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41. 发明授权

US06632746B2 Etching method, semiconductor and fabricating method for the same 有权
标题翻译：蚀刻方法，半导体及其制造方法相同
公开(公告)号：US06632746B2
公开(公告)日：2003-10-14
申请号：US09837556
申请日：2001-04-19
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：由SiC 表示的有机/无机混合膜。使用含有氟，碳和氮的蚀刻气体等离子体蚀刻（x> 0，y> = 0，z> 0）。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含有氟和碳的蚀刻气体进行等离子体蚀刻

42. 发明授权

US06518191B2 Method for etching organic film, method for fabricating semiconductor device and pattern formation method 有权
标题翻译：蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法
公开(公告)号：US06518191B2
公开(公告)日：2003-02-11
申请号：US09798913
申请日：2001-03-06
申请人： Hideo Nakagawa
发明人： Hideo Nakagawa
IPC分类号： H01L21302
CPC分类号： H01L21/7681 , H01L21/31138 , H01L21/31144 , H01L21/76804
摘要： Etching is conducted on an organic film to be used as an interlayer insulating film by using plasma generated from an etching gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen, such as methylamine.
摘要翻译：通过使用由含有碳，氢和氮的化合物如甲胺作为主要成分的蚀刻气体产生的等离子体，在有机膜上进行蚀刻，以用作层间绝缘膜。

43. 发明授权

US06030667A Apparatus and method for applying RF power apparatus and method for generating plasma and apparatus and method for processing with plasma 失效
标题翻译：用于施加RF电力装置的装置和方法以及用于产生等离子体的方法以及用等离子体处理的装置和方法
公开(公告)号：US06030667A
公开(公告)日：2000-02-29
申请号：US996705
申请日：1997-12-24
申请人： Hideo Nakagawa , Shigenori Hayashi , Ichiro Nakayama , Tomohiro Okumura
发明人： Hideo Nakagawa , Shigenori Hayashi , Ichiro Nakayama , Tomohiro Okumura
IPC分类号： H01J37/32 , H03H7/38 , H05H1/46 , H05H1/24 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32706 , H03H7/38 , H05H1/46
摘要： On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple spiral coil composed of four spiral coil elements connected in parallel via an impedance matcher. The length of each of the coil elements corresponds to 1/4 of the wavelength of the RF power supplied from the first RF power source. A second RF power source applies an RF bias voltage to the lower electrode.
摘要翻译：在室的底部，设置有用于通过绝缘体介入来支撑待处理物体的下电极。第一RF电源将RF功率施加到由经由阻抗匹配器并联连接的四个螺旋线圈元件组成的多个螺旋线圈。每个线圈元件的长度对应于从第一RF电源提供的RF功率的波长的+ E，fra 1/4 + EE。第二RF电源向下电极施加RF偏置电压。

44. 发明授权

US5607183A Air bag provided with reinforcing belts 失效
标题翻译：气袋配有加强带
公开(公告)号：US5607183A
公开(公告)日：1997-03-04
申请号：US573867
申请日：1995-12-18
申请人： Kunio Nishimura , Hideo Nakagawa , Shiro Kumakawa
发明人： Kunio Nishimura , Hideo Nakagawa , Shiro Kumakawa
IPC分类号： B60R21/16 , B60R21/233 , B60R21/20
CPC分类号： B60R21/233 , B60R21/2338 , B60R2021/23382
摘要： An air bag having reinforcing belts and exhibiting a high burst strength and excellent safety, comprises a circular top cloth, a circular bottom cloth seam-joined to the top cloth and having an inflator-joining circular hole located in the center portion thereof, top and bottom reinforcing cloths seam-joined to center portions of the top and bottom cloths and a plurality of reinforcing belts located on inside faces of the top and bottom cloths, in which the air bag and end portion of each reinforcing belt is connected to the top reinforcing cloth or a top belt catcher seam-joined to the top cloth, the opposite end portion of the reinforcing belt is connected to the bottom reinforcing cloth or a bottom belt catcher seam-joined to the bottom cloth and each of the top and bottom cloths is seam-joined to a corresponding reinforcing cloth and optionally a corresponding belt catcher by a plurality of concentrically closed seam lines which satisfies a particular relationship.
摘要翻译：具有加强带并且具有高爆裂强度和优异安全性的气囊包括圆顶布，与底布接合的圆形底布，并且具有位于其中心部分的充气机接合圆孔，底部加强布接合到顶部和底部布的中心部分，以及位于顶部和底部布的内表面上的多个加强带，其中每个加强带的气囊和端部连接到顶部加强件布或顶层接缝接合到顶布上，加强带的相对端部连接到底部加强布或与底布接合的底部带抓地器，并且每个顶部和底部布是通过满足特定关系的多个同心封闭的接缝线缝合连接到相应的增强布和任选的相应的带束捕获器。

