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41. 发明授权

US06350681B1 Method of forming dual damascene structure 有权
标题翻译：形成双镶嵌结构的方法
公开(公告)号：US06350681B1
公开(公告)日：2002-02-26
申请号：US09780549
申请日：2001-02-09
申请人： Anseime Chen , Chingfu Lin , Yi-Fang Cheng , I-Hsiung Huang
发明人： Anseime Chen , Chingfu Lin , Yi-Fang Cheng , I-Hsiung Huang
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a multiple layer damascene structure. A substrate comprising of a multi-layered stack that includes, from bottom to top, a metallic layer, a first etching stop layer, a first dielectric layer, a second etching stop layer and a second dielectric layer is provided. A photoresist layer having large area openings and vias pattern is formed over the substrate. Large area openings and vias that expose a portion of the first etching stop layer are formed in the substrate. A barrier layer that fills all the large area openings and vias is formed over the substrate. Chemical-mechanical polishing is conducted to remove a portion of the barrier layer and expose the second dielectric layer. A second photoresist having a trench pattern thereon is formed over the substrate. Using the second photoresist as a mask, etching is conducted so that the second etching stop layer around the vias is exposed. Lastly, the barrier layer is removed.
摘要翻译：一种形成多层镶嵌结构的方法。提供一种包括多层叠层的衬底，其包括从底部到顶部的金属层，第一蚀刻停止层，第一介电层，第二蚀刻停止层和第二介电层。在衬底上形成具有大面积开口和通孔图案的光致抗蚀剂层。在基板上形成露出一部分第一蚀刻停止层的大面积开口和通孔。填充所有大面积开口和通孔的阻挡层形成在衬底上。进行化学机械抛光以去除阻挡层的一部分并暴露第二介电层。其上具有沟槽图案的第二光致抗蚀剂形成在衬底上。使用第二光致抗蚀剂作为掩模，进行蚀刻，使得通孔周围的第二蚀刻停止层露出。最后，去除阻挡层。

42. 发明申请

US20130252175A1 Litho Cluster and Modulization to Enhance Productivity 有权
标题翻译： Litho集群和模块化以提高生产力
公开(公告)号：US20130252175A1
公开(公告)日：2013-09-26
申请号：US13429921
申请日：2012-03-26
申请人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
发明人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
IPC分类号： G03F7/20 , H01L21/00
CPC分类号： G03F7/30 , G03F7/16 , G03F7/70991 , H01L21/67225 , H01L21/67745
摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.
摘要翻译：本公开涉及一种用于半导体工件加工的平版印刷工具装置。光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

43. 发明授权

US08338960B2 Method of manufacturing photomask and method of repairing optical proximity correction 有权
公开(公告)号：US08338960B2
公开(公告)日：2012-12-25
申请号：US13437575
申请日：2012-04-02
申请人： Ling-Chieh Lin , Chien-Fu Lee , I-Hsiung Huang
发明人： Ling-Chieh Lin , Chien-Fu Lee , I-Hsiung Huang
IPC分类号： H01L23/522
CPC分类号： G03F1/36
摘要： A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

44. 发明授权

US08338262B2 Dual wavelength exposure method and system for semiconductor device manufacturing 有权
标题翻译：双波长曝光方法和半导体器件制造系统
公开(公告)号：US08338262B2
公开(公告)日：2012-12-25
申请号：US12478426
申请日：2009-06-04
申请人： Heng-Jen Lee , Jui-Chun Peng , I-Hsiung Huang
发明人： Heng-Jen Lee , Jui-Chun Peng , I-Hsiung Huang
IPC分类号： H01L21/336
CPC分类号： G03F7/203 , G03F7/7045 , G03F7/70458 , G03F7/70466
摘要： A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.
摘要翻译：双波长曝光系统提供了使用两个曝光操作来形成在晶片上形成的晶片上的抗蚀剂层，一个包括具有第一波长的第一辐射，另一个包括包括第二波长的第二辐射。可以使用不同或相同的光刻工具来产生第一和第二辐射。对于形成在半导体器件上的每个裸片，使用第一曝光操作曝光图案的关键部分，该第一曝光操作使用第一波长的第一辐射，并且使用第二曝光操作曝光图案的非关键部分第二波长的辐射。抗蚀剂材料被选择为对具有第一波长的第一辐射和具有第二波长的第二辐射都敏感。

