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41. 发明授权

US06449521B1 Decontamination of a plasma reactor using a plasma after a chamber clean 有权
标题翻译：在室清洁后使用等离子体对等离子体反应器进行去污
公开(公告)号：US06449521B1
公开(公告)日：2002-09-10
申请号：US09156698
申请日：1998-09-18
申请人： Anand Gupta
发明人： Anand Gupta
IPC分类号： G06F1900
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10T29/41 , Y10T29/413 , Y10T29/417
摘要： A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the reaction of TEOS and oxygen. According to the method of the present invention, plasma of an inert gas is maintained in plasma reactor following chamber clean to remove sorbable contaminants such as fluorine. The plasma clean is typically followed by seasoning of the reactor to block or retard remaining contaminants. According to one embodiment of the invention, the combination of chamber clean, plasma clean, and season film is conducted before PECVD oxide layer is deposited on wafer positioned in the plasma reactor.
摘要翻译：用于化学气相沉积工艺中用于还原等离子体反应器中的氟和其它可吸附污染物的方法和装置，例如通过TEOS和氧的反应沉积氧化硅层。根据本发明的方法，惰性气体的等离子体在室清洁之后保持在等离子体反应器中以除去可吸附的污染物如氟。等离子体清洁通常是通过反应器的调味来阻止或延缓剩余的污染物。根据本发明的一个实施例，在PECVD氧化物层沉积在等离子体反应器中的晶片上之前，进行室清洁，等离子体清洁和季节膜的组合。

42. 发明授权

US06291028B1 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 有权
标题翻译：用于改善界面处等离子体增强CVD膜的膜质量的方法和装置
公开(公告)号：US06291028B1
公开(公告)日：2001-09-18
申请号：US09608786
申请日：2000-06-30
申请人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C16505
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.
摘要翻译：一种用于在界面处沉积具有改进的膜质量的层的方法和装置。该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。在优选的实施方案中，反应气体是四乙氧基硅烷。在另一优选实施方案中，工艺气体还包括氟。

43. 发明授权

US06289843B1 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface 有权
公开(公告)号：US06289843B1
公开(公告)日：2001-09-18
申请号：US09643320
申请日：2000-08-21
申请人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Virendra V. S. Rana , Amrita Verma , Mohan K. Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , C23C16/401 , H01L21/02131 , H01L21/02274 , H01L21/31629
摘要： A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

44. 发明授权

US6029369A Methods for spin drying a workpiece 有权
标题翻译：旋转干燥工件的方法
公开(公告)号：US6029369A
公开(公告)日：2000-02-29
申请号：US361672
申请日：1999-07-26
申请人： Jose R. Gonzalez-Martin , Arthur Hamer , Anand Gupta
发明人： Jose R. Gonzalez-Martin , Arthur Hamer , Anand Gupta
IPC分类号： H01L21/00 , H01L21/687 , F26B5/08
CPC分类号： H01L21/68728 , H01L21/67034 , H01L21/68785 , H01L21/68792
摘要： A spin dryer assembly for drying workpieces such as semiconductor wafers includes a workpiece platform for receiving a workpiece to be dried. A motor is coupled to and spins the platform to effect removal of water and particulates from the workpiece. Gripping fingers are pivotally mounted around the platform and securely grip the workpiece during drying. Spring loaded plungers maintain the gripping fingers in a secured position during drying. A cam ring is vertically movable into and out of contact with the gripping fingers to bias the gripping portions of the fingers outwardly to a release position after drying.
摘要翻译：用于干燥诸如半导体晶片的工件的旋转干燥器组件包括用于接收待干燥的工件的工件平台。马达与平台联接并旋转以实现工件的水和微粒的去除。夹紧指状物可枢转地安装在平台周围并在干燥期间牢固地夹紧工件。弹簧加载的柱塞在干燥过程中将夹紧的手指保持在一个固定的位置。凸轮环可以垂直移动进入和脱离与夹紧指状物的接触，以将干燥后的指状物的把持部分向外偏压到释放位置。

45. 发明授权

US6020035A Film to tie up loose fluorine in the chamber after a clean process 失效
标题翻译：在清洁过程之后，电影将室内的松散的氟结合起来
公开(公告)号：US6020035A
公开(公告)日：2000-02-01
申请号：US740381
申请日：1996-10-29
申请人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
发明人： Anand Gupta , Mohan Bhan , Sudhakar Subrahmanyam
IPC分类号： C23C14/56 , C23C16/44 , C23C16/50 , C23C16/509 , C23C16/52 , H01L21/316 , B05D3/06 , B08B5/00 , H05H1/02
CPC分类号： C23C14/564 , C23C16/4404 , C23C16/5096 , C23C16/52 , H01J37/32477 , H01J37/32862 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： An improved method of reducing the level of contaminants (e.g., fluorine) absorbed in films deposited within a substrate processing chamber. A seasoning layer is deposited within the substrate processing chamber to cover contaminants that may be absorbed within walls or insulation areas of the chamber interior. The deposited seasoning layer is more stable than prior art seasoning layers and is thus less likely to release the absorbed contaminants into the substrate processing chamber during the subsequent deposition of films. In a preferred embodiment, the seasoning layer is formed from a mixed frequency PECVD process in which the low frequency RF signal is supplied at a high power level to increase ion bombardment and enhance film stability. The increased bombardment favors the formation of stable SiF bonds between silicon and fluorine atoms in the lattice structure of the film rather than unstable SiF.sub.2 or other bonds. When residual fluorine atoms (e.g., fluorine atoms absorbed within the chamber walls) are incorporated into the deposited seasoning layer, fewer loosely bonded fluorine atoms are incorporated into the layer than in prior art silicon oxide seasoning layers. Fewer loosely bonded fluorine atoms in the seasoning film results in fewer contaminants being incorporated into films deposited over substrates in subsequent processing steps.
摘要翻译：一种降低在衬底处理室内沉积的膜中吸收的污染物（例如氟）的水平的改进方法。在基材处理室内沉积调味料层以覆盖可能被吸收在室内部的壁或绝缘区域内的污染物。沉积的调味剂层比现有技术的调味料层更稳定，因此在随后的膜沉积期间不太可能将吸收的污染物释放到基材处理室中。在优选实施例中，调味层由混合频率PECVD工艺形成，其中以高功率水平提供低频RF信号以增加离子轰击并提高膜的稳定性。增加的轰击有利于在膜的晶格结构中硅和氟原子之间形成稳定的SiF键，而不是不稳定的SiF 2或其它键。当剩余的氟原子（例如在室壁内吸收的氟原子）被并入沉积的调味层中时，与现有技术的氧化硅调味层相比，较少的松散键合的氟原子被掺入到该层中。在调味膜中较少松散粘合的氟原子导致在随后的加工步骤中将沉积在基材上的薄膜中的污染物掺入较少。

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