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41. 发明申请

US20060027847A1 Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same 有权
公开(公告)号：US20060027847A1
公开(公告)日：2006-02-09
申请号：US11193415
申请日：2005-08-01
申请人： June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
发明人： June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/65
摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected from the group consisting of Ir and Ru. A ferroelectric layer is disposed on the first electrode, wherein the ferroelectric layer comprises a ferroelectric material containing the second element. A second electrode is disposed on the ferroelectric layer. The ferroelectric capacitor can be provided as part of a memory cell of a ferroelectric memory.

42. 发明授权

US08124968B2 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08124968B2
公开(公告)日：2012-02-28
申请号：US12366151
申请日：2009-02-05
申请人： June-mo Koo , Suk-pil Kim , Tae-Eung Yoon
发明人： June-mo Koo , Suk-pil Kim , Tae-Eung Yoon
IPC分类号： H01L29/08
CPC分类号： H01L27/1021 , H01L27/101 , H01L27/2409 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146
摘要： Provided are a non-volatile memory device which can be extended in a stack structure and thus can be highly integrated, and a method of manufacturing the non-volatile memory device. The non-volatile memory device includes: at least one first electrode, at least one second electrode crossing the at least one first electrode, at least one data storing layer interposed between the at least one first electrode and the second electrode, at a region in which the at least one first electrode crosses the at least one second electrode and at least one metal silicide layer interposed between the at least one first electrode and the at least one second electrode, at the region in which the at least one first electrode crosses the at least one second electrode.
摘要翻译：提供了可以以堆叠结构进行扩展并因此可以高度集成的非易失性存储器件，以及制造非易失性存储器件的方法。所述非易失性存储器件包括：至少一个第一电极，至少一个第二电极，与所述至少一个第一电极交叉，至少一个数据存储层插入在所述至少一个第一电极和所述第二电极之间的区域中所述至少一个第一电极与所述至少一个第二电极交叉，并且所述至少一个金属硅化物层插入在所述至少一个第一电极和所述至少一个第二电极之间，所述至少一个第一电极在所述至少一个第一电极与至少一个第二电极。

43. 发明授权

US07745233B2 Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same 有权
标题翻译：铁电电容器和铁电存储器与Ir-Ru合金电极及其制造方法相同
公开(公告)号：US07745233B2
公开(公告)日：2010-06-29
申请号：US12289494
申请日：2008-10-29
申请人： Sang-min Shin , Suk-pil Kim , Young-soo Park , Jung-hyun Lee , June-mo Koo
发明人： Sang-min Shin , Suk-pil Kim , Young-soo Park , Jung-hyun Lee , June-mo Koo
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L28/55 , H01L28/65 , Y10T29/417
摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.
摘要翻译：铁电电容器包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。铁电存储器包括衬底和布置在衬底上的多个存储单元。每个存储单元包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。

44. 发明授权

US07598095B2 Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same 有权
标题翻译：铁电存储器和具有Ir合金电极或Ru合金电极的铁电电容器及其制造方法
公开(公告)号：US07598095B2
公开(公告)日：2009-10-06
申请号：US11193415
申请日：2005-08-01
申请人： June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
发明人： June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
IPC分类号： H01L21/00 , H01L21/242 , H01L21/31 , H01L21/469
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/65
摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected from the group consisting of Ir and Ru. A ferroelectric layer is disposed on the first electrode, wherein the ferroelectric layer comprises a ferroelectric material containing the second element. A second electrode is disposed on the ferroelectric layer. The ferroelectric capacitor can be provided as part of a memory cell of a ferroelectric memory.
摘要翻译：铁电电容器包括第一电极，第一电极包括含有元素周期表第一元素和第二元素的合金，第一元素选自Ir和Ru。铁电层设置在第一电极上，其中铁电层包括含有第二元素的铁电材料。第二电极设置在铁电层上。铁电电容器可以作为铁电存储器的存储单元的一部分提供。

45. 发明授权

US07459736B2 Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same 有权
标题翻译：铁电电容器和铁电存储器与Ir-Ru合金电极及其制造方法相同
公开(公告)号：US07459736B2
公开(公告)日：2008-12-02
申请号：US10978795
申请日：2004-11-02
申请人： Sang-min Shin , Suk-pil Kim , Young-soo Park , Jung-hyun Lee , June-mo Koo
发明人： Sang-min Shin , Suk-pil Kim , Young-soo Park , Jung-hyun Lee , June-mo Koo
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L27/11502 , H01L28/55 , H01L28/65 , Y10T29/417
摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.
摘要翻译：铁电电容器包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。铁电存储器包括衬底和布置在衬底上的多个存储单元。每个存储单元包括包含Ir和Ru的合金的第一电极，设置在第一电极上的铁电层和设置在铁电层上的第二电极。