45. 发明授权

US5474836A Polyester filament woven fabric for air bags 失效
标题翻译：聚酯长丝织物用于气囊
公开(公告)号：US5474836A
公开(公告)日：1995-12-12
申请号：US177444
申请日：1994-01-05
申请人： Kunio Nishimura , Shiro Kumakawa , Hideo Nakagawa
发明人： Kunio Nishimura , Shiro Kumakawa , Hideo Nakagawa
IPC分类号： B60R21/16 , B60R21/235 , D03D1/02 , B32B5/16 , D03D3/00
CPC分类号： B60R21/235 , D01F6/62 , D03D1/02 , Y10T442/3976
摘要： A non-coated and uncalendered polyester filament woven fabric useful for an air bag, having a low air permeability even after a dry or wet heat aging, includes a plurality of polyester multifilament warp and weft yarns having (1) a maximum thermal stress of 0.8 g/denier or less determined between room temperature and the melting point of the yarns, at a heating rate of 150.degree. C./min and at a fixed length of the yarn under an initial load of 0.08 g/denier, (2) a maximum thermal shrinkage of 25% or less determined between room temperature and the melting temperature of the yarn at a heating rate of 150.degree. C./min under an initial load of 0.08 g/denier without restricting the shrinkage of the yarns, (3) a limiting viscosity number of 0.80 to 0.95 dl/g determined in a concentration of 1.2 g/100 ml in o-chlorophenol at 25.degree. C., and (4) a content of terminal carboxyl groups of 5 to 35 equivalent per ton.
摘要翻译：包括多个聚酯复丝经纱和纬纱，其具有（1）最大热应力为0.8的用于气囊的非涂层和未经缩短的聚酯长丝编织物，即使在干燥或湿热老化之后也具有低的透气性在180℃/分钟的加热速率和0.08g /旦尼尔的初始负载下的纱线的固定长度处，室温和纱线的熔点之间的g /旦或更小，（2）a （3）在不影响纱线收缩的情况下，以0.08g /旦尼尔的初始负荷，以150℃/分钟的升温速度在室温和纱线的熔融温度之间确定最大热收缩率为25％在25℃下在邻氯苯酚中以1.2g / 100ml的浓度测定极限粘度为0.80〜0.95dl / g，（4）末端羧基含量为5〜35当量/吨。

46. 发明申请

US20130099573A1 POWER SUPPLY DEVICE AND CONTROL METHOD FOR POWER SUPPLY 有权
标题翻译：电源设备和电源控制方法
公开(公告)号：US20130099573A1
公开(公告)日：2013-04-25
申请号：US13652688
申请日：2012-10-16
申请人： Mikio Nakajima , Tetsuya Yano , Hideo Nakagawa , Yu Yoshioka
发明人： Mikio Nakajima , Tetsuya Yano , Hideo Nakagawa , Yu Yoshioka
IPC分类号： H02J9/00
CPC分类号： H02J1/108 , H02J1/14 , H02J7/345 , Y10T307/615
摘要： A power supply device includes: a main power supply configured to feed power to a load with constant-voltage output using an external power supply; an auxiliary power supply configured to feed power to the load using an internal power storage unit; a constant-current/constant-voltage switching power supply configured to feed a part of current flowing through the load by which part the current exceeds an upper limit value of output current of the main power supply instructed by a current upper-limit instruction unit, with the constant-current output from the auxiliary power supply; and an output switching unit switching the constant-current/constant-voltage switching power supply from the constant-current output to the constant-voltage output when a power cut monitoring unit determines stop of power supply from the external power supply.
摘要翻译：电源装置包括：主电源，其被配置为使用外部电源向具有恒定电压输出的负载供电; 辅助电源，被配置为使用内部蓄电单元向负载供电; 恒流/恒压开关电源，被配置为馈送流过所述负载的电流的一部分，所述电流的一部分超过由所述当前上限指令单元指示的所述主电源的输出电流的上限值，辅助电源的恒流输出; 以及输出切换单元，当断电监视单元确定从外部电源的电源停止时，将恒定电流/恒定电压开关电源从恒定电流输出切换到恒定电压输出。

