10ppm以上的离子注入深度将重叠，然后在金刚石中退火温度范围为800℃以上至小于1800℃，以电激活Li和N并恢复金刚石晶体结构。在本发明中，n型半导体金刚石从晶体表面到相同的深度掺入了Li和N的10ppm以上，其中薄膜电阻为10Ω/ □以下

42. 发明申请

US20050155543A1 Diamond single crystal substrate manufacturing method and diamond single crystal substrate 有权
标题翻译：金刚石单晶衬底制造方法和金刚石单晶衬底
公开(公告)号：US20050155543A1
公开(公告)日：2005-07-21
申请号：US11032176
申请日：2005-01-11
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： H01L21/205 , C30B25/20 , C30B29/04 , C30B33/00 , C30B7/00 , B01J3/06 , B01J3/08 , C01B31/06 , C30B9/00 , C30B11/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译：一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

43. 发明授权

US06716917B2 Rubber-reinforced styrene transparent resin composition and method of producing the same 有权
标题翻译：橡胶增强苯乙烯透明树脂组合物及其制造方法
公开(公告)号：US06716917B2
公开(公告)日：2004-04-06
申请号：US09912407
申请日：2001-07-26
申请人： Ryota Kido , Hiroshi Shibata , Hajime Takamura , Akihiro Ohmura , Yoshiyuki Yamamoto
发明人： Ryota Kido , Hiroshi Shibata , Hajime Takamura , Akihiro Ohmura , Yoshiyuki Yamamoto
IPC分类号： C08L3306
CPC分类号： C08L33/06 , C08L25/14 , C08L51/04 , C08L55/02 , C08L2666/24 , C08L2666/04
摘要： A rubber-reinforced styrene transparent resin composition contains a styrene copolymer reinforced with a rubber polymer, wherein the monomer composition of an acetone soluble resin component contained in the resin composition contains 5 to 70% by weight of aromatic vinyl monomer (a1), 30 to 95% by weight of unsaturated carboxylic acid alkyl ester monomer (a2), 0 to 50% by weight of vinyl cyanide monomer (a3), and 0 to 50% by weight of another monomer copolymerizable with these monomers, and the acid value of the acetone soluble resin component is 0.01 to 1 mgKOH/g.
摘要翻译：橡胶增强苯乙烯透明树脂组合物含有用橡胶聚合物增强的苯乙烯共聚物，其中树脂组合物中所含的丙酮可溶性树脂组分的单体组成含有5-70重量％的芳族乙烯基单体（a1），30〜 95重量％的不饱和羧酸烷基酯单体（a2），0〜50重量％的乙烯基氰单体（a3）和0〜50重量％的可与这些单体共聚的其它单体，丙酮可溶性树脂成分为0.01〜1mgKOH / g。

44. 发明授权

US06335863B1 Package for semiconductors, and semiconductor module that employs the package 失效
标题翻译：半导体封装，采用封装的半导体模块
公开(公告)号：US06335863B1
公开(公告)日：2002-01-01
申请号：US09228423
申请日：1999-01-12
申请人： Yoshiyuki Yamamoto , Hirohisa Saito , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Hirohisa Saito , Takahiro Imai
IPC分类号： H05K720
CPC分类号： H01L23/49562 , H01L21/4871 , H01L23/142 , H01L23/3732 , H01L2924/0002 , H01L2924/1423 , H01L2924/00
摘要： A low-cost package for semiconductors that is superior in heat dissipation and capable of preventing the cracking of semiconductor elements at the time of mounting, and a semiconductor module employing the package. The package for semiconductors comprises a CVD diamond substrate 22 made of an independent diamond lamina, and a highly heat-conductive metallic member 21 bonded with the substrate. Semiconductor elements such as MMICs are mounted on an area 25 for mounting semiconductor elements. The CVD diamond substrate 22 may be replaced by a composite in which a CVD diamond layer is formed on a base material having thermal conductivity of 100 W/m·K or more. The provision of protuberances 26 of the metallic member 21 around the CVD diamond substrate 22 prevents the leakage of microwaves and millimeter waves.
摘要翻译：一种半导体的低成本封装，其散热优良并且能够防止在安装时半导体元件的开裂，以及采用该封装的半导体模块。用于半导体的封装包括由独立的金刚石薄片制成的CVD金刚石基底22和与基底结合的高导热金属部件21。诸如MMIC的半导体元件安装在用于安装半导体元件的区域25上。 CVD金刚石基板22可以由在其导热率为100W / m·K以上的基材上形成CVD金刚石层的复合体代替。在CVD金刚石基底22周围设置金属构件21的突起26防止微波和毫米波的泄漏。

