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41. 发明授权

US06556473B2 Magnetic memory with reduced write current 失效
标题翻译：具有减小写入电流的磁记忆体
公开(公告)号：US06556473B2
公开(公告)日：2003-04-29
申请号：US09912321
申请日：2001-07-26
申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
IPC分类号： G11C1100
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/3231 , H01L27/224 , H01L27/228
摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
摘要翻译：提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属纳米颗粒膜。

42. 发明授权

US06605836B2 Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information 失效
标题翻译：磁阻效应装置，磁存储装置，个人数字助理和磁再现头以及磁信息
公开(公告)号：US06605836B2
公开(公告)日：2003-08-12
申请号：US10097571
申请日：2002-03-15
申请人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
发明人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
IPC分类号： H01L31119
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01L43/08 , Y10S428/90 , Y10T29/49043 , Y10T29/49048 , Y10T29/4905 , Y10T29/49052 , Y10T428/24942 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： Magnetoresistance effect devices for attaining magnetically stability and for reducing a switching magnetic field. One of the ferromagnetic layers of the magnetoresistance effect device has a plane shape in which a width of an end portions is wider than a center portion sandwiched by two end portions. The end portions are not symmetrical with respect to an easy magnetization axis or longer axis of the plane shape of ferromagnetic material layer, but are substantially rotationally symmetrical with a center of the plane shape as a pivot. The plane shape may have an S-shape where its magnetic domain is stabilized and the switching magnetic field is reduced. The magnetoresistance effect devices may be used in a magnetic memory apparatus, such as a random access memory, a personal digital assistance, a magnetic reproducing head, and a magnetic information reproducing apparatus.
摘要翻译：用于获得磁稳定性并用于减小开关磁场的磁阻效应器件。磁阻效应器件的铁磁层之一具有端部的宽度比夹在两个端部的中心部分宽的平面形状。端部相对于铁磁材料层的平面形状的易磁化轴或长轴不对称，但是以平面形状的中心作为枢轴基本上是旋转对称的。平面形状可以具有其磁畴稳定并且开关磁场减小的S形。磁阻效应器件可以用在诸如随机存取存储器，个人数字助听器，磁再现头和磁信息再现设备之类的磁存储设备中。

43. 发明申请

US20050254289A1 Magnetic memory device and method of manufacturing the same 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US20050254289A1
公开(公告)日：2005-11-17
申请号：US11171323
申请日：2005-07-01
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.
摘要翻译：一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

44. 发明授权

US07291506B2 Magnetic memory device and method of manufacturing the same 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US07291506B2
公开(公告)日：2007-11-06
申请号：US11171323
申请日：2005-07-01
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L21/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.
摘要翻译：一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

45. 发明授权

US06965138B2 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US06965138B2
公开(公告)日：2005-11-15
申请号：US10702574
申请日：2003-11-07
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

46. 发明申请

US20050020011A1 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US20050020011A1
公开(公告)日：2005-01-27
申请号：US10702574
申请日：2003-11-07
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

47. 发明申请

US20090224342A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20090224342A1
公开(公告)日：2009-09-10
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko NAKAYAMA , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko NAKAYAMA , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译：磁阻效应元件包括参考层，记录层和非磁性层。参考层由磁性材料制成，具有垂直于膜表面的不变磁化。记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。非磁性层布置在参考层和记录层之间。临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

48. 发明授权

US08378437B2 Magnetoresistive effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08378437B2
公开(公告)日：2013-02-19
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译：磁阻效应元件包括参考层，记录层和非磁性层。参考层由磁性材料制成，具有垂直于膜表面的不变磁化。记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。非磁性层布置在参考层和记录层之间。临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

49. 发明授权

US07355824B2 Magnetoresistive effect element and magnetic memory having the same 有权
标题翻译：磁阻效应元件和具有相同的磁存储器
公开(公告)号：US07355824B2
公开(公告)日：2008-04-08
申请号：US10976840
申请日：2004-11-01
申请人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
发明人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
IPC分类号： G11B5/39 , G11C11/00
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/224 , H01L27/228 , Y10T428/1114
摘要： The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy. A peak-to-peak maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.
摘要翻译：磁阻效应元件本发明涉及磁阻效应元件，其具有大的MR比，即使其尺寸减小也具有良好的热稳定性和小的开关磁场;以及使用磁阻效应元件的磁存储器。磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。存储层的每个铁磁层由Ni-Fe-Co三元合金形成。存储层和隧道势垒层之间的界面上的峰 - 峰最大表面粗糙度以及磁性膜和隧道势垒层之间的界面为0.4nm以下。

50. 发明授权

US06826078B2 Magnetoresistive effect element and magnetic memory having the same 有权
标题翻译：磁阻效应元件和具有相同的磁存储器
公开(公告)号：US06826078B2
公开(公告)日：2004-11-30
申请号：US10395073
申请日：2003-03-25
申请人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
发明人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
IPC分类号： G11C1100
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/224 , H01L27/228 , Y10T428/1114
摘要： There are provided a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy which has a composition selected from one of a composition region surrounded by a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %), a straight line of Fe80(at %)Ni20(at %)—Fe30(at %)Ni70(at %) and a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), and a composition region surrounded by a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), a straight line of Co90(at %)Fe10(at %)—Fe70(at %)Ni30(at %) and a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %). A maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.
摘要翻译：提供了磁阻效应元件，即使其尺寸减小，也具有大的MR比，优异的热稳定性和小的开关磁场，以及使用磁阻效应元件的磁存储器。磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。存储层的每个铁磁层由Ni-Fe-Co三元合金形成，该Ni-Fe-Co三元合金具有选自由Co90直线（原子％）Fe 10（原子％）-Fe 30（at％）包围的组成区域之一的组成 at％）Ni80（at％），直线Fe80（at％）Ni20（at％）-Fe30（at％）Ni70（at％）和直线Fe80（at％）Ni20（at％） - Co65（at％）Ni35（at％），由Fe80（原子％）Ni20（原子％）的直线包围的组成区域，Co65（原子％）Ni35（原子％），Co90的直线％）Fe10（at％）-Fe70（at％）Ni30（at％）和Co90（at％）Fe10（at％）-Fe30（at％）Ni70（at％）的直线。存储层和隧道势垒层之间的界面上的最大表面粗糙度以及磁性膜和隧道势垒层之间的界面的最大表面粗糙度为0.4nm以下。

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