47. 发明授权

US07906030B2 Dry etching method, fine structure formation method, mold and mold fabrication method 有权
标题翻译：干蚀刻法，精细结构形成法，模具和模具制造方法
公开(公告)号：US07906030B2
公开(公告)日：2011-03-15
申请号：US11659107
申请日：2006-05-23
申请人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
发明人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
IPC分类号： C25F3/00 , C03C25/68 , H01L21/461
CPC分类号： C04B41/91 , C04B41/009 , C04B41/5346 , G02B2006/12166 , Y10T428/24479 , C04B41/0054 , C04B35/56
摘要： A WC substrate 7 is etched by using plasma 50 generated from a mixed gas of a gas including a halogen atom and a gas including a nitrogen atom.
摘要翻译：通过使用由包括卤素原子的气体和包括氮原子的气体的混合气体产生的等离子体50来蚀刻WC衬底7。

48. 发明授权

US07732339B2 Etching method, semiconductor and fabricating method for the same 有权
标题翻译：蚀刻方法，半导体及其制造方法相同
公开(公告)号：US07732339B2
公开(公告)日：2010-06-08
申请号：US11131180
申请日：2005-05-18
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCx- HyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：用含有氟，碳和氮的蚀刻气体等离子体蚀刻由SiCx-HyOz（x> 0，y≥0，z> 0）表示的有机/无机杂化膜。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

49. 发明申请

US20090047627A1 Partial denture 有权
标题翻译：部分义齿
公开(公告)号：US20090047627A1
公开(公告)日：2009-02-19
申请号：US11921679
申请日：2005-06-09
申请人： Hideo Nakagawa
发明人： Hideo Nakagawa
IPC分类号： A61C13/225
CPC分类号： A61C13/267 , A61C13/01
摘要： A partial denture of a novel type excellent in feelings in use and easy to manufacture is provided. The partial denture has an artificial tooth 1, a denture base 11 holding the artificial tooth, and a clasp 25 fixed to the denture base, wherein the clasp includes a back-side arm 4b and a front-side arm 4a and does not include a rest, the back-side arm extending in a rearward bulging convex on a back side of a dentition-extended range of the denture base 11, the front-side arm extending in a forward bulging convex toward a front side of the dentition-extended range of the denture base to make a pair with the back-side arm, and wherein the back-side arm and the front-side arm extend within a height range S0 ranging from an extended plane of a top surface 1a of a crown of the artificial tooth toward the denture base side.
摘要翻译：提供了一种在使用上感觉良好且易于制造的新颖型的部分假牙。局部义齿具有人造牙齿1，保持人造牙齿的假牙基座11和固定在义齿基座上的扣环25，其中，所述扣具包括后侧臂4b和前侧臂4a，并且不包括休息，后侧臂在义齿基座11的牙列延伸范围的背侧上向后凸起延伸，前侧臂朝向牙列延伸范围的前侧朝向凸出的凸起延伸所述假牙基座与所述背侧臂成对配置，并且其中所述后侧臂和所述前侧臂在从人造牙冠顶面1a的延伸平面延伸的高度范围S0的范围内延伸齿向义齿基部侧。

50. 发明申请

US20080248328A1 Process for Preparing a Zeolite-Containing Film 审中-公开
标题翻译：制备含沸石膜的方法
公开(公告)号：US20080248328A1
公开(公告)日：2008-10-09
申请号：US12060480
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa
IPC分类号： B32B9/00 , B05D3/02 , B05D5/12
CPC分类号： H01L21/31695 , C01B33/141 , C01B33/145 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337
摘要： The invention provides a preparation process of a zeolite-containing film which can raise a zeolite component therein, control the physical properties of the surface, and provide a highly smooth film. The process for preparing a zeolite-containing film has a step of forming a precursor film containing an amorphous silicon oxide portion and a zeolite-like recurring portion by using a material having an amorphous silicon oxide portion and a material having a zeolite-like recurring portion; and a dry gel conversion step of heating the precursor film in the presence of water vapor in order to grow the zeolite-like recurring portion. In this process, the material having an amorphous silicon oxide portion and/or the material having a zeolite-like recurring portion contain(s) a silicon atom bonded to the carbon atom of an organic group containing at least one carbon group.
摘要翻译：本发明提供了一种含沸石的膜的制备方法，其可以在其中提高沸石组分，控制表面的物理性能，并提供高度光滑的膜。制备含沸石的膜的方法具有通过使用具有非晶氧化硅部分的材料和具有沸石状重复部分的材料形成含有非晶氧化硅部分和沸石状重复部分的前体膜的步骤 ; 以及干燥凝胶转化步骤，在水蒸气存在下加热前体膜，以生长沸石状重复部分。在该方法中，具有无定形氧化硅部分的材料和/或具有沸石状重复部分的材料含有与含有至少一个碳原子的有机基团的碳原子键合的硅原子。

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