45. 发明授权

US5745362A Digital PID control apparatus 失效
标题翻译：数字PID控制装置
公开(公告)号：US5745362A
公开(公告)日：1998-04-28
申请号：US666089
申请日：1996-06-19
申请人： Kazuo Hiroi , Yoshiyuki Yamamoto
发明人： Kazuo Hiroi , Yoshiyuki Yamamoto
IPC分类号： G05B11/36 , G05B11/42 , G05B13/02 , G05B21/02
CPC分类号： G05B11/42 , G05B13/024
摘要： In the digital PID (P:proportional, I:integral, D:derivative) control apparatus of the present invention, in which a deviation is obtained from a controlling amount of an object to be controlled, and a target value, a velocity type PI control operation is carried out on the deviation, a velocity type D control operation is carried out on the deviation or the controlling amount, these velocity type control operation outputs are synthesized, and then converted into a position type manipulation signal, and this signal is supplied to the object to be controlled, the derivation processing unit includes the judgment unit for judging whether K=2.multidot..DELTA.t/(.DELTA.t+2.eta..multidot.TD).ltoreq.1, or K>1 by using a control operation period .DELTA.t, a derivative time TD and a derivative gain 1/.eta., and the operation unit which carries out a lagged derivative operation by a bilinear transfer method when K.ltoreq.1, or carries out an exact derivative operation when K>1.
摘要翻译：在本发明的数字PID（P：比例，I：积分，D：微分）控制装置中，从被控制物的控制量和目标值获得偏差，速度型PI 对偏差进行控制操作，对偏差或控制量执行速度类型D控制操作，合成这些速度型控制操作输出，然后转换为位置型操作信号，并且提供该信号导出处理单元包括用于通过使用控制操作期间DELTA t来判断K = 2×DELTA t /（DELTA t + 2 eta x TD）= 1或K> 1的判断单元，衍生时间TD和微分增益1 / eta，以及当K <1时通过双线性传递方法执行滞后导数运算的操作单元，或当K> 1时执行精确导数运算。

46. 发明授权

US5310823A Polyacetal resin composition 失效
标题翻译：聚缩醛树脂组合物
公开(公告)号：US5310823A
公开(公告)日：1994-05-10
申请号：US23147
申请日：1993-02-24
申请人： Masaki Kunitomi , Hiromitsu Ishii , Yoshiyuki Yamamoto
发明人： Masaki Kunitomi , Hiromitsu Ishii , Yoshiyuki Yamamoto
IPC分类号： C08L59/00 , C08L67/02 , C08L59/02 , C08L59/04
CPC分类号： C08L59/00 , C08L67/02
摘要： A polyacetal resin composition having a volume resistivity lower than 10.sup.14 [.OMEGA..multidot.cm], which comprises (A) 100 parts by weight of a polyacetal resin and (B) 1 to 100 parts by weight of a polyether ester block copolymer which is derived from (a) a dicarboxylic acid component composed mainly of terephthalic acid, (b) a glycol component composed mainly of 1,4-butanediol and (c) a poly(ethylene oxide)glycol having a number average molecular weight of 500 to 20,000 and has a poly(ethylene oxide) dicarboxylate unit content of 20 to 95% by weight, has excellent antistatic characteristics and mechanical characteristics, and especially a high impact resistance.
摘要翻译：体积电阻率低于1014 [OMEGA×cm]的聚缩醛树脂组合物，其包含（A）100重量份的聚缩醛树脂和（B）1至100重量份的源自（ a）主要由对苯二甲酸组成的二羧酸组分，（b）主要由1,4-丁二醇组成的二醇组分和（c）数均分子量为500至20,000的聚（环氧乙烷）二醇，并具有聚（环氧乙烷）二羧酸酯单元含量为20〜95重量％，具有优异的抗静电特性和机械特性，特别是耐冲击性优异。