45. 发明授权

US06492097B1 Process for increasing a line width window in a semiconductor process 有权
标题翻译：在半导体工艺中增加线宽窗口的工艺
公开(公告)号：US06492097B1
公开(公告)日：2002-12-10
申请号：US09666755
申请日：2000-09-21
申请人： Anseime Chen , Chieh-Ming Wang , I-Hsiung Huang
发明人： Anseime Chen , Chieh-Ming Wang , I-Hsiung Huang
IPC分类号： G03C500
CPC分类号： G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70441
摘要： A process for increasing the line width window in a semiconductor process, which is suitable to be used to increase the line width widow at the time of the exposure of an iso-line pattern under 0.13 &mgr;m. This process includes: first forming a positive photoresist layer on the base, then using the first photomask to conduct the first exposure step on the positive photoresist layer. The first photomask is designed to have at least one main line that is opaque. On each of the two sides of the main line, there is a scattering bar. The width of the two scattering bars is greater than ⅓ of the wavelength of the light source that is used, and less than the width of the main line. The second photomask is used to conduct the second exposure step on the positive photoresist layer. The second photomask is designed to have at least two iso-lines that are pervious to light, and each of the two iso-lines is located at one of the two positions corresponding to the two scattering bars of the first photomask design. The width of each iso-line is greater than that of the corresponding scattering bar and the distance from each edge of the iso-line to each edge of the corresponding scattering bar is greater than about 60 nm.
摘要翻译：一种用于增加半导体工艺中的线宽窗口的方法，其适用于在0.13μm下等距线图案的曝光时增加线宽寡居。该方法包括：首先在基底上形成正性光致抗蚀剂层，然后使用第一光掩模在正性光致抗蚀剂层上进行第一曝光步骤。第一个光掩模被设计为具有至少一条不透明的主线。在主线两侧各有一个散射条。两个散射棒的宽度大于使用的光源的波长的1/3，并且小于主线的宽度。第二光掩模用于在正性光致抗蚀剂层上进行第二曝光步骤。第二光掩模被设计为具有至少两个能够透光的等分线，并且两个等分线中的每一个位于对应于第一光掩模设计的两个散射条的两个位置中的一个位置。每个等轴线的宽度大于对应散射棒的宽度，并且等轴线的每个边缘到相应散射条的每个边缘的距离大于约60nm。

46. 发明授权

US6080527A Optical proximity correction of L and T shaped patterns on negative photoresist 有权
标题翻译：负光致抗蚀剂上L和T形图案的光学邻近校正
公开(公告)号：US6080527A
公开(公告)日：2000-06-27
申请号：US442861
申请日：1999-11-18
申请人： I-Hsiung Huang , Anseime Chen , Jiunn-Ren Huang
发明人： I-Hsiung Huang , Anseime Chen , Jiunn-Ren Huang
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/36
摘要： An optical proximity correction method for rectifying pattern on negative photoresist. Line pattern of integrated circuit is divided into L-shape regions or T-shaped regions. The L-shaped or T-shaped regions are further dissected into rectangular patches. Area of each rectangular patch is suitably reduced and reproduced onto a photomask. The photomask is used to form a corrected photoresist pattern.
摘要翻译：一种用于在负光致抗蚀剂上整流图案的光学邻近校正方法。集成电路的线路图案分为L形区域或T形区域。 L形或T形区域进一步分解成矩形斑块。每个矩形贴片的面积被适当地减小并再现到光掩模上。光掩模用于形成校正的光致抗蚀剂图案。

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