46. 发明申请

US20080038846A1 Method of fabricating a capacitor of a memory device 审中-公开
标题翻译：制造存储器件的电容器的方法
公开(公告)号：US20080038846A1
公开(公告)日：2008-02-14
申请号：US11878868
申请日：2007-07-27
申请人： Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
发明人： Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
IPC分类号： H01L21/8246
CPC分类号： H01L28/91 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.
摘要翻译：存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸沿着下电极和形成在铁电层上的上电极。

47. 发明授权

US07250649B2 Capacitor of a memory device and fabrication method thereof 失效
标题翻译：存储器件的电容器及其制造方法
公开(公告)号：US07250649B2
公开(公告)日：2007-07-31
申请号：US11120184
申请日：2005-05-03
申请人： Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
发明人： Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
IPC分类号： H01L29/76
CPC分类号： H01L28/91 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.
摘要翻译：存储器件的电容器及其制造方法包括电耦合到晶体管结构的掺杂区域的下电极，下电极具有金属电极和金属氧化物电极，铁电层覆盖并横向延伸沿着下电极和形成在铁电层上的上电极。

48. 发明申请

US20070051999A1 Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same 失效
标题翻译：具有三维结构的铁电电容器，具有相同的非易失性存储器件及其制造方法
公开(公告)号：US20070051999A1
公开(公告)日：2007-03-08
申请号：US11515024
申请日：2006-09-05
申请人： Sang-min Shin , Young-soo Park , June-mo Koo , Byoung-jae Bae , I-hun Song , Suk-pil Kim
发明人： Sang-min Shin , Young-soo Park , June-mo Koo , Byoung-jae Bae , I-hun Song , Suk-pil Kim
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.
摘要翻译：提供具有三维结构的铁电电容器，具有其的非易失性存储器件及其制造方法。铁电电容器可以包括沟槽型下电极，形成在下电极周围的至少一层，形成在下电极和至少一层上的铁电层（PZT层）和形成在铁电层上的上电极。所述至少一个层可以是至少一个绝缘中间层，并且所述至少一个层也可以是至少一个扩散阻挡层。至少一层可以由除SiO 2之外的绝缘材料形成，或者可以具有不包括Pb的钙钛矿晶体结构。

49. 发明申请

US20050161726A1 Capacitor of a semiconductor device, memory device including the same and method of munufacturing the same 审中-公开
标题翻译：半导体器件的电容器，包括其的存储器件及其制造方法
公开(公告)号：US20050161726A1
公开(公告)日：2005-07-28
申请号：US11042111
申请日：2005-01-26
申请人： Sang-min Shin , June-mo Koo , Suk-pil Kim , Choong-rae Cho
发明人： Sang-min Shin , June-mo Koo , Suk-pil Kim , Choong-rae Cho
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L29/76
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/55
摘要： In a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor, the capacitor includes a lower electrode comprising a single layer of one selected from the group including a noble metal alloy and an oxide thereof, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film.
摘要翻译：在电容器中，包括该电容器的存储器件以及制造该电容器的方法中，该电容器包括一个下电极，该电极包括从包括贵金属合金及其氧化物的组中选出的单层的单层，形成在下电极和形成在电介质膜上的上电极。

50. 发明授权

US08120006B2 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08120006B2
公开(公告)日：2012-02-21
申请号：US12585582
申请日：2009-09-18
申请人： Suk-pil Kim , June-mo Koo , Tae-eung Yoon
发明人： Suk-pil Kim , June-mo Koo , Tae-eung Yoon
IPC分类号： H01L47/00 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/249 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146
摘要： Provided is a non-volatile memory device having a stacked structure that is easily highly integrated and a method of economically fabricating the non-volatile memory device. The non-volatile memory device may include at least one first electrode and at least one second electrode that cross each other. At least one data storage layer may be disposed on a section where the at least one first electrode and the at least one second electrode cross each other. The at least one first electrode may include a first conductive layer and a first semiconductor layer.
摘要翻译：提供了具有容易高度集成的堆叠结构的非易失性存储器件以及经济地制造非易失性存储器件的方法。非易失性存储器件可以包括至少一个第一电极和至少一个彼此交叉的第二电极。至少一个数据存储层可以设置在至少一个第一电极和至少一个第二电极彼此交叉的部分上。所述至少一个第一电极可以包括第一导电层和第一半导体层。

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