47. 发明授权

US08697564B2 Method of manufacturing GaN-based film 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US08697564B2
公开(公告)日：2014-04-15
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke Fujiwara , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

48. 发明申请

US20130149847A1 METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR 有权
标题翻译：制造GaN基膜及其使用的复合基板的方法
公开(公告)号：US20130149847A1
公开(公告)日：2013-06-13
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

49. 发明申请

US20110265709A1 Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing Apparatus 审中-公开
标题翻译：氮化物半导体晶体制造方法，氮化物半导体晶体和氮化物半导体晶体制造装置
公开(公告)号：US20110265709A1
公开(公告)日：2011-11-03
申请号：US13063937
申请日：2010-01-13
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto
IPC分类号： C30B23/00
CPC分类号： C30B23/00 , C30B29/403 , C30B29/406
摘要： Nitride semiconductor crystal manufacturing method according to which the following steps are carried out. To begin with, a crucible (101) for interiorly carrying source material (17) is prepared. Within the crucible (101), heating of the source material (17) sublimes the source material, and by the condensing of source-material gases caused, nitride semiconductor crystal is grown. In the preparation step, a crucible (101) made from a metal whose melting point is higher than that of the source material (17) is prepared.
摘要翻译：氮化硅半导体晶体制造方法，其中进行以下步骤。首先，准备用于内部携带源材料（17）的坩埚（101）。在坩埚（101）内，源材料（17）的加热升高源材料，并且通过源材料气体的冷凝，生成氮化物半导体晶体。在制备步骤中，制备由熔点高于源材料（17）的金属制成的坩埚（101）。

50. 发明申请

US20110134509A1 WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION ELEMENT 有权
标题翻译：波长转换元件和制造波长转换元件的方法
公开(公告)号：US20110134509A1
公开(公告)日：2011-06-09
申请号：US13057547
申请日：2009-07-28
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： G02F1/355 , B32B38/00 , B32B38/04 , B05D5/06 , C30B7/10 , C30B19/02 , C30B23/02 , C30B25/02
CPC分类号： G02F1/3775 , G02F1/3558 , G02F2202/101 , Y10T156/1075
摘要： A wavelength conversion element having an improved property-maintaining life and a method for manufacturing the wavelength conversion element are provided. A wavelength conversion element 10a has an optical waveguide 13. The wavelength of incoming light 101 input from one end 13a of the optical waveguide 13 is converted and outgoing light 102 is output from the other end 13b of the optical waveguide 13. The wavelength conversion element includes a first crystal 11 composed of AlxGa(1-x)N (0.5≦x≦1); and a second crystal 12 having the same composition as that of the first crystal. The first and second crystals 11 and 12 form a domain-inverted structure in which a polarization direction is periodically reversed along the optical waveguide 13, and the domain-inverted structure satisfies quasi phase matching conditions with respect to the incoming light 101. At least one of the first and second crystals has a dislocation density of 1×103 cm−2 or more and less than 1×107 cm−2.
摘要翻译：提供了具有改善的维持寿命的波长转换元件和用于制造波长转换元件的方法。波长转换元件10a具有光波导13.从光波导13的一端13a输入的入射光101的波长被转换，出射光102从光波导13的另一端13b输出。波长转换元件包括由Al x Ga（1-x）N（0.5＆amp; nlE; x＆nlE; 1）组成的第一晶体11; 和具有与第一晶体相同组成的第二晶体12。第一和第二晶体11和12形成畴偏转结构，其中偏振方向沿着光波导13周期性地反转，并且域反转结构相对于入射光101满足准相位匹配条件。至少一个的第一和第二晶体的位错密度为1×10 3 cm -2以上且小于1×10 7 cm -2。

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